CN202405998U - Stacked bus bar - Google Patents
Stacked bus bar Download PDFInfo
- Publication number
- CN202405998U CN202405998U CN 201120505020 CN201120505020U CN202405998U CN 202405998 U CN202405998 U CN 202405998U CN 201120505020 CN201120505020 CN 201120505020 CN 201120505020 U CN201120505020 U CN 201120505020U CN 202405998 U CN202405998 U CN 202405998U
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- pole plate
- layers
- bus bar
- bipolar transistor
- insulated gate
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Abstract
The utility model discloses a stacked bus bar, and solves the problems that a large number of conventional bus copper bars are required, the mounting process is complicated, and the stray inductance is relatively high. The stacked bus bar comprises a rectification bridge bus bar and an insulated gate bipolar transistor bus bar, wherein the rectification bridge bus bar comprises three layers of bus bars, namely the top layer comprises an N polar plate, the middle layer comprises an input polar plate R0, an input polar plate S0 and an input polar plate T0, and the bottom layer comprises an input P polar plate; and the insulated gate bipolar transistor bus bar comprises four layers of bus bars, namely the top layer comprises an N polar plate, the second layer comprises an O polar plate, the third layer comprises an output P polar plate, and the fourth layer comprises an insulated gate bipolar transistor connection plate. The stacked bus bar has the advantages that a large absorption capacitor is not required; the line distribution inductance is reduced through a structure that positive electrodes and negative electrodes are distributed in parallel, so that reversed peak voltage at two ends of a power element is reduced, the requirement of the power element on a voltage protection and absorption circuit is reduced, and the reliability and the stability of running of the power element are improved; and furthermore, the integration degree of the circuit is increased, the stacked bus bar is convenient to overhaul and maintain and insulated through mechanical package, and the insulation strength is improved.
Description
Technical field
The utility model relates to a kind of submersible electric pump motor and uses three-level converter, especially relates to the laminated bus bar of a kind of submersible electric pump motor with three-level converter.
Background technology
The submersible electric pump motor is many with traditional bus copper bar number of connection of required usefulness in the three-level converter, shape is changeable, making and mounting process is numerous and diverse, precision be difficult to guarantee, dielectric strength is poor, stray inductance is bigger.Because the stray inductance of DC link is at IGBT (Insulated Gate Bipolar Transistor, i.e. insulated gate bipolar transistor); Overvoltage can appear during shutoff; Overvoltage can be damaged insulated gate bipolar transistor, need between the C of insulated gate bipolar transistor, the E utmost point, connect to absorb electric capacity, makes structure complicated more; The poor reliability of bus copper bar system is considered that the on-the-spot electrical safety environment in oil field is very poor more need be electrically connected reliably.
The utility model content
The problem that traditional bus copper bar requirement is many, mounting process is numerous and diverse in order to solve, stray inductance is big, need to improve dielectric strength in the field operations environment provides a kind of laminated bus bar, and the utility model provides the laminated bus bar of a kind of submersible electric pump motor with three-level converter.
The utility model solves the technical scheme that its technical problem adopted: laminated bus bar comprises rectifier bridge busbar, insulated gate bipolar transistor busbar.The rectifier bridge busbar comprises three layers of busbar: top layer N pole plate, middle level input pole plate R0, input pole plate S0, input pole plate T0 and bottom input P pole plate.Three layers of mutual part lamination of busbar, middle bonding insulating barrier is provided with the electric capacity binding post on N pole plate and P pole plate, the location and the conductive hole that the preliminary filling binding post are arranged on the P pole plate and be provided with according to the rectifier bridge hole site, rectifier bridge busbar part outer surface is encapsulated by insulating barrier.The insulated gate bipolar transistor busbar comprises four layers of busbar: top layer N pole plate, two layers of O pole plate, three layers of output P pole plate, four layers of insulated gate bipolar transistor connecting plate.Top layer N pole plate and two layers of O pole plate part lamination; Middle bonding insulating barrier, two layers of O pole plate and three layers of output P pole plate part lamination, middle bonding insulating barrier; Three layers of output P pole plate and four layers of insulated gate bipolar transistor connecting plate part lamination, middle bonding insulating barrier; Export pole plate U, output pole plate W, output pole plate V and four layers of insulated gate bipolar transistor connecting plate part lamination in addition at the 3rd layer; Middle bonding insulating barrier; The preliminary filling binding post is arranged and according to the insulated gate bipolar transistor hole site location and conductive hole are set on the output P pole plate, insulated gate bipolar transistor busbar outer surface is encapsulated by insulating barrier.The cross section of laminated bus bar is a flat cross section.Insulating barrier adopts two two-sided gum PET films that base material is the thick 30 μ m of 0.188mm, single face glue.
The beneficial effect of the utility model is; Do not need big absorption capacitor; Version through the range upon range of parallel distribution of both positive and negative polarity reduces the circuit distributed inductance; Thereby reduce the peak-inverse voltage at power component two ends, reduce the requirement of power device, improve power device reliability of operation and stability voltage protection absorption circuit.Improved the integrated level of circuit simultaneously, be convenient to maintenance maintenance,, strengthened dielectric strength through the mechanical encapsulation insulation.
Description of drawings
Fig. 1 is the utility model laminated bus bar structural representation.
Fig. 2 is three layers of busbar transversal profile figure in the utility model.
Fig. 3 is four layers of busbar transversal profile figure in the utility model.
Fig. 4 is the rectification electrical schematic diagram
Fig. 5 is the inversion electrical schematic diagram
Among the figure: 1.N pole plate, 2.O pole plate, 3.P pole plate, 4. output pole plate U, 5. connecting plate; 6. output pole plate W 7. exports pole plate V, 8. input P pole plate, 9. input pole plate R0,10. input pole plate S0; 11. input pole plate T0,12. electric capacity binding posts, 13. conductive holes, 14. conductive holes; 15. the preliminary filling binding post, 16. preliminary filling binding posts, 100. rectifier bridge busbars, 200. insulated gate bipolar transistor busbars.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described further.
Referring to accompanying drawing, the utility model laminated bus bar comprises rectifier bridge busbar 100 and insulated gate bipolar transistor busbar 200.
Three layers of busbar of rectifier bridge busbar 100 are top layer N pole plate 1, middle level input pole plate R0 (9), input pole plate S0 (10), input pole plate T0 (11) and bottom input P pole plate 8.Three layers of mutual part lamination of busbar, middle bonding insulating barrier is provided with electric capacity binding post 12, the location and the conductive hole 14 that preliminary filling binding post 15 are arranged on the P pole plate 8 and be provided with according to the rectifier bridge hole site on N pole plate 1 and P pole plate 8.Rectifier bridge busbar 100 outer surfaces are encapsulated by insulating barrier.
Four layers of busbar of insulated gate bipolar transistor busbar 200 are 3, four layers of insulated gate bipolar transistor connecting plate 5 of 1, two layer of O pole plate of top layer N pole plate, 2, three layers of output P pole plate.Top layer N pole plate 1 and two layers of O pole plate 2 part lamination, middle bonding insulating barrier; Two layers of O pole plate 2 and three layers of output P pole plate 3 part lamination, middle bonding insulating barrier; Three layers of output P pole plate 3 and four layers of insulated gate bipolar transistor connecting plate 5 part lamination, middle bonding insulating barrier.Export pole plate U4, output pole plate W6, output pole plate V7 and four layers of insulated gate bipolar transistor connecting plate 5 part lamination, middle bonding insulating barrier in addition at the 3rd layer.On the output P pole plate 3 preliminary filling binding post 16 is arranged, and location and conductive hole 13 are set according to the insulated gate bipolar transistor hole site.Insulated gate bipolar transistor busbar 200 outer surfaces are encapsulated by insulating barrier.
Three layers of busbar of rectifier bridge busbar 100, four layers of busbar cross section of insulated gate bipolar transistor busbar 200 are flat cross section, can reduce stray inductance.
The employed insulating barrier of the utility model laminated bus bar adopts two two-sided gum PET films that base material is the thick 30 μ m of 0.188mm, single face glue.The selection of insulating material and busbar voltage, the number of plies, spacing are relevant, and dielectric film can prevent the mutual starting the arc of busbar end face.
The utility model laminated bus bar, the input pole plate R0 of rectifier bridge busbar 100, S0, T0 link to each other with input terminal, and inside links to each other through location and conductive hole 14 with the diode input, and diode output links to each other with P pole plate 8 or N pole plate 1; The preliminary filling contactor is connected on the preliminary filling binding post 15, and electric capacity is installed on the electric capacity binding post 12, its whole commutating circuit that forms.
The P pole plate of insulated gate bipolar transistor busbar 200, O pole plate and N pole plate are connected with the filtering link through top terminal; An inverter circuit uses three insulated gate bipolar transistors, comprises S1 insulated gate bipolar transistor, S2 insulated gate bipolar transistor and S3 insulated gate bipolar transistor.During use, the C level links to each other with the P pole plate through location and conductive hole 14 on the S1 insulated gate bipolar transistor, and the E level links to each other with the O pole plate through location and conductive hole 14, adds noninductive electric capacity therebetween; The C level links to each other with the O pole plate through location and conductive hole 14 on the S2 insulated gate bipolar transistor, and the E level links to each other with the N pole plate through location and conductive hole 14, adds noninductive electric capacity therebetween; The C level links to each other through E1/C2 on insulated gate bipolar transistor connecting plate and the S1 insulated gate bipolar transistor on the S3 insulated gate bipolar transistor; E1/C2 links to each other on the logical insulated gate bipolar transistor connecting plate of E level and the S2 insulated gate bipolar transistor; Be connected resistance R through location and conductive hole 14 between C level and the E level; E1/C2 is connected with output pole plate U through location and conductive hole 14 on the S3 insulated gate bipolar transistor, and output pole plate U binding post connects output.
When main circuit connects, input is connected on three terminals of R0, S0, T0 of laminated bus bar input pole plate, is rectified to being electrically connected between the inversion and connects, through connecting plate P, O, terminal is connected with the filtering link above the N through busbar; Guide to lead-out terminal through output pole plate U, V, W.With the three-level converter is example, and concrete method of attachment is following:
Referring to Fig. 4.Rectifying part links to each other with input terminal at the outside input of laminated bus bar pole plate R0, S0, T0, and inside links to each other through location and conductive hole with the diode input, and diode output links to each other with input P pole plate or N pole plate respectively through location and conductive hole.The wiring of preliminary filling contactor is linked on the preliminary filling binding post, and electric capacity is installed on the electric capacity binding post, forms commutating circuit.
Referring to Fig. 5.Connecting plate P, O are partly passed through in inversion, terminal is connected with the filtering link above the N; The C level links to each other with output P pole plate through location and conductive hole on the S1 IGBT, and the E level links to each other with the O pole plate through location and conductive hole, adds noninductive electric capacity therebetween; The C level links to each other with the O pole plate through location and conductive hole on the S2 IGBT; The E level links to each other with the N pole plate through location and conductive hole, adds noninductive electric capacity therebetween, and the C level passes through that E1/C2 links to each other on IGBT connecting plate and the S1 IGBT on the S3 IGBT; E1/C2 links to each other on the logical IGBT connecting plate of E level and the S2 IGBT; Is connected resistance through location and conductive hole between C level and the E level, E1/C2 is connected with output pole plate U through location and conductive hole S3 IGBT on, exports by exporting the connection of pole plate U upper connecting terminal.
It should be noted that the foregoing description is example and unrestricted the present invention, those skilled in the art can design a lot of alternate embodiments and not break away from the claim scope of this patent.
Claims (3)
1. a laminated bus bar comprises rectifier bridge busbar (100), insulated gate bipolar transistor busbar (200), it is characterized in that:
Said rectifier bridge busbar (100) comprises three layers of busbar: top layer N pole plate (1), middle level input pole plate R0 (9), input pole plate S0 (10), input pole plate T0 (11) and bottom input P pole plate (8); Three layers of mutual part lamination of busbar; Middle bonding insulating barrier; On N pole plate (1) and P pole plate (8), be provided with electric capacity binding post (12); The location and the conductive hole (14) that preliminary filling binding post (15) are arranged on the P pole plate (8) and be provided with according to the rectifier bridge hole site, said rectifier bridge busbar (100) outer surface is encapsulated by insulating barrier;
Said insulated gate bipolar transistor busbar (200) comprises four layers of busbar: top layer N pole plate (1), two layers of O pole plate (2), three layers of output P pole plate (3), four layers of insulated gate bipolar transistor connecting plate (5); Top layer N pole plate (1) and two layers of O pole plate (2) part lamination; Middle bonding insulating barrier, two layers of O pole plate (2) and three layers of output P pole plate (3) part lamination, middle bonding insulating barrier; Three layers of output P pole plate (3) and four layers of insulated gate bipolar transistor connecting plate (5) part lamination, middle bonding insulating barrier; Export pole plate U (4), output pole plate W (6), output pole plate V (7) and four layers of insulated gate bipolar transistor connecting plate (5) part lamination in addition at the 3rd layer; Middle bonding insulating barrier; Preliminary filling binding post (16) is arranged on the output P pole plate (3) and according to the insulated gate bipolar transistor hole site location and conductive hole (13) are set, said insulated gate bipolar transistor busbar (200) outer surface is encapsulated by insulating barrier.
2. according to the said laminated bus bar of claim 1, it is characterized in that: the cross section of said laminated bus bar is a flat cross section.
3. according to the said laminated bus bar of claim 1, it is characterized in that: said insulating barrier adopts two two-sided gum PET films that base material is the thick 30 μ m of 0.188mm, single face glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120505020 CN202405998U (en) | 2011-12-06 | 2011-12-06 | Stacked bus bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120505020 CN202405998U (en) | 2011-12-06 | 2011-12-06 | Stacked bus bar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202405998U true CN202405998U (en) | 2012-08-29 |
Family
ID=46703614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120505020 Expired - Lifetime CN202405998U (en) | 2011-12-06 | 2011-12-06 | Stacked bus bar |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202405998U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103929114A (en) * | 2013-10-10 | 2014-07-16 | 芜湖莫森泰克汽车科技有限公司 | New energy vehicle motor controller provided with capacitor and busbar integrated module |
| US10128625B2 (en) | 2014-11-18 | 2018-11-13 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
-
2011
- 2011-12-06 CN CN 201120505020 patent/CN202405998U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103929114A (en) * | 2013-10-10 | 2014-07-16 | 芜湖莫森泰克汽车科技有限公司 | New energy vehicle motor controller provided with capacitor and busbar integrated module |
| US10128625B2 (en) | 2014-11-18 | 2018-11-13 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120829 |