CN202455028U - Safe parallel connection device of high-power MOSFETs (metal-oxide semiconductor field-effect transistors - Google Patents
Safe parallel connection device of high-power MOSFETs (metal-oxide semiconductor field-effect transistors Download PDFInfo
- Publication number
- CN202455028U CN202455028U CN2011204987349U CN201120498734U CN202455028U CN 202455028 U CN202455028 U CN 202455028U CN 2011204987349 U CN2011204987349 U CN 2011204987349U CN 201120498734 U CN201120498734 U CN 201120498734U CN 202455028 U CN202455028 U CN 202455028U
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- China
- Prior art keywords
- parallel connection
- power mosfets
- oxide semiconductor
- metal
- connection device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a safe parallel connection device of high-power MOSFETs (metal-oxide semiconductor field-effect transistors; fuse tubes are additionally arranged in front of all high-power MOSFETs which are parallelly connected; when the working current of a single transistor exceeds the maximum rated current, the fuse tube is fused, so that the phenomenon that the whole equipment fails to work because one high-power MOSFET is damaged when a plurality of transistors are parallelly connected is overcome, and the safe work when the transistors are parallelly connected is ensured.
Description
Technical field
The utility model relates to a kind of safe shunting means of high-power MOSFET, belongs to battery detecting production and battery charging and discharging field.
Background technology
Current, to battery, when particularly high power battery discharges and recharges; Need a plurality of high-power MOSFET parallel connections just can reach requirement, because multitube parallel, if one is managed out and asks short circuit problem; Whole device can't operate as normal, causes the damage of charging/discharging apparatus, during maintenance; It also is very difficult finding the high-power MOSFET that goes wrong, and the utility model is exactly in order to improve these problems.
Summary of the invention
The utility model relates to a kind of safe shunting means of high-power MOSFET, to realize the safe parallel operation of high-power MOSFET.
For realizing above-mentioned purpose, the utility model adopts following technical scheme:
Include a plurality of high-power MOSFET tubes and insurance,, add an insurance, again parallel connection respectively to before high-power MOSFET tube.
In common device design, the operating current of high-power MOSFET multitube parallel has sizable design capacity; Wherein a pipe or several pipe damages during like open circuit, do not have much influences to integrated circuit; When short circuit, then armamentarium can not be worked, thus this device to all parallelly connected high-power MOSFET tubes before; Add an insurance, when the single tube operating current surpasses rated maximum current, protective tube fusing; Thereby damage the inoperable situation of entire equipment that causes, the trouble free service when having guaranteed multitube parallel because of a high-power MOSFET when avoiding multitube parallel.
Description of drawings:
Accompanying drawing 1 is that the electrical equipment of the utility model connects sketch map.
Embodiment:
For the technical scheme that makes the utility model is clearer, below in conjunction with accompanying drawing and embodiment, to the utility model further explain, instantiation described herein only in order to explain the utility model, is not limited to the utility model.
Embodiment:
See also shown in the accompanying drawing 1, a plurality of high-power MOSFET tube Q1, Q2, Q3, Q4 parallel connection are serially connected with F1, F2, F3, four insurances of F4 respectively on pipe, when A point input high potential control signal; Paralleling MOS FET pipe is opened, and electric current is from the input of B point, and four protective tube F1, F2, F3, F4 flow through; Then, the MOSFET that flows through again pipe Q1, Q2, Q3, Q4 flow into power supply ground at last; Accomplish entire work process, when one of them MOSFET tube short circuit, electric current surpasses rated current; Protective tube fusing, thus other three MOSFET pipe operate as normal protected, avoid the short circuit integral device to lose efficacy.
Claims (1)
1. the safe shunting means of a high-power MOSFET includes a plurality of high-power MOSFET tubes and insurance, it is characterized in that: respectively to before high-power MOSFET tube, add an insurance, again parallel connection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011204987349U CN202455028U (en) | 2011-12-05 | 2011-12-05 | Safe parallel connection device of high-power MOSFETs (metal-oxide semiconductor field-effect transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011204987349U CN202455028U (en) | 2011-12-05 | 2011-12-05 | Safe parallel connection device of high-power MOSFETs (metal-oxide semiconductor field-effect transistors |
Publications (1)
Publication Number | Publication Date |
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CN202455028U true CN202455028U (en) | 2012-09-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2011204987349U Expired - Fee Related CN202455028U (en) | 2011-12-05 | 2011-12-05 | Safe parallel connection device of high-power MOSFETs (metal-oxide semiconductor field-effect transistors |
Country Status (1)
Country | Link |
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CN (1) | CN202455028U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106340914A (en) * | 2015-07-10 | 2017-01-18 | 矢崎总业株式会社 | Feeding device and electrical junction box |
CN108736869A (en) * | 2018-04-27 | 2018-11-02 | 深圳市费思泰克科技有限公司 | Electronic load metal-oxide-semiconductor driver protects circuit |
CN112311208A (en) * | 2020-11-11 | 2021-02-02 | 四川灵通电讯有限公司 | Multi-field effect tube parallel assembly for high-voltage electronic analog load |
-
2011
- 2011-12-05 CN CN2011204987349U patent/CN202455028U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106340914A (en) * | 2015-07-10 | 2017-01-18 | 矢崎总业株式会社 | Feeding device and electrical junction box |
CN108736869A (en) * | 2018-04-27 | 2018-11-02 | 深圳市费思泰克科技有限公司 | Electronic load metal-oxide-semiconductor driver protects circuit |
CN112311208A (en) * | 2020-11-11 | 2021-02-02 | 四川灵通电讯有限公司 | Multi-field effect tube parallel assembly for high-voltage electronic analog load |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120926 Termination date: 20121205 |