CN202394978U - Structure of low-potential barrier Schottky diode - Google Patents
Structure of low-potential barrier Schottky diode Download PDFInfo
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- CN202394978U CN202394978U CN2011205346436U CN201120534643U CN202394978U CN 202394978 U CN202394978 U CN 202394978U CN 2011205346436 U CN2011205346436 U CN 2011205346436U CN 201120534643 U CN201120534643 U CN 201120534643U CN 202394978 U CN202394978 U CN 202394978U
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Abstract
The utility model discloses a structure of a low-potential barrier Schottky diode. The structure comprises a semiconductor substrate, an N-type epitaxial layer, a passivation layer and a potential barrier alloy layer, wherein the N-type epitaxial layer is located on the front of the semiconductor substrate; the passivation layer is located on the N-type epitaxial layer and is provided with an open window; and the potential barrier alloy layer is located on the N-type epitaxial layer in the open window, and the material of the potential barrier alloy layer is titanium silicide. In the structure of the low-potential barrier Schottky diode, disclosed by the utility model, the titanium silicide is used as the potential barrier alloy layer, and perferably, titanium disilicide is used as the potential barrier alloy layer so that the formed potential barrier alloy layer has good technical stability, and the requirement for the surface state of the epitaxial layer in the open window is reduced; and compared with the potential barrier metal layer commonly used in the prior art, a low-potential barrier Schottky diode with lower potential barrier height and lower forward voltage drop can be formed.
Description
Technical field
The utility model relates to a kind of semi-conductor discrete device, relates in particular to a kind of structure of low barrier Schottky diode.
Background technology
Schottky diode is to contact the diode that forms with semiconductor with metal (or metal silicide); Be called for short Schottky diode (Schottky Barrier Diode); Have the advantages that forward voltage drop is low, reverse recovery time is very short. because the storage effect of minority carrier is very little in the Schottky diode; So its frequency sound is merely the restriction of RC time constant, thereby it is the desirable device of high frequency and high-speed switch.Its operating frequency can reach 100GHz.
For diode, forward power consumption PF=IF * VF is maximum to the contribution of overall power consumption.Because diode current (IF) is predetermined by application, therefore wanting to reduce power consumption can only try every possible means to reduce forward voltage drop (VF).For the Schottky diode of silicon epitaxy process, forward voltage drop VF depends on potential barrier alloy-layer, extension condition (for example epitaxial thickness and electrical resistivity of epitaxy) and the active region area of use.The optimization space of extension condition is comparatively limited for the Schottky diode of specific standard, and reduces forward voltage drop VF and device miniaturization requirement conflict mutually through increasing active area, and can improve diode capacitance, thereby increases circuit loss.What also need consider simultaneously is when forward voltage reduces, and it is big that reverse current (IR) can become.
Therefore; In the manufacturing of Schottky diode, select suitable potential barrier alloy-layer to become particularly important; Present chromium (Cr), nickel (Ni), nickel platinum (NiPt); The silicide of molybdenum metals such as (Mo) has been widely used in making the potential barrier alloy-layer of Schottky diode by most of manufactories, but the silicide barrier height of above metal can not satisfy market demands for the low barrier Schottky diode of lower forward power consumption.
Metal work function is one of the principal element that influences the barrier height of metal silicide, and is confirming under the prerequisite of process conditions, can only form metal silicide through selecting the low metal of metal work function, to reduce forward voltage drop (VF).
Table one is the work function tabulation of common metal, and shown in table one, Titanium (Ti) work function is less, and the barrier height of its silicide is lower, with titanium disilicide (TiSi
2) potential barrier is applied to the forward voltage drop (VF) that the small-signal Schottky diode reduces Schottky diode on can be largely.
Table one
| Metallic element | Work function (eV) |
| Platinum (Pt) | 5.65 |
| Nickel (Ni) | 5.15 |
| Chromium (Cr) | 4.5 |
| Titanium (Ti) | 4.33 |
In VLSI (very lagre scale integrated circuit (VLSIC)), titanium disilicide is because its low-resistance characteristic has been widely used in conduct interconnection and contactor material in the 0.35 and 0.25 micro MOS technology.In " the Titanium silicide Schottky contacts characteristic and the annealing conditions among the VLSI " of periodical " solid electronics research and progress ", having introduced makes titanium (Ti) and silicon (Si) in the short annealing boiler tube, react the titanium disilicide (TiSi that produces
2) method, and in the technology of producing once, can produce the Schottky diode that satisfies circuit requirement simultaneously, simultaneously can be with titanium nitride (TiN) or titanium nitride (TiN) and oxygen (O
2) titanium oxynitrides (TiON) that generates of reaction is as diffusion impervious layer, prevents that effectively the infiltration of metallic aluminium from forming the aluminium glut, above technology has improved processing compatibility effectively.
Yet; The difference of application scenario has determined different Schottky diodes that the requirement of technology is differed widely; In integrated circuit, the main application of titanium disilicide is as metal connecting line, and the schottky device that process compatible makes performance parameter in every respect is all relatively poor relatively; And the Schottky diode of discrete device is to the parameter specification, and reliability etc. all have higher requirements.Annealed titanium nitride or titanium oxynitrides as the diffuse metal protective layer can adsorb impurity through boiler tube high temperature in VLSI; Surface state is not good; Can influence device reliability; Should not be used as the diffusion impervious layer of the Schottky diode of discrete device, titanium oxynitrides will be a part headachy thing to the appearance of a variety of acid immunity titanium oxynitrides in the etching technics that is the master with the wet etching simultaneously, be difficult to select suitable acid liquid corrosion titanium oxynitrides.
Because the alloy process of titanium is to 10ppm (10 * 10
-6/ cm
-3) oxygen and the environment steam of magnitude is very responsive; And general nitrogen boiler tube or short annealing boiler tube can be introduced contaminations such as oxygen or steam, carry out alloy technique at the N2 of routine boiler tube, receive the influence of ambiance very big; The titanium disilicide purity that forms is not enough; Barrier height is unstable, and the barrier height repeatability of formation is bad, thereby the stability and the consistency that show as technology are poor.Therefore, as tangible difference is arranged among Schottky barrier and the VLSI, its quality requirement is strict more in discrete device for titanium disilicide, can not produce high performance Schottky diode through existing method.
Schottky diode as discrete device is much higher to the requirement of potential barrier high stability, so more strict to the formation technological requirement of potential barrier alloy-layer.
The utility model content
The purpose of the utility model provides a kind of structure that can keep the low barrier Schottky diode of the stable high-performance of barrier height.
For addressing the above problem, the utility model provides a kind of structure of low barrier Schottky diode, comprising:
Semiconductor substrate;
N type epitaxial loayer is positioned at the front of said Semiconductor substrate;
Passivation layer is positioned on the said N type epitaxial loayer, and said passivation layer has windows;
The potential barrier alloy-layer is arranged on the said N type epitaxial loayer of windowing, and the material of said potential barrier alloy-layer is the silicide of titanium.
Further, the structure of low barrier Schottky diode comprises that also the front metal electrode is positioned on the said potential barrier alloy-layer; The back metal electrode is positioned at the back side of said Semiconductor substrate.
Further, also be formed with P type guard ring in the said N type epitaxial loayer, said P type guard ring is around said windowing.
Further, the material of said potential barrier alloy-layer is a titanium disilicide.
Further, the thickness of said potential barrier alloy-layer is 1000～5000 dusts.
Further, the material of said passivation layer is a silicon dioxide.
Further, the thickness of said Semiconductor substrate is 100um～300um.
The said low barrier Schottky diode structure of the utility model; With the silicide of titanium as the potential barrier alloy-layer; Wherein preferred titanium disilicide makes the potential barrier alloy-layer of formation have good technology stability, has reduced the requirement to the epi-layer surface attitude in windowing; And barrier metal layer commonly used in the prior art can form lower barrier height, low barrier Schottky diode that forward voltage drop is lower.
Description of drawings
Fig. 1 is the structural representation of low barrier Schottky diode among the utility model one embodiment.
Fig. 2～Fig. 6 is the structural representation of the manufacturing process of low barrier Schottky diode among the utility model one embodiment.
Fig. 7 is the schematic flow sheet of the manufacture method of the structure of low barrier Schottky diode among the utility model one embodiment.
Embodiment
For the content that makes the utility model is clear more understandable,, the content of the utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in the protection range of the utility model.
Secondly, the utility model utilizes sketch map to carry out detailed statement, and when the utility model instance was detailed, for the ease of explanation, sketch map did not amplify according to general ratio is local, should be with this as the qualification to the utility model.
Fig. 1 is the structural representation of low barrier Schottky diode among the utility model one embodiment.As shown in Figure 1, the utility model provides a kind of structure of low barrier Schottky diode, comprises Semiconductor substrate 100; N type epitaxial loayer 102 is positioned at the front of said Semiconductor substrate 100; Passivation layer 106 is positioned on the said N type epitaxial loayer 102, and said passivation layer 106 has windows; Potential barrier alloy-layer 112; Be arranged on the said N type epitaxial loayer 102 of windowing, the material of said potential barrier alloy-layer 112 is the silicide of titanium, and is wherein preferable; The material of said potential barrier alloy-layer 112 is a titanium disilicide, and the thickness of said potential barrier alloy-layer is 1000～5000 dusts.The silicide of selection titanium can have the barrier height that has good stability as the material of barrier metal layer 112, effectively reduces the forward voltage drop of the said low barrier Schottky diode of the utility model, and then has reduced device forward power consumption effectively.Through test comparison, the said low barrier Schottky diode of the utility model, its barrier height even be starkly lower than the barrier height of the barrier Schottky diode of the lower evanohm of the more barrier height of present use.
In addition, the structure of low barrier Schottky diode comprises that also front metal electrode 116 is positioned on the said potential barrier alloy-layer 112; Back metal electrode 114 is positioned at the back side of said Semiconductor substrate 100.The electrode that said front metal electrode 116 and said back metal electrode 114 are used for low barrier Schottky diode leads to potential barrier alloy-layer 112 when protection is provided, and satisfies package requirements; Wherein, said front metal electrode 116 by Semiconductor substrate upwards successively titanium barrier layer, nickel dam and silver electrode draw layer, said back metal electrode 114 comprises successively downwards that by Semiconductor substrate titanium barrier layer, nickel dam and silver electrode draw layer.
In addition; Semiconductor substrate 100 is blocked up can introduce bigger series resistance, and influence thermal diffusivity, so with the thinning back side of said Semiconductor substrate 100; Thickness thinning confirms that according to the demand of packaging technology the thickness range of general Semiconductor substrate 100 is 100um～300um.
Also be formed with P type guard ring 104 in the said N type epitaxial loayer 102, said P type guard ring 104 is around said windowing, in the form of a ring.The material of said passivation layer can be silicon dioxide, and material is common and can form good dielectric properties.
The said low barrier Schottky diode structure of the utility model; With the silicide of titanium as the potential barrier alloy-layer; Wherein preferred titanium disilicide makes the potential barrier alloy-layer of formation have good technology stability, has reduced the requirement to the epi-layer surface attitude in windowing; And barrier metal layer commonly used in the prior art can form lower barrier height, low barrier Schottky diode that forward voltage drop is lower.
Fig. 7 is the schematic flow sheet of the manufacture method of low barrier Schottky diode among the utility model one embodiment.Fig. 2～Fig. 6 is the structural representation of the manufacturing process of low barrier Schottky diode among the utility model one embodiment.Below in conjunction with Fig. 2～Fig. 7, the manufacture method of the structure of the said low barrier Schottky diode of the utility model is described.
Step S01: Semiconductor substrate is provided, is formed with N type epitaxial loayer on the front of said Semiconductor substrate and is positioned at the passivation layer of windowing that has on the said N type epitaxial loayer.
As shown in Figure 2; In step S01; Semi-conductive substrate 100 is provided; Said Semiconductor substrate 100 can be semiconductor material 100 such as monocrystalline silicon, polysilicon or germanium silicon compound, and said Semiconductor substrate 100 is the Semiconductor substrate 100 of low-resistivity, on this Semiconductor substrate 100, forms the N type epitaxial loayer 102 with high resistivity; Then; On N type epitaxial loayer 102, form passivation layer 106, said passivation layer 106 preferable materials are silicon dioxide, on said passivation layer 106, form the photoresist (not indicating among the figure) of patterning afterwards; Photoresist with this patterning is a mask; The said passivation layer 106 of etching windows 200 thereby in passivation layer, form, this expose portion N type epitaxial loayer 102 in 200 of windowing; In addition, window after 200, carry out that P type dopant ion injects and annealing process, thereby in the N type epitaxial loayer 102 of windowing around 200, form P type guard ring 104 in formation., this will form the potential barrier alloy-layer on windowing N type epitaxial loayer in 200.
In this embodiment; " low " and " height of said " low-resistivity " and " high resistivity " " be between the resistivity of Semiconductor substrate and N type epitaxial loayer comparatively speaking; Semiconductor substrate as discrete device; Its resistivity is less usually when dispatching from the factory, and for example is lower than the resistivity of the resistivity of the N type epitaxial loayer that 0.005 Ω .cm forms on Semiconductor substrate thereafter greater than Semiconductor substrate, and the concrete device parameters according to low barrier Schottky diode of its resistivity is confirmed.
Before carrying out step S02; Also comprise cleaning step; Cleaning step is used to remove the pollution impurity on said N type epitaxial loayer 102 and said passivation layer 106 surfaces; Guaranteed before barrier metal layer forms, the good cleanliness factor in N type epitaxial loayer 102 surfaces, avoided staiing on the Semiconductor substrate and autoxidation etc. influences follow-up alloy.
Step S02 covers barrier metal layer on N type epitaxial loayer in said windowing and the passivation layer, and the material of said barrier metal layer is a titanium.
In step S02; On said N type epitaxial loayer 102 and passivation layer 106 of windowing in 200, cover barrier metal layer 108, form structure as shown in Figure 3, the material of said barrier metal layer 108 is a titanium; Can adopt the method for sputter to form; Sputter procedure forming said barrier metal layer 108 is accomplished in the sputter cavity, and Titanium gets in the sputter cavity with atomic form, is deposited on the N type epitaxial loayer 102 and passivation layer 106 in said the windowing; Sputtering power is 0.5～2KW, and environment vacuum degree is less than 1 * e
-7Torr; Can further reduce in the environment impurity such as steam under this vacuum degree condition to the influence of barrier metal layer 108 purity; Ambient temperature is chosen in 250～350 ℃, and this ambient temperature can make the impurity such as some steam of Semiconductor substrate 100 surface adsorption vapor away.The said barrier metal layer 108 preferable thickness that form are 500～1500 dusts, can be at the potential barrier alloy-layer of follow-up formation adequate thickness.
Step S03: on said barrier metal layer, cover coat of metal.
As shown in Figure 4, in step S03, on said barrier metal layer 108, cover coat of metal 110, the material of said coat of metal 110 is a titanium nitride; Said coat of metal 110 can adopt the method for sputter to form, and in the sputter procedure that forms said coat of metal, in sputtering equipment, sneaks into an amount of nitrogen, forms titanium nitride through reactive sputtering, is deposited on the said barrier metal layer 108; Sputtering power is 4～8KW, and the barrier height influence of 110 pairs of potential barrier alloy-layers of coat of metal is very little, therefore suitably improves sputtering power and (generally 4～8KW), shortens sputtering time, thereby enhance productivity; Environment vacuum degree is less than 1 * e
-7Torr can further reduce the influence of impurity such as steam in the environment under this vacuum degree condition, ambient temperature is 250～350 ℃, and the molal quantity ratio of said titanium and nitrogen is 0.5～2.Said coat of metal 110 preferable thickness are 500～1500 dusts, can intercept effectively in airborne steam, the oxygen entering barrier metal layer 108, influence alloy.
It is relatively stable to have a high temperature properties as the titanium nitride of coat of metal 110 materials; Titaniums difficult and as barrier metal layer 108 materials react; And titanium nitride and titanium can be easy to remove simultaneously in subsequent technique; Not only intercepted contacting of oxygen, steam in titanium and the environment of barrier metal layer 108 in the heating alloy process, reduced pollution, and guaranteed the quality of potential barrier alloy-layer 108 and heated the stability of alloy technique.
Said barrier metal layer 108 can form in same sputtering equipment with said coat of metal 110; After forming barrier metal layer 108, needn't from sputtering equipment, take out; Continue sputter in another chamber of sputtering equipment and form coat of metal 110 but directly get into; Thereby in same sputtering equipment, form successively, can reduce the pollution impurity that external environment is introduced, and enhance productivity.
Step S04: heat alloy technique, make the N type epitaxial loayer generation alloy reaction in said barrier metal layer and said the windowing, to form the potential barrier alloy-layer.
As shown in Figure 5; In step S04, heat alloy technique, in said N type epitaxial loayer 102 of windowing in 200, to form potential barrier alloy-layer 112; The material of potential barrier alloy-layer 112 is the silicide of titanium; Preferable titanium disilicide forms the preferable thickness range of potential barrier alloy-layer 112 at 1000～5000 dusts, can have good barrier height; In the heating alloy technique; Pasc reaction in part barrier metal layer 108 and the N type epitaxial loayer 102 forms potential barrier alloy-layer 112; Wherein preferable formation method is the boiler tube heating, and the preferable scope of heating-up temperature is 580～650 ℃, can guarantee that in this temperature sufficiently high temperature makes titanium and pasc reaction form potential barrier alloy-layer 112; And avoided too high temperature to make the titanium nitride of coat of metal 110 participate in reaction, thereby formed the potential barrier alloy-layer 112 that has good stability of barrier height.Titanium disilicide can effectively reduce the forward voltage drop of the said low barrier Schottky diode of the utility model as the material of potential barrier alloy-layer 112, has reduced device forward power consumption effectively.If the heating-up temperature of boiler tube is improper or boiler tube in oxygen and steam when participating in reaction, can form the silicide of multiple titanium, the barrier height when its barrier height will be higher than simple titanium disilicide as the potential barrier alloy-layer.Through test comparison, the low barrier Schottky diode that manufacture method described in the present embodiment forms, its barrier height even be starkly lower than the barrier height of the barrier Schottky diode of the lower evanohm of the more barrier height of present use.
Step S05: remove remaining barrier metal layer and said coat of metal.
In step S05, the remaining barrier metal layer 108 of removing said coat of metal 110 and not participating in alloy reaction forms structure as shown in Figure 6.In preferred embodiment; Adopt wet etching to remove said coat of metal 110 and remaining barrier metal layer 108; Wherein etching liquid comprises the mixed liquor of ammoniacal liquor and hydrogen peroxide solution; The etching liquid selective comprises that the mixed liquor of ammoniacal liquor and hydrogen peroxide solution can have higher etching selection ratio with respect to titanium disilicide, silicon and silicon dioxide to titanium nitride and titanium, thereby when can thoroughly remove coat of metal 110 and barrier metal layer 108, hardly potential barrier alloy-layer 112 is constituted influence.
In addition, the preferable temperature of said etching liquid is influential to etching speed and effect, and temperature is crossed and lowly can be made etch rate slow excessively; Yet temperature is too high then can speed too fast, simultaneously ammoniacal liquor fast volatilization cause the corrosive liquid ratio to change greatly wayward etching effect; Therefore the preferable temperature of said etching liquid is 40-60 ℃, and wherein best is 55 ℃, can be when improving etch rate; Control etching effect well, process rate and quality are provided.
Step S06: on said potential barrier alloy-layer, form the front metal electrode; Thinning back side with said Semiconductor substrate; The back side in said Semiconductor substrate forms the back metal electrode.
In conjunction with Fig. 1; In step S06; On said potential barrier alloy-layer 112, form the front metal electrode, the general method of evaporation that adopts forms, and the structure of front metal electrode 116 is generally titanium nickeline or titanium nickel aluminium; The front metal electrode comprises successively upwards that from Semiconductor substrate 100 titanium barrier layer, nickel dam and silver electrode draw layer, or comprise titanium barrier layer successively, nickel dam and aluminium electrode draw layer; Backplate metal 114 comprises successively downwards that by Semiconductor substrate 100 titanium barrier layer, nickel dam and silver electrode draw layer; Front metal electrode 116 and back metal electrode are that potential barrier alloy-layer 112 is when providing protection; Satisfy package requirements, accomplish the making of front metal electrode 116 then through photoetching and etching technics; Semiconductor substrate is blocked up can introduce bigger series resistance, and influences thermal diffusivity, and therefore at first with the thinning back side of said Semiconductor substrate, thickness thinning confirms that according to the demand of packaging technology general thickness range is 100um～300um; Form the back metal electrode at the back side of said Semiconductor substrate then, can adopt the method for evaporation to form equally.Thereby form complete Schottky diode as shown in Figure 7.
Though the utility model discloses as above with preferred embodiment; Right its is not in order to limit the utility model; Has common knowledge the knowledgeable in the technical field under any; In spirit that does not break away from the utility model and scope, when can doing a little change and retouching, so the protection range of the utility model is as the criterion when looking claims person of defining.
In addition, during the environment vacuum degree in this embodiment, mentioned, its unit is Torr (holder), 1Torr=133.32 Pascal.Low-resistivity mainly refers to the resistance substrate rate, and we use always is generally less than 0.005 Ω .cm, and high resistivity is for low-resistivity, mainly refers to the resistivity of N type epitaxial loayer, and the resistivity of N type epitaxial loayer is mainly by the device parameters decision that is designed.
Claims (7)
1. the structure of a low barrier Schottky diode is characterized in that, comprises
Semiconductor substrate;
N type epitaxial loayer is positioned at the front of said Semiconductor substrate;
Passivation layer is positioned on the said N type epitaxial loayer, and said passivation layer has windows;
The potential barrier alloy-layer is arranged on the said N type epitaxial loayer of windowing, and the material of said potential barrier alloy-layer is the silicide of titanium.
2. the structure of low barrier Schottky diode as claimed in claim 1 is characterized in that, also comprise,
The front metal electrode is positioned on the said potential barrier alloy-layer;
The back metal electrode is positioned at the back side of said Semiconductor substrate.
3. the structure of low barrier Schottky diode as claimed in claim 1 is characterized in that, also is formed with P type guard ring in the said N type epitaxial loayer, and said P type guard ring is around said windowing.
4. the structure of low barrier Schottky diode as claimed in claim 1 is characterized in that, the material of said potential barrier alloy-layer is a titanium disilicide.
5. the structure of low barrier Schottky diode as claimed in claim 1 is characterized in that, the thickness of said potential barrier alloy-layer is 1000～5000 dusts.
6. like the structure of any described low barrier Schottky diode in the claim 1 to 5, it is characterized in that the material of said passivation layer is a silicon dioxide.
7. like the structure of any described low barrier Schottky diode in the claim 1 to 5, it is characterized in that the thickness of said Semiconductor substrate is 100um～300um.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011205346436U CN202394978U (en) | 2011-12-19 | 2011-12-19 | Structure of low-potential barrier Schottky diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496571A (en) * | 2011-12-19 | 2012-06-13 | 杭州士兰集成电路有限公司 | Method and structure for manufacturing low barrier Schottky diode |
| CN104813451A (en) * | 2012-11-28 | 2015-07-29 | 富士胶片株式会社 | Method for etching semiconductor substrate and method for manufacturing semiconductor device |
-
2011
- 2011-12-19 CN CN2011205346436U patent/CN202394978U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496571A (en) * | 2011-12-19 | 2012-06-13 | 杭州士兰集成电路有限公司 | Method and structure for manufacturing low barrier Schottky diode |
| CN104813451A (en) * | 2012-11-28 | 2015-07-29 | 富士胶片株式会社 | Method for etching semiconductor substrate and method for manufacturing semiconductor device |
| US9514958B2 (en) | 2012-11-28 | 2016-12-06 | Fujifilm Corporation | Etching method of semiconductor substrate, and method of producing semiconductor device |
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