CN202534677U - Superradiance luminous tube based on quantum dot and quantum well material mixed structure - Google Patents
Superradiance luminous tube based on quantum dot and quantum well material mixed structure Download PDFInfo
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- CN202534677U CN202534677U CN2012201556459U CN201220155645U CN202534677U CN 202534677 U CN202534677 U CN 202534677U CN 2012201556459 U CN2012201556459 U CN 2012201556459U CN 201220155645 U CN201220155645 U CN 201220155645U CN 202534677 U CN202534677 U CN 202534677U
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Abstract
The utility model relates to a semiconductor device, especially to a superradiance luminous tube based on a quantum dot and quantum well material mixed structure, comprising a lower electrode, a substrate, a lower separating limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper separating limiting layer, a cover layer, a medium film layer and an upper electrode arranged orderly. The superradiance luminous tube based on the quantum dot and quantum well material mixed structure is characterized in that the active layer is the quantum dot and quantum well material mixed structure, and the superradiance luminous tube is wide in light spectrum and high in output power.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly a kind of super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure.
Background technology
Superradiance is amplified spontaneous emission ASE (Amplifier Spontaneous Emission), is a kind of directed radiation phenomenon of gain media under strong excited state.When the excitation density in the gain media is enough high; Charge carrier in the gain media receives exciting of spontaneous ballistic phonon; Make the photon numbers avalanche multiplication of stimulated emission; Luminous intensity sharply increases on superlinearity ground thereupon, and spectral width is narrowed down, and accounts for leading very fast developing into amplified spontaneous by initial spontaneous emission and is emitted as the master.Super-radiance light emitting diode (SLD) is a kind of semiconductor light source between laser (LD) and light-emitting diode (LED); It has that power output height, spectral width are wide, good stability, beam directionality are good; And good characteristic such as coherence length is short, can desirable light source be provided for optic fiber gyroscope etc.Along with the further expansion of optical communication and optical applications, it can also be used for optical time domain reflectometer, Optical Coherence Tomography Imaging Technology, light wavelength-multiplexing systems, optical information processing technology.Comparing it with other luminescent device has apparent in view advantage, so suitable wide of its application prospect.
Since first SLD invention, people with regard to the luminous power that how to improve it with coupled power, increase spectral width, reduce coherence length, improve modulating frequency, reduce the spectral modulation degree of depth, problems such as reduction temperature characterisitic, carried out extensive studies work.The method that improves device performance is at present mainly done from two aspects: one, on the technology of element manufacturing, mainly be that the sharp of suppression device F-P chamber penetrated effectively, this is the necessary condition that superradiance takes place.The method that often adopts has: uptake zone inhibition, vapor deposition anti-reflective film, inclination angle suppression characteristic etc.; Two, on the material of device, develop into single quantum well from the body material, from the single quantum well to the MQW, arrive quantum-dot structure again.For SQW SLD, the charge carrier one dimension is limited in the narrow band gap active area materials, and a type stair-stepping density of electronic states makes the SLD operating current significantly reduce, and power output obviously improves.Further, adopt non-homogeneous multi-quantum pit structure, the quantum well layer of promptly introducing different in width utilizes the ground state level transition of these SQWs simultaneously as the SLD active area, and the device output spectrum can obtain further broadening.But for non-homogeneous MQW SLD, because different in width SQW ground state transition energy is discontinuous, this multi-level luminous superposition causes the out-of-shape of bands of a spectrum more.For quanta point material, its electronics all is restricted three dimensions, has the density of states as atom, and electronics, the photonic propulsion device that adopts quantum dot to make has the performance more excellent than SQW in theory.Be similar to the same discrete energy levels of atom although each quantum dot has, the distribution of sizes of quantum dot generally satisfies Gaussian distribution, and the ground state of different size quantum dot overlaps on excited level, makes the energy level approximate continuous of quantum dot set distribute.Therefore, when increasing injection current raising spectral width, quantum dot ground states and excitation state are contributed the spectrum output that is easy to obtain regular shape simultaneously.Even so, but in theory, preparing on the high-power SLD, SQW and body material will have superiority than quantum dot.
Though own through comparative maturity for the theoretical research of SLD at present, increasing new application requirements SLD has better performance.This just requires us constantly to improve device technology and material, adopts new device architecture and penetrates so that suppress better to swash.Therefore, carry out technology and the investigation of materials of superradiance device and the performance improved entire device has very important significance.
Summary of the invention
The purpose of the utility model is to provide a kind of super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure, this super radiation light emitting tube spectral width, and power output is high.
For realizing above-mentioned purpose; The technical scheme of the utility model is: a kind of super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure; Comprise the bottom electrode that sets gradually, substrate, down the separation limit layer, down graded index ducting layer, active layer, go up the graded index ducting layer, go up the separation limit layer, cap rock, media coating, top electrode constitute, said active layer is quantum dot and quantum-well materials mixed structure.
In the utility model embodiment one; Above-mentioned quantum dot and quantum-well materials mixed structure are two-layer or sandwich construction; Said double-layer structure is by along the single quantum dot layer on the material direction of growth with single quantum well layer is range upon range of constitutes, and said sandwich construction is by along a plurality of quantum dot layers on the material direction of growth with a plurality of quantum well layer is range upon range of constitutes.
Above-mentioned quantum dot and quantum-well materials mixed structure comprise barrier layer on a lower barrierlayer and; Be provided with one or more quantum dot layer and one or more quantum well layer between said lower barrierlayer and the last barrier layer; Be provided with a some wall between the two adjacent quantum dot layers, be provided with a trap wall between adjacent quantum dot layer and the quantum well layer.
In the utility model embodiment two; Above-mentioned quantum dot and quantum-well materials mixed structure be by constituting perpendicular to single quantum dot region on the material direction of growth and single quantum well region, or be made up of a plurality of quantum dot region that are arranged alternately perpendicular to the material direction of growth and a plurality of quantum well region; Said quantum dot region is made up of one or more quantum dot layer, and said quantum well region is made up of one or more quantum well layer.
The top electrode of above-mentioned quantum dot region and quantum well region separates, and forms two or more pumping areas with bottom electrode, and the centre is provided with electrode isolation bar district.
The beneficial effect of the utility model is the characteristic that can utilize non-homogeneous, the continuous distribution of the peculiar size of quantum dot itself, size; Realize superradiation light-emitting diode spectrum output characteristic level and smooth, broad; Utilize the quantum well structure not only can spread spectrum simultaneously; More can improve power output, result of use is good, has very strong Practical significance.
Description of drawings
Fig. 1 is the overall structure sketch map based on the super radiation light emitting tube of quantum dot and quantum-well materials mixed structure of the utility model.
Fig. 2 is quantum dot and the quantum-well materials mixed structure sketch map of the utility model embodiment one.
Fig. 3 is quantum dot and the quantum-well materials mixed structure sketch map of the utility model embodiment two.
Fig. 4 is the structural representation of the bar shaped current injection area of the utility model embodiment.
Embodiment
The super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure of the utility model; As shown in Figure 1, comprise the bottom electrode 1 that from bottom to top sets gradually, substrate 2, down separation limit layer 3, down graded index ducting layer 4, active layer 5, go up graded index ducting layer 6, go up separation limit layer 7, cap rock 8, media coating 9, top electrode 10 constitute.Said active layer 5 is quantum dot and quantum-well materials mixed structure.Said deielectric-coating is deposited on the separation limit layer, on deielectric-coating, erodes away the bar shaped current injection area of inclination; The strip electrode injection region can also be divided into multistage through deielectric-coating.
In the utility model embodiment one, said quantum dot and quantum-well materials mixed structure are to mix the two-layer or sandwich construction of forming by quantum dot layer and quantum well layer, and material is three or five family's semiconductors.Said double-layer structure is by along the single quantum dot layer on the material direction of growth with single quantum well layer is range upon range of constitutes, and said sandwich construction is by along a plurality of quantum dot layers on the material direction of growth with a plurality of quantum well layer is range upon range of constitutes.
As shown in Figure 2, above-mentioned quantum dot and quantum-well materials mixed structure comprise barrier layer 16 on a lower barrierlayer 11 and.Long on the lower barrierlayer 11 have quantum well layer 12 or quantum dot layer 14, as the carrier of quantum well layer 12 or quantum dot layer 14, and plays the effect of limiting carrier.Last barrier layer 16 grows in to be gone up on a quantum dot layer 14 or the quantum well layer 12 most.Should go up barrier layer 16 can be with carrier confinement within quantum dot layer 14 and quantum well layer 12 with lower barrierlayer 11.Be provided with one or more quantum dot layer 14 and one or more quantum well layer 12 between said lower barrierlayer 11 and the last barrier layer 16.Be provided with a some wall 15 between the two adjacent quantum dot layers, play the effect of cutting apart two adjacent quantum dot layers 14; Be provided with a trap wall 13 between adjacent quantum dot layer and the quantum well layer.
Wherein, quantum dot layer 14 is three or five family's materials with quantum well layer 12, through the component of material and the deposition of quantum dot or SQW in adjusting quantum dot layer 14 and the quantum well layer 12, just can change emission wavelength.If contain a plurality of quantum dot layers 14, the component of each quantum dot layer 14 can be identical with deposition, also can be different; The component of each layer quantum dot can be identical with deposition in same many quantum dot layers, also can be different.If contain a plurality of quantum well layers 12, the component of each quantum well layer can be identical with deposition, also can be different; The component of each layer SQW can be identical with deposition in the same multiple quantum well layer, also can be different.
Wherein, last barrier layer 16, some trap wall 13, some point wall 15 are three or five family's materials with lower barrierlayer 11, through regulating the component of material, make the energy gap of material greater than the energy gap of quantum dot layer 14 materials.The component of last barrier layer 16, some trap wall 13, some point wall 15 and the material of lower barrierlayer 11 can be identical, also can difference.
The succession of SQW and quantum dot can be the quantum well layer regrowth quantum dot layer of growing earlier, also can be the quantum dot layer regrowth quantum well layer of growing earlier, and quantum well layer and quantum dot layer can also alternating growths.
In the utility model embodiment two; Said quantum dot and quantum-well materials mixed structure are by constituting perpendicular to single quantum dot region on the material direction of growth and single quantum well region; Or constitute by a plurality of quantum dot region that are arranged alternately perpendicular to the material direction of growth 22 and a plurality of quantum well region 23, material is three or five family's semiconductors.
As shown in Figure 3, said quantum dot region 22 can contain one or more quantum dot layer 21, has a quantum dot region 22 at least; Said quantum well region 23 can be single quantum well layer or multiple quantum well layer, has a quantum well region 23 at least.
The top electrode of above-mentioned quantum dot region and quantum well region separates, and forms two or more pumping areas with bottom electrode, and the centre is provided with electrode isolation bar district.
Through the component of material and the deposition of quantum dot in the adjusting quantum dot layer 21, just can change emission wavelength.If contain a plurality of quantum dot region 22, the component of each quantum dot region can be identical with deposition, also can be different; If contain a plurality of quantum dot layers 21, the component of each layer quantum dot can be identical with deposition in same many quantum dot region, also can be different.
Component and deposition through quantum well layer material in the quantum well district 23 just can change emission wavelength.If contain a plurality of quantum well region 23, the component of SQW can be identical with deposition in each quantum well region, also can be different; If contain a plurality of quantum well layers, the component of each layer SQW can be identical with deposition in the same multiquantum well region, also can be different.
Each layer quantum dot or SQW are clipped between two walls.Through control interval layer material component, make the energy gap of material greater than the energy gap of quantum dot layer or quantum well layer material.The component of the material of each wall can be identical, also can be different.If have only single quantum dot layer or single quantum well layer, just need not this wall.
The succession of quantum well region and quantum dot region can be the quantum well region of growing earlier, and regrowth quantum dot region after the photoetching also can be the quantum dot region of growing earlier, regrowth quantum well region after the photoetching.
Device bar shaped current injection area can be divided into multistage through deielectric-coating 31, and the current injection area that makes quantum dot region and quantum well region separately.
Below in conjunction with embodiment the utility model is described further.
Embodiment 1:
Active area is: be SQW and quantum dot with InGaAsP, AlGaInAs or InGaAsP are potential barrier.
By pre-designed epitaxial structure, adopt MOCVD or MBE to grow epitaxial loayer.Concrete step is: the resilient coating of on the InP substrate, growing earlier; The regrowth under-clad layer, sch layer, the core of the utility model of growing then: quantum dot and quantum-well materials are mixed with the source region; 5 layers of quantum well layer of elder generation's growth; Wherein the thickness of trap layer is: 5-8nm, and the thickness of building layer is: between the 5-10nm, strain is all in 1.2%; Many quantum dot layers of growing then, quantum dot layer has 5 cycles, wall 3-10nm, emission center wavelength is 1.1um-1.7um scope (concrete parameter is different and different by design).Above-mentioned these extensions can realize accurate control on MOCVD.
Embodiment 2:
Active area is: be SQW and quantum dot with InGaAsP, AlGaInAs or InGaAsP are potential barrier.
By pre-designed epitaxial structure, adopt MOCVD or MBE to grow epitaxial loayer.Concrete step is: the resilient coating of on the InP substrate, growing earlier; The regrowth under-clad layer, sch layer, the core of the utility model of growing then: quantum dot and quantum-well materials are mixed with the source region; 5 layers of quantum well layer of elder generation's growth; Wherein the thickness of trap layer is: 5-8nm, and the thickness of building layer is: between the 5-10nm, strain is all in 1.2%; After the photoetching; Further through wet method or dry etching part quantum well region, many quantum dot layers of the region growing after etching subsequently, quantum dot layer has 5 cycles; Wall 3-10nm, emission center wavelength is 1.1um-1.7um scope (concrete parameter is different and different by design).This quantum dot and quantum-well materials are mixed with the growth pattern in source region, the quantum dot layer in 5 cycles of also growing earlier, 5 layers of quantum well layer of regrowth after the photoetching.
Embodiment 3:
As shown in Figure 4; On the basis of embodiment 2, the cap rock 8 back deposition medium retes 9 of having grown form multistage bar shaped current injection area 32 after the photoetching; Each section current injection area separates the current injection area of quantum dot region 22 and quantum well region 23 through separating through deielectric-coating 31.
More than be the preferred embodiment of the utility model, all changes of being done according to the utility model technical scheme when the function that is produced does not exceed the scope of the utility model technical scheme, all belong to the protection range of the utility model.
Claims (5)
1. super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure; Comprise the bottom electrode that sets gradually, substrate, down separation limit layer, lower waveguide layer, active layer, go up ducting layer, go up the separation limit layer, cap rock, media coating, top electrode constitute, it is characterized in that: said active layer is quantum dot and quantum-well materials mixed structure.
2. according to the described super radiation light emitting tube of claim l based on quantum dot and quantum-well materials mixed structure; It is characterized in that: said quantum dot and quantum-well materials mixed structure are two-layer or sandwich construction; Said double-layer structure is by along the single quantum dot layer on the material direction of growth with single quantum well layer is range upon range of constitutes, and said sandwich construction is by along a plurality of quantum dot layers on the material direction of growth with a plurality of quantum well layer is range upon range of constitutes.
3. the super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure according to claim 2; It is characterized in that: said quantum dot and quantum-well materials mixed structure comprise barrier layer on a lower barrierlayer and; Be provided with one or more quantum dot layer and one or more quantum well layer between said lower barrierlayer and the last barrier layer; Be provided with a some wall between the two adjacent quantum dot layers, be provided with a trap wall between adjacent quantum dot layer and the quantum well layer.
4. according to the described super radiation light emitting tube of claim l based on quantum dot and quantum-well materials mixed structure; It is characterized in that: said quantum dot and quantum-well materials mixed structure be by constituting perpendicular to single quantum dot region on the material direction of growth and single quantum well region, or be made up of a plurality of quantum dot region that are arranged alternately perpendicular to the material direction of growth and a plurality of quantum well region; Said quantum dot region is made up of one or more quantum dot layer, and said quantum well region is made up of one or more quantum well layer.
5. the super radiation light emitting tube based on quantum dot and quantum-well materials mixed structure according to claim 4; It is characterized in that: the top electrode of said quantum dot and quantum-well materials mixed structure separates; Form two or more pumping areas with bottom electrode, the centre is provided with electrode isolation bar district.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012201556459U CN202534677U (en) | 2012-04-13 | 2012-04-13 | Superradiance luminous tube based on quantum dot and quantum well material mixed structure |
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| CN2012201556459U CN202534677U (en) | 2012-04-13 | 2012-04-13 | Superradiance luminous tube based on quantum dot and quantum well material mixed structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623591A (en) * | 2012-04-13 | 2012-08-01 | 苏辉 | Super-radiation light-emitting tube based on mixed structure of quantum dot and quantum well material |
| CN105934832A (en) * | 2014-01-27 | 2016-09-07 | Qd激光公司 | Semiconductor light-emitting element |
| CN106877173A (en) * | 2017-02-28 | 2017-06-20 | 苏州达沃特光电科技有限公司 | A kind of SQW/quantum dot hybrid laser chip structure for medical and beauty treatment laser |
-
2012
- 2012-04-13 CN CN2012201556459U patent/CN202534677U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623591A (en) * | 2012-04-13 | 2012-08-01 | 苏辉 | Super-radiation light-emitting tube based on mixed structure of quantum dot and quantum well material |
| CN105934832A (en) * | 2014-01-27 | 2016-09-07 | Qd激光公司 | Semiconductor light-emitting element |
| CN105934832B (en) * | 2014-01-27 | 2018-12-28 | Qd激光公司 | Semiconductor light-emitting elements |
| CN106877173A (en) * | 2017-02-28 | 2017-06-20 | 苏州达沃特光电科技有限公司 | A kind of SQW/quantum dot hybrid laser chip structure for medical and beauty treatment laser |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20121114 Effective date of abandoning: 20141217 |
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| RGAV | Abandon patent right to avoid regrant |