CN202259438U - Semiconductor lighting device with silver-tin welding electrodes - Google Patents
Semiconductor lighting device with silver-tin welding electrodes Download PDFInfo
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- CN202259438U CN202259438U CN2011204074044U CN201120407404U CN202259438U CN 202259438 U CN202259438 U CN 202259438U CN 2011204074044 U CN2011204074044 U CN 2011204074044U CN 201120407404 U CN201120407404 U CN 201120407404U CN 202259438 U CN202259438 U CN 202259438U
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- semiconductor lighting
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Abstract
The utility model discloses a semiconductor lighting device with silver-tin welding electrodes, which comprises a semiconductor lighting overlay provided with a first surface and a second surface, wherein a P-type ohmic electrode and an N-type ohmic electrode are formed on the first surface of the semiconductor lighting overlay, and a layer of support substrates are formed on the upward second surface of the semiconductor lighting overlay. The semiconductor lighting device with the silver-tin welding electrodes is characterized in that on the first surface of the semiconductor lighting overlay, the N-type ohmic electrode is connected with an N-type welding electrode manufactured by silver-tin materials, and the P-type ohmic electrode is connected with a P-type welding electrode manufactured by the silver-tin materials, namely the P-type welding electrode and the N-type welding electrode are formed on the first surface of the semiconductor lighting overlay. The P-type welding electrode and the N-type welding electrode cover at least 50% of the area of the first surface of the semiconductor lighting overlay. The semiconductor lighting device with the silver-tin welding electrodes has the advantages of greatly reducing manufacture cost and having high light extraction efficiency and good radiating performance, and overcomes defects of high manufacture cost of existing flip chips in the market.
Description
Technical field
The utility model relates to light emitting semiconductor device, relates in particular to a kind of light emitting semiconductor device with silver-colored soldering receiving electrode.
Background technology
Light-emitting diode (LED) has purposes widely, along with the raising of its luminous efficiency and the continuous decline of manufacturing cost, has begun to get into illumination market in recent years, and market scale constantly enlarges.The LED of high brightness generally makes with indium-gallium-aluminum-nitrogen or indium gallium aluminium phosphorus semi-conducting material; Wherein the indium-gallium-aluminum-nitrogen semiconductor material can be made blueness, green and ultraviolet LED; Use the blue-light-emitting chip to be equipped with yellow fluorescent powder and can produce White LED, this is the main preparation methods of current illuminating LED.LED illuminating lamp based on the indium-gallium-aluminum-nitrogen semiconductor material; Though had higher luminous efficiency, yet for the requirement of illumination, cost is still very high; Be that the cost that every lumen of light spends also needs to descend significantly, just can make the LED illuminating lamp replace existing lighting at large.In order to reach this purpose, need the luminous efficiency of led chip be improved from two aspect effort, the manufacturing cost of led chip is descended.
The approach that improves the LED luminous efficiency has multiple, wherein a kind of approach be exactly chip design become inverted structure (be P type welding Ohmic electrode with N type welding electrode all in the bottom of chip, the surface of chip does not but have welding electrode) with the raising light extraction efficiency.The chip of this inverted structure has optical efficiency height, the characteristics that heat dissipation characteristics is good of getting.Encapsulation for ease, the low-melting gold-tin alloy material of the general employing of the pad of the welding electrode of this chip.Because the very expensive of gold-tin alloy material causes the manufacturing cost of this chip higher.
Summary of the invention
The purpose of the utility model is to provide a kind of light emitting semiconductor device with silver-colored soldering receiving electrode; This light emitting semiconductor device adopts silver-colored ashbury metal rather than gold-tin alloy to make welding electrode, makes the manufacturing cost of this chip significantly be lower than the chip that adopts gold-tin alloy.
The purpose of the utility model is achieved in that
A kind of light emitting semiconductor device with silver-colored soldering receiving electrode; Comprise: semiconductor light emitting lamination with first surface and second surface; On the first surface of semiconductor light emitting lamination, form P type Ohmic electrode and N type Ohmic electrode; Form one deck supporting substrate at semiconductor light emitting lamination second surface up, characteristic is: on the first surface of semiconductor light emitting lamination, N type Ohmic electrode links to each other with the N type welding electrode that uses silver-colored tin material preparation; P type Ohmic electrode links to each other with the P type welding electrode that uses silver-colored tin material preparation, and promptly the first surface at the semiconductor light emitting lamination forms P type welding electrode and N type welding electrode.
Described P type welding electrode and N type welding electrode cover the area of the first surface 50% of semiconductor light emitting lamination at least.
The luminescent device of the utility model has inverted structure; Be on the same surface of semiconductor light emitting lamination (being first surface) between P type Ohmic electrode and the N type Ohmic electrode; Make P type welding electrode and N type welding electrode also at the first surface of semiconductor light emitting lamination; And main exiting surface is another surface (being second surface), and the luminescence chip of this inverted structure has the advantages that to get optical efficiency height, perfect heat-dissipating.And the chip of the utility model adopts silver-colored ashbury metal rather than gold-tin alloy to make welding electrode, makes the manufacturing cost of this chip significantly be lower than the chip that adopts gold-tin alloy.
The shape of P type welding electrode and N type welding electrode can be provided with arbitrarily in principle, but can not directly be communicated with between them, otherwise will cause the device short circuit.This pressure welding electrode need have enough thickness, and to guarantee its weldability, its thickness is greater than 1 micron generally speaking.This pad preparation method can be that electron beam/thermal resistance evaporation also can be methods such as plating.
Therefore, the utlity model has the characteristics that significantly reduce manufacturing cost, get optical efficiency height, perfect heat-dissipating, overcome the higher shortcoming of the manufacturing cost of existing flip-chip on the market.
Description of drawings
Fig. 1 is the cross-sectional view of the utility model;
Fig. 2 is the welding electrode floor map of the utility model.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the method for the utility model is further explained.
See figures.1.and.2.This light emitting semiconductor device has n type gallium nitride layer 1.1 (being N type conductive layer), indium gallium nitrogen multiple quantum well layer 1.2 and the P type gallium nitride layer 1.3 (being the P-type conduction layer) that constitutes the semiconductor light emitting lamination.In P type gallium nitride layer 1.3, have some circular holes (N electrode hole), the P type gallium nitride layer 1.3 in the circular hole is removed with indium gallium nitrogen multiple quantum well layer 1.2, and n type gallium nitride layer 1.1 goes directly in the bottom of circular hole.P type gallium nitride layer 1.3 surface (being the first surface of semiconductor light emitting lamination) down has one deck silver reflection Ohmic electrode 1.4 (being P type Ohmic electrode); On silver reflection Ohmic electrode 1.4, cover layer protective layer 1.5, this protective layer 1.5 coats silver reflection Ohmic electrode 1.4 fully but can not be distributed on the surface of the n type gallium nitride layer 1.1 in the circular hole.On protective layer 1.5, be stamped one deck silicon nitride insulating film 1.6 (being insulation material layer), this insulation material layer all coats the edge of above-mentioned protective layer 1.5, but has some apertures in the zone of the N electrode hole that do not distribute, and the bottom-exposed of aperture goes out protective layer 1.5.The N electrode 1.7 (being N type Ohmic electrode) that one aluminium/titanium/gold/platinum/nickel sandwich construction is arranged in the N electrode hole.Silicon nitride insulating film 1.6 with one deck N weld layer 1.8 (being N type welding electrode) is arranged above the N electrode 1.7, the flat shape of N weld layer 1.8 is as shown in Figure 2.On silicon nitride insulating film 1.6 and P electrode hole, one deck P weld layer 1.9 (being P type welding electrode) is arranged, the flat shape of P weld layer 1.9 as shown in Figure 2.On n type gallium nitride layer 1.1 surface (being the second surface of semiconductor light emitting lamination) up, a transparent supporting substrate 1.10 is arranged.
Claims (2)
1. light emitting semiconductor device with silver-colored soldering receiving electrode; Comprise: semiconductor light emitting lamination with first surface and second surface; On the first surface of semiconductor light emitting lamination, form P type Ohmic electrode and N type Ohmic electrode; Form one deck supporting substrate at semiconductor light emitting lamination second surface up, it is characterized in that: on the first surface of semiconductor light emitting lamination, N type Ohmic electrode links to each other with the N type welding electrode that uses silver-colored tin material preparation; P type Ohmic electrode links to each other with the P type welding electrode that uses silver-colored tin material preparation, and promptly the first surface at the semiconductor light emitting lamination forms P type welding electrode and N type welding electrode.
2. light emitting semiconductor device according to claim 1 is characterized in that: described P type welding electrode and N type welding electrode cover the area of semiconductor light emitting lamination first surface 50% at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204074044U CN202259438U (en) | 2011-10-24 | 2011-10-24 | Semiconductor lighting device with silver-tin welding electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204074044U CN202259438U (en) | 2011-10-24 | 2011-10-24 | Semiconductor lighting device with silver-tin welding electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202259438U true CN202259438U (en) | 2012-05-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204074044U Expired - Lifetime CN202259438U (en) | 2011-10-24 | 2011-10-24 | Semiconductor lighting device with silver-tin welding electrodes |
Country Status (1)
| Country | Link |
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| CN (1) | CN202259438U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546303A (en) * | 2017-08-25 | 2018-01-05 | 扬州乾照光电有限公司 | A kind of AlGaInP based light-emitting diodes and its manufacture method |
-
2011
- 2011-10-24 CN CN2011204074044U patent/CN202259438U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546303A (en) * | 2017-08-25 | 2018-01-05 | 扬州乾照光电有限公司 | A kind of AlGaInP based light-emitting diodes and its manufacture method |
| CN107546303B (en) * | 2017-08-25 | 2019-06-21 | 扬州乾照光电有限公司 | A kind of AlGaInP based light-emitting diode and its manufacturing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: NANCHANG UNIVERSITY Effective date: 20130910 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 330047 NANCHANG, JIANGXI PROVINCE TO: 330029 NANCHANG, JIANGXI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130910 Address after: 330029 Jiangxi high tech Zone, Nanchang hi tech Road, No. seven, No. 192 Patentee after: Nanchang Huanglv Lighting Co., Ltd. Patentee after: Nanchang University Address before: 330047 No. seven, No. 192, hi tech Zone, Nanchang hi tech Zone, Jiangxi Patentee before: Nanchang Huanglv Lighting Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120530 |
|
| CX01 | Expiry of patent term |