CN202662415U - Composite type voltage and current protection assembly - Google Patents
Composite type voltage and current protection assembly Download PDFInfo
- Publication number
- CN202662415U CN202662415U CN 201220290529 CN201220290529U CN202662415U CN 202662415 U CN202662415 U CN 202662415U CN 201220290529 CN201220290529 CN 201220290529 CN 201220290529 U CN201220290529 U CN 201220290529U CN 202662415 U CN202662415 U CN 202662415U
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- disc
- piezoresistive wafer
- protection assembly
- temperature coefficient
- electric current
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Abstract
The utility model discloses a composite type voltage and current protection assembly which comprises a positive temperature coefficient thermistor disc and a piezoresistor disc, wherein the positive temperature coefficient thermistor disc and the piezoresistor disc are located in an encapsulating layer; one side electrode of the positive temperature coefficient thermistor disc and one side electrode of the piezoresistor disc are connected together to form a common terminal which is led out via a lead; the other side electrode of the positive temperature coefficient thermistor disc is led out via a lead; the other side electrode of the piezoresistor disc is led out via a lead; insulating paint is coated to the edge of the positive temperature coefficient thermistor disc; and the volume ratio of the piezoresistor disc to the positive temperature coefficient thermistor disc is greater than 1.3. The product provided by the utility model not only can prevent power frequency overvoltage from damaging a circuit, but also has better actions of preventing lighting strokes and absorbing surge pulses of lighting strokes, and the product is more reliable and plays the effects of overcurrent and overvoltage protection.
Description
Technical field
The utility model relates to a kind of current/voltage protection device, particularly a kind of compound electric current and voltage protection assembly.
Background technology
Positive temperature coefficient (PTC) thermistor can be used for the electronic product power source loop and plays overcurrent protection; Piezo-resistance can be used for plaing in the electronic circuit effect of lightning protection overvoltage protection.These two kinds of protection components can play respectively the over-current over-voltage protection effect; when the electric power loop electric current that the PTC thermistor is installed surpasses the protection rated current; owing to the temperature rise of element resistance body surpasses Curie temperature element resistance value is sharply risen; thereby protection subsequent conditioning circuit; but; because the overcurrent protection of PTC thermistor needs the longer reaction time, when PTC thermistor resistance did not also in time raise, the subsequent conditioning circuit element may be damaged sometimes.On the other hand; piezo-resistance can be generated heat owing to absorbing energy after bearing power-frequency overvoltage or pulse surge; when the energy of piezo-resistance absorption is excessive; piezo-resistance may be blasted on fire; generally solve this problem by pressure sensitive voltage and the diameter that improves piezo-resistance now; but so reduced to a certain extent the protection effect that varistor absorbs surge voltage, not only increased cost, nor can prevent the piezo-resistance accident on fire of blasting at all.
Existing document: " Lu Zhenya, the Combination application of varistor and PTCR thermistor, electronic component and material, 1997.12 " have openly reported some result of the tests of varistor and PTC themistor Combination application.Chinese patent 200720049371.4 discloses a kind of composite positive temperature coefficient thermistor, by PTC thermistor and piezo-resistance are packaged together, electric current and temperature when utilizing piezo-resistance overvoltage response improve the protection speed of PTC thermistor under any environment for use temperature, and protect conversely piezo-resistance; When utilizing PTC thermistor and piezo-resistance thermal coupling, the integrated protection effect of current/voltage improves the protection speed of PTC thermistor to greatest extent; But when the piezo-resistance of prior art manufacturing and thermistor combination product bore the lightning induction pulse, the side occured and punctures flashover in the sector-meeting of PTC thermistor owing to the pulse residual voltage is higher, so that the patented product can not protect lightening pulse.
On the other hand; PTC thermistor and piezo-resistance sub-assembly will play a protective role, and also must suitably choose the volume ratio of PTC thermistor and piezoresistive wafer, otherwise; sub-assembly not only can not shield when meeting power-frequency overvoltage, and itself also blast on fire can occur.
The utility model content
In order to overcome the above-mentioned deficiency of prior art, the purpose of this utility model is to provide a kind of compound electric current and voltage protection assembly, not only can realize the overcurrent overvoltage protection, also has advantages of anti-lightning strike.
The purpose of this utility model is achieved through the following technical solutions:
A kind of compound electric current and voltage protection assembly comprises semistor sheet and piezoresistive wafer; Described semistor sheet and piezoresistive wafer are positioned at encapsulated layer; Electrode of described semistor sheet and an electrode of piezoresistive wafer are joined together to form common port, and draw by first; An other electrode of described semistor sheet is drawn by second; The another side electrode of described piezoresistive wafer is drawn by the 3rd; The edge of described semistor sheet scribbles insulating varnish.
The volume ratio of described piezoresistive wafer and semistor sheet satisfies: V
MY/ V
PTC＞1.3, V wherein
MYBe the volume of piezoresistive wafer, V
PTCBe the thermosensitive resistor film volume.In this volume ratio scope; when overvoltage appears in protected electric power loop; the electric current that piezo-resistance is born the overvoltage generation causes itself heating; and conduct heat to thermosensitive resistor film by metal joint face (scolding tin or burn attached metal level); so that thermosensitive resistor film in time reaches Curie temperature and moves; thereby play the protection piezoresistive wafer, prevent its overheated detonation.If the volume ratio of thermosensitive resistor film and piezoresistive wafer is less than 1.3, when overvoltage appearred in protected electric power loop, thermistor is not action also, and piezo-resistance just may overheatedly be burnt detonation.
Described encapsulated layer is silicones, and the epoxy resin of selecting silicones to adopt than open source literature report is fire-retardant, heat-resisting and heat conductivility is better.
Described semistor sheet and piezoresistive wafer weld together by scolding tin.
Described semistor sheet and piezoresistive wafer also can bond together by conductive electrode material.
Compared with prior art, the utlity model has following advantage and beneficial effect: the utility model is coated insulating varnish by the edge at semistor, makes the utility model product have better protection thunderbolt, absorbs the effect of lightning surge pulse; By regulating suitable piezo-resistance and thermosensitive resistor film volume ratio and adopting silicones as encapsulated layer, so that the utility model product is more reliable, play the over-current over-voltage protection effect.
Description of drawings
Fig. 1 is the compound electric current and voltage protection assembly front schematic view of embodiment 1.
Fig. 2 is the generalized section that the compound electric current and voltage of embodiment 1 is protected semistor sheet in the assembly.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Such as Fig. 1 ~ shown in Figure 2, a kind of compound electric current and voltage protection of the present embodiment assembly comprises semistor sheet 1 and piezoresistive wafer 2; Described semistor sheet 1 and piezoresistive wafer 2 are positioned at silicones encapsulated layer 3.Electrode of described semistor sheet 1 and an electrode of piezoresistive wafer 2 are joined together to form common port by soldering-tin layer 4, and 6 draw by going between; An other electrode of described semistor sheet 17 is drawn by going between; The another side electrode of described piezoresistive wafer 28 is drawn by going between; The edge of described semistor sheet scribbles insulating varnish 5.The Curie temperature of semistor sheet is chosen as (95 ~ 125 ℃), and the room temperature resistance of semistor sheet is chosen as (10 ~ 300 ohm); The pressure sensitive voltage of piezoresistive wafer is chosen as (360 ~ 560V-be used for 220VAC power supply) or (180 ~ 270V-is used for the 110VAC power supply).
Described soldering-tin layer 4 is the one sides that solder(ing) paste are printed on piezoresistive wafer by silk screen printing; the printed patterns diameter is suitable with the thermosensitive resistor film diameter; after the printing thermosensitive resistor film being aimed at the solder(ing) paste printed patterns is attached on the piezoresistive wafer; through overbaking piezoresistive wafer is connected by scolding tin with thermosensitive resistor film; so far, made the electric current and voltage protection assembly chip of the present embodiment.At assembly chip relevant position welding lead; the assembly chip is fixed on the technique paper tape by lead-in wire, and the assembly chip surface insulation paint immersion coating behind the welding lead is after the curing; the recycle silicon resin is namely made the electric current and voltage protection assembly of the present embodiment with the assembly chip package after silicones solidifies.
Select diameter/thickness to be about 14.0/1.8mm, pressure sensitive voltage V
1mAThe voltage dependent resistor chip of=390V ± 10%; Select diameter/thickness to be about 8.5/2.5mm; 30 ~ 50 ohm of room temperature (25 ℃) resistances; Curie temperature is 120 ℃ PTC thermistor chip, makes electric current and voltage protection assembly sample by above-mentioned execution mode, and sample is carried out power-frequency overvoltage and pulse voltage test.Test result sees Table 1.
The power-frequency overvoltage method of testing: lead-in wire 7 and lead-in wire 8(that power-frequency overvoltage is applied to sample see Fig. 1) two ends, being the 450VAC AC power with voltage 8 is connected with being connected with lead-in wire 7, switch on and disconnect after 30 minutes, left standstill 30 minutes, switched on again 30 minutes ..., repeatedly test 10 times, after test finishes, sample appearance is unchanged, and the pressure sensitive voltage rate of change of thermistor chip room temperature resistance and voltage dependent resistor chip all is not more than ± and 10%, then sample test is qualified.
Pulse voltage method of testing: see Fig. 1 at sample lead-in wire 7 and lead-in wire 8() two ends apply pulse signal, clock is that (open circuit test is 8/20 μ s voltage wave to composite wave, and the voltage wave peak value is 6kV, and short circuit test is 1.2/50 μ s current wave, and the current wave peak value is 3kA.), every sample test 10 times, interval 60 seconds, after test finished, sample appearance was unchanged, and the pressure sensitive voltage rate of change of thermistor chip room temperature resistance and voltage dependent resistor chip all is not more than ± and 10%, then sample test is qualified.
In order to contrast, made two groups of comparative sample, contrast sample 1 adopts diameter/thickness to be about 10.0/1.8mm, pressure sensitive voltage V
1mAThe voltage dependent resistor chip of=390V ± 10%, the thermistor chip specification of employing is identical with above-mentioned sample (sample 1 ~ 5), calculates the volume ratio V of piezoresistive wafer and thermosensitive resistor film
MY/ V
PTC﹤ 1.3.The thermosensitive resistor film that contrast sample 2 adopts is identical with above-mentioned sample (sample 1 ~ 5) with piezoresistive wafer, reduces the step of insulation paint immersion coating when being sample making.The thermosensitive resistor film that contrast sample 3 adopts is identical with above-mentioned sample (sample 1 ~ 5) with piezoresistive wafer, just adopts powdered epoxy resin to seal but not adopts silicones to seal.
Each is organized the sample electric performance test and the results are shown in Table 1.
Table 1 sample power-frequency overvoltage and pulse voltage test result
The present embodiment is except following characteristics; outside semistor sheet and piezoresistive wafer bond together by conductive electrode material; all the other features are all same with embodiment 1: semistor sheet and piezoresistive wafer bond together by conductive electrode material; manufacture method: the one side that silver electrode paste is attached to piezoresistive wafer by silk screen printing; the printed patterns diameter is suitable with the thermosensitive resistor film diameter; after the printing thermosensitive resistor film aligning electrodes slurry printed patterns is attached on the piezoresistive wafer; through 150 ℃ of bakings; 550 ℃ of processing; piezoresistive wafer is connected by silver electrode with thermosensitive resistor film; so far; made the electric current and voltage protection assembly chip of the present embodiment, all the other making steps are identical with embodiment 1.Described electrode slurry can adopt silver electrode paste, also can adopt aluminum electrode slurry.
Above-described embodiment is the better execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within the protection range of the present utility model.
Claims (5)
1. a compound electric current and voltage protection assembly is characterized in that, comprises semistor sheet and piezoresistive wafer; Described semistor sheet and piezoresistive wafer are positioned at encapsulated layer; Electrode of described semistor sheet and an electrode of piezoresistive wafer are joined together to form common port, and draw by first; An other electrode of described semistor sheet is drawn by second; The another side electrode of described piezoresistive wafer is drawn by the 3rd; The edge of described semistor sheet scribbles insulating varnish.
2. compound electric current and voltage protection assembly according to claim 1 is characterized in that, the volume ratio of described piezoresistive wafer and semistor sheet satisfies: V
MY/ V
PTC＞1.3, V wherein
MYBe the volume of piezoresistive wafer, V
PTCVolume for thermosensitive resistor film.
3. compound electric current and voltage protection assembly according to claim 1 is characterized in that, described encapsulated layer is silicones.
4. compound electric current and voltage protection assembly according to claim 1 is characterized in that, described semistor sheet and piezoresistive wafer weld together by scolding tin.
5. compound electric current and voltage protection assembly according to claim 1 is characterized in that, described semistor sheet and piezoresistive wafer bond together by the conductive electrode slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220290529 CN202662415U (en) | 2012-06-19 | 2012-06-19 | Composite type voltage and current protection assembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220290529 CN202662415U (en) | 2012-06-19 | 2012-06-19 | Composite type voltage and current protection assembly |
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| CN202662415U true CN202662415U (en) | 2013-01-09 |
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| CN 201220290529 Expired - Fee Related CN202662415U (en) | 2012-06-19 | 2012-06-19 | Composite type voltage and current protection assembly |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311916A (en) * | 2013-06-28 | 2013-09-18 | 华南理工大学 | Thunder-prevention overvoltage protection device |
| CN103311914A (en) * | 2013-05-31 | 2013-09-18 | 深圳市劲阳电子有限公司 | Overvoltage production circuit of composite type piezoresistor |
| CN103337848A (en) * | 2013-06-28 | 2013-10-02 | 华南理工大学 | Anti-thunder overvoltage protection component |
| CN103346547A (en) * | 2013-06-28 | 2013-10-09 | 华南理工大学 | Anti-thunder overvoltage protection device |
| CN103426576A (en) * | 2013-07-25 | 2013-12-04 | 深圳市金瑞电子材料有限公司 | Macromolecular thermistor element with a plurality of zero-power resistance values |
| CN104332944A (en) * | 2014-10-27 | 2015-02-04 | 华南理工大学 | Pressure-sensitive and thermosensitive combined type overvoltage and over-current protecting device |
| CN104617571A (en) * | 2015-01-20 | 2015-05-13 | 长沙飞波通信技术有限公司 | Over-voltage over-current protector of electronic and electric equipment |
| CN107949778A (en) * | 2015-09-25 | 2018-04-20 | 株式会社村田制作所 | Electronic element assembly and its manufacture method with lead |
| CN110212509A (en) * | 2019-06-25 | 2019-09-06 | 厦门市三宝盈科电子有限公司 | A kind of compound protection device |
| CN111180151A (en) * | 2020-01-03 | 2020-05-19 | 北京科技大学 | Positive, negative and Delta temperature coefficient thermistor active switching method based on alternating frequency |
-
2012
- 2012-06-19 CN CN 201220290529 patent/CN202662415U/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311914A (en) * | 2013-05-31 | 2013-09-18 | 深圳市劲阳电子有限公司 | Overvoltage production circuit of composite type piezoresistor |
| CN103337848B (en) * | 2013-06-28 | 2016-01-06 | 华南理工大学 | A kind of anti-thunder overvoltage protection component |
| CN103337848A (en) * | 2013-06-28 | 2013-10-02 | 华南理工大学 | Anti-thunder overvoltage protection component |
| CN103346547A (en) * | 2013-06-28 | 2013-10-09 | 华南理工大学 | Anti-thunder overvoltage protection device |
| CN103311916A (en) * | 2013-06-28 | 2013-09-18 | 华南理工大学 | Thunder-prevention overvoltage protection device |
| CN103346547B (en) * | 2013-06-28 | 2016-03-30 | 华南理工大学 | A kind of Thunder-prevention overvoltage protection device |
| CN103426576A (en) * | 2013-07-25 | 2013-12-04 | 深圳市金瑞电子材料有限公司 | Macromolecular thermistor element with a plurality of zero-power resistance values |
| CN103426576B (en) * | 2013-07-25 | 2016-04-20 | 深圳市金瑞电子材料有限公司 | There is the macromolecular thermosensitive resistor element of multiple zero-power resistance |
| CN104332944A (en) * | 2014-10-27 | 2015-02-04 | 华南理工大学 | Pressure-sensitive and thermosensitive combined type overvoltage and over-current protecting device |
| CN104332944B (en) * | 2014-10-27 | 2017-10-20 | 华南理工大学 | A kind of pressure-sensitive temperature-sensitive compound type overvoltage over-current protection device |
| CN104617571A (en) * | 2015-01-20 | 2015-05-13 | 长沙飞波通信技术有限公司 | Over-voltage over-current protector of electronic and electric equipment |
| CN104617571B (en) * | 2015-01-20 | 2018-01-09 | 长沙飞波通信技术有限公司 | A kind of electronic electric equipment over-voltage and over-current protector |
| CN107949778A (en) * | 2015-09-25 | 2018-04-20 | 株式会社村田制作所 | Electronic element assembly and its manufacture method with lead |
| CN110212509A (en) * | 2019-06-25 | 2019-09-06 | 厦门市三宝盈科电子有限公司 | A kind of compound protection device |
| CN111180151A (en) * | 2020-01-03 | 2020-05-19 | 北京科技大学 | Positive, negative and Delta temperature coefficient thermistor active switching method based on alternating frequency |
| CN111180151B (en) * | 2020-01-03 | 2021-08-03 | 北京科技大学 | Positive, negative and Delta temperature coefficient thermistor active switching method based on alternating frequency |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130109 Termination date: 20170619 |
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| CF01 | Termination of patent right due to non-payment of annual fee |