CN202503492U - High-power MOSFET driver - Google Patents
High-power MOSFET driver Download PDFInfo
- Publication number
- CN202503492U CN202503492U CN2011205043058U CN201120504305U CN202503492U CN 202503492 U CN202503492 U CN 202503492U CN 2011205043058 U CN2011205043058 U CN 2011205043058U CN 201120504305 U CN201120504305 U CN 201120504305U CN 202503492 U CN202503492 U CN 202503492U
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- power mosfet
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Abstract
The utility model relates to a high-power MOSFET driver. A TTL-type MOSFET drive signal passes through an input unit of a photoisolator U1 and then the signal is inputted into a negative terminal of a comparator U2; after the comparison, the signal passes through a current-limiting resistor R5 and is inputted into base electrodes of geminate transistor drivers Q1 and Q2, wherein emitter outputs of the Q1 and the Q2 are connected; the signal passes through a current-limiting protective resistor R6 and a high-power MOSFET is driven; and the output terminal of the high-power MOSFET is connected with a ground terminal of a drive circuit, thereby forming a drive current loop. According to the utility model, the high-power MOSFET driver has a good driving capability and enables electrical isolation to be realized, so that one or dozens of even a hundred of high-power MOSFETs can be driven to work in parallel and the performance is stable and reliable; and the driven can give full play to the control advantage especially on a precision large-current closed-loop occasion.
Description
Technical field
The utility model relates to a kind of high-power MOSFET driver, belongs to Current Control and voltage frequency conversion detection range.
Background technology
Current, high-power MOSFET is used has certain particularity, especially high voltage occasion; Its control both type of can be used as relay system is done; Also can be used as constant current charge closed-loop control core, usually, the driving voltage of high-power MOSFET is in light current voltage negative 10 to positive 30V.Its forward voltage is to open high-power MOSFET tube, oppositely adds negative pressure mainly for reliable turn-off, because its design particularity, simultaneously, high-power MOSFET is of a great variety, therefore needs a general driving, drives the high-power MOSFET tube reliably working.
Summary of the invention
The utility model relates to a kind of high-power MOSFET driver, to realize the reliable driving to all kinds of high-power MOSFETs.
For realizing above-mentioned purpose, the utility model adopts following technical scheme: the MOSFET drive signal of TTL formula, through low voltage voltage and current-limiting resistance R1; Through the input unit of photoisolator U1, realize the isolation of input signal then, the output signal is through positive supply; Through output current limiting resistance R 2, through the output unit of photoisolator U1, insert negative ground more again; The positive-negative power here is the power supply through isolating of a special use, and warp is isolated the signal of output again through current-limiting resistance R3, is input to the negative terminal of comparator U2; The anode of comparator U2 is received ground through resistance R 3, and signal is after relatively, again through current-limiting resistance R5; Be input on the base stage to pipe driver Q1 and Q2, the output of the emitter-base bandgap grading of Q1 and Q2 links, then through current-limiting protection resistance R 6; Drive high-power MOSFET again, the output of high-power MOSFET and the ground of drive circuit join, and form the drive current loop.
Above-mentioned photoisolator U1 realizes the isolation of input signal.
Above-mentioned comparator U2, it can be a dedicated comparator, also can be the comparator that is made up of amplifier.
Above-mentioned to pipe driver Q1 and Q2, be used to enlarge fan-out capability.
The output of above-mentioned high-power MOSFET and the ground of drive circuit join; Form the drive current loop, high-power MOSFET is main Be Controlled device, and big electric current input is flowed into by high-power MOSFET top; Through high-power MOSFET, the big electric current output from the high-power MOSFET bottom then.
The utility model beneficial effect: it is big to have driving force, and electric isolation fully can drive one or dozens of to hundred a high-power MOSFET while parallel operation, and is stable and reliable for performance, especially in the big current closed-loop occasion of precision, more can bring into play its control advantage.
Description of drawings:
Accompanying drawing 1 is the former figure of the circuit working of the utility model.
Embodiment:
For the technical scheme that makes the utility model is clearer, below in conjunction with accompanying drawing and embodiment, to the utility model further explain, instantiation described herein only in order to explain the utility model, is not limited to the utility model.
Embodiment:
See also shown in the accompanying drawing 1, the MOSFET drive signal of TTL formula is through low voltage voltage and current-limiting resistance R1, then through the input unit of photoisolator U1; Realize the isolation of input signal, the output signal is through positive supply, again through output current limiting resistance R 2, again through the output unit of photoisolator U1; Insert negative ground, the positive-negative power here is the power supply through isolating of a special use, through isolating defeated signal again through current-limiting resistance R3, is input to the negative terminal of comparator U2; The anode of comparator U2 is received ground through resistance R 3, and signal is after relatively, again through current-limiting resistance R5; Be input on the base stage to pipe driver Q1 and Q2, the output of the emitter-base bandgap grading of Q1 and Q2 links, then through current-limiting protection resistance R 6; Drive high-power MOSFET again, the output of high-power MOSFET and the ground of drive circuit join, and form the drive current loop.MOSFET drive signal for the TTL formula of importing; It can be the current potential mode; Major control also can be the signal of integrated form, when being integrated signal in high-current switch; At this moment the highly sensitive device of the general selection of photoelectricity isolated tube is to make the response of coupling quick and precisely to integrated signal.
Claims (5)
1. a high-power MOSFET driver has following characteristic: the MOSFET drive signal of TTL formula, process low voltage voltage and current-limiting resistance R1; Through the input unit of photoisolator U1, realize the isolation of input signal then, the output signal is through positive supply; Through output current limiting resistance R 2, through the output unit of photoisolator U1, insert negative ground more again; The positive-negative power here is the power supply through isolating of a special use, and warp is isolated the signal of output again through current-limiting resistance R3, is input to the negative terminal of comparator U2; The anode of comparator U2 is received ground through resistance R 3, and signal is after relatively, again through current-limiting resistance R5; Be input on the base stage to pipe driver Q1 and Q2, the output of the emitter-base bandgap grading of Q1 and Q2 links, then through current-limiting protection resistance R 6; Drive high-power MOSFET again, the output of high-power MOSFET and the ground of drive circuit join, and form the drive current loop.
2. a kind of high-power MOSFET driver according to claim 1 is characterized in that: have photoisolator U1, realize the isolation of input signal.
3. a kind of high-power MOSFET driver according to claim 1 is characterized in that: have a comparator U2, it can be a dedicated comparator, also can be the comparator that is made up of amplifier.
4. a kind of high-power MOSFET driver according to claim 1 is characterized in that: have pipe driver Q1 and Q2, be used to enlarge fan-out capability.
5. a kind of high-power MOSFET driver according to claim 1 is characterized in that: the output of high-power MOSFET and the ground of drive circuit join, and form the drive current loop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205043058U CN202503492U (en) | 2011-12-07 | 2011-12-07 | High-power MOSFET driver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205043058U CN202503492U (en) | 2011-12-07 | 2011-12-07 | High-power MOSFET driver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202503492U true CN202503492U (en) | 2012-10-24 |
Family
ID=47040089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205043058U Expired - Fee Related CN202503492U (en) | 2011-12-07 | 2011-12-07 | High-power MOSFET driver |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202503492U (en) |
-
2011
- 2011-12-07 CN CN2011205043058U patent/CN202503492U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121024 Termination date: 20141207 |
|
| EXPY | Termination of patent right or utility model |