CN202188910U - Intelligent pyroelectric infrared ray sensor - Google Patents
Intelligent pyroelectric infrared ray sensor Download PDFInfo
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- CN202188910U CN202188910U CN2011202569606U CN201120256960U CN202188910U CN 202188910 U CN202188910 U CN 202188910U CN 2011202569606 U CN2011202569606 U CN 2011202569606U CN 201120256960 U CN201120256960 U CN 201120256960U CN 202188910 U CN202188910 U CN 202188910U
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Abstract
The utility model relates to a miniaturized intelligent type pyroelectric infrared ray sensor and provides an intelligent pyroelectric infrared ray sensor characterized by comprising infrared sensitive material elements; a housing comprising a substrate and a cover plate, wherein the central section of the substrate recesses downwards to form an accommodation space used for accommodating and packaging the infrared sensitive material elements and an integrated circuit chip module, and the cover plate is provided with a silicon-based window for the use of an infrared optical diffraction filtering element; the infrared optical diffraction filtering element which is installed in the silicon-based window and is a plane silicon-based Fresnel Len with the bottom plane vapor plated with an infrared anti-reflection material layer; and the integrated circuit chip module which is a highly integrated embedded integrated circuit chip and internally integrates a signal amplification circuit, an analog to digital conversion circuit, a low pass / high check filter circuit and a signal output unit. According to the utility model, the miniaturized intelligent pyroelectric infrared ray sensor which can output a plurality of kinds of control signals is formed by employing the embedded intelligent integrated circuit chip and internally integrating various sensor circuits.
Description
Technical field
The utility model relates to a kind of infrared ray sensor, is specifically related to a kind of intelligent Thermoelectric Infrared Sensor of microminiaturization.
Background technology
Thermoelectric Infrared Sensor by a kind of material of high pyroelectric coefficient, is the infrared-sensitive material element that pottery, lithium tantalate, triglycine sulfate etc. are processed like lead zirconate titanate normally.One or more sensitive material elements of promptly in each sensor, packing into; And the sensitive material element connected with opposite polarity; With the interference that suppresses to produce owing to self temperature variation; The infrared radiation that to responded to and receive by the sensitive material element is transformed into faint voltage signal, and the FET in being contained in sensor carries out outwards exporting after the impedance conversion.
Thermoelectric Infrared Sensor in the market all is to adopt traditional material and structure to constitute basically, mainly is welded with infrared-sensitive material element, infrared optics optical filter, fet and metal shell.Its principle of work is: it is about 9.3 microns infrared ray that human body radiation goes out centre wavelength; Pass the optical filter of 5-14um then; Make infrared-sensitive material change the spontaneous polarization state, flow of charge produces voltage signal, carries out exporting simulating signal after the impedance conversion through fet.All influence signal output because variation of ambient temperature, human body displacement change, the output voltage of sensor at tens of microvolts to variation between hundreds of microvolts and be nonlinear characteristic.
Fig. 1 is the structural representation of traditional Thermoelectric Infrared Sensor; Main composition structure is that infrared optics optical filter 10, infrared-sensitive material element 11, resistance 13, fet 12 and metal shell 14 are welded; Wherein infrared optics optical filter 10 mainly is the infrared ray of control through 5-14um, and resistance 13 is the very high resistance of coupling sensitive material, and normally the bulk resistor with sensitive material substitutes; Fet 12 is impedance conversion usefulness, and metal shell 14 is used for sealing.
For the sensitivity that increases sensor to increase distance of reaction, generally at Fresnel Lenses of the place ahead of sensor installing with optical diffraction function.These lens are processed with the clear PE plastics, and some screw threads and curved-surface structure are arranged, have optical focus and copped wave effect, it matches with external amplifying circuit, signal is amplified more than 70 decibels again, so just can measure the mobile of the interior people of 5～12 meters scopes.
Because the weak output signals of sensor self, the curved face type plastics Fresnel Lenses of the amplifying and conditioning circuit of the thousands of multiplying powers of follow-up needs and external focusing just can detect and use.The problem of its existence is:
1, follow-up modulate circuit is very big, is difficult to realize microminiaturized.
2, the technical requirement of sensor micro-signal amplifying circuit is high, debug difficulties, and environmental disturbances is big, and the layman is difficult to use;
3, secondly be that external Fresnel lens volume is very big, influence the miniaturization of products, be difficult on the modern digital product and promote the use of.
Along with the development of IT product, sensor microminiaturization and digitizing are a kind of inexorable trends.The utility model is exactly to overcome above-mentioned problem, for being fit to the microminiaturized device that such application designs.
Summary of the invention
The utility model purpose is in order to solve the problems of the technologies described above; Thermoelectric Infrared Sensor a kind of microminiaturization, intelligent is provided; Be characterized in adopting the embedded intelligence IC chip; Inner integrated various sensor circuits form a kind of microminiaturization, have the pyroelectric sensor of signal analysis and processing ability, exportable multiple different controllable signals.
The purpose of the utility model is to realize through following technical scheme:
A kind of Thermoelectric Infrared Sensor includes:
The infrared-sensitive material element;
Shell; Include substrate and cover plate; The recessed downwards receiving space that forms in substrate middle part; Receiving space inside is used to take in and encapsulates infrared sensor and IC chip module, and cover plate is provided with the silica-based window that supplies infrared optics diffraction filter element to use, and infrared-sensitive material element and IC chip module Direct Bonding are in encapsulating material;
Infrared optics diffraction filter element; Be installed in the silica-based window; It is the silica-based Fresnel Lenses of plane, and the surface is provided with ascending concentric circles, and the base plane vapor deposition has the infrared anti-reflection material layer; Be positioned at infrared-sensitive material element top, play infrared filtering and the dual effect of infrared focusing simultaneously;
The IC chip module, it is highly integrated embedded IC chip, is integrated with signal amplification circuit, analog to digital conversion circuit, low pass/height only filtering circuit and signal output unit in it.
Infrared optics diffraction filter element, on its surface according to optical principle, with the rotten carving method of semiconductor; Be provided with ascending concentric circles; Being the serrated slot of Different Slope, is that lens base plane vapor deposition has the infrared anti-reflection materials at another side, and its effect is to let the anti-reflection and light ray cut of other wavelength of 5-14um infrared ray; Place sensitive material element top, have infrared filtering and infrared focusing double action.
The material of thermal release electric infra-red ray sensitive element commonly used has ceramic oxide and piezoelectric crystal, like barium titanate, lithium tantalate, triglycine sulfate and titanium lead plumbate etc.The sensitive material of the infrared-sensitive material element of the utility model is preferably lead titanate ceramics or silica-based honeycomb array sensitive element.
Concentric circles on the described infrared optics diffraction filter element is that the serrated slot of Different Slope forms.
For stablizing chip operation, described IC chip module also is integrated with reference voltage source, temperature-compensation circuit and inner oscillator.
When human body radiation goes out centre wavelength is about 9.3 microns infrared ray; Pass the infrared optics diffraction filter element of 5-14um then; Make infrared-sensitive material change the spontaneous polarization state, flow of charge produces voltage signal, and signal carries out the IC chip module; After signal amplification circuit, D/A converting circuit, low pass/height end filtering circuit, nurse one's health the output signal that generation needs by signal output unit.
In the IC chip module, be provided with the signal output unit of handling the output signal, signal output unit has two kinds of schemes:
A kind of scheme is that signal output unit adopts the digitizing output unit, directly DOCI type data output.
Another kind of scheme is that signal output unit is adopted logical door decision circuitry.
Further, described logical door decision circuitry also is connected with the output time circuit is set, and said the resistance R t that the output time circuit is connected with the adjustment time is set.
Other alternative case; Described logical door decision circuitry also is connected with and sensitivity channel is set and light-operated threshold values circuit is set; Described be provided with sensitivity channel be connected with the adjustment sensitivity resistance R s, described be provided with light-operated threshold values circuit be connected with the adjustment light-operated threshold values resistance R o.
Described logical door decision circuitry also is connected with and sensitivity channel is set and the output time circuit is set, and described the resistance R s that sensitivity channel is connected with adjustment sensitivity is set, and described the resistance R t that the output time circuit is connected with the adjustment time is set.
Described logical door decision circuitry also is connected with sensitivity channel is set, the output time circuit is set and light-operated threshold values circuit is set; The described sensitivity channel that is provided with is connected with the resistance R s that adjusts sensitivity; Said the resistance R t that the output time circuit is connected with the adjustment time is set, described the resistance R o that light-operated threshold values circuit is connected with the light-operated threshold values of adjustment is set.
Can also reconfigure and add various elements and circuit according to the different functions demand at described IC chip.
The beneficial effect that the technical scheme of the infrared ray sensor of the utility model has: adopt silica-based Fresnel Lenses of plane and surface to add the infrared absorption filter photosphere; Substitute traditional optical filter, reduce volume and have infrared filtering and infrared focusing double action simultaneously; The encapsulation of employing patch form has signal intelligent analyzing and processing, digitizing output, the strong multiple function of antijamming capability; With infrared ray responsive material and infrared optics optical filter, in conjunction with the embedded intelligence IC chip, Direct Bonding forms a kind of microminiaturization, has the signal analysis and processing ability, the intelligent pyroelectric sensor of the different controllable signals of output in encapsulating material.Sensor uses the patch form structure, is particularly suitable for fields such as number, security protection, household electrical appliances, toy, and market outlook are wide.
Description of drawings
Fig. 1 is the structural representation of tradition and Thermoelectric Infrared Sensor.
Fig. 2 is the structure cut-open view of sensor of the embodiment 1 to 6 of the utility model.
Fig. 3 is the front elevation of infrared optics diffraction filter element of sensor of the embodiment 1 to 6 of the utility model.
Fig. 4 is the sectional view of infrared optics diffraction filter element of sensor of the embodiment 1 to 6 of the utility model.
Fig. 5 is the view of B.B.P of sensor of the embodiment 1 to 6 of the utility model.
Fig. 6 is the structural representation of sensor of the embodiment 1 of the utility model.
Fig. 7 is the structural representation of sensor of the embodiment 2 of the utility model.
Fig. 8 is the structural representation of sensor of the embodiment 3 of the utility model.
Fig. 9 is the structural representation of sensor of the embodiment 4 of the utility model.
Figure 10 is the structural representation of sensor of the embodiment 5 of the utility model.
Figure 11 is the structural representation of sensor of the embodiment 6 of the utility model.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, describe its structure of the utility model and function in detail.
Embodiment 1:
Shown in accompanying drawing 2, be the synoptic diagram of the sensor package of present embodiment, its structure mainly includes infrared-sensitive material element 25, infrared optics diffraction filter element 20, IC chip module 24 and shell.
In conjunction with accompanying drawing 3, shown in Figure 4, infrared optics diffraction filter element 20 is the silica-based Fresnel Lenses of plane, on its surface according to optical principle; With the rotten carving method of semiconductor; Be provided with ascending concentric circles 201, promptly the serrated slot of Different Slope has infrared anti-reflection material layer 202 at the another side vapor deposition; Its effect is the anti-reflection and light ray cut of other wavelength of double as 5-14um infrared ray; Filter layer and lens are united two into one, place sensitive material element top, have infrared filtering and infrared focusing double action.This infrared optics diffraction filter element 20 directly is embedded in the silica-based window place of the cover plate of outer casing 21 of sensor, and cements with resin material 28, substitute the traditional optical optical filter, and volume is little, and good looking appearance is particularly suitable for microminiaturized needs.
Shell comprises substrate 22 and cover plate 21; The recessed downwards receiving space that forms in substrate 22 middle parts is accommodated each element of sensor, also is provided with metal frame 27 at periphery; In order to fixing welded cover plate 21; Substrate and cover plate materials are metallized ceramic or metallization resin material, all make electromagnetic screen and handle, and reduce the electromagnetic interference (EMI) on boundary in addition.Be provided with the input that links to each other with the IC chip module, the lead terminal 23 of output in the bottom of substrate.
Shown in accompanying drawing 5; The lead terminal 23 that the input of present embodiment infrared sensor, output are used is for realizing patch form; Adopt PCB substrate back electrode,, be electrically connected with circuit on the substrate 22 via B.B.P; Be connected thereby reach with IC chip module 24, set number of lead can be done corresponding the variation according to the connectivity port quantity of input, output needs.
Infrared-sensitive material element 25 adopts the infra-red china sensitive element; Pack in the sensor two or four sensitive material elements 25; And sensitive element connected with opposite polarity, because the interference that self temperature raises and produces, common also possess the retainer 26 that infrared-sensitive material is supported to suppress; Retainer 26 directly carries and places substrate; Through the necessary circuitry that forms on its plate, be connected to IC chip module 24, also be formed with necessary electrode on the surface of retainer 26 and be connected to reach with the circuit of IC chip with circuit.
Shown in accompanying drawing 6, the IC chip module is multiple functional circuit set, adopts highly integrated embedded IC chip nude film nation fixed; In the integrated signal amplification circuit that includes; Analog to digital conversion circuit, low pass/height ends filtering circuit and signal output unit, for stablizing chip operation; Its indoor design has reference voltage source, temperature-compensation circuit and inner oscillator.
When human body radiation goes out centre wavelength is about 9.3 microns infrared ray; Pass the infrared optics diffraction filter element of 5-14um then; Make infrared-sensitive material change the spontaneous polarization state; Flow of charge produces voltage signal, and signal carries out the IC chip module, nurses one's health the output signal that generation needs through signal amplification, conversion, filtering by signal output unit.
The signal output unit of present embodiment sensor is a kind of self-defined DOCI digitizing output unit, directly DOCI type data output.
The present embodiment sensor can directly export the DOCI digital pulse signal; This sensor after the encapsulation can be exported a pre-service digital pulse signal more than 14; Be connected with user's single-chip processor i/o, after single-chip microcomputer is further handled, control infrared induction function flexibly such as security protection, household electrical appliances, light fixture, toy, communication products.
Embodiment 2:
Shown in accompanying drawing 2, the structure of present embodiment sensor is with embodiment 1, and its structure mainly includes infrared-sensitive material element 25, infrared optics diffraction filter element 20, IC chip module 24 and shell.
In conjunction with accompanying drawing 3, shown in Figure 4, infrared optics diffraction filter element 20 is the silica-based Fresnel Lenses of plane, on its surface according to optical principle; With the rotten carving method of semiconductor; Be provided with ascending concentric circles 201, promptly the serrated slot of Different Slope has infrared anti-reflection material layer 202 at the another side vapor deposition; Its effect is the anti-reflection and light ray cut of other wavelength of double as 5-14um infrared ray; Filter layer and lens are united two into one, place sensitive material element top, have infrared filtering and infrared focusing double action.This infrared optics diffraction filter element 20 directly is embedded in the silica-based window place of the cover plate of outer casing 21 of sensor, and cements with resin material 28, substitute the traditional optical optical filter, and volume is little, and good looking appearance is particularly suitable for microminiaturized needs.
Shell comprises substrate 22 and cover plate 21; The recessed downwards receiving space that forms in substrate 22 middle parts is accommodated each element of sensor, also is provided with metal frame 27 at periphery; In order to securing cover plate 28; Substrate and cover plate materials are metallized ceramic or metallization resin material, all make electromagnetic screen and handle, and reduce the electromagnetic interference (EMI) on boundary in addition.Be provided with the input that links to each other with the IC chip module, the lead terminal 23 of output in the bottom of substrate.
Shown in accompanying drawing 5; The lead terminal 23 that the input of present embodiment infrared sensor, output are used is for realizing patch form; Adopt PCB substrate back electrode,, be electrically connected with circuit on the substrate 22 via B.B.P; Be connected thereby reach with IC chip module 24, set number of lead can be done corresponding the variation according to the connectivity port quantity of input and output needs.
Infrared-sensitive material element 25 adopts the infra-red china sensitive element; Pack in the sensor two or four sensitive material elements 25; And sensitive element connected with opposite polarity, because the interference that self temperature raises and produces, common also possess the retainer 26 that infrared-sensitive material is supported to suppress; Retainer 26 directly carries and places substrate; Through the necessary circuitry that forms on its plate, be connected to IC chip module 24, also be formed with necessary electrode on the surface of retainer 26 and be connected to reach with the circuit of IC chip with circuit.
Shown in accompanying drawing 7, the IC chip module is multiple functional circuit set, adopts highly integrated embedded IC chip nude film nation fixed; In the integrated signal amplification circuit that includes; Analog to digital conversion circuit, low pass/height ends filtering circuit and signal output unit, for stablizing chip operation; Its indoor design has reference voltage source, temperature-compensation circuit and inner oscillator.
The signal output unit of present embodiment sensor is a logical door decision circuitry, and sensitivity places high state, and the output signal is the synchronization pulse that moves with human body.
This sensor can be exported the synchronization pulse that moves with human body, directly drives single-chip processor i/o, LED and other unit that need directly monitor, the infrared induction function of control such as security protection, household electrical appliances, light fixture, toy, communication products flexibly.
Embodiment 3:
In conjunction with shown in the accompanying drawing 8 and with reference to embodiment 2, the signal output unit of present embodiment sensor is a logical door decision circuitry, and sensitivity places high state.
The difference of present embodiment and embodiment 2 is; This logical door decision circuitry is connected with one the output time circuit is set; The output time circuit is set comes the adjustment time through the resistance R t that is connected, the output signal is for to move effective high level REL with human body.
This sensor can directly be exported that move with human body, that have time constant, as to have certain driving force high level REL.Can directly drive single-chip processor i/o, LED and other unit that need directly monitor, the infrared induction function of control such as security protection, household electrical appliances, light fixture, toy, communication products flexibly.
Embodiment 4:
In conjunction with shown in the accompanying drawing 9 and with reference to embodiment 2, the signal output unit of present embodiment sensor is a logical door decision circuitry, and sensitivity places high state.
The difference of present embodiment and embodiment 2 is; This logical door decision circuitry also is connected with and sensitivity channel is set and light-operated threshold values circuit is set; Sensitivity channel is set is connected with the resistance R s that is used to adjust sensitivity; Light-operated threshold values circuit is set is connected with the resistance R o that is used to adjust light-operated threshold values, the output signal is for to move effective pulse signal with human body.
This sensor is directly exported that move with human body, that have time constant, as to have certain driving force pulse signal.Can directly drive single-chip processor i/o, LED and other unit that need directly monitor.Control infrared induction function flexibly such as security protection, household electrical appliances, light fixture, toy, communication products.
Embodiment 5:
In conjunction with shown in the accompanying drawing 10 and with reference to embodiment 2, the signal output unit of present embodiment sensor is a logical door decision circuitry, and sensitivity places high state.
The difference of present embodiment and embodiment 2 is; This logical door decision circuitry also is connected with and sensitivity channel is set and the output time circuit is set; Sensitivity channel is set is connected with the resistance R s that is used to adjust sensitivity; The output time circuit is set is connected with the resistance R t that is used to the time of adjusting, the output signal is for to move effective high level REL with human body.
This sensor can directly export move with human body, to have sensitivity adjustable and have high level REL time constant, that have certain driving force.Can directly drive single-chip processor i/o, LED and other unit that need directly monitor.Control infrared induction function flexibly such as security protection, household electrical appliances, light fixture, toy, communication products.
Embodiment 6:
In conjunction with shown in the accompanying drawing 11 and with reference to embodiment 2, the signal output unit of present embodiment sensor is a logical door decision circuitry, and sensitivity places high state.
The difference of present embodiment and embodiment 2 is; This logical door decision circuitry also is connected with sensitivity channel is set, the output time circuit is set and light-operated threshold values circuit is set; The described sensitivity channel that is provided with is connected with the resistance R s that adjusts sensitivity; Said the resistance R t that the output time circuit is connected with the adjustment time is set, described the resistance R o that light-operated threshold values circuit is connected with the light-operated threshold values of adjustment is set, the output signal is for to move effective high level REL with human body.
This sensor can directly export move with human body, have sensitivity adjustable, have time constant, light valve value high level REL controlled, that have certain driving force.Can directly drive single-chip processor i/o, LED and other unit that need directly monitor.Control infrared induction function flexibly such as security protection, household electrical appliances, light fixture, toy, communication products.
Although more than described the preferred embodiment of the utility model, the scope that is to be understood that the utility model is not to be limited by described embodiment.Each embodiment can use and make up use separately, to be packaged into different series product.
Claims (9)
1. intelligent Thermoelectric Infrared Sensor is characterized in that including:
The infrared-sensitive material element;
Shell; Include substrate and cover plate; The recessed downwards receiving space that forms in substrate middle part; Receiving space inside is used to take in and encapsulates infrared sensor and IC chip module, and cover plate is provided with the silica-based window that supplies infrared optics diffraction filter element to use, and infrared-sensitive material element and IC chip module Direct Bonding are in encapsulating material;
Infrared optics diffraction filter element; Be installed in the silica-based window; It is the silica-based Fresnel Lenses of plane, and the surface is provided with ascending concentric circles, and the base plane vapor deposition has the infrared anti-reflection material layer; Be positioned at infrared-sensitive material element top, play infrared filtering and the dual effect of infrared focusing simultaneously;
The IC chip module, it is highly integrated embedded IC chip, is integrated with signal amplification circuit, analog to digital conversion circuit, low pass/height only filtering circuit and signal output unit in it.
2. Thermoelectric Infrared Sensor according to claim 1 is characterized in that: described IC chip module also is integrated with reference voltage source, temperature-compensation circuit and inner oscillator, to stablize chip operation.
3. Thermoelectric Infrared Sensor according to claim 1 is characterized in that: the concentric circles on the described infrared optics diffraction filter element is the serrated slot of Different Slope.
4. Thermoelectric Infrared Sensor according to claim 2 is characterized in that: described signal output unit is the digitizing output unit.
5. Thermoelectric Infrared Sensor according to claim 2 is characterized in that: described signal output unit is a logical door decision circuitry.
6. Thermoelectric Infrared Sensor according to claim 5 is characterized in that: described logical door decision circuitry also is connected with the output time circuit is set, and said the resistance R t that the output time circuit is connected with the adjustment time is set.
7. Thermoelectric Infrared Sensor according to claim 5; It is characterized in that: described logical door decision circuitry also is connected with and sensitivity channel is set and light-operated threshold values circuit is set; Described be provided with sensitivity channel be connected with the adjustment sensitivity resistance R s, described be provided with light-operated threshold values circuit be connected with the adjustment light-operated threshold values resistance R o.
8. Thermoelectric Infrared Sensor according to claim 5; It is characterized in that: described logical door decision circuitry also is connected with and sensitivity channel is set and the output time circuit is set; Described the resistance R s that sensitivity channel is connected with adjustment sensitivity is set, described the resistance R t that the output time circuit is connected with the adjustment time is set.
9. Thermoelectric Infrared Sensor according to claim 5; It is characterized in that: described logical door decision circuitry also is connected with sensitivity channel is set, the output time circuit is set and light-operated threshold values circuit is set; The described sensitivity channel that is provided with is connected with the resistance R s that adjusts sensitivity; Said the resistance R t that the output time circuit is connected with the adjustment time is set, described the resistance R o that light-operated threshold values circuit is connected with the light-operated threshold values of adjustment is set.
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| CN2011202569606U CN202188910U (en) | 2011-07-20 | 2011-07-20 | Intelligent pyroelectric infrared ray sensor |
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| CN2011202569606U CN202188910U (en) | 2011-07-20 | 2011-07-20 | Intelligent pyroelectric infrared ray sensor |
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| CN106404188A (en) * | 2016-08-26 | 2017-02-15 | 淄博博山新颖传感器厂 | Anti-compression impact-resistant pyroelectric infrared detector |
| CN107543614A (en) * | 2016-06-24 | 2018-01-05 | 上海新微技术研发中心有限公司 | Thermopile sensor |
| CN107543615A (en) * | 2016-06-24 | 2018-01-05 | 上海新微技术研发中心有限公司 | Heat insulation packaging structure of temperature sensor |
| CN107808877A (en) * | 2016-09-08 | 2018-03-16 | 原相科技股份有限公司 | Far infrared sensing array integrated circuit combination and the encapsulation of far infrared sensor |
| CN108469305A (en) * | 2018-05-31 | 2018-08-31 | 中电科技德清华莹电子有限公司 | A kind of patch-type pyroelectric infrared sensor |
| CN109029726A (en) * | 2018-05-25 | 2018-12-18 | 西北工业大学 | A kind of window integrated form spectrum/polarized imaging system |
| CN109671783A (en) * | 2018-12-24 | 2019-04-23 | 烟台艾睿光电科技有限公司 | A kind of design of polychrome wafer-level packaging detector and preparation method |
| CN109813445A (en) * | 2017-11-21 | 2019-05-28 | 上海新微技术研发中心有限公司 | Infrared temperature sensor |
| CN110213862A (en) * | 2019-07-08 | 2019-09-06 | 深圳市宝泰光电科技有限公司 | It is a kind of that there are the intelligent controllers of formula human body infrared detection |
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| CN116940203A (en) * | 2023-09-07 | 2023-10-24 | 深圳市美思先端电子有限公司 | Pyroelectric infrared sensor |
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| CN107543615A (en) * | 2016-06-24 | 2018-01-05 | 上海新微技术研发中心有限公司 | Heat insulation packaging structure of temperature sensor |
| CN106404188B (en) * | 2016-08-26 | 2017-09-19 | 淄博博山新颖传感器厂 | A kind of resistance to compression shock resistance pyroelectric infrared detector |
| CN106404188A (en) * | 2016-08-26 | 2017-02-15 | 淄博博山新颖传感器厂 | Anti-compression impact-resistant pyroelectric infrared detector |
| US11874174B2 (en) | 2016-08-30 | 2024-01-16 | Pixart Imaging Inc. | Far infrared sensor apparatus having multiple sensing element arrays inside single package |
| US11573127B2 (en) | 2016-08-30 | 2023-02-07 | Pixart Imaging Inc. | Far infrared sensor apparatus having multiple sensing element arrays inside single package |
| US11054313B2 (en) | 2016-08-30 | 2021-07-06 | Pixart Imaging Inc. | Far infrared sensor apparatus having multiple sensing element arrays inside single package |
| CN107808877B (en) * | 2016-09-08 | 2019-11-05 | 原相科技股份有限公司 | Far infrared senses array integrated circuit combination and the encapsulation of far infrared sensor |
| CN107808877A (en) * | 2016-09-08 | 2018-03-16 | 原相科技股份有限公司 | Far infrared sensing array integrated circuit combination and the encapsulation of far infrared sensor |
| CN109813445A (en) * | 2017-11-21 | 2019-05-28 | 上海新微技术研发中心有限公司 | Infrared temperature sensor |
| CN109029726A (en) * | 2018-05-25 | 2018-12-18 | 西北工业大学 | A kind of window integrated form spectrum/polarized imaging system |
| CN108469305A (en) * | 2018-05-31 | 2018-08-31 | 中电科技德清华莹电子有限公司 | A kind of patch-type pyroelectric infrared sensor |
| CN109671783A (en) * | 2018-12-24 | 2019-04-23 | 烟台艾睿光电科技有限公司 | A kind of design of polychrome wafer-level packaging detector and preparation method |
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| CN110513136A (en) * | 2019-08-25 | 2019-11-29 | 滁州方大矿业发展有限公司 | A kind of pure air control unit of coal mine air door automatic blocking |
| CN111637978A (en) * | 2020-06-24 | 2020-09-08 | 南京信息工程大学 | Digital infrared temperature sensor of DFN encapsulation |
| WO2022166586A1 (en) * | 2021-02-05 | 2022-08-11 | 芯海科技（深圳）股份有限公司 | Digital-type infrared temperature sensor and electronic device |
| CN112985474A (en) * | 2021-03-10 | 2021-06-18 | 电子科技大学 | Current type photoelectric converter, device and method |
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