CN202649991U - High-euphotic resistor-type touch screen - Google Patents
High-euphotic resistor-type touch screen Download PDFInfo
- Publication number
- CN202649991U CN202649991U CN 201220309850 CN201220309850U CN202649991U CN 202649991 U CN202649991 U CN 202649991U CN 201220309850 CN201220309850 CN 201220309850 CN 201220309850 U CN201220309850 U CN 201220309850U CN 202649991 U CN202649991 U CN 202649991U
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- Prior art keywords
- layer
- resistor
- film layer
- type touch
- euphotic
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Abstract
The utility model discloses a high-euphotic resistor-type touch screen. The high-euphotic resistor-type touch screen comprises a first transparent film base material, two surfaces of the first transparent film base material are respectively coated with a first resin film layer and a second resin film layer, the first resin film layer is provided with a silicon dioxide (SiO2) film layer, a first electroconductive film layer, a spacer layer, a second electroconductive film layer and a second film base material in sequence, a niobium-enriched niobium dioxide (Nb2Ox) layer is arranged between the first resin film layer and the SiO2 film layer, and 0<x<=5. When the high-euphotic resistor-type touch screen is not under outside contact pressure, an upper circuit and a lower circuit are supported by the spacer layer to form an open circuit. When the high-euphotic resistor-type touch screen is partially under the outside contact pressure, the first electroconductive film layer contacts with the second electroconductive film layer, and an access is formed. Compared with a touch screen with an electroconductive film of niobium-enriched niobium dioxide, the high-euphotic resistor-type touch screen is superior in full-light euphotic performance and lineation abrasion-resistance performance.
Description
Technical field
The utility model relates to a kind of resistor-type touch-screen, relates in particular to a kind of high printing opacity resistor-type touch-screen.
Background technology
Conventional resistor-type touch-screen is relative with the conduction face with transparent conducting glass (or transparent conductive film) by transparent conductive film, and middle interval with the garden cylindricality is supported.On transparent conductive film, exert pressure conducting film is contacted with hand or pen etc.Apply voltage at conducting film, judge the position of this contact point by control circuit.
This resistor-type touch-screen is because the simplification of manufacture, the appropriateness of price, and the advantage of contact point Accuracy of Judgement etc., compared with optical mode or ultrasonic mode, this touch-screen applications is extensive.
The transparent conductive film that uses at the resistor-type touch-screen is owing to rely on finger or pen etc. to press many times, generally will adhere to millions of times the test of getting ready, in addition, even require hundreds thousand of times record test, also will keep the high-durability of performance.
In addition, under the high humility of 150 ℃ hot test and 90%, the variation of resistance value is little, makes it satisfy the permanance of height at transparent conductive film that the resistor-type touch-screen uses.
The transparent and electrically conductive film that uses at resistive film mode touch-screen in addition is because superior compared with other visibility, so require the very high high transparent product of the transmitance of light.
As the manufacture of a transparent conductive film, use physics mode deposition indium tin oxide target at transparent film substrate.But on this transparent conductive film indium tin oxide target film to adhere to permanance very poor, surface resistance at high temperature varies widely.
The utility model content
The purpose of this utility model provides a kind of high printing opacity resistor-type touch-screen that helps to improve the properties of transparency of light.
The utility model adopts following technical scheme:
A kind of high printing opacity resistor-type touch-screen comprises: the first transparent membrane base material, on two surfaces of the first film base material, be coated with respectively the first resin thin film layer and the second resin thin film layer, and on the first resin thin film layer, be provided with successively SiO
2Thin layer, the first conductive membrane layer, wall, the second conductive membrane layer and the second film substrate are at the first resin thin film layer and SiO
2Be provided with rich niobium niobium oxide Nb between the thin layer
2O
xLayer, 0＜x≤5.
When the utility model was not subject to extraneous contact force, upper and lower circuit was supported by the wall interval, formed open circuit.When the utility model part is subject to extraneous contact force, the first conductive membrane layer contacts with the second conductive membrane layer, forms path.
Compared with prior art, the utlity model has following advantage:
After the two sides of the first transparent membrane base material has covered respectively the first resin thin film layer and the second resin thin film layer, help the increase of adhesion property.The touch-screen of the conductive film of the utility model relative rich niobium niobium oxide, its full light light transmission, the line anti-wear performance more superior.
2.At Nb
2O
xThe SiO that forms on the film
2The film that thin layer can form by the sputter mode, its thickness is at the thickness of 5nm to 200nm.Work as SiO
2When film thickness is lower than 5nm, then do not reach the wear-resisting purpose of anti-scratch.Will be so that the properties of transparency reduction when thickness surpasses 200nm.The increase of this layer film SiO
2Adhesion of thin film.Strengthened anti-stroke of intensity of stroke of film/blocked simultaneously the moisture that is penetrated into the transparent membrane base material, even under the environment of pyroprocessing, also so that the surface resistance of transparent conducting film changes reduces.
3.At SiO
2Increase one deck silicon rich silicon oxide SiO between thin layer and the first conductive membrane layer
yLayer helps to improve the properties of transparency of light.Silicon rich silicon oxide SiO
yLayer thickness at 0.5nm to 150nm, y value be than 0 large be the best during than 2 little any number.Its thickness is difficult to form successional film during less than 0.5 nm, surpasses 150nm, will cause the film light transparency to reduce.
Description of drawings
Fig. 1 is structural drawing of the present utility model.
Embodiment
With reference to Fig. 1, a kind of high printing opacity resistor-type touch-screen comprises: the first transparent membrane base material 1, on two surfaces of the first film base material 1, be coated with respectively the first resin thin film layer 2 and the second resin thin film layer 3, and on the first resin thin film layer 2, be provided with successively SiO
2Thin layer 5, the first conductive membrane layer 7, wall 8, the second conductive membrane layer 9 and the second film substrate 10 are at the first resin thin film layer 2 and SiO
2Be provided with rich niobium niobium oxide Nb between the thin layer 5
2O
xLayer 4,0＜x≤5.In the present embodiment, at SiO
2Be provided with silicon rich silicon oxide SiO between thin layer 5 and the first conductive membrane layer 7
y Layer 6,0＜y＜2; Silicon rich silicon oxide SiO
yThe thickness of layer 6 is 0.5nm ~ 150nm, and y value wherein is large less than 2 than 0; Rich niobium niobium oxide Nb
2O
xLayer 4 thickness is at 0.5nm ~ 150nm, and x be greatly and at numerical value arbitrarily below 5 than 0; The thickness of the first resin thin film layer 2 and the second resin thin film layer 3 is between 0.5nm ~ 150nm.Be difficult to when being lower than 0.5mm form successional film, so that prevent that the effect of moisture penetration is not proper; Surpass the reduction that 150nm can cause transparency.Described rich niobium niobium oxide Nb
2O
xWith silicon rich silicon oxide SiO
yAll be known materials, can obtain in the market purchase, for example: can ultrapure Materials Co., Ltd buy rich niobium niobium oxide Nb in Chengdu
2O
xWith silicon rich silicon oxide SiO
y
Claims (3)
1. one kind high printing opacity resistor-type touch-screen, comprise: the first transparent membrane base material (1), on two surfaces of the first film base material (1), be coated with respectively the first resin thin film layer (2) and the second resin thin film layer (3), on the first resin thin film layer (2), be provided with successively SiO
2Thin layer (5), the first conductive membrane layer (7), wall (8), the second conductive membrane layer (9) and the second film substrate (10) is characterized in that, at the first resin thin film layer (2) and SiO
2Be provided with rich niobium niobium oxide Nb between the thin layer (5)
2O
xLayer (4), 0＜x≤5.
2. high printing opacity resistor-type touch-screen according to claim 1 is characterized in that, at SiO
2Be provided with silicon rich silicon oxide SiO between thin layer (5) and the first conductive membrane layer (7)
yLayer (6), 0＜y＜2.
3. high printing opacity resistor-type touch-screen according to claim 1 is characterized in that, rich niobium niobium oxide Nb
2O
xThe thickness of layer (4) is 0.5nm ~ 150nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220309850 CN202649991U (en) | 2012-06-29 | 2012-06-29 | High-euphotic resistor-type touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220309850 CN202649991U (en) | 2012-06-29 | 2012-06-29 | High-euphotic resistor-type touch screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202649991U true CN202649991U (en) | 2013-01-02 |
Family
ID=47419066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220309850 Expired - Fee Related CN202649991U (en) | 2012-06-29 | 2012-06-29 | High-euphotic resistor-type touch screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202649991U (en) |
-
2012
- 2012-06-29 CN CN 201220309850 patent/CN202649991U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130102 Termination date: 20210629 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |