CN202275910U - Substrate integrated waveguide miniaturized bandpass hybrid ring - Google Patents

Abstract

The utility model relates to a substrate integrated waveguide miniaturized bandpass hybrid ring which comprises a first metal copper-clad layer, a dielectric layer and a second metal copper-clad layer which are sequentially laminated from top to bottom, wherein the first metal copper-clad layer comprises a substrate integrated waveguide upper surface region, four microstrip lines, eight sets of coupling slots, an S-shaped upper slot, three rows of transverse plated through holes and three rows of longitudinal plated through holes; the four microstrip lines are positioned on both sides of the substrate integrated waveguide upper surface region and are connected with the substrate integrated waveguide upper surface region; the eight sets of coupling slots are positioned on both sides of the microstrip line in the substrate integrated waveguide upper surface region; the S-shaped upper slot is positioned in the substrate integrated waveguide upper surface region; the three rows of transverse plated through holes and three rows of longitudinal plated through holes are positioned in the substrate integrated waveguide upper surface region; and the plated through holes penetrate through the substrate integrated waveguide upper surface region and the dielectric layer and are connected with the second metal copper-clad layer to form a resonant cavity 1, a resonant cavity 2, a resonant cavity 3 and a resonant cavity 4. The utility model avoids the problem of waste of inner space in the existing hybrid ring, and can greatly reduce the circuit area of the traditional hybrid ring.

Description

Substrate integration wave-guide miniaturization band leads to hybrid ring

Technical field

The utility model belongs to microwave and millimeter wave passive device technical field, the hybrid ring in particularly a kind of microwave and millimeter wave passive device.

Background technology

The development of wireless mobile telecommunication technology requires the microwave and millimeter wave circuit when guaranteeing electric property, compressor circuit area, i.e. miniaturization as much as possible.On the one hand, along with the progress of semiconductor technology, the active circuit in the wireless communication system has been realized miniaturization and can have been effectively utilized modern encapsulation technology and carry out integrated; On the other hand, passive circuits such as antenna, filter, coupler, hybrid ring still are faced with the key technology difficult problem of miniaturization.

Hybrid ring is a critical component of microwave and millimeter wave subsystem, is widely used in the microwave and millimeter wave circuit.Hybrid ring is a kind of four port devices, and from an input port input, two output ports are realized the output of constant amplitude homophase, and from another input port input, two output ports are realized constant amplitude anti-phase output, guarantee good isolation between two input ports.Hybrid ring can be realized by transmission line structures such as microstrip line, co-planar waveguide, metal waveguides, also can be designed by the substrate integrated wave guide structure that proposes in recent years.This kind has the two-fold advantage of planar circuit and metal waveguide based on the hybrid ring of substrate integration wave-guide design, is very suitable in microwave and millimeter wave integrated circuit of new generation, using.

In order to satisfy the electric property of hybrid ring; And consider the architectural characteristic of substrate integration wave-guide; Existing substrate integration wave-guide hybrid ring is (like Zhang Yulin; The theoretical and experimental study of substrate integration wave-guide propagation characteristic and filter [D]. Southeast China University's thesis for the doctorate; Chapter 7,2005, the 102nd～103 page) need be according to following principle design: the distance between input port and two output ports is 3/4ths guide wavelengths, and (guide wavelength is meant two adjacent peaks of the composite wave in waveguide, propagated or the distance between the trough; The electromagnetic wavelength of just being propagated in the waveguide of certain mode), the distance between another input port and two output ports is respectively 3/4ths and 5/4ths guide wavelengths.At this moment, the length of whole hybrid ring need reach 3.5 times of guide wavelengths, and the required circuit area that takies is very big.

In addition, the frequency response characteristic of existing hybrid ring does not have frequency selective characteristic, does not promptly have filter capacity.If a system framework need use filter in the front end or the rear end of hybrid ring, then need design hybrid ring and filter separately, and with its cascade.At this moment, system framework is comparatively complicated, and required circuit area is bigger, and loss is bigger behind the circuits cascading

The utility model content

The purpose of the utility model is in order to overcome existing substrate integration wave-guide hybrid ring circuit structure area deficiency bigger than normal, and makes it have the frequency selective power, has proposed the logical hybrid ring of substrate integration wave-guide miniaturization band.

One of technical scheme of the utility model is: a kind of substrate integration wave-guide miniaturization band leads to hybrid ring; It is characterized in that; Comprise that first metal that stacks gradually from top to bottom covers copper layer, dielectric layer, second metal and covers the copper layer; Said first metal cover the copper layer comprise table section on the substrate integration wave-guide, be positioned at table section both sides and four road microstrip lines that are attached thereto on the substrate integration wave-guide, be positioned at the inner microstrip line both sides of table section on the substrate integration wave-guide eight groups of coupling slots, be positioned at groove on the inner S shape of table section on the substrate integration wave-guide; Be positioned on the substrate integration wave-guide three horizontal rows on the table section to, three arrange plated-through hole longitudinally; Said plated-through hole has run through on the substrate integration wave-guide table section and has covered the copper layer with the dielectric layer and second metal and be connected, and forms resonant cavity one, resonant cavity two, resonant cavity three resonant cavity four; Said second metal covers the copper layer and comprises that being positioned at second metal covers groove under the inner S shape of copper layer, and said resonant cavity one resonant cavity two sizes are identical, and said resonant cavity three resonant cavity four sizes are identical; Said resonant cavity one is bigger than resonant cavity three; Said plated-through hole interrupts at microstrip line and coupling slot place, forms the feed window, and the plated-through hole at the juncture area place between said resonant cavity one and resonant cavity two, resonant cavity two and resonant cavity three, resonant cavity one and the resonant cavity four interrupts; Form continuous coupled window; The plated-through hole at the juncture area place between said resonant cavity three and the resonant cavity four interrupts, and forms three groups discrete coupling window, and groove is since the center line of first group of discrete coupling window on the said S shape; Pass through second group of middle discrete coupling window with S shape; Terminate in the center line of the 3rd group of discrete coupling window, groove passes through second group of middle discrete coupling window since the center line of first group of discrete coupling window with S shape under the said S shape; Terminate in the center line of the 3rd group of discrete coupling window, under the said S shape trend of groove and S shape on the trend of groove symmetrical about the center line mirror image of the coupling window that disperses.

Two of the technical scheme of the utility model is: a kind of substrate integration wave-guide miniaturization band leads to hybrid ring; It is characterized in that; Comprise that first metal that stacks gradually from top to bottom covers copper layer, dielectric layer, second metal and covers copper layer, second dielectric layer, the 3rd metal and cover the copper layer; Said first metal cover the copper layer comprise table section on the substrate integration wave-guide, be positioned at table section both sides and the two-way microstrip line that is attached thereto on the substrate integration wave-guide, be positioned at the inner microstrip line both sides of table section on the substrate integration wave-guide four groups of coupling slots, be positioned on the substrate integration wave-guide two horizontal rows on the table section to, three arrange plated-through hole longitudinally; Said plated-through hole has run through that table section on the substrate integration wave-guide, dielectric layer, second metal are covered the copper layer, second dielectric layer covers the copper layer with the 3rd metal and is connected, and forms resonant cavity one, resonant cavity two, resonant cavity three resonant cavity four; Said second metal cover the copper layer comprise corresponding to the coupling of resonant cavity one center circle, corresponding in resonant cavity four positions near the positive coupling groove of two mirror images symmetries of plated-through hole; Said the 3rd metal covers that the copper layer comprises table section under the substrate integration wave-guide, is positioned at table section both sides under the substrate integration wave-guide and the 3rd layer of microstrip line of two-way that is attached thereto, four groups of the 3rd layer of coupling slots of the 3rd layer of microstrip line both sides being positioned at substrate integration wave-guide following table intra-zone; Said resonant cavity one resonant cavity two sizes are identical; Said resonant cavity three resonant cavity four sizes are identical; Said resonant cavity one is bigger than resonant cavity three, and said plated-through hole interrupts at microstrip line and coupling slot place, forms the feed window; Interrupt at the 3rd layer of microstrip line and the 3rd layer of coupling slot place; Form the feed window, the plated-through hole at the juncture area place between said resonant cavity one and resonant cavity four, resonant cavity three and the resonant cavity two interrupts, and forms continuous coupled window.

The beneficial effect of the utility model: because the utility model designs the hybrid ring structure based on the principle of coupled resonator; Utilize intercoupling between four cavity resonator structures to realize the circuit function of hybrid ring; And can compact layout; Thereby need adopt the excessive problem of area of long arc circuit structure that transmission path causes when having avoided existing hybrid ring to design, also avoid the problem of existing hybrid ring inner space waste, can dwindle conventional hybrid loop circuit area greatly.In addition, the logical hybrid ring self of this substrate integration wave-guide miniaturization band has the logical frequency response characteristic of band, and the promptly integrated function of band pass filter has outstanding advantage in system integration, miniaturization field

Description of drawings

Fig. 1 is the schematic side view of the directional coupler embodiment 1 of the utility model.

Fig. 2 is the circuit structure diagram that first metal of the directional coupler embodiment 1 of the utility model covers the copper layer.

Fig. 3 is the circuit structure diagram that second metal of the directional coupler embodiment 1 of the utility model covers the copper layer.

Fig. 4 is the schematic side view of the directional coupler embodiment 2 of the utility model.

Fig. 5 is the circuit structure diagram that first metal of the directional coupler embodiment 2 of the utility model covers the copper layer.

Fig. 6 is the circuit structure diagram that second metal of the directional coupler embodiment 2 of the utility model covers the copper layer.

Fig. 7 is the circuit structure diagram that the 3rd metal of the directional coupler embodiment 2 of the utility model covers the copper layer.

Embodiment

Below in conjunction with accompanying drawing and specific embodiment the utility model is done further explanation.

Embodiment 1: like Fig. 1, Fig. 2, shown in Figure 3; The logical hybrid ring of a kind of substrate integration wave-guide miniaturization band comprises that first metal that stacks gradually from top to bottom covers copper layer 1, dielectric layer 4, second metal and covers copper layer 2; In order to form the hybrid ring of the utility model; Through printed-circuit board manufacturing technology to first metal cover copper layer 1, second metal covers copper layer 2 and is processed to form required metal pattern (circuit structure), divide through virtual dotted line between the each several part in this pattern, to dielectric layer 4 punching and surface metalation is done in the hole handled and form plated-through hole 6; Said first metal cover copper layer 1 comprise table section 11 on the substrate integration wave-guide, be positioned at table section 11 both sides on the substrate integration wave-guide and four road microstrip lines 12 that are attached thereto, be positioned at inner microstrip line 12 both sides of table section on the substrate integration wave-guide 11 eight groups of coupling slots 13, be positioned at groove 14 on the inner S shape of table section on the substrate integration wave-guide 11; Be positioned on the substrate integration wave-guide three horizontal rows on the table section 11 to, three arrange plated-through hole 6 longitudinally, said plated-through hole 6 has run through on the substrate integration wave-guide table section 11 and has covered copper layer 2 with the dielectric layer 4 and second metal and be connected, and forms resonant cavity 1, resonant cavity 2 72, resonant cavity 3 73, resonant cavity 4 74; Said second metal covers copper layer 2 and comprises that being positioned at second metal covers groove 21 under the inner S shape of copper layer 2; Said resonant cavity one 71 resonant cavity 2 72 sizes are identical, and said resonant cavity 3 73 resonant cavity 4 74 sizes are identical, and said resonant cavity 1 is bigger than resonant cavity 3 73; Said plated-through hole 6 interrupts with coupling slot 13 places at microstrip line 12; Form the feed window, the size of feed window has determined the size of the external sort factor of resonant cavity 1, resonant cavity 2 72, resonant cavity 3 73, resonant cavity 4 74, plated-through hole 6 interruptions at the juncture area place between said resonant cavity 1 and resonant cavity 2 72, resonant cavity 2 72 and resonant cavity 3 73, resonant cavity 1 and the resonant cavity 4 74; Form continuous coupled window; The size of continuous coupled window has determined the size of the magnetic coupling coefficient between resonant cavity 1 and resonant cavity 2 72, resonant cavity 2 72 and resonant cavity 3 73, resonant cavity 1 and the resonant cavity 4 74, and the continuous coupled window size between continuous coupled window, resonant cavity 1 and the resonant cavity 2 73 between said resonant cavity 1 and the resonant cavity 2 74 is identical, all less than the continuous coupled window between resonant cavity 1 and the resonant cavity 2 72; The plated-through hole 6 at the juncture area place between said resonant cavity 3 73 and the resonant cavity 4 74 interrupts; Form three groups discrete coupling window, two groups of discrete coupling window sizes of both sides are identical, all less than middle one group of discrete coupling window; Groove 14 is since the center line of first group of discrete coupling window on the said S shape; Pass through middle discrete coupling window with S shape, terminate in the center line of the 3rd group of discrete coupling window, groove 21 is since the center line of first group of discrete coupling window under the said S shape; Pass through middle discrete coupling window with S shape; Terminate in the center line of the 3rd group of discrete coupling window, under the said S shape trend of groove 21 and S shape on groove 14 symmetrical about the center line mirror image of discrete coupling window, on the said S shape under groove 14, the S shape size of groove 21 and three groups of coupling windows that disperse determined the size of the electric coupling coefficient between resonant cavity 3 73 and the resonant cavity 4 74.

The logical hybrid ring of the substrate integration wave-guide miniaturization band of the utility model is based on the coupled resonator principle; Adopt four cavity resonator structure compact layout; Requirement according to design objective; Can confirm required external sort factor, magnetic coupling coefficient, electric coupling coefficient, and realize through corresponding circuit structure size; The directional coupler of said structure can be drawn four port a, port b, port c and port d from resonant cavity 1, resonant cavity 2 72, resonant cavity 3 73, resonant cavity 4 74 respectively through four road microstrip lines 12; As design example, the design of a logical hybrid ring of substrate integration wave-guide miniaturization band, processing and test, design bandwidth 400MHz at centre frequency 7.65GHz place.The dielectric substrate dielectric constant of selecting for use is 3.5, thickness 0.5mm, and loss angle tangent is 0.0018.The diameter of selected plated-through hole is 0.8mm, and spacing is 1.5mm.Port a feed, port b, the output of port d constant amplitude homophase; Port c feed, port b, port d constant amplitude anti-phase output; Port a and port c remain good.Test result shows that in the scope of 7.56GHz～7.79GHz, return loss all is superior to 15dB, and isolation is superior to 30dB, and average insertion loss 1.3dB, the unbalanced degree of amplitude are less than 0.42dB, and phase error has the outer inhibition of band preferably simultaneously less than 5.5 °.

The design principle of existing substrate integration wave-guide hybrid ring is consistent with the design principle of classical mixed ring; All realize phase place stack or phase cancellation through the different paths between input port and the output port; Realization constant amplitude homophase or constant amplitude are oppositely exported; Therefore the distance between input port and two output ports is 3/4ths guide wavelengths; Distance between another input port and two output ports is respectively 3/4ths and 5/4ths guide wavelengths, and at this moment, the length of whole hybrid ring need reach 3.5 times of guide wavelengths; The circuit area that is surrounded surpasses 1/2nd square wave guide wavelengths, and the ring center has a blank border circular areas to use; And the logical hybrid ring of the substrate integration wave-guide miniaturization band of present embodiment has adopted diverse design principle; It is the coupled resonator principle; Its shared circuit area is less than 1/4th square wave guide wavelengths, the integrated function of band pass filter in the implementation structure miniaturization; Present embodiment adopts four cavity resonator structure compact layout; Coupling coefficient between resonant cavity 1 and the resonant cavity 2 72 is M12; Coupling coefficient between resonant cavity 2 72 and the resonant cavity 3 73 is that the coupling coefficient between M23, resonant cavity 1 and the resonant cavity 4 74 is M14; Coupling coefficient between resonant cavity 3 73 and the resonant cavity 4 74 is M34, supposes that the external sort factor of resonant cavity 1, resonant cavity 2 72, resonant cavity 3 73, resonant cavity 4 74 is Qe, and the logical required relative bandwidth of operation of hybrid ring of substrate integration wave-guide miniaturization band is FBW; The normalization quality factor are qe=Qe * FBW, and then the normalized impedance matrix can be obtained by following formula:

$\left[\stackrel{\&OverBar;}{Z}\right]=\left[\begin{array}{cccc}\frac{1}{q_e}+p& -{\mathrm{<figure-callout\; id="12"\; label="jm"\; filenames="HDA0000102108600000012.png,HDA0000102108600000031.png"\; state="\{\{state\}\}">jm</figure-callout>}}_{12}& 0& -{\mathrm{jm}}_{14}\\ -{\mathrm{<figure-callout\; id="12"\; label="jm"\; filenames="HDA0000102108600000012.png,HDA0000102108600000031.png"\; state="\{\{state\}\}">jm</figure-callout>}}_{12}& \frac{1}{q_e}+p& -{\mathrm{jm}}_{23}& 0\\ 0& -j{m}_{23}& \frac{1}{q_e}+p& -{\mathrm{jm}}_{34}\\ -{\mathrm{<figure-callout\; id="14"\; label="jm"\; filenames="HDA0000102108600000012.png"\; state="\{\{state\}\}">jm</figure-callout>}}_{14}& 0& -{\mathrm{jm}}_{34}& \frac{1}{q_e}+p\end{array}\right]$

M12=M12/FBW wherein, m23=M23/FBW, m14=M14/FBW, m34=M34/FBW and

$p=\mathrm{<figure-callout\; id="1"\; label="j"\; filenames="HDA0000102108600000011.png,HDA0000102108600000022.png"\; state="\{\{state\}\}">j</figure-callout>}\frac{1}{\mathrm{FBW}}(\frac{\mathrm{\&omega;}}{{\mathrm{\&omega;}}_0}-\frac{{\mathrm{\&omega;}}_0}{\mathrm{\&omega;}})$

The scattering parameters of this structure is:

$\left[S_{11}\right]=1-\frac{2}{q_e}{\left[\stackrel{\&OverBar;}{Z}\right]}_{11}^{-1},$ $\left[S_{n1}\right]=\frac{2}{q_e}{\left[\stackrel{\&OverBar;}{Z}\right]}_{n1}^{-1},$ n＝2，3，4

Wherein represents capable, the j row of i in the normalized impedance inverse of a matrix matrix.Through the computer programming calculation scattering parameters, can find that this kind structure not only has the function of hybrid ring, the simultaneously integrated function of band pass filter.

Embodiment 2: like Fig. 4, Fig. 5, shown in Figure 6; The logical hybrid ring of a kind of substrate integration wave-guide miniaturization band comprises that first metal that stacks gradually from top to bottom covers copper layer 1, dielectric layer 4, second metal and covers copper layer 2, second dielectric layer 5, the 3rd metal and cover copper layer 3; In order to form the hybrid ring of the utility model; Through printed-circuit board manufacturing technology first metal is covered that copper layer 1, second metal cover copper layer 2, the 3rd metal covers copper layer 3 and is processed to form required metal pattern (circuit structure); Divide through virtual dotted line between the each several part in this pattern; To dielectric layer 4,5 punchings of second dielectric layer and surface metalation is done in the hole handled and form plated-through hole 6; Said first metal cover copper layer 1 comprise table section 11 on the substrate integration wave-guide, be positioned at table section 11 both sides and the two-way microstrip line 12 that is attached thereto on the substrate integration wave-guide, be positioned at inner microstrip line 12 both sides of table section on the substrate integration wave-guide 11 four groups of coupling slots 13, be positioned on the substrate integration wave-guide two horizontal rows on the table section 11 to, three arrange plated-through hole 6 longitudinally; Said plated-through hole 6 has run through that table section 11 on the substrate integration wave-guide, dielectric layer 4, second metal are covered copper layer 2, second dielectric layer 5 covers the copper layer with the 3rd metal and is connected; Form resonant cavity 1, resonant cavity 2 72, resonant cavity 3 73, resonant cavity 4 74; Said second metal cover copper layer 2 comprise corresponding to the coupling of resonant cavity one 71 centers circle 21, corresponding in resonant cavity 4 74 positions near the positive coupling groove 22 of two mirror images symmetries of plated-through hole 6; The size of said coupling circle 21 has determined the size of the electric coupling coefficient between resonant cavity 1, the resonant cavity 2 72; The position of said positive coupling groove 22 and size have determined the size of the magnetic coupling coefficient between resonant cavity 3 73, the resonant cavity 4 74; Said the 3rd metal covers copper layer 3 and comprises table section 31 under the substrate integration wave-guide, is positioned at table section 31 both sides and the 3rd layer of microstrip line 32 of two-way that is attached thereto under the substrate integration wave-guide, is positioned at four groups of the 3rd layer of coupling slots 33 of the 3rd layer of inner microstrip line 32 both sides of table section under the substrate integration wave-guide 31, and said resonant cavity one 71 resonant cavity 2 72 sizes are identical, and said resonant cavity 3 73 resonant cavity 4 74 sizes are identical; Said resonant cavity 1 is bigger than resonant cavity 3 73; Said plated-through hole 6 interrupts with coupling slot 13 places at microstrip line 12, forms the feed window, interrupts at the 3rd layer of microstrip line 32 and the 3rd layer of coupling slot 33 place; Form the feed window; The size of feed window and coupling slot 13 has determined the size of the external sort factor of resonant cavity 1, resonant cavity 4 74, and the size of feed window and the 3rd layer of coupling slot 33 has determined the size of the external sort factor of resonant cavity 2 72, resonant cavity 3 73, and the plated-through hole 6 at the juncture area place between said resonant cavity 1 and resonant cavity 4 74, resonant cavity 2 72 and the resonant cavity 3 73 interrupts; Form continuous coupled window, the size of continuous coupled window has determined the size of the magnetic coupling coefficient between resonant cavity 1 and resonant cavity 4 74, resonant cavity 2 72 and the resonant cavity 3 73.

The logical hybrid ring of the substrate integration wave-guide miniaturization band of the utility model adopts four cavity resonator structure compact layout, and utilizes five-layer structure further to dwindle circuit area based on the coupled resonator principle; According to the requirement of design objective, can confirm required external sort factor, magnetic coupling coefficient, electric coupling coefficient, and realize through corresponding circuit structure size; The directional coupler of said structure can be drawn port b, draw port a, draws port c, draws port d through the 3rd layer of microstrip line 32 from resonant cavity 3 73 from resonant cavity 2 72 through the 3rd layer of microstrip line 32 from resonant cavity 4 74 through microstrip line 12 from resonant cavity 1 through microstrip line 12.As design example, the design of a logical hybrid ring of substrate integration wave-guide miniaturization band, processing and test, bandwidth 250MHz at centre frequency 7.75GHz place.The dielectric substrate dielectric constant of selecting for use is 3.5, thickness 0.5mm, and loss angle tangent is 0.0018.The diameter of selected plated-through hole is 0.8mm, and spacing is 1.5mm.Port a feed, port b, the output of port d constant amplitude homophase; Port c feed, port b, port d constant amplitude anti-phase output; Port a and port c remain good.Test result shows that in the scope of 7.74GHz～7.89GHz, return loss all is superior to 15dB, and isolation is superior to 30dB, and average insertion loss 1.5dB, the unbalanced degree of amplitude are less than 0.56dB, and phase error has the outer inhibition of band preferably simultaneously less than 5 °.

The design principle of existing substrate integration wave-guide hybrid ring is consistent with the design principle of classical mixed ring; All realize phase place stack or phase cancellation through the different paths between input port and the output port; Realization constant amplitude homophase or constant amplitude are oppositely exported; Therefore the distance between input port and two output ports is 3/4ths guide wavelengths; Distance between another input port and two output ports is respectively 3/4ths and 5/4ths guide wavelengths, and at this moment, the length of whole hybrid ring need reach 3.5 times of guide wavelengths; The circuit area that is surrounded surpasses 1/2nd square wave guide wavelengths, and the ring center has a blank border circular areas to use; And the logical hybrid ring of the substrate integration wave-guide miniaturization band of present embodiment has adopted diverse design principle; It is the coupled resonator principle; Shared circuit area is less than 1/8th square wave guide wavelengths, in the implementation structure miniaturization, and the function of integrated belt bandpass filter; Present embodiment adopts four range upon range of compact layout of cavity resonator structure; Coupling coefficient between resonant cavity 1 and the resonant cavity 2 72 is M12; Coupling coefficient between resonant cavity 2 72 and the resonant cavity 3 73 is that the coupling coefficient between M23, resonant cavity 1 and the resonant cavity 4 74 is M14; Coupling coefficient between resonant cavity 3 73 and the resonant cavity 4 74 is M34, and the external sort factor of supposing resonant cavity 1, resonant cavity 2 72, resonant cavity 3 73, resonant cavity 4 74 is Qe, and the logical required relative bandwidth of operation of hybrid ring of substrate integration wave-guide miniaturization band is FBW; The normalization quality factor are qe=Qe * FBW, and then the normalized impedance matrix can be obtained by following formula:

$\left[\stackrel{\&OverBar;}{Z}\right]=\left[\begin{array}{cccc}\frac{1}{q_e}+p& -{\mathrm{<figure-callout\; id="12"\; label="jm"\; filenames="HDA0000102108600000012.png,HDA0000102108600000031.png"\; state="\{\{state\}\}">jm</figure-callout>}}_{12}& 0& -{\mathrm{jm}}_{14}\\ -{\mathrm{<figure-callout\; id="12"\; label="jm"\; filenames="HDA0000102108600000012.png,HDA0000102108600000031.png"\; state="\{\{state\}\}">jm</figure-callout>}}_{12}& \frac{1}{q_e}+p& -{\mathrm{jm}}_{23}& 0\\ 0& -j{m}_{23}& \frac{1}{q_e}+p& -{\mathrm{jm}}_{34}\\ -{\mathrm{<figure-callout\; id="14"\; label="jm"\; filenames="HDA0000102108600000012.png"\; state="\{\{state\}\}">jm</figure-callout>}}_{14}& 0& -{\mathrm{jm}}_{34}& \frac{1}{q_e}+p\end{array}\right]$

M12=M12/FBW wherein, m23=M23/FBW, m14=M14/FBW, m34=M34/FBW and

$p=\mathrm{<figure-callout\; id="1"\; label="j"\; filenames="HDA0000102108600000011.png,HDA0000102108600000022.png"\; state="\{\{state\}\}">j</figure-callout>}\frac{1}{\mathrm{FBW}}(\frac{\mathrm{\&omega;}}{{\mathrm{\&omega;}}_0}-\frac{{\mathrm{\&omega;}}_0}{\mathrm{\&omega;}})$

The scattering parameters of this structure is:

$\left[S_{11}\right]=1-\frac{2}{q_e}{\left[\stackrel{\&OverBar;}{Z}\right]}_{11}^{-1},$ $\left[S_{n1}\right]=\frac{2}{q_e}{\left[\stackrel{\&OverBar;}{Z}\right]}_{n1}^{-1},$ n＝2，3，4

Wherein

represents capable, the j row of i in the normalized impedance inverse of a matrix matrix.Through the computer programming calculation scattering parameters, can find that it has the function of hybrid ring, the simultaneously integrated function of band pass filter.

Those of ordinary skill in the art will appreciate that embodiment described here is in order to help the principle of reader understanding's the utility model, should to be understood that the protection range of the utility model is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not break away from the utility model essence according to disclosed these teachings of the utility model, and these distortion and combination are still in the protection range of the utility model.

Claims (2)

1. a substrate integration wave-guide miniaturization band leads to hybrid ring; It is characterized in that; Comprise that first metal that stacks gradually from top to bottom covers copper layer, dielectric layer, second metal and covers the copper layer; Said first metal cover the copper layer comprise table section on the substrate integration wave-guide, be positioned at table section both sides and four road microstrip lines that are attached thereto on the substrate integration wave-guide, be positioned at the inner microstrip line both sides of table section on the substrate integration wave-guide eight groups of coupling slots, be positioned at groove on the inner S shape of table section on the substrate integration wave-guide; Be positioned on the substrate integration wave-guide three horizontal rows on the table section to, three arrange plated-through hole longitudinally; Said plated-through hole has run through on the substrate integration wave-guide table section and has covered the copper layer with the dielectric layer and second metal and be connected, and forms resonant cavity one, resonant cavity two, resonant cavity three resonant cavity four; Said second metal covers the copper layer and comprises that being positioned at second metal covers groove under the inner S shape of copper layer, and said resonant cavity one resonant cavity two sizes are identical, and said resonant cavity three resonant cavity four sizes are identical; Said resonant cavity one is bigger than resonant cavity three; Said plated-through hole interrupts at microstrip line and coupling slot place, forms the feed window, and the plated-through hole at the juncture area place between said resonant cavity one and resonant cavity two, resonant cavity two and resonant cavity three, resonant cavity one and the resonant cavity four interrupts; Form continuous coupled window; The plated-through hole at the juncture area place between said resonant cavity three and the resonant cavity four interrupts, and forms three groups discrete coupling window, and groove is since the center line of first group of discrete coupling window on the said S shape; Pass through second group of middle discrete coupling window with S shape; Terminate in the center line of the 3rd group of discrete coupling window, groove passes through second group of middle discrete coupling window since the center line of first group of discrete coupling window with S shape under the said S shape; Terminate in the center line of the 3rd group of discrete coupling window, under the said S shape trend of groove and S shape on the trend of groove symmetrical about the center line mirror image of the coupling window that disperses.

2. a substrate integration wave-guide miniaturization band leads to hybrid ring; It is characterized in that; Comprise that first metal that stacks gradually from top to bottom covers copper layer, dielectric layer, second metal and covers copper layer, second dielectric layer, the 3rd metal and cover the copper layer; Said first metal cover the copper layer comprise table section on the substrate integration wave-guide, be positioned at table section both sides and the two-way microstrip line that is attached thereto on the substrate integration wave-guide, be positioned at the inner microstrip line both sides of table section on the substrate integration wave-guide four groups of coupling slots, be positioned on the substrate integration wave-guide two horizontal rows on the table section to, three arrange plated-through hole longitudinally; Said plated-through hole has run through that table section on the substrate integration wave-guide, dielectric layer, second metal are covered the copper layer, second dielectric layer covers the copper layer with the 3rd metal and is connected, and forms resonant cavity one, resonant cavity two, resonant cavity three resonant cavity four; Said second metal cover the copper layer comprise corresponding to the coupling of resonant cavity one center circle, corresponding in resonant cavity four positions near the positive coupling groove of two mirror images symmetries of plated-through hole; Said the 3rd metal covers that the copper layer comprises table section under the substrate integration wave-guide, is positioned at table section both sides under the substrate integration wave-guide and the 3rd layer of microstrip line of two-way that is attached thereto, four groups of the 3rd layer of coupling slots of the 3rd layer of microstrip line both sides being positioned at substrate integration wave-guide following table intra-zone; Said resonant cavity one resonant cavity two sizes are identical; Said resonant cavity three resonant cavity four sizes are identical; Said resonant cavity one is bigger than resonant cavity three, and said plated-through hole interrupts at microstrip line and coupling slot place, forms the feed window; Interrupt at the 3rd layer of microstrip line and the 3rd layer of coupling slot place; Form the feed window, the plated-through hole at the juncture area place between said resonant cavity one and resonant cavity four, resonant cavity three and the resonant cavity two interrupts, and forms continuous coupled window.

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