CN202297766U

CN202297766U - Embedded PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon wafer carrier

Info

Publication number: CN202297766U
Application number: CN2011204255798U
Authority: CN
Inventors: 尤耀明; 代宁; 李文虎
Original assignee: WUXI GREENWAVE NEW ENERGY EQUIPMENT CO Ltd
Current assignee: WUXI GREENWAVE NEW ENERGY EQUIPMENT CO Ltd
Priority date: 2011-10-31
Filing date: 2011-10-31
Publication date: 2012-07-04
Anticipated expiration: 2021-10-31

Abstract

The utility model relates to a silicon wafer carrier, in particular to an embedded PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon wafer carrier, belonging to the technical field of solar battery film coating. The embedded PECVD silicon wafer carrier compare a square frame, the side length of the frame is equal to the side length of a silicon wafer carrier device of the first specification, one face of the frame is a first square, the other face of the frame is a second square, and the first square and the second square form a step in height. The size of the first square is larger than the size of a silicon wafer to be processed and the four corners of the first square are all processed into process fillets; and the second square is a hollowed square. According to the utility model, a hanger installed on the silicon wafer carrier device in the case of a down film coating mode is omitted; an up film coating mode is adopted, process gas directly produces sediments on the upper surface of the silicon wafer, and therefore film coating flaws generated because the hander blocks the silicon wafer in the case of the down film coating mode can be avoided, the appearance of the silicon wafer is improved and the conversion efficiency of the silicon wafer is improved. The embedded PECVD silicon wafer carrier has good processability and is convenient to maintain; and for users, the product maintenance cost is reduced.

Description

Embedded PECVD slide glass device

Technical field

The utility model relates to a kind of slide glass device, and specifically a kind of embedded PECVD slide glass device belongs to solar cell coating technique field.

Background technology

To great attention, as far back as during the Seventh Five-Year Plan period, national key subjects have been listed in the research work of amorphous silicon semiconductor in to the research and development one of solar cell in China; 85 and during the State's Ninth Five-Year Plan period, China focuses on aspect such as solar energy in large area battery to research and development.In October, 2003; National Development and Reform Committee, the Department of Science and Technology make the evolutionary operation(EVOP) of the five-year solar energy resources; Committee of Development and Reform's " bright engineering " 10,000,000,000 yuan of application that are used to advance solar energy generation technology of will raising funds are planned national solar power system total installation of generating capacity in 2015 and are reached 300 megawatts.China has become the maximum manufacturing nation of global photovoltaic product, and China is about to " the new forms of energy development planning " of appearance, and the installed capacity of China's photovoltaic generation is planned to the year two thousand twenty and reaches 20GW, is more than 10 times of original " renewable energy source medium-term and long-term plans " middle 1.8GW.

Present domestic solar power silicon manufacturing enterprise mainly contains manufacturers such as Luoyang Monocrystalline Silicon Factory, silicon single crystal base, Ningjin, Hebei and Sichuan high eyebrow semiconductor material factory; Wherein silicon single crystal base in Ningjin, Hebei is solar monocrystalline silicon production base the biggest in the world, accounts for about 25% of world's solar monocrystalline silicon market share.

Fast development along with the photovoltaic industry; People have proposed increasingly high requirement to the quality of solar battery sheet; Wherein the surface quality of silicon chip, residual contamination etc. not only influences the outward appearance of battery sheet but also influences the efficiency of conversion of solar battery sheet; The board-like PECVD of following plated film adopts at present 4 groups of hooks to support silicon chips, and the mode that 4 groups of washers block silicon chip is carried out plated film, and then this moment is when plated film; Can't made solar cell produce surface spots by plated film owing to hook and contacting of silicon chip make by the silicon chip of hook bill overlay area, the outward appearance that had so both influenced the battery sheet have also influenced the transformation efficiency of battery sheet.

Summary of the invention

The purpose of the utility model is to overcome above-mentioned weak point; A kind of embedded PECVD slide glass device is provided; Make silicon chip when plated film, avoid because of descending the plated film mode to link up with process gas being stopped the flaw that on silicon chip, forms, the outward appearance of having improved the battery sheet has also improved the transformation efficiency of battery sheet; Also save the installation of time plated film hook in addition, reduced the maintenance cost of slide glass device

According to the technical scheme that the utility model provides, embedded PECVD slide glass device comprises foursquare framework; The length of side of said framework equates with the length of side of the silicon chip carrier device of first kind of specification; Framework simultaneously is first square, and another side is second square, and both in height form step; And first square is greater than second square.

Said first square dimensions is greater than die size to be processed, and the technology fillet all is processed at its four angles.

Said second square is the hollow out square.

The utlity model has following advantage:

saved the hook that time plated film mode need be installed on the slide glass device;

Plated film mode in

employing; Process gas directly produces settling at the upper surface of silicon chip; So can not form the plated film flaw that forms, the outward appearance of having improved silicon chip, improve the transformation efficiency of silicon chip as hook in the following plated film mode blocks silicon chip;

3. the embedded slide glass device processibility that relates to is good, is convenient to safeguard, the user has also been reduced the maintenance cost of product.

Description of drawings

Fig. 1 the utility model structural representation.

Fig. 2 the utility model section of structure.

Embodiment

Shown in Fig. 1-2, embedded PECVD slide glass device comprises foursquare framework 1; The length of side of said framework 1 equates with the length of side of the silicon chip carrier device of first kind of specification; Framework 1 one side is first square 2, and another side is second square 3, and both in height form step; And first square 2 is greater than second square 3.

The size of said first square 2 is greater than die size to be processed, and the technology fillet all is processed at its four angles.

Said second square 3 is the hollow out square.

Present slide glass device is owing to adopt 4 hooks to carry silicon chip to be coated, and the slide glass device vibrations by in 4 washer restriction slide glass device moving processes prevent the silicon chip landing.Because silicon chip contacts with hook, then linking up with bill can form covering and make common process gas can't arrive the zone that this is capped silicon chip, so the battery sector-meeting forms flaw, influences outward appearance and transformation efficiency.

The embedded PECVD slide glass of the utility model device; The plated film mode is carried out plated film to silicon chip in the employing, during plated film, only needs silicon chip to be processed is put into this step groove; Process gas directly deposits the silicon chip upper surface, has avoided the flaw that hook produces the silicon chip covering in time plated film slide glass device.

Claims

1. embedded PECVD slide glass device; Comprise foursquare framework (1); It is characterized in that: the length of side of said framework (1) equates with the length of side of the silicon chip carrier device of first kind of specification; Framework (1) one side is first square (2), and another side is second square (3), and both in height form step; And first square (2) is greater than second square (3).

2. according to the said embedded PECVD slide glass device of claim 1, it is characterized in that: the size of said first square (2) is greater than die size to be processed, and the technology fillet all is processed at its four angles.

3. according to the said embedded PECVD slide glass device of claim 1, it is characterized in that: said second square (3) is the hollow out square.