CN202094078U - Graphite component for ion injection device and ion injection device - Google Patents
Graphite component for ion injection device and ion injection device Download PDFInfo
- Publication number
- CN202094078U CN202094078U CN201120181303XU CN201120181303U CN202094078U CN 202094078 U CN202094078 U CN 202094078U CN 201120181303X U CN201120181303X U CN 201120181303XU CN 201120181303 U CN201120181303 U CN 201120181303U CN 202094078 U CN202094078 U CN 202094078U
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- ion
- implantation apparatus
- ion source
- graphite
- graphite member
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Abstract
The utility model relates to a graphite component for an ion injection device and the ion injection device. The surface of the graphite component is covered with a polycrystalline silicon layer. Specific to the graphite component, the utility model further provides the ion injection device, which comprises an ion source and the graphite component. The surface of the graphite component is covered with the polycrystalline silicon layer, so that injected ions moving at a high speed fall onto the polycrystalline silicon layer instead of a graphite material, the injected ions are prevented from producing a substance with a strong thermoelectric effect together with graphite, the ion injection device is protected, and the service lives of the graphite component and the ion injection device are prolonged.
Description
Technical field
The utility model relates to a kind of integrated circuit processing and manufacturing device, relates in particular to a kind of ion implantation apparatus that is used for graphite member and ion implantation apparatus.
Background technology
In the process of processing semiconductor device, one of them step is to adopt the mode of ion injection to Semiconductor substrate implanted dopant element, and the material of described Semiconductor substrate for example is silicon, carborundum (SiC), GaAs (GaAs) or gallium nitride materials such as (GaN).
Please refer to Fig. 1, it is the structural representation of prior art intermediate ion injection device.This ion implantation apparatus 10 is the impurity element ionization that is used for hope, and the element after the ionization is accelerated to the setting energy, and makes the element bump Semiconductor substrate after the acceleration.
As shown in Figure 1, the ion source 11 that injects ion is provided during described ion implantation apparatus 10 comprises track tube wall 110 and is arranged at tube wall track 110, be used for drawing the ion of generation extraction electrode (Extraction Electrode) 12, be used for selecting the deflecting electrode 15 that separates electromagnet 13, is used for the accelerating electrode 14 of speeding-up ion and is used to make speeding-up ion deflection of the ion of wishing from the ion of drawing, and ion source terminator 17 (Beam Stop), described ion source terminator the place ahead is provided with wafer 16.The direction of motion of ion is injected in 20 expressions of dotted line direction among Fig. 1.
The material of forming each parts of ion implantation apparatus all requires to have excellent thermal endurance and excellent thermal conductivity, therefore in ion implantation apparatus, in passing through process, ion needs to use direction and the shape that a large amount of graphite changes ion, for example, track tube wall and be arranged at the ion source control electrode of described orbitron pars intramuralis and ion source terminator etc. all needs to use graphite material, industry also uses the parts of graphite materials to be called graphite member these.Especially in the ion implantor platform of big electric current, owing to need the add high pressure graphite of (0-20KV) of needs be arranged at back segment on the processing procedure, a large amount of ions can be owing to negative pressure is beaten at graphite surface.In the board continuous operation during greater than three days, graphite can produce a large amount of punctures in actual production process, thereby causes board to damage or evoke a large amount of impurity, to such an extent as to a lot of board can not move product.
It all is that carbon content is higher than 95% high purity graphite basically that graphite is used in ion injection now, and voltage just meets the demands for every centimetre less than 5KV between graphite.But because chemical reaction can take place and generates B in carbon and boron ion under hot conditions
4C, B
4C is the very strong material of a kind of thermoelectric effect, when under HTHP, at B
4Thereby the C material surface is assembled a large amount of ions and is produced discharge, causes puncturing.
The utility model content
The technical problems to be solved in the utility model is; a kind of graphite member that is used for ion implantation apparatus is provided; by at its surface coverage one deck polysilicon; thereby the ion of high-speed motion is beaten at polysilicon layer; but not beat on graphite material; thereby avoid injecting ion and graphite and produce the stronger material of thermoelectric effect, thus the protection ion implantation apparatus, the useful life of improving graphite member and then ion implantation apparatus.
For addressing the above problem, the utility model provides a kind of ion implantation apparatus graphite member, and described graphite member surface coverage has polysilicon layer.
Further, the thickness of described polysilicon layer is 1mm～2mm.
The utility model also provides a kind of ion implantation apparatus, being used for that wafer is carried out ion injects, comprise ion source and above-mentioned graphite member, ion source control electrode and ion source terminator that described graphite member comprises the track tube wall and is arranged at described orbitron pars intramuralis; Wherein
Described ion source is arranged at the initiating terminal of edge injection ion motion direction in the track tube wall, comprises the ion of the impurity element of needs injection;
Described ion source control electrode is positioned at described ionogenic the place ahead along injecting the ion motion direction;
Described ion source terminator is arranged at the clearing end of edge injection ion motion direction in the track tube wall, fixes described wafer on the described ion source terminator.
Further, described ion source control electrode comprises extraction electrode forward successively, separates electromagnetic pole, accelerating electrode and deflecting electrode along injecting the ion motion direction.
Further, the thickness of described polysilicon layer is 1mm～2mm.
In sum, the surface of graphite member described in the utility model is formed with polysilicon layer, and various injection ions are (as BF
3, AsH
3, PH
3) through under the HTHP all not can with polysilicon generation chemical reaction, and polysilicon neither the pyroelectricity material, so when injecting ion arrival graphite member, inject ion and also only can inject the polysilicon layer the inside, thereby can not contact with graphite, can not produce the very strong material of thermoelectric effect, can avoid ion to assemble discharge in a large number, prevent the punch through damage ion implantation apparatus, prolong the useful life of graphite member.
Description of drawings
Fig. 1 is the structural representation of prior art intermediate ion injection device;
Fig. 2 is the structural representation of the utility model one embodiment intermediate ion injection device.
Embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in the protection range of the present utility model.
Secondly, the utility model utilizes schematic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
Core concept of the present utility model provides a kind of graphite member that is used for ion implantation apparatus; its surface coverage has polysilicon layer; thereby inject ion at the ion implantation apparatus moving process; the injection ion of not squeezing into crystal column surface can be beaten the polysilicon layer on the graphite member surface; but not beat on the graphite material of graphite member; thereby avoid injecting ion and graphite and produce the stronger material of thermoelectric effect; thereby protected ion implantation apparatus, improved the useful life of graphite member and then ion implantation apparatus.
Fig. 2 is the structural representation of graphite member among the utility model one embodiment.As shown in Figure 2, ion implantation apparatus described in the utility model graphite member 100, the ion source control electrode (indicating among the figure) and the ion source terminator 211 that comprise track tube wall 210 and be arranged at described track tube wall 210 inside, described graphite member 100 surface coverage have polysilicon layer 101.Various injection ions are (as BF
3, AsH
3, PH
3) through the polysilicon generation chemical reaction of all getting along well under the HTHP, and polysilicon neither the pyroelectricity material, so the surface of graphite member (especially positive and middle) adds one deck polysilicon layer, when injecting ion arrival graphite member, inject ion and also only can inject the polysilicon layer the inside, thereby can not contact with graphite, can not produce the very strong material of thermoelectric effect, avoid ion to assemble discharge in a large number, cause the punch through damage ion implantation apparatus, prolong the useful life of ion implantation apparatus.
Wherein, the thickness of described polysilicon layer is preferably 1mm～2mm.Described polysilicon layer can adopt the method for plating or plasma sputtering (plasma) to form.The thickness of above-mentioned polysilicon is easy to form and enough stops and injects the graphite material that ion is squeezed into graphite member.
Fig. 3 is the structural representation of the utility model one embodiment intermediate ion injection device, as shown in Figure 3, the utility model also provides a kind of ion implantation apparatus 200, being used for that wafer 300 is carried out ion injects, comprise ion source 201 and above-mentioned graphite member, ion source control electrode and ion source terminator 211 that described graphite member comprises track tube wall 210 and is arranged at described track tube wall 210 inside.
Wherein said ion source 201 is arranged at the initiating terminal of the direction of motion 30 of edge injection ion in the track tube wall 210, comprises the ion of the impurity element of needs injection; The ion of described impurity element is BF
3, AsH
3Or PH
3
Described ion source control electrode, the direction of motion 30 of edge injection ion is positioned at the place ahead of described ion source 201; Described ion source control electrode comprises extraction electrode 203 forward successively, separates electromagnetic pole 205, accelerating electrode 207 and deflecting electrode 209 along injecting ion motion direction 30.
Described ion source terminator 211 is arranged at the clearing end of edge injection ion motion direction 30 in the track tube wall 210, fixes described wafer 300 on the described ion source terminator 211.
The graphite member that is provided with in can ion implantation apparatus from Fig. 3 has: described ion source control electrode, comprise extraction electrode 203, separate electromagnetic pole 205, accelerating electrode 207 and deflecting electrode 209, and ion terminator 211, above-mentioned parts all are being coated with polysilicon layer.Ion implantation apparatus produces the ion source 201 of impurity element, through the ion source control electrode selected, quicken and deflection in case of necessity after, will inject ionic bombardment in the position to be processed of described wafer 300, thereby finish ion implantation technology.In this process, part does not strike the injection ion (BF at described wafer position to be processed
3, AsH
3, PH
3) strike the graphite member surface, inject ion and also only can inject the Si the inside, do not contact with graphite, can not produce the very strong material of thermoelectric effect, avoid ion to assemble discharge in a large number, cause the punch through damage ion implantation apparatus, prolong the useful life of ion implantation apparatus.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection range of the present utility model is as the criterion when looking claims person of defining.
Claims (7)
1. an ion implantation apparatus graphite member is characterized in that, described graphite member surface coverage has polysilicon layer.
2. ion implantation apparatus graphite member as claimed in claim 1 is characterized in that, described graphite member comprises the track tube wall and is arranged at ion source control electrode and ion source terminator in the described track tube wall.
3. ion implantation apparatus graphite member as claimed in claim 1 or 2 is characterized in that, the thickness of described polysilicon layer is 1mm～2mm.
4. an ion implantation apparatus is used for that wafer is carried out ion and injects, and described ion implantation apparatus comprises ion source and graphite member, it is characterized in that, described graphite member surface coverage has polysilicon layer.
5. ion implantation apparatus as claimed in claim 4 is characterized in that, described graphite member comprises the track tube wall and be arranged at ion source control electrode and ion source terminator in the described track tube wall, wherein,
Described ion source is arranged in the track tube wall along the initiating terminal that injects the ion motion direction;
Described ion source control electrode is positioned at described ionogenic the place ahead along injecting the ion motion direction;
Described ion source terminator is arranged at the clearing end of edge injection ion motion direction in the track tube wall, fixes described wafer on the described ion source terminator.
6. ion implantation apparatus as claimed in claim 4 is characterized in that, described ion source control electrode comprises extraction electrode forward successively, separates electromagnetic pole, accelerating electrode and deflecting electrode along injecting the ion motion direction.
7. as any described ion implantation apparatus in the claim 4 to 6, it is characterized in that the thickness of described polysilicon layer is 1mm～2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120181303XU CN202094078U (en) | 2011-05-31 | 2011-05-31 | Graphite component for ion injection device and ion injection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120181303XU CN202094078U (en) | 2011-05-31 | 2011-05-31 | Graphite component for ion injection device and ion injection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202094078U true CN202094078U (en) | 2011-12-28 |
Family
ID=45369127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120181303XU Expired - Fee Related CN202094078U (en) | 2011-05-31 | 2011-05-31 | Graphite component for ion injection device and ion injection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202094078U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115036201A (en) * | 2022-08-15 | 2022-09-09 | 济南晶正电子科技有限公司 | Device and method for controlling deflection of charged particle beam |
-
2011
- 2011-05-31 CN CN201120181303XU patent/CN202094078U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115036201A (en) * | 2022-08-15 | 2022-09-09 | 济南晶正电子科技有限公司 | Device and method for controlling deflection of charged particle beam |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130419 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130419 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111228 Termination date: 20180531 |