CN202585425U

CN202585425U - Double-channel GPP (Glass Passivation Pellet) passivation protection diode chip

Info

Publication number: CN202585425U
Application number: CN 201220259601
Authority: CN
Inventors: 汪良恩; 裘立强; 王毅; 游佩武
Original assignee: YANGZHOU JIELI SEMICONDUCTOR CO Ltd
Current assignee: YANGZHOU JIELI SEMICONDUCTOR CO Ltd
Priority date: 2012-06-04
Filing date: 2012-06-04
Publication date: 2012-12-05
Anticipated expiration: 2022-06-04

Abstract

The utility model discloses a double-channel GPP (Glass Passivation Pellet) passivation protection diode chip, relates to a structural improvement on a double-channel GPP passivation protection diode chip and provides a double-channel GPP passivation protection diode chip which can avoid causing subfissures and PN junction loss and save materials. The top surface of the chip is provided with a circle of groove; the groove is internally provided with a GPP passivation protection layer; and the outer side of the outer edge of the groove is also provided with a circle of cutting protection region. According to the utility model, cutting begins from the protection region outside the protection groove on the obverse side of a wafer, so that the stress loss for a PN junction of the chip in the process of cutting the bottom of the groove in the prior art is avoided, the bottom of the groove in the obverse side of the product provided by the utility model is filled with glass, the PN junction is better subjected to passivation protection, and the quality of the chip is better ensured. In addition, for the size of the cutting protection region, material waste is avoided while the requirement for reliable work of a mechanical cutting tool is met.

Description

Sycon GPP passivation protection diode chip for backlight unit

Technical field

The utility model relates to the improvement to sycon GPP passivation protection diode chip structure.

Background technology

Existing GPP (glassivation device Glassivation passivation parts) mesa diode chip, as shown in Figure 4, generally adopt from the division scheme of groove bottom land cutting scribing.The problem of two aspects below main the existence: the one, cutting blade is prone to cause the latent of silicon to split when groove 20 incised, this latent expansion gradually in material of splitting; The 2nd, because cut point 32 distance P N knot is very near, therefore cause the damage of PN junction easily, thereby cause latent the splitting of chip passivation layer easily and cause reduce or ultimate failure device lifetime.

The utility model content

The utility model provides a kind of and can avoid producing latent splitting and the PN junction damage to above problem, and the sycon GPP passivation protection diode chip for backlight unit of economical with materials.

The technical scheme of the utility model is: the end face of said chip offers a circle groove, is provided with GPP passivation protection layer in the said groove; Also be provided with a circle cutting protection zone in the outside of said groove outer rim.

The width of said cutting protection zone is the 5-35% of said recess width.

The utility model cutter cutting under the outside protection zone of the protection groove of front wafer surface; Avoided the stress damage that in the process of cutting channel bottom, the chip PN junction is caused in the prior art; Make the positive channel bottom of the utility model product filled up by glass fully; Can play better passivation protection effect to PN junction, make the chip quality have well and guarantee.In addition, to the size of cutting protection zone, when satisfying the mechanical cutting tool reliably working, avoided the waste of material.

Description of drawings

Fig. 1 is the structural representation of the utility model chip,

Fig. 2 is the vertical view of Fig. 1,

Fig. 3 is the structural representation of the utility model wafer,

Fig. 4 is the utility model prior art constructions sketch map;

1 is chip among the figure, the 2nd, and groove, the 21st, GPP passivation protection layer, the 22nd, table top, the 3rd, cutting protection zone, the 31st, line of cut, the 20th, groove, the 32nd, cut point.

Embodiment

The utility model is like Fig. 1, shown in 2, and the end face of said chip 1 offers a circle groove 2, and groove 2 inner chip end faces are table top 22, are provided with GPP passivation protection layer 21 in the said groove 2; Also be provided with a circle cutting protection zone 3 in the outside of said groove 2 outer rims.

The width of said cutting protection zone 3 is the 5-35% of said groove 2 width.

During processing the utility model; As shown in Figure 3; On wafer, process groove 2 one by one, the gap between the adjacent grooves 2 (being the distance between adjacent grooves 2 outer rims) very descended the line of cut 31 of cutter division wafer for the twice of cutting protection zone width, the center in this gap.After the division, make the chip 1 of the utility model one by one.

The groove of the chip 1 of the utility model (groove 2) is filled by glass (being GPP passivation protection layer) fully; Line of cut (on the silicon chip) from slot wedge during cutting cuts; Making does not need the cutting from groove 20 bottoms by better to the PN junction protection of glass in this product, littler to the PN junction damage.

Claims

1. sycon GPP passivation protection diode chip for backlight unit, the end face of said chip offer a circle groove, are provided with GPP passivation protection layer in the said groove; It is characterized in that, also be provided with a circle cutting protection zone in the outside of said groove outer rim.

2. sycon GPP passivation protection diode chip for backlight unit according to claim 1 is characterized in that the width of said cutting protection zone is the 5-35% of said recess width.