CN202256597U - Box for testing parameters of metal oxide semiconductor field effect tube - Google Patents
Box for testing parameters of metal oxide semiconductor field effect tube Download PDFInfo
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- CN202256597U CN202256597U CN 201120319249 CN201120319249U CN202256597U CN 202256597 U CN202256597 U CN 202256597U CN 201120319249 CN201120319249 CN 201120319249 CN 201120319249 U CN201120319249 U CN 201120319249U CN 202256597 U CN202256597 U CN 202256597U
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Abstract
The utility model relates to a box for testing parameters of a metal oxide semiconductor field effect tube. The box for testing the parameters of the metal oxide semiconductor field effect tube comprises a gear-shifting switch and a plurality of relays, wherein each relay is matched with a tested parameter; one end of a contact of each relay is connected with one of graphic instrument signal end interfaces or one interface of a testing pin wire-connecting terminal according to wire-connecting requirements of the matched tested parameter; the other end of the contact is connected with one of the graphic instrument signal end interfaces or one interface of the testing pin wire-connecting terminal; one end of a coil of each relay is connected with a power supply; the other end of the coil is selectively connected with the gear-shifting switch; one end of the gear-shifting switch is grounded; and the other end of the gear-shifting switch selects the tested parameter by being selectively connected with the other end of the coil of one of the plurality of relays. The gear-shifting switch and the relays are matched, so that the box for testing the parameters of the metal oxide semiconductor field effect tube is easy to operate, can switch the testing of various parameters quickly, is low in manufacturing cost, and can test a large-power product by being connected to large current.
Description
[technical field]
The utility model relates to a kind of proving installation, relates in particular to a kind of metal oxide semiconductor field effect tube parameter testing box.
[background technology]
When using graphic instrument to measure and observing the family curve of metal oxide semiconductor field effect tube (MOSFET), carry out the test of the different test parameters of same MOSFET, comprise V
TH(threshold voltage), V
GS(gate source voltage), BV
DS(breakdown reverse voltage between drain-source), V
FSD(source-drain electrode forward voltage drop), R
DS(drain-source resistance).When switching different test parameters, need change a large amount of jack-plug sockets at the signal end interface of graphic instrument, test job efficient is very low, and the wiring workload is big, and easy wrong line.
[utility model content]
Based on this, be necessary to provide a kind of simple to operate, metal oxide semiconductor field effect tube parameter testing box that can between the test of each parameter, switch fast.
A kind of metal oxide semiconductor field effect tube parameter testing box comprises fork shift switch and relay module; Said relay module comprises a plurality of relays; Each relay and a test parameter coupling; One end of the contact of each relay require to connect the interface of terminals of interface or testing needle of the signal end interface of graphic instrument according to the wiring of the said test parameter of coupling, the other end of contact connects the interface of terminals of interface or testing needle of the signal end interface of graphic instrument; One end of the coil of each relay is used to connect power supply, and the other end of coil supplies said fork shift switch to select to connect; Said fork shift switch one end ground connection, the other end of said fork shift switch are used for selecting said test parameter through the other end of the coil of one of them relay of selecting a plurality of relays of connection.
Preferably; Said test parameter is a threshold voltage; Said relay module comprises first relay; The first normally opened contact two ends of said first relay connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said first relay connect the G mouth and the D mouth of the terminals of testing needle respectively, and the 3rd normally opened contact two ends of said first relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively.
Preferably; Said test parameter is a breakdown reverse voltage between drain-source; Said relay module comprises second relay; The first normally opened contact two ends of said second relay connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively; The second normally opened contact two ends of said second relay connect the G mouth and the S mouth of the terminals of testing needle respectively, and the 3rd normally opened contact two ends of said second relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively.
Preferably; Said test parameter is a gate source voltage; Said relay module comprises the 3rd relay; The first normally opened contact two ends of said the 3rd relay connect the G mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said the 3rd relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively.
Preferably; Said test parameter is the source-drain electrode forward voltage drop; Said relay module comprises the 4th relay; The first normally opened contact two ends of said the 4th relay connect the S mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively; The second normally opened contact two ends of said the 4th relay connect the D mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively; The 3rd normally opened contact two ends of said the 4th relay connect the S ' mouth of terminals of C ' mouth and testing needle of the signal end interface of graphic instrument respectively, and the 4th normally opened contact two ends of said the 4th relay connect the D ' mouth of terminals of E ' mouth and testing needle of the signal end interface of graphic instrument respectively.
Preferably; Said test parameter is a drain-source resistance; Said relay module comprises the 5th relay and the 6th relay; The first normally opened contact two ends of said the 5th relay connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively; The second normally opened contact two ends of said the 5th relay connect the G mouth of terminals of B mouth and testing needle of the signal end interface of graphic instrument respectively; The 3rd normally opened contact two ends of said the 5th relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively; The first normally opened contact two ends of said the 6th relay connect the D ' mouth of terminals of C ' mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said the 6th relay connect the S ' mouth of terminals of E ' mouth and testing needle of the signal end interface of graphic instrument respectively.
Above-mentioned metal oxide semiconductor field effect tube parameter testing box, the mode that adopts fork shift switch and relay to be used, simple to operate, can between the test of each parameter, switch (realizing switching) fast through rotation fork shift switch.The equipment making cost is low, can be through the test of big electric current, the high-power product of realization.
[description of drawings]
Fig. 1 is the synoptic diagram of the signal end interface of graphic instrument;
Fig. 2 is the synoptic diagram of terminals of the testing needle of test MOS FET;
Fig. 3 is the syndeton synoptic diagram of metal oxide semiconductor field effect tube parameter testing box among the embodiment;
Fig. 4 is the syndeton synoptic diagram of metal oxide semiconductor field effect tube parameter testing box among another embodiment;
Fig. 5 is that the circuit of first relay K 1 connects synoptic diagram.
[embodiment]
For purpose, the feature and advantage that make the utility model can be more obviously understandable, the embodiment of the utility model is done detailed explanation below in conjunction with accompanying drawing.
Fig. 1 is the synoptic diagram of the signal end interface of graphic instrument, and the signal end interface of graphic instrument comprises C (collector) mouth, B (base stage) mouth, E (emitter) mouthful C ' mouth and E ' mouth.Fig. 2 is the synoptic diagram of terminals of the testing needle of test MOS FET, and the terminals of testing needle (being the production tube socket) comprise D (drain electrode) mouthful, G (grid) mouthful, S (source electrode) mouthful, D ' mouth and S ' mouth.In test, adopt Kelvin to connect method (Kelvin connections), when interface band " ' " (for example C ') expression adopts Kelvin to connect method in two p-wires of one utmost point second, effect is to offset p-wire resistance and contact resistance.Graphic instrument can adopt models such as QT-2, TEK-370B.
Fig. 3 is the syndeton synoptic diagram of metal oxide semiconductor field effect tube parameter testing box among the embodiment, and metal oxide semiconductor field effect tube parameter testing box 100 comprises fork shift switch and relay module.The relay module comprises a plurality of relays; Each relay and a test parameter coupling; The two ends of a contact of each relay require to connect respectively the interface (two distinct interfaces that perhaps connect the terminals of testing needle) of terminals of interface and testing needle of the signal end interface of graphic instrument according to the wiring of test parameter; Coil one end of each relay is used to connect power supply, and the other end supplies the fork shift switch to select to connect.Fork shift switch one end ground connection, the other end of fork shift switch are used for selecting test parameter through an end of selecting connecting coil.
With needs test V
TH(threshold voltage), BV
DS(breakdown reverse voltage between drain-source), V
GS(gate source voltage), V
FSD(source-drain electrode forward voltage drop), R
DS(drain-source resistance) these five parameters are example, and wiring requires as follows:
| Test event | The wiring requirement |
| V TH | ?C------D ，G------D ，E-------S |
| BV DS | ?C------D ，G-------S ，E-------S |
| V GS | ?C-----G ，E------S |
| V FSD | ?C------S ，E-------D ，C′------S′，E′-------D′ |
| R DS | C-----D ，B-------G ，E--------S ，C′-------D′，E′--------S′ |
Fig. 4 is the syndeton synoptic diagram of metal oxide semiconductor field effect tube parameter testing box among another embodiment, comprises one 5 grades rotatable fork shift switch and first relay K, 1～K6 of 64 tunnel.Fork shift switch one end ground connection, the other end are used to select gear (being test parameter).The two ends of the coil of each relay connect a grade in power supply and 5 gears of fork shift switch respectively; Each normally opened contact two ends of each relay connect the interface of terminals of interface and testing needle of the signal end interface of graphic instrument respectively, perhaps connect two distinct interfaces of the terminals of testing needle.In addition, owing to be not to survey each parameter all will connect 4 interfaces, so the relay contact two ends of part are unsettled.
Wiring with first relay K 1 is that example is explained wiring construction again through circuit diagram; Fig. 5 is that the circuit of first relay K 1 connects synoptic diagram; First relay K 1 comprises the first normally opened contact K11, the second normally opened contact K13, the 3rd normally opened contact K15 (do not show among unsettled normally opened contact K17 Fig. 5, repeat no more) and coil K12 here.The first normally opened contact K11 two ends connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively; The second normally opened contact K13 two ends connect the G mouth and the D mouth of the terminals of testing needle respectively, and the 3rd normally opened contact K15 two ends connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively; The termination power of coil K12 (being the direct supply of 24V in this enforcement), the other end is unsettled.When the fork shift switch is chosen V
THWhen shelves, the unsettled end of coil K12 is because of selected ground connection, so coil powers on, and normally opened contact K11, K13, K15 are all closed, are equivalent to C------D, G------D, and E-------S is communicated with respectively.
It should be noted that measure R
DSThe time need connect 5 ports, and what adopt in the present embodiment is 4 tunnel relay, therefore needs to adopt the mode of 4-1 or 3-2 to accomplish line jointly through two relays.Relay C-----D for example, B-------G, E--------S; Another relay C '--------D ', E '--------S '.And the coil of two relays interconnects.What adopt in the present embodiment is that the model that Omron Corp produces is No. 4 relays of MY-4, also can adopt the relay of other ways, other models in other embodiments.
In one embodiment, normally opened contact one termination power, other end ground connection that can also relay is unsettled, and serial connection pilot lamp be used for when corresponding test parameter is selected, indicating.
Above-mentioned metal oxide semiconductor field effect tube parameter testing box adopts fork shift switch and six modes that relay is used of five grades, and is simple to operate, can be between the test of each parameter switch (can realize switching through rotation fork shift switch) fast.The equipment making cost is low, can be through the test of big electric current, the high-power product of realization.
The above embodiment has only expressed several kinds of embodiments of the utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to the protection domain of the utility model.Therefore, the protection domain of the utility model patent should be as the criterion with accompanying claims.
Claims (6)
1. a metal oxide semiconductor field effect tube parameter testing box is characterized in that, comprises fork shift switch and relay module;
Said relay module comprises a plurality of relays; Each relay and a test parameter coupling; One end of the contact of each relay require to connect the interface of terminals of interface or testing needle of the signal end interface of graphic instrument according to the wiring of the said test parameter of coupling, the other end of contact connects the interface of terminals of interface or testing needle of the signal end interface of graphic instrument; One end of the coil of each relay is used to connect power supply, and the other end of coil supplies said fork shift switch to select to connect;
Said fork shift switch one end ground connection, the other end of said fork shift switch are used for selecting said test parameter through the other end of the coil of one of them relay of selecting a plurality of relays of connection.
2. metal oxide semiconductor field effect tube parameter testing box according to claim 1; It is characterized in that; Said test parameter is a threshold voltage; Said relay module comprises first relay; The first normally opened contact two ends of said first relay connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said first relay connect the G mouth and the D mouth of the terminals of testing needle respectively, and the 3rd normally opened contact two ends of said first relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively.
3. metal oxide semiconductor field effect tube parameter testing box according to claim 1; It is characterized in that; Said test parameter is a breakdown reverse voltage between drain-source; Said relay module comprises second relay; The first normally opened contact two ends of said second relay connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said second relay connect the G mouth and the S mouth of the terminals of testing needle respectively, and the 3rd normally opened contact two ends of said second relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively.
4. metal oxide semiconductor field effect tube parameter testing box according to claim 1; It is characterized in that; Said test parameter is a gate source voltage; Said relay module comprises the 3rd relay, and the first normally opened contact two ends of said the 3rd relay connect the G mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said the 3rd relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively.
5. metal oxide semiconductor field effect tube parameter testing box according to claim 1; It is characterized in that; Said test parameter is the source-drain electrode forward voltage drop; Said relay module comprises the 4th relay; The first normally opened contact two ends of said the 4th relay connect the S mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively; The second normally opened contact two ends of said the 4th relay connect the D mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively, and the 3rd normally opened contact two ends of said the 4th relay connect the S ' mouth of terminals of C ' mouth and testing needle of the signal end interface of graphic instrument respectively, and the 4th normally opened contact two ends of said the 4th relay connect the D ' mouth of terminals of E ' mouth and testing needle of the signal end interface of graphic instrument respectively.
6. metal oxide semiconductor field effect tube parameter testing box according to claim 1; It is characterized in that; Said test parameter is a drain-source resistance; Said relay module comprises the 5th relay and the 6th relay; The first normally opened contact two ends of said the 5th relay connect the D mouth of terminals of C mouth and testing needle of the signal end interface of graphic instrument respectively; The second normally opened contact two ends of said the 5th relay connect the G mouth of terminals of B mouth and testing needle of the signal end interface of graphic instrument respectively; The 3rd normally opened contact two ends of said the 5th relay connect the S mouth of terminals of E mouth and testing needle of the signal end interface of graphic instrument respectively, and the first normally opened contact two ends of said the 6th relay connect the D ' mouth of terminals of C ' mouth and testing needle of the signal end interface of graphic instrument respectively, and the second normally opened contact two ends of said the 6th relay connect the S ' mouth of terminals of E ' mouth and testing needle of the signal end interface of graphic instrument respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120319249 CN202256597U (en) | 2011-08-29 | 2011-08-29 | Box for testing parameters of metal oxide semiconductor field effect tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120319249 CN202256597U (en) | 2011-08-29 | 2011-08-29 | Box for testing parameters of metal oxide semiconductor field effect tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202256597U true CN202256597U (en) | 2012-05-30 |
Family
ID=46117816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120319249 Expired - Fee Related CN202256597U (en) | 2011-08-29 | 2011-08-29 | Box for testing parameters of metal oxide semiconductor field effect tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202256597U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847837A (en) * | 2018-05-29 | 2018-11-20 | 广州赛宝计量检测中心服务有限公司 | Signal adapter |
| CN112098799A (en) * | 2020-11-09 | 2020-12-18 | 四川立泰电子有限公司 | Alternating current dynamic parameter test calibration device and method for MOSFET device |
-
2011
- 2011-08-29 CN CN 201120319249 patent/CN202256597U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847837A (en) * | 2018-05-29 | 2018-11-20 | 广州赛宝计量检测中心服务有限公司 | Signal adapter |
| CN112098799A (en) * | 2020-11-09 | 2020-12-18 | 四川立泰电子有限公司 | Alternating current dynamic parameter test calibration device and method for MOSFET device |
| CN112098799B (en) * | 2020-11-09 | 2021-02-12 | 四川立泰电子有限公司 | Alternating current dynamic parameter test calibration device and method for MOSFET device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20160829 |