CN202454547U - 带有复合钝化膜的大功率器件 - Google Patents

带有复合钝化膜的大功率器件 Download PDF

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CN202454547U
CN202454547U CN2012200660582U CN201220066058U CN202454547U CN 202454547 U CN202454547 U CN 202454547U CN 2012200660582 U CN2012200660582 U CN 2012200660582U CN 201220066058 U CN201220066058 U CN 201220066058U CN 202454547 U CN202454547 U CN 202454547U
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power device
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high power
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许志峰
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JIANGSU DONGCHEN ELECTRONICS TECHNOLOGY CO., LTD.
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YIXING DONGCHEN ELECTRONIC TECHNOLOGY Co Ltd
JIANGSU DONGGUANG MICRO-ELECTRONICS Co Ltd
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Abstract

一种带有复合钝化膜的大功率器件，在大功率器件的PN结表面，从内至外依次为多晶硅薄膜（1）、掺氧多晶硅薄膜SIPOS（2）、玻璃（3）和氧化硅薄膜（4）。本实用新型的带有复合钝化膜的大功率器件，相比于传统的PN结表面单一玻璃钝化防护层的结构，采用PN结表面多层防护结构，由于其对于界面所有电荷具有自动调节、补偿、屏蔽、消除作用，彻底消除了击穿电压突变现象，使器件在高温、高湿、强电场等恶劣条件下也能长时间工作；并且相比传统的PN结表面玻璃钝化层可提高PN结的击穿电压。

Description

带有复合钝化膜的大功率器件
技术领域
 本实用新型涉及一种大功率器件，尤其是PN结表面带有多层防护的大功率器件，具体地说是一种带有复合钝化膜的大功率器件。
背景技术
目前，大功率器件的PN结表面通常采用单一的玻璃钝化防护工艺，只有一层玻璃防护层，不具有自动调节、补偿、屏蔽、消除的功能，不能有效消除击穿电压的突变现象，器件在高温、高湿、强电场等恶劣条件下不能长时间工作。
发明内容
本实用新型的目的是针对现有的大功率器件的PN结表面通常采用单一的玻璃钝化防护工艺，只有一层玻璃防护层，不能有效消除击穿电压的突变现象，器件在高温、高湿、强电场等恶劣条件下不能长时间工作的问题，提出一种带有复合钝化膜的大功率器件。
本实用新型的技术方案是：
一种带有复合钝化膜的大功率器件，在大功率器件的PN结表面，从内至外依次为多晶硅薄膜、掺氧多晶硅薄膜SIPOS、玻璃和氧化硅薄膜。
本实用新型的多晶硅薄膜为多晶硅层，厚度为200~400?m。
本实用新型的掺氧多晶硅薄膜SIPOS的厚度为5000~10000 ?m。
本实用新型的氧化硅薄膜为二氧化硅层，厚度为4000~10000 ?m。
本实用新型的有益效果：
本实用新型的带有复合钝化膜的大功率器件，相比于传统的PN结表面单一玻璃钝化防护层的结构，采用PN结表面多层防护结构，由于其对于界面所有电荷具有自动调节、补偿、屏蔽、消除作用，彻底消除了击穿电压突变现象，使器件在高温、高湿、强电场等恶劣条件下也能长时间工作；并且相比传统的PN结表面玻璃钝化层可提高PN结的击穿电压。
附图说明
图1是本实用新型的结构示意图。
图中：1、多晶硅薄膜；2、掺氧多晶硅薄膜SIPOS；
3、玻璃；4、氧化硅薄膜。
具体实施方式
下面结合附图和实施例对本实用新型作进一步的说明。
如图1所示，一种带有复合钝化膜的大功率器件，在大功率器件的PN结表面，从内至外依次为多晶硅薄膜1、掺氧多晶硅薄膜SIPOS2、玻璃3和氧化硅薄膜4。
本实用新型的多晶硅薄膜1为多晶硅层，厚度为200~400?m；掺氧多晶硅薄膜SIPOS2的厚度为5000~10000 ?m；氧化硅薄膜4为二氧化硅层，厚度为4000~10000 ?m。
具体实施时：
用机械割槽或化学腐蚀的方法暴露出PN结表面,在其表面先用LPCVD方法生长一层二氧化硅层再在上面生长一层SIPOS层,然后在上面覆盖一层玻璃层最后在外表面用LPCVD方法生长一层二氧化硅层,该工艺相比于传统的PN结表面单一玻璃钝化防护工艺，采用PN结表面多层防护工艺技术，由于其对于界面所有电荷具有自动调节、补偿、屏蔽、消除作用，彻底消除了击穿电压突变现象，使器件在高温、高湿、强电场等恶劣条件下也能长时间工作；并且相比传统的PN结表面玻璃钝化防护工艺可提高PN结的击穿电压。
本实用新型未涉及部分均与现有技术相同或可采用现有技术加以实现。

Claims (4)

1.一种带有复合钝化膜的大功率器件，其特征是在大功率器件的PN结表面，从内至外依次为多晶硅薄膜（1）、掺氧多晶硅薄膜SIPOS（2）、玻璃（3）和氧化硅薄膜（4）。
2.根据权利要求1所述的带有复合钝化膜的大功率器件，其特征是所述的多晶硅薄膜（1）为多晶硅层，厚度为200~400?m。
3.根据权利要求1所述的带有复合钝化膜的大功率器件，其特征是所述的掺氧多晶硅薄膜SIPOS（2）的厚度为5000~10000 ?m。
4.根据权利要求1所述的带有复合钝化膜的大功率器件，其特征是所述的氧化硅薄膜（4）为二氧化硅层，厚度为4000~10000 ?m。
CN2012200660582U 2012-02-27 2012-02-27 带有复合钝化膜的大功率器件 Expired - Fee Related CN202454547U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826172A (zh) * 2016-05-13 2016-08-03 上海微世半导体有限公司 一种提升半导体芯片可靠性与良率的钝化保护方法
CN106783608A (zh) * 2016-12-22 2017-05-31 株洲中车时代电气股份有限公司 一种终端结构及其制作方法和功率半导体器件

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826172A (zh) * 2016-05-13 2016-08-03 上海微世半导体有限公司 一种提升半导体芯片可靠性与良率的钝化保护方法
CN106783608A (zh) * 2016-12-22 2017-05-31 株洲中车时代电气股份有限公司 一种终端结构及其制作方法和功率半导体器件
CN106783608B (zh) * 2016-12-22 2019-10-25 株洲中车时代电气股份有限公司 一种终端结构及其制作方法和功率半导体器件

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