CN202277943U - Dip feeding device for chip bumps - Google Patents

Dip feeding device for chip bumps Download PDF

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Publication number
CN202277943U
CN202277943U CN 201120422507 CN201120422507U CN202277943U CN 202277943 U CN202277943 U CN 202277943U CN 201120422507 CN201120422507 CN 201120422507 CN 201120422507 U CN201120422507 U CN 201120422507U CN 202277943 U CN202277943 U CN 202277943U
Authority
CN
China
Prior art keywords
dipping
groove
different
depth
pay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201120422507
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Chinese (zh)
Inventor
成英华
孙睿
王风平
丁海幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honor Device Co Ltd
Original Assignee
Huawei Device Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Device Co Ltd filed Critical Huawei Device Co Ltd
Priority to CN 201120422507 priority Critical patent/CN202277943U/en
Priority to PCT/CN2012/077056 priority patent/WO2012136166A2/en
Application granted granted Critical
Publication of CN202277943U publication Critical patent/CN202277943U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27422—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form by dipping, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The embodiment of the utility model relates to a dip feeding device for chip bumps. The dip feeding device for chip bump comprises a baseplate, the baseplate is provided with grooves (with different dipping depths) for carrying out dipping on different chip bumps, and the inside of each groove is accommodated with a dipping agent; and the grooves with different depths are mutually communicated. According to the dip feeding device for chip bumps provided by the utility model, through designing the grooves with different depths on the baseplate and communicating the grooves with different depths, an effect that a same dip feeding device provides different dipping depths is achieved, thereby meeting the requirements that various different dipping depths are required in the surface-mount process of an electronic product; and meanwhile, the dipping agents in the grooves with different depths can flow to one another, thereby greatly improving the updating velocity of the dipping agent, and effectively solving the problem that the dipping agent is easy to volatilize and dry.

Description

The dipping pay-off of chip lug
Technical field
The utility model relates to electronic product surface mounting technology field, relates in particular to a kind of dipping pay-off of chip lug.
Background technology
Electronic product has got into SMT (Surface Mount Technology; Surface mounting technology) epoch, printing machine is responsible for printing prefluxing to PCB (Printed Circuit Board, printed circuit board (PCB)); Chip mounter is responsible on PCB, mounting components and parts, reflow soldering then.At present along with electronic product to the development of portable, miniaturization, the progressively miniaturization of export-oriented size of mount components, the mount components package pitch is to more thin space development; Requiring of feasible seal prefluxing is increasingly high, especially the BGA of 0.3mm and the following spacing of 0.3mm (Ball Grid Array, BGA Package), CSP (Chip Scale Package; Chip size packages) appearance of mount components such as; The seal prefluxing becomes very difficult or can't realize that at all at this moment need come the projection of dipping chip with the method for dipping scaling powder or tin cream, the projection of its chips is the tie point of chip and PCB conducting; For example, soldered ball or salient point.The projection of chip is immersed in the groove that scaling powder is housed, makes scaling powder in the projection dipping of chip, then with chip attachment to PCB, carry out reflow soldering.At present, industry generally increases the function that the dipping pay-off is accomplished the projection dipping scaling powder of chip on chip mounter, and the dipping pay-off need provide the projection dipping of the scaling powder of certain depth to chip, and the dipping degree of depth is a key process parameter.
Dipping pay-off commonly used is at present placed the dipping agent through a groove, controls the dipping degree of depth through the degree of depth of groove itself.Fig. 1 is a dipping pay-off sketch map of the prior art; Of Fig. 1, in the prior art, a dipping pay-off has only a groove 10; Promptly in same dipping pay-off, a kind of dipping degree of depth can only be provided; And the dipping pay-off has accounted for a plurality of erect-positions of chip mounter usually, and for the situation of the multiple dipping degree of depth of needs, a plurality of dipping pay-offs greatly reduce the space that chip mounter holds material; In addition, dipping agent turnover rate is lower in a plurality of dipping pay-offs, and the dipping agent is volatilized easily, become dry, the unfavorable technology controlling and process of using.
Summary of the invention
The utility model embodiment relates to a kind of dipping pay-off of chip lug, through the groove of different depth is set on substrate, is implemented in the multiple different dipping degree of depth is provided in the same dipping pay-off; With mutual conduction between the groove, make that the dipping agent between the groove can be flowed each other simultaneously, to improve the renewal rate of dipping agent.
The utility model embodiment provides a kind of dipping pay-off of chip lug; The dipping pay-off of said chip lug comprises: substrate; Have on the said substrate and be used for the groove that different chip lugs carry out the different dipping degree of depth of dipping, be equipped with the dipping agent in the said groove; Be conducted between the groove of said different depth.
The dipping pay-off of the chip lug that the utility model embodiment provides is characterized in that, the direct conducting of the groove of said different depth.The groove of said different depth on top or the bottom be conducted.The number of said groove is 2-4.The degree of depth of said groove is 4 mils-12 mils.The difference in height of adjacent said groove is 0.5 mil-4 mil.Said dipping agent is scaling powder or tin cream.
The dipping pay-off of the chip lug that the utility model embodiment proposes; Groove through design different depth on substrate; And be conducted between the groove with different depth; Realized that same dipping pay-off provides the different dipping degree of depth, satisfied the demand of the multiple different dipping degree of depth of needs in the electronic product surface mount process, the dipping agent between the groove of different depth simultaneously can be flowed each other; Improve the renewal rate of dipping agent greatly, effectively solved the problem that the dipping agent is volatilized easily, become dry.
Description of drawings
Fig. 1 is a dipping pay-off sketch map of the prior art;
Fig. 2 is one of the dipping pay-off sketch map of the chip lug of the utility model embodiment;
Fig. 3 be the utility model embodiment chip lug dipping pay-off sketch map two;
Fig. 4 be the utility model embodiment chip lug dipping pay-off sketch map three;
Fig. 5 is the dipping profile of dipping pay-off of the chip lug of the utility model embodiment;
Fig. 6 be the utility model embodiment chip lug dipping pay-off sketch map four;
Fig. 7 be the utility model embodiment chip lug dipping pay-off sketch map five;
Fig. 8 be the utility model embodiment chip lug dipping pay-off sketch map six.
The specific embodiment
Through accompanying drawing and embodiment, the technical scheme of the utility model is done further detailed description below.
The utility model embodiment provides a kind of dipping pay-off of chip lug; Through the groove of different depth is set on substrate; Make the dipping agent in the groove have the different dipping degree of depth, to satisfy the situation of the multiple dipping degree of depth of electronic device surface mount process chips projection dipping needs.Be mutual conduction between a plurality of grooves simultaneously, the dipping agent between a plurality of grooves can be flowed each other, and the utilization rate of dipping agent significantly improves, and renewal speed is accelerated, and has solved the problem that the dipping agent is in use volatilized easily, become dry.
The utility model embodiment one
Fig. 2 is one of the dipping pay-off sketch map of the chip lug of the utility model embodiment; As shown in Figure 2; The dipping pay-off of the chip lug of the utility model embodiment one is provided with groove 20 on substrate 23; The sub-groove 21 and sub-groove 22 of different depth are set, directly conducting between sub-groove 21 and the sub-groove 22 (directly conducting is exactly that the isolation surface between the sub-groove is directly removed) in the groove 20.Fig. 3 be the utility model embodiment chip lug dipping pay-off sketch map two, through Fig. 3 can the sub-groove 21 of clearer understanding and sub-groove 22 between the direct implication of conducting.As shown in Figure 3; The sub-groove 21 and sub-groove 22 of different depth are set in the groove 20; Direct conducting is exactly that the isolation surface 24 between sub-groove 21 and the sub-groove 22 is removed between sub-groove 21 and the sub-groove 22; Do not have spacing between so groove, saved the space that the dipping pay-off takies chip mounter greatly, improved the space that chip mounter holds material.
Fig. 4 be the utility model embodiment chip lug dipping pay-off sketch map three; As shown in Figure 4; When being full of the dipping agent in the groove 20, because sub-groove 21 has the different degree of depth with sub-groove 22, thereby sub-groove 21 can provide the different dipping degree of depth with sub-groove 22.
Need to prove; Bottom portion of groove can be provided with a plurality of sub-grooves with different depth; The number of sub-groove can be decided according to the actual requirements, and the utility model embodiment does not do concrete qualification, and 2-4 the sub-groove (being preferably 2-3) with different depth generally can be set; Like the setting of fruit groove number very little, then possibly can't satisfy the needs of the different dipping degree of depth, it is not high that then a lot of too much dipping degree of depth utilization rates are set, and causes the space waste of chip mounter erect-position on the contrary.
The depth bounds of groove generally at 4mil to about the 12mil; The height difference of sub-groove at 0.5mil between the 4mil; Can be decided according to the actual requirements, for example height difference can be designed to 0.5mil, 1mil, 0.1mm etc. between each sub-groove, is preferably 1mil among the utility model embodiment.
The dipping agent is scaling powder or tin cream or other dipping liquid.
Concrete, as shown in Figure 4 again, explain that for example the dipping pay-off adds the process of dipping agent 25, has increased dipping agent material-dividing groove 26 in Fig. 4 dipping pay-off sketch map.In the dipping agent material-dividing groove 26 dipping agent 25 is housed, dipping agent material-dividing groove 26 bottom openings and dipping agent material-dividing groove 26 bottoms closely contact with substrate 23, and dipping agent material-dividing groove 26 can be free to slide in the upper surfaces level direction of substrate 23.A groove 20 is set on the substrate 23, sub-groove 21 and the sub-groove 22 with different depth is set in the groove 20.The dipping agent material-dividing groove 26 that dipping agent 25 is housed slowly slides into the other end of substrate 23 from an end of substrate 23; In the process that dipping agent material-dividing groove 26 slides; Dipping agent 25 is full of groove 20 gradually; Dipping agent 25 upper surfaces in the final groove 20 are equal with the upper surface of substrate 23, and then groove 20 in can form the two kind different dipping degree of depth because sub-groove 21 and sub-groove 22 have different depth this moment.In the dipping process, chip lug can be selected to carry out dipping with the zone of the dipping degree of depth same depth of said chip lug according to the difference of the required dipping degree of depth.
Fig. 5 is the dipping profile of dipping pay-off of the chip lug of the utility model embodiment; As shown in the figure; Be full of dipping agent 25 in the groove 20, the sub-groove 21 in the groove 20 is different with sub-groove 22 degree of depth, thereby sub-groove 21 is different with the sub-groove 22 dipping degree of depth.Contain projection 42 on the chip 41; Contain projection 44 on another chip 43; The size of chip 41 and chip 43 is inequality; The dipping degree of depth that in the process that mounts, needs is also inequality, according to two needs that chip is different, respectively chip is put into two different sub-grooves of the dipping degree of depth and carries out dipping.
The dipping pay-off of the chip lug of the utility model embodiment one is provided with two sub-groove 21 and sub-grooves 22 that the degree of depth is different on substrate; Directly conducting between sub-groove 21 and the sub-groove 22; So just can two kinds of different dipping degree of depth be provided simultaneously at same dipping feed appliance; And do not have spacing between the sub-groove, saved the space that the dipping feed appliance takies chip mounter greatly, improved the space that chip mounter holds material; Simultaneously sub-groove 21 is direct conductings with sub-groove 22; Dipping agent in the then sub-groove 21 and the dipping agent in the sub-groove 22 can be flowed each other; This has just improved the renewal rate of dipping agent in the groove greatly; The problem of effectively having avoided the dipping agent to volatilize easily, become dry, the control of favourable dipping technology.
The utility model embodiment two
Fig. 6 be the utility model embodiment chip lug dipping pay-off sketch map four; As shown in Figure 6; The dipping pay-off of the chip lug of the utility model embodiment two comprises groove 20; With the sub-groove 61 that is provided with respectively in groove 20 bottoms, sub-groove 62, sub-groove 63, sub-groove 61, sub-groove 62, sub-groove 63 have the different degree of depth, when being full of dipping agent 25 in the groove 20; The dipping degree of depth that the sub-groove of different depth forms is different; Be that the sub-groove 61 corresponding dipping agent degree of depth are inequality with the sub-groove 62 corresponding dipping agent degree of depth and the sub-groove 63 corresponding dipping agent degree of depth, at this moment, three kinds of different dipping degree of depth can be provided in groove 20.Concrete dipping mode is identical with embodiment one, repeats no more here.
The utility model embodiment two is identical with the principle of the utility model embodiment one; The different a plurality of sub-groove of the degree of depth promptly is set on substrate; Directly conducting between the different sub-groove of the degree of depth, so just can put at one time provides the multiple different dipping degree of depth simultaneously; Dipping agent in the sub-groove simultaneously can be flowed each other, and this has just improved the renewal rate of dipping agent in the groove, the phenomenon of effectively having been avoided the dipping agent to volatilize easily, become dry greatly.
The utility model embodiment three
Fig. 7 be the utility model embodiment chip lug dipping pay-off sketch map five; As shown in Figure 7; The dipping pay-off of the chip lug of the utility model embodiment three is provided with degree of depth different recesses 71, groove 72, groove 73 on substrate 70, the top of groove 71, groove 72, groove 73 is mutual conduction.Concrete; When being full of the dipping agent in the groove,, make that the dipping degree of depth of groove 71, groove 72, groove 73 interior dipping agent is inequality because the degree of depth of groove 71, groove 72, groove 73 is different; When different chip lug needs the different dipping degree of depth; Can select corresponding grooves to carry out dipping according to actual needs, concrete dipping mode is identical with embodiment one, repeats no more here.Because of being mutual conduction between groove 71, groove 72, the groove 73, make that the liquid in three grooves can flow each other simultaneously, accelerated the renewal rate of liquid in the groove.
The principle essence of the utility model embodiment three is that a plurality of degree of depth different recesses are set on substrate, and a plurality of grooves top conducting that the degree of depth is different so just can provide the multiple different dipping degree of depth at same dipping pay-off simultaneously.The utility model embodiment three adopts is the principle of top conducting between the groove of different depth; And the utility model embodiment one adopts is the direct principle of conducting between the groove of different depth; Its essence all is that the dipping agent in the groove can be flowed each other; This has just improved the renewal rate of dipping agent in the groove, the phenomenon of effectively having been avoided the dipping agent to volatilize easily, become dry greatly.
The utility model embodiment four
Fig. 8 be the utility model embodiment chip lug dipping pay-off sketch map six; As shown in Figure 8; The dipping pay-off of the chip lug of the utility model embodiment four is provided with degree of depth different recesses 81, groove 82, groove 83 on substrate 80, the bottom of groove 81, groove 82, groove 83 is mutual conduction.Concrete; When being full of the dipping agent in the groove,, make that the dipping degree of depth of groove 81, groove 82, groove 83 interior dipping agent is inequality because the degree of depth of groove 81, groove 82, groove 83 is different; When different chip lug needs the different dipping degree of depth; Can select corresponding grooves to carry out dipping according to actual needs, concrete dipping mode is identical with embodiment one, repeats no more here.Because of being mutual conduction between groove 81, groove 82, the groove 83, make that the liquid in three grooves can flow each other simultaneously, accelerated the renewal rate of liquid in the groove.
The principle essence of the utility model embodiment four is that a plurality of degree of depth different recesses are set on substrate, a plurality of bottom portion of groove conductings that the degree of depth is different, and so just can put at one time provides the multiple different dipping degree of depth simultaneously.The utility model embodiment four adopts is the principle of bottom conducting between the groove of different depth; And the utility model embodiment one adopts is the direct principle of conducting between the groove of different depth; Its essence all is that the dipping agent in the groove can be flowed each other; This has just improved the renewal rate of dipping agent in the groove, the phenomenon of effectively having been avoided the dipping agent to volatilize easily, become dry greatly.
The dipping pay-off of the chip lug among the utility model embodiment through a plurality of degree of depth different recesses are set, can provide the multiple dipping degree of depth thereby be implemented in same dipping pay-off simultaneously on substrate.Be mutual conduction between a plurality of grooves simultaneously, the dipping agent can be flowed each other between a plurality of grooves, and the utilization rate of dipping agent significantly improves, and renewal speed is accelerated.
The dipping pay-off of the chip lug that the utility model embodiment proposes; Having overcome traditional dipping pay-off can only provide the shortcoming of a dipping degree of depth at a dipping pay-off; Satisfied the situation of electronic device multiple dipping degree of depth of needs in the dipping process; And greatly reduce the space that the dipping pay-off takies chip mounter, hold material for chip mounter provides more space; Can circulate each other between the dipping agent of the multiple dipping degree of depth simultaneously, make the utilization rate of dipping agent significantly improve, quicken the renewal speed of dipping agent, avoid problems such as the dipping agent is volatile, exsiccation effectively, help technology controlling and process.
The above-described specific embodiment; Purpose, technical scheme and beneficial effect to the utility model have carried out further explain, it should be understood that the above is merely the specific embodiment of the utility model; And be not used in the protection domain that limits the utility model; All within the spirit and principle of the utility model, any modification of being made, be equal to replacement, improvement etc., all should be included within the protection domain of the utility model.

Claims (7)

1. the dipping pay-off of a chip lug is characterized in that, said chip lug dipping pay-off comprises:
Substrate has on the said substrate and is used for the groove that different chip lugs carry out the different dipping degree of depth of dipping, is equipped with the dipping agent in the said groove;
Be conducted between the groove of said different depth.
2. the dipping pay-off of chip lug as claimed in claim 1 is characterized in that, the direct conducting of the groove of said different depth.
3. the dipping pay-off of chip lug as claimed in claim 1 is characterized in that, the groove of said different depth on top or the bottom be conducted.
4. the dipping pay-off of chip lug as claimed in claim 1 is characterized in that, the number of said groove is 2-4.
5. the dipping pay-off of chip lug as claimed in claim 1 is characterized in that, the degree of depth of said groove is 4 mils-12 mils.
6. the dipping pay-off of chip lug as claimed in claim 1 is characterized in that, the difference in height of adjacent said groove is 0.5 mil-4 mil.
7. the dipping pay-off of chip lug as claimed in claim 1 is characterized in that, said dipping agent is scaling powder or tin cream.
CN 201120422507 2011-10-31 2011-10-31 Dip feeding device for chip bumps Expired - Lifetime CN202277943U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN 201120422507 CN202277943U (en) 2011-10-31 2011-10-31 Dip feeding device for chip bumps
PCT/CN2012/077056 WO2012136166A2 (en) 2011-10-31 2012-06-18 Chip pad glue feeder apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201120422507 CN202277943U (en) 2011-10-31 2011-10-31 Dip feeding device for chip bumps

Publications (1)

Publication Number Publication Date
CN202277943U true CN202277943U (en) 2012-06-20

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Application Number Title Priority Date Filing Date
CN 201120422507 Expired - Lifetime CN202277943U (en) 2011-10-31 2011-10-31 Dip feeding device for chip bumps

Country Status (2)

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CN (1) CN202277943U (en)
WO (1) WO2012136166A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140048586A1 (en) * 2012-08-15 2014-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Innovative Multi-Purpose Dipping Plate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3385872B2 (en) * 1995-12-25 2003-03-10 三菱電機株式会社 Solder supply method and solder supply apparatus
US6293317B1 (en) * 1999-04-12 2001-09-25 Esec Trading Sa Method and device for the application of a liquid substance
JP2002172460A (en) * 2000-12-05 2002-06-18 Towa Corp Device for and method of coating flux
KR20090056996A (en) * 2006-09-01 2009-06-03 외르리콘 어셈블리 이큅먼트 아게, 슈타인하우젠 Device for wetting bumps of a semiconductor chip with a liquid substance
EP2067166A1 (en) * 2006-09-21 2009-06-10 Oerlikon Assembly Equipment AG, Steinhausen Method and device for wetting the bumps of a semiconductor chip with soldering flux

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140048586A1 (en) * 2012-08-15 2014-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Innovative Multi-Purpose Dipping Plate
US9700950B2 (en) * 2012-08-15 2017-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Innovative multi-purpose dipping plate

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Publication number Publication date
WO2012136166A2 (en) 2012-10-11
WO2012136166A3 (en) 2012-11-29

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Address after: 518129 Building 2, B District, Bantian HUAWEI base, Longgang District, Shenzhen, Guangdong.

Patentee after: Huawei terminal (Shenzhen) Co.,Ltd.

Address before: 518129 Building 2, B District, Bantian HUAWEI base, Longgang District, Shenzhen, Guangdong.

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Address after: 523808 Southern Factory Building (Phase I) Project B2 Production Plant-5, New Town Avenue, Songshan Lake High-tech Industrial Development Zone, Shenzhen, Guangdong Province

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Address before: 518129 Building 2, B District, Bantian HUAWEI base, Longgang District, Shenzhen, Guangdong.

Patentee before: Huawei terminal (Shenzhen) Co.,Ltd.

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Patentee after: Honor Device Co.,Ltd.

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