CN202334935U - Heating device for junction temperature testing of semiconductor device - Google Patents
Heating device for junction temperature testing of semiconductor device Download PDFInfo
- Publication number
- CN202334935U CN202334935U CN2011205015132U CN201120501513U CN202334935U CN 202334935 U CN202334935 U CN 202334935U CN 2011205015132 U CN2011205015132 U CN 2011205015132U CN 201120501513 U CN201120501513 U CN 201120501513U CN 202334935 U CN202334935 U CN 202334935U
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- Prior art keywords
- electric heating
- heating body
- semiconductor device
- heating
- temperature
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Abstract
The utility model relates to heating equipment for junction temperature of a semiconductor device, in particular to a heating device for junction temperature testing of a semiconductor device. The heating device comprises a heat-conducting heating panel, an upper cover, an electric heating body component and a pedestal, wherein the electric heating body component is fixedly arranged between the pedestal and the upper cover; the heating panel is fixedly arranged on the upper cover; the lower end of the heating panel corresponds to the position of the electric heating body component with the upper cover between the heating panel and the electric heating body component; the electric heating body component comprises an electric heating body and an electric heating body shell; the electric heating body is arranged and fixed in the electric heating body shell in an embedded mode; and screws for fixing a semiconductor device are arranged on the heating panel. According to the heating device, junction temperature heating can be simultaneously performed on a plurality of semiconductor devices; the entire semiconductor device junction temperature heating test time is shorter; the temperature rise of each semiconductor device on the heating panel is more uniform; the temperature difference between the semiconductor devices is low; the temperature of the surface of the electric heating body is monitored through the control module; the heating safety is high; and the system reliability is high.
Description
Technical field
The utility model relates to the firing equipment of semiconductor device junction temperature, especially a kind of heater of semiconductor device junction temperature test.
Background technology
Existing semiconductor device working junction temperature requires to be divided into 25 ℃, 80 ℃, 100 ℃, 125 ℃ four kinds.In order to guarantee that semiconductor device can normally use under the different temperatures environment, the mode that adopts usually is that semiconductor device is heated to reach different junction temperature conditions.The heating means of at present common semiconductor device junction temperature have following two kinds: a kind of is the surface that heating plate directly is affixed on semiconductor device, and through high-power resistance heating thermal conductive metal plate, thermal conductive metal plate is the surface of heat conduction to semiconductor device again; Another kind is to adopt the mode of baking oven thermal radiation heat radiation to heat semiconductor device.
But all there is different defects separately in these two kinds of methods: first method, can only heat a semiconductor device during heating, and, a semiconductor device heating could heat after accomplishing next semiconductor device.This heating technique is the man-to-man mode of heating that adopts to semiconductor device, and heats is preferably arranged, but it is oversize to accomplish heating time of a plurality of semiconductor device junction temperatures, wastes time and energy; Second method; Putting semiconductor device into baking oven heats up; After the temperature of semiconductor device in the baking oven reaches design temperature; Need semiconductor device be taken out from baking oven and just can carry out the coherent detection measurement, therefore this mode can't accurately monitor the operating position of specifying under the junction temperature temperature conditions, certainly will certain influence be arranged to detecting measurement result.
The utility model content
The utility model is for solving the problems of the technologies described above, and a kind of heater of semiconductor device junction temperature test is provided, homogeneous heating not only, and do not influence the detection of semiconductor device under different junction temperature conditions and measure.
The technical scheme of the utility model is following:
A kind of heater of semiconductor device junction temperature test; It is characterized in that: the heating panel, loam cake, electric heating body assembly, the base that comprise heat conduction; Fixed installation electric heating body assembly between said base and the loam cake; Fixed installation heating panel above the loam cake, the lower end of said heating panel is corresponding with the electric heating body module position across loam cake; Said electric heating body assembly comprises electric heating body and electric heating body shell, and electric heating body is embedded to be mounted in the electric heating body shell; Be provided with the screw of stationary semiconductor devices above the said heating panel.
Preferably, said electric heating body assembly is a ptc heater, and ptc heater comprises shell and be fixed in the PTC element in the shell, this shell through screw in heating panel below.
Preferably, said heating panel is the aluminum metal plate.
Said heater also is provided with control module, is used to monitor the temperature of electric heating body assembly surface.
Compared with prior art, the utility model has the advantages that:
(1) the utility model can carry out the junction temperature heating to a plurality of semiconductor device simultaneously, and therefore, entire semiconductor device junction temperature heat run only needs the short time;
(2) the utility model utilizes electric heating body to the heating of heating panel, transfers heat to semiconductor device again through the heating panel, and therefore, each semiconductor device temperature rise ratio is more even on the heating panel, and the temperature difference is less between semiconductor device;
(3) the utility model promptly stops heating through the temperature on control module monitoring electric heating body surface when temperature is higher than desired temperature, avoids temperature too high, and system reliability is high.
Description of drawings
Fig. 1 is the theory diagram of the utility model
Fig. 2 is the structural representation of the utility model
Fig. 3 is the schematic appearance of the utility model
Wherein, description of reference numerals: 1 base, 2 loam cakes, 3 mains switches, 4 electric heating bodies, 5 electric heating body shells, 6 heating panels, the screw of 7 stationary semiconductor devices, 8 control modules.
Embodiment
As shown in Figure 2; A kind of heater of semiconductor device junction temperature test; The heating panel 6, loam cake 2, electric heating body assembly, the base 1 that comprise heat conduction; Fixed installation electric heating body assembly between said base 1 and the loam cake 2, fixed installation heating panel 6 above the loam cake 2, the lower end of said heating panel 6 is corresponding with the electric heating body module position across loam cake 2; Said electric heating body assembly comprises electric heating body 4 and electric heating body shell 5, electric heating body 4 embedded being mounted in the electric heating body shell 5; Be provided with the screw 7 of stationary semiconductor devices above the said heating panel 6.
Preferably, said electric heating body assembly is a ptc heater, and ptc heater comprises shell and be fixed in the PTC element in the shell that this shell is fixed in heating panel 6 belows through screw 7.With the PTC element is thermal source, because the characteristic of the positive temperature coefficient of PTC element, its resistance is little at low temperatures, power consumption is big, and along with the rising of temperature, resistance value sharply increases, and it is very little that power consumption becomes, and is well suited for using heating occasion at low temperatures.Further, electric heating body 4 can also be other the electrically heated heater that passes through except adopting ptc heater.
Preferably, said heating panel 6 is the aluminum metal plate.
Said heater also is provided with control module 8, is used to monitor the temperature of electric heating body assembly surface.
The utility model reaches the purpose that heats semiconductor device through heating panel 6, and therefore, system's temperature rise is even, and the temperature difference is very little between semiconductor device, and heating is very reliable.The electric heating body assembly can be heated to design temperature with semiconductor device when temperature does not reach desired temperature, electric heating body 4 is closed when the semiconductor device surface temperature reaches desired temperature.
As shown in Figure 1, be the theory diagram of the utility model, this heater comprises power module, control module 8, mains switch 3 and heating module.Power module directly uses plug to connect civil power; Control module 8 is used to monitor the temperature on electric heating body surface, when this temperature during less than desired temperature, opens said electric heating body; When this temperature during greater than desired temperature; Close said electric heating body, not only can prevent to heat always and cause the semiconductor device temperature too high, can also energy savings.
In the practical application, require to set desired temperature in the control module 8, and the semiconductor device that will heat is fixed on the heating panel 6 through hold-down screw 7 according to working junction temperature, for example, once can be simultaneously fixing 26PCS semiconductor device.When control module 8 detected electric heating body shell 5 temperature and is lower than desired temperature, electric heating body 4 began heating; When being heated to a certain degree, when the temperature of semiconductor device surface temperature and electric heating body shell 5 surpasses desired temperature, control module 8 power cutoff switches 3, electric heating body 4 quits work.
More than be merely the specific embodiment of the utility model, do not limit the protection range of the utility model with this; Do not violate any replacement and the improvement of being done on the basis of the utility model design, all belonging to the protection range of the utility model.
Claims (4)
1. the heater of semiconductor device junction temperature test; It is characterized in that: the heating panel (6), loam cake (2), electric heating body assembly, the base (1) that comprise heat conduction; Fixed installation electric heating body assembly between said base (1) and the loam cake (2); Fixed installation heating panel (6) above the loam cake (2), the lower end of said heating panel (6) is corresponding with the electric heating body module position across loam cake (2); Said electric heating body assembly comprises electric heating body (4) and electric heating body shell (5), and electric heating body (4) is embedded to be mounted in the electric heating body shell (5); Be provided with the screw (7) of stationary semiconductor devices above the said heating panel (6).
2. heater according to claim 1 is characterized in that: said electric heating body assembly is a ptc heater, and ptc heater comprises shell and be fixed in the PTC element in the shell that this shell is fixed in heating panel (6) below through screw (7).
3. heater according to claim 1 and 2 is characterized in that: said heating panel (6) is the aluminum metal plate.
4. heater according to claim 3 is characterized in that: said heater also is provided with and is used to monitor electric heating body assembly surface temperature controlling module (8).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205015132U CN202334935U (en) | 2011-12-06 | 2011-12-06 | Heating device for junction temperature testing of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011205015132U CN202334935U (en) | 2011-12-06 | 2011-12-06 | Heating device for junction temperature testing of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202334935U true CN202334935U (en) | 2012-07-11 |
Family
ID=46446897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011205015132U Expired - Fee Related CN202334935U (en) | 2011-12-06 | 2011-12-06 | Heating device for junction temperature testing of semiconductor device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202334935U (en) |
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2011
- 2011-12-06 CN CN2011205015132U patent/CN202334935U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20141206 |
|
EXPY | Termination of patent right or utility model |