CN202282333U - Silicon slice positioning structure with defects on back side and front side dotting - Google Patents
Silicon slice positioning structure with defects on back side and front side dotting Download PDFInfo
- Publication number
- CN202282333U CN202282333U CN2011203997678U CN201120399767U CN202282333U CN 202282333 U CN202282333 U CN 202282333U CN 2011203997678 U CN2011203997678 U CN 2011203997678U CN 201120399767 U CN201120399767 U CN 201120399767U CN 202282333 U CN202282333 U CN 202282333U
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- silicon chip
- back side
- scale
- laser
- front side
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Abstract
The utility model discloses a silicon slice positioning structure with defects on the back side and front side dotting, which comprises a slice box for installing silicon slices, wherein a scale is respectively arranged in four directions of the slice box, a laser positioning lamp is respectively arranged outside two adjacent scales, laser emitted by each laser positioning lamp is intersected with two scales not adjacent, and scale values of the intersection points are the same. The silicon slice positioning structure with defects on the back side and front side dotting changes the existing time-consuming and labor-consuming method of calculating die positions through visual inspection by leading specific defect positions to be built with a coordinate, improves work efficiency and positioning accuracy rate, reduces error probability, shortens positioning time, and leads theoretical value of front side scratching probability to be zero.
Description
Technical field
The utility model relates to semiconductor integrated circuit and makes the field, belongs to the location structure that a kind of silicon chip defect on back side front that is used for the defective monitoring is got ready.
Background technology
In the manufacturing process of silicon chip, certain die (crystal grain) defectiveness appears through regular meeting, when finding silicon chip back side crystal grain defectiveness usually, confirm the position through the method for counting die earlier from the back side, translate into positive method again and get ready through number die.This locate mode not only wastes time and energy, and also pollute the UV film easily, and the accuracy rate of location is very low.Through existing experimental data, the common die of this kind way on average spends 5 minutes, the while easy error, and risk is geometric progression to be increased.And cause the silicon chip upset to contact with purification paper in the front later on owing to have inspection method now, be prone in relatively moving cause that new scuffing is unusual.Along with the increase of single piece of silicon chip defect on back side, institute's time-consuming will increase progressively with the risk that is produced.Because current scribe line size is more and more littler, it is increasing to the influence of silicon chip that the back side collapses defective such as tooth.Get mode ready in order to change current more original location,, can accurately locate the synchronism of positive defect on back side, accurately defect on back side die is carried out the front and get ready to reach so need an easy to operate defect location device.
The utility model content
The technical problem that the utility model will solve provides the location structure that a kind of silicon chip defect on back side front is got ready, can accurately locate the position of defect on back side in the front, improves the positive accuracy of getting ready, and time saving and energy saving.
For solving the problems of the technologies described above; The location structure that the silicon chip defect on back side front of the utility model is got ready; Comprise the film magazine that silicon chip is installed, respectively be provided with a scale around the said film magazine, wherein two adjacent scale outsides are respectively equipped with a laser localized light comparing; Laser that each laser localized light comparing sends and non-conterminous two scales intersect, and the scale value at intersection point place is identical.
Further, said film magazine has the groove of the silicon chip insertion that supplies the band iron hoop.
Further, said adjacent scale is vertical each other.The laser that said two laser localized light comparings send is vertical each other.
Preferably, the minimum scale of said scale is 1 millimeter.
The utility model has changed existing artificial range estimation and has calculated the way that wastes time and energy of die position through the coordinatograph to concrete defective locations, and error probability reduces, and shorten positioning time, and the positive probability theory value that scratches is zero.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is done further detailed explanation:
Accompanying drawing is the structural representation of the utility model.
Wherein description of reference numerals is following:
1 is silicon chip; 2 is scale; 3 is laser localized light comparing; 4 is iron hoop.
Embodiment
The location structure that the silicon chip defect on back side front of the utility model is got ready shown in accompanying drawing, comprises the metal film magazine that silicon chip 1 is installed, and said metal film magazine has the groove that supplies silicon chip 1 to insert.Respectively being provided with a minimum scale around the said metal film magazine is 1 millimeter scale 2; Adjacent scale 2 is vertical each other; Wherein two adjacent scale 2 outsides are respectively equipped with a laser localized light comparing 3; Laser that each laser localized light comparing 3 sends and non-conterminous two scales 2 intersect, and the scale value at intersection point place is identical, and this laser localized light comparing 3 is installed on the supporting support.The laser that said two laser localized light comparings 3 send is vertical each other.In the present embodiment, used laser localized light comparing is green glow one a word line positioning lamp, and model is RB635-5G2.
In the utility model, silicon chip 1 is to handle through scribing, because when scribing, need silicon chip be attached on the iron hoop 4 through film, therefore, shown in accompanying drawing, iron hoop 4 is an overall structure with silicon chip 1.
Shown in accompanying drawing, the scale 2 of horizontally set is respectively X1 and X2, and the scale 2 that vertically is provided with is respectively Y1 and Y2, and X1 and X2 are 0 with the centre mark of silicon chip 1.The location of this device is got ready in the process, may further comprise the steps: 1) one side make silicon chip band angle outwardly, silicon chip 1 back side of band iron hoop 4 is put on this location structure up, iron hoop inserts in the groove of metal film magazine; 2) location structure is positioned on the INT outward appearance board, carries out conventional micro; 3) when finding certain die defectiveness, through microscopic examination, move X1 scale outer laser localized light comparing 3 and the outer laser localized light comparing 3 of Y1 scale, the intersection point of the two bundle laser that two laser localized light comparings 3 send is positioned on the defective die; 4) according to two laser beam positions, the abscissa of recording defect position and ordinate, must guarantee X1=X2, Y1=Y2, for example (30,40) this moment; 5) note the coordinate figure of all defect on back side; 6) silicon chip is taken out from groove, and is 180 ° of center upsets with the Y axle, one side make silicon chip face up, with angle still outwardly; 7) abscissa value that records in the step 4 is obtained a new coordinate figure (30 about the Y axial symmetry; 40); Move the outer laser localized light comparing 3 of X1 scale; Make the intersection point of the laser beam that two laser localized light comparings 3 send be positioned at new coordinate figure indication position, the position that the two bundle laser that this moment, two laser localized light comparings 3 sent intersect is exactly silicon chip defect on back side position, the front is carried out in this position get ready and get final product.
This patent has solved existing artificial range estimation and has gone the such way that very wastes time and energy of number die through the coordinatograph to concrete defective locations.Can explain that through available data the common die of this kind way on average spends 5 minutes, the while easy error, risk is geometric progression to be increased.And cause the silicon chip upset to contact with purification paper in the front later on owing to have inspection method now, be prone in relatively moving cause that new scuffing is unusual.Along with the increase of single piece of silicon chip defect on back side, institute's time-consuming will increase progressively with the risk that is produced.And after using this device, defective locations is digitized, and error probability reduces, and shorten positioning time, and the positive probability theory value that scratches is zero.
More than through specific embodiment the utility model has been carried out detailed explanation, but these are not the restriction of formation to the utility model.Under the situation that does not break away from the utility model principle, those skilled in the art also can make many distortion and equivalent replacement to the utility model etc., and these also should be regarded as the protection range of the utility model.
Claims (5)
1. location structure that silicon chip defect on back side front is got ready; It is characterized in that: comprise the film magazine that silicon chip (1) is installed; Respectively be provided with a scale (2) around the said film magazine; Wherein two adjacent scales (2) outside is respectively equipped with a laser localized light comparing (3), and laser that each laser localized light comparing (3) sends and non-conterminous two scales (2) intersect, and the scale value at intersection point place is identical.
2. the location structure that silicon chip defect on back side according to claim 1 front is got ready is characterized in that: said silicon chip (1) is for being fitted in the silicon chip after the scribing on the iron hoop (4) through film.
3. the location structure that silicon chip defect on back side according to claim 1 front is got ready is characterized in that: said film magazine has the groove of silicon chip (1) insertion that supplies the band iron hoop.
4. the location structure that silicon chip defect on back side according to claim 1 front is got ready is characterized in that: said adjacent scale (2) is vertical each other.
5. the location structure of getting ready according to claim 1 or 2 or 3 described silicon chip defect on back side fronts, it is characterized in that: the minimum scale of said scale (2) is 1 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203997678U CN202282333U (en) | 2011-10-19 | 2011-10-19 | Silicon slice positioning structure with defects on back side and front side dotting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203997678U CN202282333U (en) | 2011-10-19 | 2011-10-19 | Silicon slice positioning structure with defects on back side and front side dotting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202282333U true CN202282333U (en) | 2012-06-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203997678U Expired - Fee Related CN202282333U (en) | 2011-10-19 | 2011-10-19 | Silicon slice positioning structure with defects on back side and front side dotting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202282333U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104567590A (en) * | 2013-10-12 | 2015-04-29 | 上海和辉光电有限公司 | Defect positioning component |
| CN108346595A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Macroscopical cut length-measuring appliance |
-
2011
- 2011-10-19 CN CN2011203997678U patent/CN202282333U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104567590A (en) * | 2013-10-12 | 2015-04-29 | 上海和辉光电有限公司 | Defect positioning component |
| CN108346595A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Macroscopical cut length-measuring appliance |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131220 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131220 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120620 Termination date: 20151019 |
|
| EXPY | Termination of patent right or utility model |