CN202230975U - Process chamber capable of uniformly pumping - Google Patents
Process chamber capable of uniformly pumping Download PDFInfo
- Publication number
- CN202230975U CN202230975U CN201120346714XU CN201120346714U CN202230975U CN 202230975 U CN202230975 U CN 202230975U CN 201120346714X U CN201120346714X U CN 201120346714XU CN 201120346714 U CN201120346714 U CN 201120346714U CN 202230975 U CN202230975 U CN 202230975U
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- Prior art keywords
- treatment chamber
- pedestal
- evenly
- bleed
- process chamber
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Abstract
The utility model relates to a process chamber capable of uniformly pumping. A reaction gas is guided into the chamber and made into a plasma at the vacuum state and a wafer surface is processed. The process chamber comprises a base with a dielectric layer on the top and used for bearing a wafer; a plurality of feeding pipes, respectively connected with the base from the lower part and uniformly distributed on the perimeter of the base; a vacuum pump used for pumping the gas to vacuumize the process chamber and arranged in the middle position of the bottom of the process chamber. Because each feeding pipe connected with the base is only used for introducing one of an electric circuit, a helium gas channel and a cooling medium channel and compared with the prior feeding pipe for simultaneously introducing three channels, the occupied space of each feeding pipe in the process chamber is reduced a lot. In addition, because the three feeding pipes are uniformly distributed in the process chamber, the vacuum pump in the middle position of the bottom of the process chamber can uniformly pump the gas and the work efficiency of the process chamber is ensured.
Description
Technical field
The utility model relates to a kind of treatment chamber that plasma is handled semiconductor device that is used to produce, and particularly a kind ofly can evenly aspirate the wherein treatment chamber of gas.
Background technology
At present in manufacture process to semiconductor device etc.; Usually wafer is placed on the pedestal of treatment chamber of vacuum; In the electrode at pedestal top, apply radio frequency, make the plasma that in treatment chamber, forms the reacting gas of introducing carry out processed wafer.Operated by rotary motion has helium passages in this pedestal, and helium is fed wafer rear, carries out the control of wafer temperature.Also be provided with coolant guiding channel in the pedestal,, base-plate temp controlled through carrying out heat exchange with the cooling fluid of wherein flowing through.
As shown in Figure 1; Be existing a kind of treatment chamber 100, wherein be used to apply the electric wiring 132 of radio frequency, with helium passages 131, coolant guiding channel 133; After feed tube road 130 entering of treatment chamber 100 bottoms setting, be connected with the mounting platform 111 at pedestal 110 tops.Yet this kind structural design makes the vacuum pump 120 that is used for gas pumping in the treatment chamber 100, can only be placed on a side in feed tube road 130, causes the inhomogeneous of treatment chamber 100 interior gas pumpings, and then influences the efficient of treatment chamber 100 work.
As shown in Figure 2; It is existing another kind of treatment chamber 100; Its feed tube road 130 openings that will place electric wiring 132, helium passages 131, coolant guiding channel 132 are arranged on the sidewall of treatment chamber 100, make vacuum pump 120 can be set at the centre position of treatment chamber 100 bottoms.But the setting in this feed tube road 130 has occupied very large space, still can hinder the gas flow in (like Fig. 2 upper right side) in the treatment chamber 100, causes the inhomogeneous of gas pumping, and influences the operating efficiency of treatment chamber 100.
The utility model content
The purpose of the utility model provides a kind of treatment chamber that can evenly bleed; Vacuum pump is arranged on the centre position, bottom of treatment chamber; And through be provided with some less, independently the feed tube road places respectively electric wiring, helium passages, coolant guiding channel; Make gas pumping even, thereby guarantee the operating efficiency of treatment chamber.
In order to achieve the above object, the technical scheme of the utility model provides a kind of treatment chamber that can evenly bleed, is operated under the vacuum state, and the reacting gas of introducing is wherein processed plasma, is used for crystal column surface is handled, and comprises:
Pedestal, its top is provided with mounting platform and carries said wafer;
Some feed tubes road is evenly distributed on pedestal on every side with supporting base;
And, be used for intake-gas, make said treatment chamber form the vacuum pump of vacuum, it is arranged on the centre position, bottom of said treatment chamber.
In one embodiment, said some feed tubes road is respectively at the treatment chamber bottom opening, and is evenly distributed between base bottom and the treatment chamber bottom.
In another embodiment, said some feed tubes road is respectively at the treatment chamber sidewall opening, and is evenly distributed between pedestal sidewall and the treatment chamber sidewall.
Said feed tube is equipped with electric wiring in the road, and it sends electric energy into pedestal outside treatment chamber.
Be provided with electrode in the mounting platform of said pedestal; Said electric wiring is connected with said electrode, and it is applied radio frequency, makes the plasma that in said treatment chamber, forms said reacting gas.
Said feed tube is equipped with coolant channel in the road.
Said cooling agent is a helium, and it is introduced between said wafer and the mounting platform via said coolant channel, cools off from the back side to said wafer.
Perhaps, said cooling agent comprises cooling fluid.
A kind of treatment chamber that can evenly bleed is operated under the vacuum state, and the reacting gas of introducing is wherein processed plasma, is used for crystal column surface is handled, and comprises:
Pedestal, its top is provided with mounting platform and carries said wafer;
An air extractor is positioned at the pedestal below;
A bracing or strutting arrangement, a plurality of supports through being provided with support said pedestal, and make said pedestal be fixed to treatment chamber, and wherein said a plurality of supports are fixed on the exhaust space of evenly cutting apart between treatment chamber and the pedestal between pedestal and the treatment chamber sidewall.
Comprise the electric wiring that is used for power delivery in said a plurality of support, and be used for temperature controlled fluid-transporting tubing.
In the said treatment chamber that can evenly bleed of the utility model; Because each feed tube road that is connected with pedestal; Preferably only be used for introducing a kind of in electric wiring, helium passages and the coolant guiding channel; Compare the existing feed tube road that need introduce three passages simultaneously, the space that each feed tube road occupies in treatment chamber in the utility model has dwindled a lot.And, because three feed tube roads are evenly distributed in the treatment chamber, therefore, be arranged on evenly intake-gas of the middle vacuum pump in treatment chamber bottom, guarantee the operating efficiency of treatment chamber.
Description of drawings
Fig. 1 is the structural representation that existing a kind of feed tube road is placed on the middle treatment chamber in bottom.
Fig. 2 is the structural representation that existing another kind of vacuum pump is placed on the middle treatment chamber in bottom.
Fig. 3 is the structure side view of the said treatment chamber that can evenly bleed of the utility model.
Fig. 4 is the structure vertical view of the said treatment chamber that can evenly bleed of the utility model.
Fig. 5 is the another kind of structure side view of the said treatment chamber that can evenly bleed of the utility model.
Embodiment
Embodiment below in conjunction with description of drawings the utility model.
Cooperation is referring to Fig. 3, shown in Figure 4, and the utility model provides a kind of treatment chamber that can evenly bleed 200.In treatment chamber 200, be provided with a round base 210, its end face is provided with mounting platform 211 and carries wafer.
Three feed tube roads 230 are connected with this pedestal 210 from the below, and arranged evenly around pedestal 210, evenly divide pedestal 210 circumference.These three feed tube roads 230 also are provided with opening in the bottom surface of treatment chamber 200 respectively; Make electric wiring 232, helium passages 231 and coolant guiding channel 233; Get into via these three openings respectively from treatment chamber 200 belows; And after in said three feed tube roads 230, passing respectively, be connected with the dielectric layer 211 at said pedestal 210 tops.
Wherein, electric wiring 232 is used for the electrode that mounting platform 211 is buried underground is applied radio frequency, in treatment chamber 200, the reacting gas of introducing is processed its plasma, and the said crystal column surface that is placed on the mounting platform 211 is handled.Helium passages 231 is introduced into the back side of wafer with helium, and wafer is cooled off.Coolant guiding channel 233 is lowered the temperature to pedestal 210 through the cooling fluid of wherein flowing through.
The centre position, bottom of treatment chamber 200, the below of pedestal 210 are provided with vacuum pump 220, are used for intake-gas, make treatment chamber 200 when operate as normal, be in vacuum state.
Above-mentioned each feed tube road 230; Owing to only be used for being provided with a kind of in electric wiring 232, helium passages 231 and the coolant guiding channel 233; Compare the existing feed tube road that need introduce three passages simultaneously, the space that each feed tube road 230 occupies in treatment chamber 200 in the present embodiment has dwindled a lot.And because three feed tube roads 230 are evenly distributed in the treatment chamber 200, therefore, gas can evenly aspirate in 220 pairs of treatment chamber of vacuum pump 200, guarantees the operating efficiency of treatment chamber 200.
The utility model also can be four even more except being three feed tube roads, 230 supporting bases 210, and electric wiring, refrigerating gas, liquid can be carried through different pipelines, also can carry through one of them pipeline.Send pipeline 230 in the torus space of whole exhaust, evenly to distribute just to guarantee extraction flow to handle even on the space as long as ensure in whole machining process.
Although the content of the utility model has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to the restriction to the utility model.After those skilled in the art have read foregoing, for the multiple modification of the utility model with to substitute all will be conspicuous.Therefore, the protection range of the utility model should be limited appended claim.
Claims (10)
1. the treatment chamber that can evenly bleed is operated under the vacuum state, and the reacting gas of introducing is wherein processed plasma, is used for crystal column surface is handled, and it is characterized in that, comprises:
Pedestal (210), its top are provided with mounting platform (211) and carry said wafer;
Some feed tubes road (230) is evenly distributed on pedestal (210) on every side with supporting base (210);
And, be used for intake-gas, make said treatment chamber (200) form the vacuum pump (220) of vacuum, it is arranged on the centre position, bottom of said treatment chamber (200).
2. the treatment chamber that can evenly bleed according to claim 1 is characterized in that, said some feed tubes roads (230) are respectively at treatment chamber (200) bottom opening, and between being evenly distributed on bottom pedestal (210) bottom and the treatment chamber (200).
3. the treatment chamber that can evenly bleed according to claim 1 is characterized in that, said some feed tubes roads (230) are respectively at treatment chamber (200) sidewall opening, and is evenly distributed between pedestal (210) sidewall and treatment chamber (200) sidewall.
4. the treatment chamber that can evenly bleed according to claim 1 is characterized in that, is equipped with electric wiring (232) in the said feed tube road (230), and it sends electric energy into pedestal (210) outside treatment chamber (200).
5. like the said treatment chamber that can evenly bleed of claim 4, it is characterized in that, be provided with electrode in the mounting platform (211) of said pedestal (210); Said electric wiring (232) is connected with said electrode, and it is applied radio frequency, makes the plasma that in said treatment chamber (200), forms said reacting gas.
6. the treatment chamber that can evenly bleed according to claim 1 is characterized in that, is equipped with coolant channel in the said feed tube road (230).
7. like the said treatment chamber that can evenly bleed of claim 6, it is characterized in that said cooling agent is a helium, it is introduced between said wafer and the mounting platform (211) via said coolant channel, cools off from the back side to said wafer.
8. like the said treatment chamber that can evenly bleed of claim 6, it is characterized in that said cooling agent comprises cooling fluid.
9. the treatment chamber that can evenly bleed is operated under the vacuum state, and the reacting gas of introducing is wherein processed plasma, is used for crystal column surface is handled, and it is characterized in that, comprises:
Pedestal (210), its top are provided with mounting platform (211) and carry said wafer;
An air extractor is positioned at pedestal (210) below;
A bracing or strutting arrangement; Through a plurality of supports that are provided with; Support said pedestal (210); And making said pedestal (210) be fixed to said treatment chamber (200), wherein said a plurality of supports are fixed on the exhaust space of evenly cutting apart between said treatment chamber (200) and the pedestal (210) between pedestal and said treatment chamber (200) sidewall.
10. like the said treatment chamber that can evenly bleed of claim 9, it is characterized in that, comprise the electric wiring that is used for power delivery in said a plurality of supports, and be used for temperature controlled fluid-transporting tubing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120346714XU CN202230975U (en) | 2010-11-25 | 2011-09-16 | Process chamber capable of uniformly pumping |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020624453 | 2010-11-25 | ||
| CN201020624453.9 | 2010-11-25 | ||
| CN201120346714XU CN202230975U (en) | 2010-11-25 | 2011-09-16 | Process chamber capable of uniformly pumping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202230975U true CN202230975U (en) | 2012-05-23 |
Family
ID=46081553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120346714XU Expired - Lifetime CN202230975U (en) | 2010-11-25 | 2011-09-16 | Process chamber capable of uniformly pumping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202230975U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146753A (en) * | 2016-03-01 | 2017-09-08 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus |
| CN109148251A (en) * | 2017-06-19 | 2019-01-04 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN109935541A (en) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | Reaction chamber |
-
2011
- 2011-09-16 CN CN201120346714XU patent/CN202230975U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146753A (en) * | 2016-03-01 | 2017-09-08 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus |
| CN107146753B (en) * | 2016-03-01 | 2020-03-31 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN109148251A (en) * | 2017-06-19 | 2019-01-04 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN109148251B (en) * | 2017-06-19 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Lower electrode mechanism of reaction chamber and reaction chamber |
| CN109935541A (en) * | 2019-03-13 | 2019-06-25 | 江苏鲁汶仪器有限公司 | Reaction chamber |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Process chamber capable of uniformly pumping Effective date of registration: 20150202 Granted publication date: 20120523 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20120523 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120523 |