CN202183417U - Device for etching cathode thin-film material of OLED (Organic Light Emitting Diode) display by laser - Google Patents
Device for etching cathode thin-film material of OLED (Organic Light Emitting Diode) display by laser Download PDFInfo
- Publication number
- CN202183417U CN202183417U CN2011202684750U CN201120268475U CN202183417U CN 202183417 U CN202183417 U CN 202183417U CN 2011202684750 U CN2011202684750 U CN 2011202684750U CN 201120268475 U CN201120268475 U CN 201120268475U CN 202183417 U CN202183417 U CN 202183417U
- Authority
- CN
- China
- Prior art keywords
- furnished
- output
- focus lamp
- semi
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Abstract
The utility model relates to a device for etching a cathode thin-film material of an OLED (Organic Light Emitting Diode) display by laser. An electric optical shutter and an electric beam expander are distributed at the output end of a high-frequency short-pulse laser; a 1/2 wave plate is distributed at the output end of the electric beam expander; a polarization beam splitter is distributed at the output end of the 1/2 wave plate; a first semitransmitting and semireflecting mirror and a first 45-degree reflective lens are distributed at the output end of the polarization beam splitter; a first focus lens and a second 45-degree reflective lens are distributed at the output end of the first semitransmitting and semireflecting mirror; a second focus lens is distributed at the output end of the second 45-degree reflective lens; a second semitransmitting and semireflecting mirror is distributed at the output end of the first 45-degree reflective lens; a third focus lens and a third 45-degree reflective lens are distributed at the output end of the second semitransmitting and semireflecting mirror; a fourth focus lens is distributed at the output end of the third 45-degree reflective lens; and the output end of the focus lens is just opposite to a double-shaft absorbing platform. The cathode thin-film material of the OLED display is gasified under the action of the high-frequency short-pulse laser so as to achieve the aim of corrosion removing, and four paths of beams realize lien etching at a cathode area.
Description
Technical field
The utility model relates to a kind of little process equipment that uses laser ablation OLED display cathode thin-film material.
Background technology
In recent years; Organic Light Emitting Diode (organic light emitting diode; OLED) become very popular emerging Flat Panel Display Industry; Mainly be because the OLED display has self-luminous, wide viewing angle (reaching more than 170 degree), reaction time fast (1 μ s magnitude), high, the operating voltage low (3-10V) of luminous efficiency; Plate thickness approaches (less than 2mm), can make large scale and bendable musical form (flexible) panel, and processing procedure is simple, and has potentiality (estimating than TFT-LCD cheap about 20%) cheaply.
The OLED device architecture is broadly divided into four main region such as substrate, anode, organic luminescent substance and negative electrode.For with the effective injection organic material of electronics or hole; As previously mentioned; Reduce injecting energy barrier is top priority and since major applications in the lumo energy of electroluminescent organic material at 2.5eV-3.5eV, and the HOMO energy level is also at 5-6eV; Therefore negative electrode must be the metal of a high work function, just can obtain minimum injection energy barrier.Wherein as cathode zone, (transparent conducting oxide TCO) and two big types on metal, self has good electrical conductivity, stable chemical and the form and the high grade of transparency to mainly contain transparent conductive oxide.Wherein transparent conductive oxide has ITO, ZnO, AZO etc.; The conductive, transparent metal mainly contains high work function Ni, Au, reaches Pt.The metal oxide that the most often is taken as the negative electrode electric conductor is that (indium tin oxide, ITO), make mainly is with sputter or chemical vapour deposition (CVD) to indium tin oxide films.
Make after the cathode thin film on the substrate, generally need on film, etching design electrode pattern.It is to realize through the chemical wet lithography method that traditional electrode is made.This method is from be designed into etched process, and it is long to be designed into the deadline, and the processing procedure operation is many; Drop into more tool and daily consumptive material, need more manpower, contaminated environment; Power consumption is big, and the live width of making electrode pattern is big (greater than 0.1mm), makes whole OLED luminous efficiency reduce; So this wet chemical etching process need contain the management and control process of a plurality of operations, strengthen the difficulty of yield and improved efficiency, containing heavy metal waste liquid exhaust-gas treatment does not at present have very suitable way yet; The electrode pattern live width of making is bigger, and luminous efficiency is low, the low inherent defect that waits of the quality of finished product.
Summary of the invention
The purpose of the utility model is to overcome the deficiency that prior art exists; A kind of device of laser ablation OLED display cathode thin-film material is provided; Realization is carried out etching to the negative electrode of OLED display; Obtain thin more stable live width, and do not damage substrate, thereby the complex procedures that overcomes the wet carving method existence of traditional chemical is loaded down with trivial details, spacing is controlled shortcomings such as difficulty, selectivity are strong, contaminated environment.
The purpose of the utility model realizes through following technical scheme:
The device of laser ablation OLED display cathode thin-film material; Characteristics are: the output of high-frequency short-pulse laser is furnished with electronic optical gate; The output of electronic optical gate is provided with electronic beam expanding lens, and the output of electronic beam expanding lens is furnished with 1/2 wave plate, and the output of 1/2 wave plate is furnished with polarization spectroscope; The output of polarization spectroscope is furnished with first semi-transparent semi-reflecting lens and the one 45 degree reflecting optics; The output of first semi-transparent semi-reflecting lens is furnished with first focus lamp and the 2 45 degree reflecting optics, and the output of the 2 45 degree reflecting optics is furnished with second focus lamp, and the output of the one 45 degree reflecting optics is furnished with second semi-transparent semi-reflecting lens; The output of second semi-transparent semi-reflecting lens is furnished with the 3rd focus lamp and the 3 45 degree reflecting optics; The output of the 3 45 degree reflecting optics is furnished with the 4th focus lamp, and the output of first focus lamp, second focus lamp, the 3rd focus lamp and the 4th focus lamp is right against two absorption platforms, and the top of said two absorption platforms is furnished with CCD contraposition observing system; Be equipped with one group on said two absorption platforms and clamp cylinder; One side of said two absorption platforms is furnished with scavenger system, and the opposite side of two absorption platforms is equipped with dust-precipitating system, and the upper surface of two absorption platforms also is distributed with fulcrum ball.
Further; The device of above-mentioned laser ablation OLED display cathode thin-film material, said first semi-transparent semi-reflecting lens, second semi-transparent semi-reflecting lens, the 2 45 degree reflecting optics, the 3 45 degree reflecting optics, first focus lamp, second focus lamp, the 3rd focus lamp and the 4th focus lamp place optical box.
Substantive distinguishing features and obvious improvement that the utility model technical scheme is outstanding are mainly reflected in:
The utility model adopts the high-frequency pulse laser of different wave length as lasing light emitter; OLED display cathode material is carried out laser-induced thermal etching; Make OLED display cathode material reach the purpose that erosion removes in the effect gasified of high-frequency short-pulse laser; Cooperation through polarization spectroscope and semi-transparent semi-reflecting lens; Tell four road light beams and realize cathode zone lines etching, the dust of generation is through excessive flow laying dust system control of dust, thereby processes pollution-free, linear stable, OLED display product that function is intact.Not only improve process rate; Promote product quality and useful life, and the etching linearity is good, laser ablation OLED display cathode material live width can be run business into particular one; Luminous efficiency uprises, and all can realize high efficiency, high-precision processing for the OLED display curved surface electrode figure of complicacy.
Description of drawings
Below in conjunction with accompanying drawing the utility model technical scheme is described further:
Fig. 1: the light path system sketch map of the utility model.
Embodiment
The utility model proposes a kind of micro-processing method and system thereof that uses laser ablation OLED display cathode; Laser-induced thermal etching can be avoided the wet chemical inherent defect; And laser has noncontact, nonpollution environment, characteristic such as easy to control; Make its important application focus that becomes the control of OLED display cathode figure live width, and can in industry, be widely used gradually.Utilization laser etching OLED display cathode can reach more stable live width, makes the live width of negative electrode the most carefully can reach 20um, can change etched figure easily during production, and no generation of waste materials can be saved R&D costs in a large number and shortened product development cycle.High-precision control system and mechanism design can be carried out the high efficiency etching, fast, steadily, the heavy property covered height, can guarantee the stability and the precision of processing significantly to promote yield.
As shown in Figure 1; The device of laser ablation OLED display cathode thin-film material; High-frequency short-pulse laser 1 is that wavelength is 190nm～1100nm, pulsewidth at 100ps～100ns, the frequency laser at 10KHz～50MHz, and the output of high-frequency short-pulse laser 1 is furnished with electronic optical gate 2, and the output of electronic optical gate 2 is provided with electronic beam expanding lens 3; The output of electronic beam expanding lens 3 is furnished with 1/2 wave plate 4; The output of 1/2 wave plate 4 is furnished with polarization spectroscope 5, and the output that the output of polarization spectroscope 5 is furnished with first semi-transparent semi-reflecting lens 6 and the one 45 degree reflecting optics 16, the first semi-transparent semi-reflecting lens 6 is furnished with first focus lamp 13 and the 2 45 degree reflecting optics 17; The output of the 2 45 degree reflecting optics 17 is furnished with second focus lamp 19; The output that the output of the one 45 degree reflecting optics 16 is furnished with second semi-transparent semi-reflecting lens, 7, the second semi-transparent semi-reflecting lens 7 is furnished with the output that the 3rd focus lamp 20 and the 3 45 degree reflecting optics 18, the 3 45 spend reflecting optics 18 and is furnished with the 4th focus lamp 21; The output of first focus lamp 13, second focus lamp 19, the 3rd focus lamp 20 and the 4th focus lamp 21 is right against two absorption platforms 11; The top of two absorption platforms 11 is furnished with the side that 9, two absorption platforms 11 of one group of clamping cylinder are installed on 15, two absorption platforms 11 of CCD contraposition observing system and is furnished with scavenger system; The upper surface that the opposite side of two absorption platforms 11 is equipped with 12, two absorption platforms 11 of dust-precipitating system also is distributed with fulcrum ball 10.Wherein, first semi-transparent semi-reflecting lens 6, second semi-transparent semi-reflecting lens the 7, the 2 45 degree reflecting optics the 17, the 3 45 degree reflecting optics 18, first focus lamp 13, second focus lamp 19, the 3rd focus lamp 20 and the 4th focus lamp 21 place optical box 14.
When said apparatus was used for etching OLED display cathode thin-film material, the laser that high-frequency short-pulse laser 1 sends was by electronic optical gate 2 control switch light, and laser beam carries out coaxial expansion bundle by 3 pairs of light beams of electronic beam expanding lens behind electronic optical gate 2; Improve the angle of divergence of beam propagation; Make beam path alignment, light beam arrives 1/2 wave plate 4 behind electronic beam expanding lens 3 beam-expanding collimations, adjusts the identical light beam of two-way power by polarization spectroscope 5; One road light beam inputs to first semi-transparent semi-reflecting lens 6; Another road light beam inputs to the one 45 degree reflecting optics 16, the first semi-transparent semi-reflecting lens 6 output two-way light beams, and one road light beam focuses on the cathode material 8 of OLED display through first focus lamp 13; Another road focuses on the cathode material 8 of OLED display through the 2 45 degree reflecting optics 17 and second focus lamp 19 successively; The one 45 degree reflecting optics 16 output beam to the second semi-transparent semi-reflecting lens 7, the second semi-transparent semi-reflecting lens 7 output two-way light beams, one road light beam focuses on the cathode material 8 of OLED display through the 3rd focus lamp 20; Another road focuses on the cathode material 8 of OLED display through the 3 45 degree reflecting optics 18 and the 4th focus lamp 21 successively; Scanning patter is converted into digital signal, and figure transforms and on the cathode material 8 of the OLED display on two absorption platforms 11, carries out etching, and the cathode material 8 of OLED display supports through fulcrum ball 10 and is fixedly clamped by clamping cylinder 9; The cathode material 8 of OLED display is positioned on the same focussing plane; Target is taken and grasped to the location mark that CCD contraposition observing system 15 will import, and the dust that etching produces produces air-flow by scavenger system, collects dust by dust-precipitating system 12.Optical box 14 plays the light path protective effect, effectively avoids the dust in the environment to get into the optics control system, and optics is polluted; Light beam is becoming four beam optical paths through the semi-transparent semi-reflecting lens beam split after getting into optical box, through spacing between each beam optical path of kinetic control system control, through software processes figure is transformed on the cathode material 8 of the OLED display that needs etching again.
Adopt high-frequency short-pulse laser; Material processed is electric conducting materials such as magnesium silver alloy and lithium-aluminium alloy, and the etching substrate is a substrate of glass, and laser focusing is on OLED display cathode thin-film material; Reach the power threshold of conductive cathode material and gasify, thereby reach etch effect.OLED display cathode etched figure imports in the control system machining software, with figure according to bitmap layer with use four light paths to process.The substrate of OLED display is placed on the higher platform of flatness precision, places product clamping cylinder and opens, and guarantees that product is not shifted in the course of processing.CCD grabs target automatically, only needs in software, set up for the first time template, and the figure that imports sample target position in bitmap layer target position and the platform coordinate is provided with one by one is corresponding, and follow-up same batch products is directly grabbed target automatically can accomplish the location; Laser carries out etching according to design configuration, in the etched laying dust system that opens simultaneously, guarantees that the dust that etching produces all sucks in the dust-precipitating system, to improve the process repeatability and the stability of high-frequency pulse laser etching OLED display cathode.Kinematic system is 6 linear electric motors motion modes, uses monitoring of grating chi and feedback position information, can reach high-precision location operation operation; Its four tunnel beam splitting system can be carried out the graphics processing etching through the automatic spacing position of regulating four road light beams of control system.
The utility model adopts the high-frequency pulse laser of different wave length as lasing light emitter; OLED display cathode material is carried out laser-induced thermal etching; Make OLED display cathode material reach the purpose that erosion removes in the effect gasified of high-frequency short-pulse laser; Cooperation through polarization spectroscope and semi-transparent semi-reflecting lens; Tell four road light beams and realize cathode zone lines etching, the dust of generation is through excessive flow laying dust system control of dust, thereby processes pollution-free, linear stable, OLED display product that function is intact.Compare with conventional art; The first, improve process rate, promote product quality and useful life; Traditional chemical etching meeting injures the negative electrode electric conducting material; Fixture can cause OLED display cathode material to weigh wounded or problem such as pin hole, and can residual water, take sourly on OLED display cathode material, and have the product quality hidden danger of later stage shipment; The second, the etching linearity is good, and steps such as mask are leaned in the traditional chemical etching, and linearity is not good, and unfilled corner lacks the limit easily; The 3rd; Laser ablation OLED display cathode material live width can be run business into particular one, and luminous efficiency uprises, and the traditional chemical etch process must republish after the negative electrode electric conducting material etching with four lead location on glass; Therefore the space that needs broad; The laser-induced thermal etching processing procedure live width of then can running business into particular one, therefore the contact panel of identical overall dimensions adopts the product of laser ablation technology to have bigger OLED display area; The 4th, simplified processing process, change New Product's Design and design of part manufacturability etc. are produced active influences, all can realize high efficiency, high-precision processing for the OLED display curved surface electrode figure of complicacy.
What need understand is: the above only is the preferred implementation of the utility model; For those skilled in the art; Under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of the utility model.
Claims (2)
1. the device of laser ablation OLED display cathode thin-film material; It is characterized in that: the output of high-frequency short-pulse laser (1) is furnished with electronic optical gate (2); The output of electronic optical gate (2) is provided with electronic beam expanding lens (3); The output of electronic beam expanding lens (3) is furnished with 1/2 wave plate (4); The output of 1/2 wave plate (4) is furnished with polarization spectroscope (5); The output of polarization spectroscope (5) is furnished with first semi-transparent semi-reflecting lens (6) and the one 45 degree reflecting optics (16); The output of first semi-transparent semi-reflecting lens (6) is furnished with first focus lamp (13) and the 2 45 degree reflecting optics (17), and the output of the 2 45 degree reflecting optics (17) is furnished with second focus lamp (19), and the output of the one 45 degree reflecting optics (16) is furnished with second semi-transparent semi-reflecting lens (7); The output of second semi-transparent semi-reflecting lens (7) is furnished with the 3rd focus lamp (20) and the 3 45 degree reflecting optics (18); The output of the 3 45 degree reflecting optics (18) is furnished with the 4th focus lamp (21), and the output of first focus lamp (13), second focus lamp (19), the 3rd focus lamp (20) and the 4th focus lamp (21) is right against two absorption platforms (11), and the top of said two absorption platforms (11) is furnished with CCD contraposition observing system (15); Be equipped with one group on said two absorption platforms (11) and clamp cylinder (9); One side of said two absorption platforms (11) is furnished with scavenger system, and the opposite side of two absorption platforms (11) is equipped with dust-precipitating system (12), and the upper surface of two absorption platforms (11) also is distributed with fulcrum ball (10).
2. the device of laser ablation OLED display cathode thin-film material according to claim 1 is characterized in that: said first semi-transparent semi-reflecting lens (6), second semi-transparent semi-reflecting lens (7), the 2 45 degree reflecting optics (17), the 3 45 degree reflecting optics (18), first focus lamp (13), second focus lamp (19), the 3rd focus lamp (20) and the 4th focus lamp (21) place optical box (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202684750U CN202183417U (en) | 2011-07-27 | 2011-07-27 | Device for etching cathode thin-film material of OLED (Organic Light Emitting Diode) display by laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202684750U CN202183417U (en) | 2011-07-27 | 2011-07-27 | Device for etching cathode thin-film material of OLED (Organic Light Emitting Diode) display by laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202183417U true CN202183417U (en) | 2012-04-04 |
Family
ID=46176444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202684750U Expired - Lifetime CN202183417U (en) | 2011-07-27 | 2011-07-27 | Device for etching cathode thin-film material of OLED (Organic Light Emitting Diode) display by laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202183417U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102284789A (en) * | 2011-07-27 | 2011-12-21 | 苏州德龙激光有限公司 | Device and method for performing laser etching on organic light emitting diode (OLED) display cathode film material |
| CN111986986A (en) * | 2020-08-24 | 2020-11-24 | 松山湖材料实验室 | Wafer stripping method and stripping device |
-
2011
- 2011-07-27 CN CN2011202684750U patent/CN202183417U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102284789A (en) * | 2011-07-27 | 2011-12-21 | 苏州德龙激光有限公司 | Device and method for performing laser etching on organic light emitting diode (OLED) display cathode film material |
| CN111986986A (en) * | 2020-08-24 | 2020-11-24 | 松山湖材料实验室 | Wafer stripping method and stripping device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102284789A (en) | Device and method for performing laser etching on organic light emitting diode (OLED) display cathode film material | |
| CN102284794A (en) | Device and method for performing laser etching on organic light emitting diode (OLED) display anode film material | |
| CN103582943B (en) | Multi-step and asymmetric moulding laser beam line | |
| US8197912B2 (en) | Precision separation of PV thin film stacks | |
| CN103650115B (en) | Use laser and the cutting of plasma etching wafer of water-soluble die attach film | |
| KR102088754B1 (en) | Wafer dicing using femtosecond-based laser and plasma etch | |
| Tseng et al. | Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels | |
| GB2555277A9 (en) | Full-laser grooving and scribing method of large-area copper indium gallium selenide thin-film solar cell module | |
| Rung et al. | Laserscribing of thin films using top-hat laser beam profiles | |
| TW201740460A (en) | Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process | |
| CN102717190A (en) | Device and method for pulse laser etching of conducting film on organic glass | |
| CN101567303B (en) | Laser film engraving equipment and scribing method | |
| CN202183417U (en) | Device for etching cathode thin-film material of OLED (Organic Light Emitting Diode) display by laser | |
| CN103071925A (en) | Device and method for etching conducting layer made from graphene on touch screen | |
| CN203636207U (en) | Vacuum pulse laser etching device | |
| CN102689092A (en) | Solar wafer precision machining method and device using double laser beams | |
| CN202189836U (en) | Laser etching device for anode film of OLED (organic light emitting diode) display | |
| CN203509352U (en) | Pulsed laser etching device for transparent conducting films | |
| CN107685196B (en) | A kind of method and device of laser processing wafer | |
| CN102248289A (en) | Laser scribing insulation equipment for crystalline silicon solar cell | |
| CN201349017Y (en) | Laser film engraving machine for production amorphous silicon thin-film solar cell | |
| CN204975719U (en) | Carbon dioxide laser cutting machine | |
| KR20100105096A (en) | In-situ laser scribing apparatus | |
| Moser et al. | Laser processing of gallium nitride–based light-emitting diodes with ultraviolet picosecond laser pulses | |
| CN111900219B (en) | Method for preparing first reticle and third reticle of thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20120404 |
|
| CX01 | Expiry of patent term |