CN202487626U - Semitransparent light-splitting amorphous silicon film solar panel - Google Patents
Semitransparent light-splitting amorphous silicon film solar panel Download PDFInfo
- Publication number
- CN202487626U CN202487626U CN 201220100459 CN201220100459U CN202487626U CN 202487626 U CN202487626 U CN 202487626U CN 201220100459 CN201220100459 CN 201220100459 CN 201220100459 U CN201220100459 U CN 201220100459U CN 202487626 U CN202487626 U CN 202487626U
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- China
- Prior art keywords
- amorphous silicon
- layer
- transparent conductive
- film solar
- solar panel
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a semitransparent light-splitting amorphous silicon film solar panel comprising a solar battery chip and back-plate glass, wherein the solar battery chip is formed by sequentially plating a PIN layer and a transparent conductive coating layer on the surface layer of the conductive glass; the transparent conductive coating layer and the back-plate glass are adhered and packaged. The transparent conductive coating layer is sputtered to the PIN layer to ensure that the solar panel is transparent; the solar panel can generate electricity by using sunlight, with the electricity-generating efficiency as high as 6%; the solar panel can be used for supplementing insufficient solar energy and supplying a required power supply at night; and the panel can be transparent, the transmittance can reach about 45% at 850nm, and the electricity-generating function can be kept in a dim light environment.
Description
Technical field
The utility model belongs to the material applied technical field of solar panel, and what be specifically related to is a kind of translucent beam split amorphous silicon thin-film solar cell plate.
Background technology
Although amorphous silicon is a kind of good battery material as solar energy materials,, make material itself insensitive to the Long wavelength region of solar radiation spectrum because its optical band gap is 1.7eV; So just limited the conversion efficiency of non-crystal silicon solar cell, in addition, its photoelectric efficiency can decay along with the continuity of light application time; It is so-called photic decline S-W effect; Make battery performance unstable, and its back electrode does not have the printing opacity function fully owing to adopt aluminium film.
Summary of the invention
The purpose of the utility model is to overcome the deficiency that prior art exists, and a kind of translucent beam split amorphous silicon thin-film solar cell plate is provided.
For realizing above-mentioned purpose; The technical solution of the utility model is: translucent beam split amorphous silicon thin-film solar cell plate; Comprise solar battery chip and back-panel glass; Said solar battery chip plates the PIN layer successively by the top layer of electro-conductive glass and the transparent conductive coatings layer constitutes, the wherein bonding encapsulation of transparent conductive coatings layer and back-panel glass.
Said transparent conductive coatings layer adopts any in AZO target, GZO target, the ITO target.
Adopt any bonding in EVA, PVB, the sarin glue between said transparent conductive coatings layer and the back-panel glass.
The thickness of said PIN layer is the 3000-8000 dust.
Said back-panel glass is connected with terminal box.
Through adopting above-mentioned technical scheme, the beneficial effect of the utility model is: the utility model is transparent through sputter transparent conductive coatings layer on the PIN layer thereby reach solar panel; This solar panel can utilize sunlight to generate electricity, and generating efficiency is up to 6%, can in night to the not enough supply that replenishes and need power supply of solar energy source; And cell panel can printing opacity; 850nm can reach about 45%, at low light environment, also can maintain electricity generate function; This cell panel also helps absorbing of sorting spectrum, especially:
A, 300nm-550nm absorb fully and generate electricity, and the light of this wavelength of part insect hobby can let insect in this environment, adapt to simultaneously;
B, 600nm-750nm see through about 10%-30%, help photosynthesis of plants;
C, 850nm help heat insulation effect about 45%.
Description of drawings
Below in conjunction with accompanying drawing the utility model technical scheme is described further:
Figure l is the structural representation of the utility model.
Embodiment
As shown in Figure 1; The translucent beam split amorphous silicon thin-film solar cell plate of the utility model; Comprise solar battery chip 1 and back-panel glass 2; Said solar battery chip 1 plates PIN layer 12 successively by the top layer of electro-conductive glass 11 and constitutes with transparent conductive coatings layer 13, and electro-conductive glass 11 increases the transmitance of light, thereby reaches better spectrophotometric result; On electro-conductive glass 11, carry out laser grooving and scribing, to realize on the electro-conductive glass plurality of sub battery being arranged; The thickness of said PIN layer 12 is the 3000-8000 dust, has conductive effect; Adopt any bonding encapsulation in EVA, PVB, the sarin glue between said transparent conductive coatings layer 13 and the back-panel glass 2; Thickness and composition adjustment through PIN layer 12 and transparent back electrode; Can obtain different spectrophotometric results; Said transparent conductive coatings layer 13 adopts any in AZO targets, GZO target, the ITO target; To increase the transmitance of light, directly the positive and negative end at transparent conductive coatings layer 13 adds conductive collecting bar as lead-out wire, and back-panel glass 2 connects upward terminal box 3.
Above-described, be merely a kind of preferred embodiment of the utility model, can not limit the scope that the utility model is implemented, every equalization of being done according to the utility model claim changes and decorates, and all should still belong in the scope that the utility model contains.
Claims (5)
1. translucent beam split amorphous silicon thin-film solar cell plate; Comprise solar battery chip (1) and back-panel glass (2); It is characterized in that: said solar battery chip (1) plates PIN layer (12) and transparent conductive coatings layer (13) formation, wherein transparent conductive coatings layer (13) and the bonding encapsulation of back-panel glass (2) successively by the top layer of electro-conductive glass (11).
2. translucent beam split amorphous silicon thin-film solar cell plate according to claim 1 is characterized in that: said transparent conductive coatings layer (13) adopts any in AZO target, GZO target, the ITO target.
3. translucent beam split amorphous silicon thin-film solar cell plate according to claim 1 and 2 is characterized in that: adopt any bonding in EVA, PVB, the sarin glue between said transparent conductive coatings layer (13) and the back-panel glass (2).
4. translucent beam split amorphous silicon thin-film solar cell plate according to claim 1, it is characterized in that: the thickness of said PIN layer (12) is the 3000-8000 dust.
5. according to claim 1 or 3 described translucent beam split amorphous silicon thin-film solar cell plates, it is characterized in that: said back-panel glass (2) is connected with terminal box (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220100459 CN202487626U (en) | 2012-03-17 | 2012-03-17 | Semitransparent light-splitting amorphous silicon film solar panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220100459 CN202487626U (en) | 2012-03-17 | 2012-03-17 | Semitransparent light-splitting amorphous silicon film solar panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202487626U true CN202487626U (en) | 2012-10-10 |
Family
ID=46962022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220100459 Expired - Lifetime CN202487626U (en) | 2012-03-17 | 2012-03-17 | Semitransparent light-splitting amorphous silicon film solar panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202487626U (en) |
-
2012
- 2012-03-17 CN CN 201220100459 patent/CN202487626U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171114 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: 362005, 1303 Jiangnan high tech Zone, Licheng District, Fujian, Quanzhou Patentee before: Quanzhou City Botai Semiconductor Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121010 |