CN115036201A - Device and method for controlling deflection of charged particle beam - Google Patents

Device and method for controlling deflection of charged particle beam Download PDF

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Publication number
CN115036201A
CN115036201A CN202210971053.2A CN202210971053A CN115036201A CN 115036201 A CN115036201 A CN 115036201A CN 202210971053 A CN202210971053 A CN 202210971053A CN 115036201 A CN115036201 A CN 115036201A
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Prior art keywords
deflection
deflection unit
particle beam
voltage
charged particle
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Inventor
韩智勇
刘亚明
胡卉
胡文
李真宇
张秀全
孔霞
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Jinan Jingzheng Electronics Co Ltd
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Jinan Jingzheng Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines

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Abstract

The application discloses a charged particle beam offset control device and method, relates to the technical field of ion implantation, and comprises the following steps: a particle source, an acceleration voltage, and a deflection voltage, wherein: the positive and negative voltage plates of the accelerating voltage are respectively provided with an emission port, and charged particle beams emitted by the particle source pass through the accelerating voltage through the emission ports; the deflection voltage comprises a first deflection unit and a second deflection unit, the field intensity directions of the first deflection unit and the second deflection unit are vertical to the field intensity direction of the acceleration voltage, the charged particle beams horizontally enter the first deflection unit and the second deflection unit after passing through the acceleration voltage, and the field intensity directions of the first deflection unit and the second deflection unit are opposite. The deflection unit with the opposite field intensity direction is used for offsetting the deflection of the charged particle beam in the deflection unit. The ion beam can be horizontally implanted into the wafer, and the included angles between the ion beam injected into the wafer and the surface of the wafer are the same in terms of the whole surface of the wafer, so that the uniformity of the ion implantation depth in the wafer is improved.

Description

Device and method for controlling deflection of charged particle beam
Technical Field
The present disclosure relates to ion implantation technologies, and in particular, to a device and a method for controlling offset of a charged particle beam.
Background
The substance is ionized by the ion source to form a spatial beam spot with certain energy, namely an ion beam with positive and negative charges. When the ion beam strikes the solid material, the ion beam is resisted by the solid material and then slowly decreases in speed, and finally stays in the solid material, which is called ion implantation. In the electronics industry, ion implantation is an important doping technique in microelectronics and also an important means for controlling the threshold voltage of MOSFETs. Ion implantation is therefore an indispensable tool in the contemporary fabrication of large-scale integrated circuits.
In the current ion implantation equipment, the ion beam is implanted into the wafer in a one-dimensional scanning manner, and the ion beam is emitted from the scanning source and implanted into the wafer. The atoms of the crystal are arranged regularly in space, and the space lattice with the atoms regularly arranged in the crystal is called as a lattice. When the ion beam is used for implanting into the wafer, collision similar to that of atoms in the wafer occurs, the energy of the ion beam is reduced in each collision, and the ion beam is finally stopped due to energy exhaustion. The greater the number of lattices penetrated by the ion beam, the less collisions with atoms in the wafer, and the greater the corresponding depth of incidence of the ion beam.
In the implantation mode, when the ion beam is emitted to the surface of the wafer, a certain included angle is formed between the ion beam and the surface of the wafer, and the included angle between the edge beam of the ion beam and the surface of the wafer is different from the included angle between the middle beam of the ion beam and the surface of the wafer. Due to the different included angles between the ion beam and the wafer surface, the number of lattices penetrated by the ion beam in the wafer is different, and the ion implantation depth is different. The defects caused by the scanning implantation are more significant as the wafer size becomes larger.
Disclosure of Invention
The application provides a charged particle beam offset control device and method, which are used for solving the technical problem that in the prior art, the included angles between the injected charged particle beam and the surface of a wafer are different, so that the depth of ion injection in the wafer is different.
In order to solve the technical problem, the embodiment of the application discloses the following technical scheme:
in a first aspect, some embodiments of the present application disclose a charged particle beam deflection control apparatus, comprising: a particle source, an acceleration voltage, and a deflection voltage, wherein:
emitting ports are respectively arranged on the positive and negative voltage plates of the accelerating voltage, and charged particle beams emitted by the particle source pass through the accelerating voltage through the emitting ports;
the deflection voltage comprises a first deflection unit and a second deflection unit, the field intensity directions of the first deflection unit and the second deflection unit are both vertical to the field intensity direction of the acceleration voltage, the charged particle beam passes through the acceleration voltage and then horizontally enters the first deflection unit and the second deflection unit, and the field intensity directions of the first deflection unit and the second deflection unit are opposite.
Optionally, in the above-mentioned charged particle beam deflection control device, the deflection control device includes at least one set of the deflection voltages.
Optionally, in the above-mentioned charged particle beam deflection control device, the deflection voltage includes at least N first deflection units and N second deflection units, where N ≧ 1.
Alternatively, in the above-described charged particle beam deflection control device, a voltage level of the first deflection unit is equal to a voltage level of the second deflection unit, a distance between plates of the first deflection unit is equal to a distance between plates of the second deflection unit, and a plate length of the first deflection unit is equal to a plate length of the second deflection unit.
Alternatively, in the above-described displacement control device for a charged particle beam, the charged particle beam includes ions or electrons, wherein the ions include one or more of helium ions, hydrogen ions, nitrogen ions, oxygen ions, or argon ions.
Alternatively, in the above-described charged particle beam deflection control device, the acceleration voltage may be in a range of 10KV to 2000 KV.
In a second aspect, some embodiments of the present application disclose a charged particle beam deflection control method, using any one of the above-mentioned charged particle beam deflection control apparatuses, the method comprising:
controlling a charged particle beam generated by a particle source to be accelerated through an acceleration voltage, and emitting a horizontal particle beam through an emission port on a voltage plate in the acceleration voltage;
controlling a horizontal particle beam to be irradiated into a first deflection unit of a deflection voltage to deflect to obtain a first deflected particle beam;
and controlling a second deflection unit of the deflection voltage to irradiate the first deflected particle beam to deflect to obtain a second deflected particle beam, wherein the field intensity directions of the second deflection unit and the first deflection unit are opposite, the transverse velocity of the charged particle beam is unchanged in the deflection voltage, the longitudinal velocity is increased to a maximum value from an initial value of the first deflection unit, and is attenuated to the initial value when the charged particle beam irradiates the second deflection unit.
Optionally, in the above method for controlling the deflection of a charged particle beam, the method further comprises: and controlling the ratio of the voltage in the first deflection unit multiplied by the length of the plate length to the distance between the plates to be equal to the ratio of the voltage in the second deflection unit multiplied by the length of the plate length to the distance between the plates.
Optionally, in the above method for controlling a deflection of a charged particle beam, when the deflection control device includes a plurality of sets of the deflection voltages, the method further includes:
calculating the sum of the plate length of a plurality of first deflection units in a plurality of groups of deflection voltages to obtain a first transverse displacement;
calculating the sum of the plate length of a plurality of second deflection units in the plurality of groups of deflection voltages to obtain a second transverse displacement;
and summing the first transverse displacement and the second transverse displacement to obtain the transverse total displacement of the charged particle beam.
Optionally, in the above method for controlling a deflection of a charged particle beam, when the deflection control device includes a plurality of sets of the deflection voltages, the method further includes:
obtaining a plurality of first longitudinal displacements according to the voltages, the plate length, the inter-plate distance and the acceleration voltage of a plurality of first deflection units in the plurality of groups of deflection voltages;
obtaining a plurality of second longitudinal displacements according to the voltages, the plate length, the inter-plate distance and the acceleration voltage of a plurality of second deflection units in the plurality of groups of deflection voltages;
summing the plurality of first longitudinal displacements and the plurality of second longitudinal displacements to obtain a total longitudinal displacement of the charged particle beam.
Compared with the prior art, the beneficial effect of this application is:
the application provides a device and a method for controlling the offset of charged particle beams, wherein the charged particle beams emitted by a particle source enter a positive voltage plate and a negative voltage plate of an accelerating voltage through an emission port on the voltage plate to be accelerated and are emitted from the other emission port. The field intensity directions of the first deflection unit and the second deflection unit in the deflection voltage are both perpendicular to the field intensity direction of the acceleration voltage, and the field intensity directions of the first deflection unit and the second deflection unit are opposite. The charged particle beam emitted by the acceleration voltage horizontally enters the first deflection unit to be deflected, and then enters the second deflection unit to be deflected in the direction opposite to the direction in which the charged particle beam is deflected in the first deflection unit, so that the charged particle beam is deflected in the second deflection unit to offset the deflection of the charged particle beam in the first deflection unit, and the charged particle beam is horizontally emitted. In the offset control method, the deflection of the charged particle beam in the deflection unit is counteracted by the deflection unit with opposite field intensity directions. Therefore, if the ion beam is horizontally injected into the wafer during ion beam injection, the included angle between the ion beam injected into the wafer and the surface of the wafer is 90 degrees for the whole surface of the wafer, thereby improving the uniformity of the depth of ion injection in the wafer.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a basic structure of a device for controlling a shift of a charged particle beam according to an embodiment of the present invention;
fig. 2 is a diagram illustrating a state of the device for controlling the deflection of a charged particle beam according to an embodiment of the present invention;
FIG. 3 is another state diagram of a charged particle beam deviation control device according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating another state of the deviation control apparatus for charged particle beam according to an embodiment of the present invention;
description of reference numerals: 1. a particle source; 11. a charged particle beam; 2. an acceleration voltage; 21. an emission port; 3. a deflection voltage; 31. a first deflection unit; 32. a second deflection unit; 4. and (5) a wafer.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Currently, in an ion implantation apparatus, an ion beam is implanted into a wafer in a one-dimensional scanning manner, and the ion beam needs to be scanned to the entire surface of the wafer to complete the ion implantation. When ion implantation is carried out on a wafer, an ion beam is injected into the surface of the wafer to form a certain included angle with the surface of the wafer, and the included angle between the edge beam current of the ion beam and the surface of the wafer is different from the included angle between the middle beam current and the surface of the wafer. Due to the different included angles between the ion beam and the wafer surface, the number of lattices penetrated by the ion beam in the wafer is different, and the ion implantation depth is different. Therefore, it is necessary to control the deflection of the ion beam. In addition, electron beam oscilloscopes also suffer from excessive edge angle deflection for electrons. In view of the above problems, the present application provides a device for controlling the deflection of a charged particle beam in some embodiments.
The following describes a charged particle beam deflection control apparatus according to the present application with reference to the drawings.
Referring to fig. 1, a basic structure of a device for controlling the offset of a charged particle beam according to an embodiment of the present invention is schematically shown. Referring to fig. 1, the apparatus for controlling the deflection of a charged particle beam according to the present invention includes: a particle source 1, an acceleration voltage 2 and a deflection voltage 3. The charged particle beam 11 emitted by the particle source 1 may be ions or electrons, and if the charged particle beam is ions, it may include one or more of helium ions, hydrogen ions, nitrogen ions, oxygen ions, or argon ions. The charged particle beam 11 is accelerated by the acceleration voltage 2 and deflected by the deflection voltage 3, and then can be incident on a crystal such as a wafer 4 in a horizontal direction.
In some embodiments, the accelerating voltage 2 may include positive and negative voltage plates, on which the emission ports 21 are respectively disposed, and the charged particle beam 11 enters the accelerating voltage 2 through the emission port of one voltage plate and exits through the emission port of the other voltage plate. The two emission ports of the positive and negative platens are horizontally arranged so that the charged particle beam 11 horizontally emits an accelerating voltage 2.
When the charged particle beam 11 has a positive charge, it is injected through a positive voltage plate and is emitted from a negative voltage plate. On the contrary, when the charged particle beam 11 has a negative charge, it is injected through the negative voltage plate and is emitted from the positive voltage plate.
In some embodiments, the acceleration voltage 2 may range from 10KV to 2000 KV.
In connection with fig. 1, the deflection voltage 3 comprises a first deflection unit 31 and a second deflection unit 32. Here, the first deflection unit 31 and the second deflection unit 32 may be both positive and negative pressing plates. The first deflection unit 31 and the second deflection unit 32 both have field strength directions perpendicular to the field strength direction of the acceleration voltage 2, and the field strength directions of the first deflection unit 31 and the second deflection unit 32 are opposite. The charged particle beam 11 is horizontally emitted by the acceleration voltage 2, then is sequentially incident on the first deflection unit 31 and the second deflection unit 32, and is controlled by the first deflection unit 31 and the second deflection unit 32.
Within said deflection voltage 3, the transverse velocity of the charged particle beam 11
Figure 332195DEST_PATH_IMAGE001
Constant, longitudinal rate
Figure 124702DEST_PATH_IMAGE002
Increasing from an initial value of the incident light into the first deflection unit to a maximum value and attenuating to an initial value upon exiting the second deflection unit. The charged particle beam 11 is horizontally advanced immediately after the first deflection unit is irradiated, and the longitudinal velocity thereof is
Figure 750112DEST_PATH_IMAGE002
Is 0, the longitudinal velocity input to the first deflection unit 31
Figure 489529DEST_PATH_IMAGE003
Is 0. Longitudinal velocity just after ejection from the first deflection unit 31
Figure 162956DEST_PATH_IMAGE002
Reaches the maximum value
Figure 828161DEST_PATH_IMAGE004
And then the longitudinal velocity at the time of output from the second deflection unit 32 via the control of the second deflection unit 32
Figure 970561DEST_PATH_IMAGE005
Also 0, to achieve horizontal ejection.
As described above, in the present invention, the first deflection unit 31 and the second deflection unit 32 deflect the charged particle beam 11, and the charged particle beam can be emitted from the particle source 1 by factors such as the voltage level of the first deflection unit 31 and the second deflection unit 32 and then scanned to different positions on the surface of the wafer 4. Meanwhile, since the field strengths of the first deflection unit 31 and the second deflection unit 32 are opposite, the longitudinal velocity of the charged particle beam 11 can be increased from an initial value to a maximum value and then attenuated to the initial value to achieve horizontal implantation onto the wafer surface.
The following describes the deflection control process in detail with reference to the drawings.
Fig. 2 is a state diagram of a device for controlling a shift of a charged particle beam according to an embodiment of the present invention. As shown in FIG. 2, a charged particle beam 11 is used
Figure 749554DEST_PATH_IMAGE006
And
Figure 762641DEST_PATH_IMAGE007
for example, assume that the acceleration voltage 2 has a voltage level of
Figure 349480DEST_PATH_IMAGE008
The distance between the positive and negative voltage plates is
Figure 212131DEST_PATH_IMAGE009
The voltage of the first deflection unit 31 is of the magnitude
Figure 293351DEST_PATH_IMAGE010
The distance between the positive and negative voltage plates is
Figure 879053DEST_PATH_IMAGE011
The length of the electric pressure plate is
Figure 685728DEST_PATH_IMAGE012
The voltage of the second deflection unit 32 is of the magnitude
Figure 802720DEST_PATH_IMAGE013
The distance between the positive and negative voltage plates is
Figure 920587DEST_PATH_IMAGE014
The length of the electric pressure plate is
Figure 173845DEST_PATH_IMAGE015
。
The charged particle beam 11 is horizontally incident on the first deflection unit 31 through the positive and negative platens of the acceleration voltage 2 in sequence. Then a distance of
Figure 620263DEST_PATH_IMAGE016
Of the optical system. Then enters the second deflection unit 32 and takes place at a distance of
Figure 145922DEST_PATH_IMAGE017
Of the optical system. In connection with the above description of the variation of the velocity of the charged particle beam 11 within the deflection unit, this is expressed by the formula:
Figure 365682DEST_PATH_IMAGE018
in the formula (I), the compound is shown in the specification,
Figure 971981DEST_PATH_IMAGE019
for the acceleration of the charged particle beam within the first deflection unit,
Figure 87836DEST_PATH_IMAGE020
the time the charged particle beam is within the first deflection unit.
Figure 884147DEST_PATH_IMAGE021
For the acceleration of the charged particle beam within the first deflection unit,
Figure 110860DEST_PATH_IMAGE022
is the time the charged particle beam is within the first deflection unit.
Because of the fact that
Figure 322399DEST_PATH_IMAGE023
The following results were obtained:
Figure 310952DEST_PATH_IMAGE024
and because:
Figure 155412DEST_PATH_IMAGE025
Figure 218439DEST_PATH_IMAGE026
therefore, the number of the first and second electrodes is increased,
Figure 238479DEST_PATH_IMAGE027
Figure 991409DEST_PATH_IMAGE028
a distance of
Figure 713377DEST_PATH_IMAGE016
The formula for the deflection of (a) is as follows:
Figure 547472DEST_PATH_IMAGE029
a distance of
Figure 405707DEST_PATH_IMAGE017
The formula for the deflection of (c) is as follows:
Figure 590921DEST_PATH_IMAGE030
in some embodiments, the voltage magnitude of the first deflection unit 31
Figure 331344DEST_PATH_IMAGE010
Voltage level of the second deflection unit 32
Figure 467665DEST_PATH_IMAGE013
Equal, the distance between the plates of said first deflection unit 31
Figure 727876DEST_PATH_IMAGE011
Distance between the plates of the second deflection unit 32
Figure 28801DEST_PATH_IMAGE014
Equal, the plate length of said first deflection unit 31
Figure 522099DEST_PATH_IMAGE012
And a plate length of the second deflection unit 32
Figure 432417DEST_PATH_IMAGE015
So that the deflection distance occurring in the first deflection unit 31 is equal to the deflection distance occurring in the second deflection unit 32.
In some embodiments, said offset control means comprises at least one set of said deflection voltages 3. Fig. 3 is another state diagram of a charged particle beam offset control apparatus according to an embodiment of the present invention. Taking two sets of deflection voltages as an example in fig. 3, it is apparent from fig. 2 and 3 that the larger the number of the first deflection units 31 and the second deflection units 32, the larger the deflection distance of the charged particle beam 11 within the deflection voltage 3.
In some embodiments, the deflection voltage 3 comprises at least N first deflection units 31 and N second deflection units 32, where N ≧ 1.
Taking the example that the offset control device comprises two groups of deflection voltages 3, each group of deflection voltages 3 comprises a first deflection unit 31 and a second deflection unit 32, the arrangement sequence of the deflection units can be positive, negative, positive, or negative, positive, negative, positive and negative, according to the polarity of the electric pressing plate on one side.
Taking the example that the offset control device comprises a group of deflection voltages 3, and the deflection voltages 3 comprise two first deflection units 31 and two second deflection units 32, the polarity of the voltage plate on one side is only seen, and the arrangement sequence of the deflection units can be positive, negative, and negative, positive and positive.
In some embodiments, the voltage magnitudes, the plate-to-plate distances, and the plate length lengths of the plurality of first deflection voltages in different sets of deflection voltages 3 may be different, as long as the ratio of the voltage of the first deflection voltage multiplied by the plate length to the plate-to-plate distance in the same set of deflection voltages 3 is the same as the ratio of the voltage of the second deflection voltage multiplied by the plate length to the plate-to-plate distance.
In some embodiments, within a set of deflection voltages 3, the voltage magnitude of the first deflection unit 31 is equal to the voltage magnitude of the second deflection unit 32, the inter-plate distance of the first deflection unit 31 is equal to the inter-plate distance of the second deflection unit 32, and the plate length of the first deflection unit 31 is equal to the plate length of the second deflection unit 32.
Fig. 4 is another usage diagram of the apparatus for controlling the offset of a charged particle beam according to an embodiment of the present invention. In FIG. 4, a charged particle beam 11 is used as electrons
Figure 373566DEST_PATH_IMAGE031
As an example, electrons
Figure 78348DEST_PATH_IMAGE031
It is necessary to inject the light through the negative voltage plate of the acceleration voltage 2, and to inject the light through the positive voltage plate of the acceleration voltage 2, and to horizontally inject the deflection voltage 3.
The above-described charged particle beam deflection control process will be described with reference to several embodiments.
Example 1
Figure 311140DEST_PATH_IMAGE006
The ion beam deflection control process is as follows:
Figure 743258DEST_PATH_IMAGE006
ion beam source generating charge
Figure 978062DEST_PATH_IMAGE006
The ion beam, which may be referred to herein in connection with figure 2,
Figure 883438DEST_PATH_IMAGE006
ion beam passing acceleration voltage
Figure 289012DEST_PATH_IMAGE008
（
Figure 121226DEST_PATH_IMAGE008
=10KV,
Figure 990962DEST_PATH_IMAGE009
The accelerated levels of = 1M) are sequentially input to the first deflection unit 31 (
Figure 37547DEST_PATH_IMAGE010
=10KV，
Figure 242001DEST_PATH_IMAGE012
=1M，
Figure 15922DEST_PATH_IMAGE011
= 1M) and a second deflection unit 32: (
Figure 428580DEST_PATH_IMAGE013
=10KV，
Figure 413110DEST_PATH_IMAGE015
=1M，
Figure 199800DEST_PATH_IMAGE014
= 1M), the field strength of the first deflection unit 31 and the second deflection unit 32 are opposite. Throughout the input-output process of controlling deflection by the first deflection unit 31 and the second deflection unit 32,
Figure 26680DEST_PATH_IMAGE006
transverse velocity of the ion beam is
Figure 621740DEST_PATH_IMAGE001
Is 1.38X 10 6 m/s, transverse unstressed, longitudinal velocity
Figure 993816DEST_PATH_IMAGE002
From a speed of 0 when entering the first deflection unit 31 to a speed of 0 when entering the second deflection unit 32
Figure 910212DEST_PATH_IMAGE004
And the velocity when output by the second deflecting unit 32 is 0.
Wherein, the first and the second end of the pipe are connected with each other,
Figure 838985DEST_PATH_IMAGE032
，
Figure 318246DEST_PATH_IMAGE033
。
example 2
Figure 408693DEST_PATH_IMAGE006
The ion beam deflection control process is as follows:
Figure 546806DEST_PATH_IMAGE006
ion beam source generating charge
Figure 200642DEST_PATH_IMAGE006
The ion beam, which may be referred to herein in connection with figure 2,
Figure 239136DEST_PATH_IMAGE006
ion beam passing accelerating voltage
Figure 999019DEST_PATH_IMAGE008
（
Figure 841073DEST_PATH_IMAGE008
=2000KV，
Figure 908386DEST_PATH_IMAGE009
(1M) are sequentially inputted to the first deflecting unit 31 =
Figure 37273DEST_PATH_IMAGE010
=10KV，
Figure 469522DEST_PATH_IMAGE012
=1M，
Figure 579299DEST_PATH_IMAGE011
= 1M) and a second deflection unit 32: (
Figure 637253DEST_PATH_IMAGE013
=10KV，
Figure 119181DEST_PATH_IMAGE015
=1M，
Figure 43972DEST_PATH_IMAGE014
= 1M), the field strength of the first deflection unit 31 and the second deflection unit 32 are opposite. Throughout the input-output process of controlling deflection by the first deflection unit 31 and the second deflection unit 32,
Figure 673668DEST_PATH_IMAGE006
transverse velocity of the ion beam is
Figure 253422DEST_PATH_IMAGE001
Is 6.19X 10 6 m/s, transverse unstressed, longitudinal velocity
Figure 121015DEST_PATH_IMAGE002
From a speed of 0 when entering the first deflection unit 31 to a speed of 0 when entering the second deflection unit 32
Figure 927691DEST_PATH_IMAGE004
The velocity when output by the second deflecting unit 32 is 0.
Wherein the content of the first and second substances,
Figure 513524DEST_PATH_IMAGE034
，
Figure 959287DEST_PATH_IMAGE035
。
example 3
Figure 743703DEST_PATH_IMAGE006
The ion beam deflection control process is as follows:
Figure 875607DEST_PATH_IMAGE006
ion beam source generating charge
Figure 450201DEST_PATH_IMAGE006
The ion beam, which may be referred to herein in connection with figure 2,
Figure 138803DEST_PATH_IMAGE006
ion beam passing acceleration voltage
Figure 433518DEST_PATH_IMAGE008
（
Figure 782328DEST_PATH_IMAGE008
=50KV，
Figure 670650DEST_PATH_IMAGE009
(1M) are sequentially inputted to the first deflecting unit 31 =
Figure 133249DEST_PATH_IMAGE010
=20KV，
Figure 95520DEST_PATH_IMAGE012
=1M，
Figure 615232DEST_PATH_IMAGE011
= 1M) and a second deflection unit 32: (
Figure 912221DEST_PATH_IMAGE013
=20KV，
Figure 411466DEST_PATH_IMAGE015
=1M，
Figure 526446DEST_PATH_IMAGE014
= 1M), the field strength of the first deflection unit 31 and the second deflection unit 32 are opposite. Throughout the input-output process of controlling deflection by the first deflection unit 31 and the second deflection unit 32,
Figure 984104DEST_PATH_IMAGE006
transverse velocity of the ion beam is
Figure 752077DEST_PATH_IMAGE001
Is 1.54X 10 6 m/s, transverse unstressed, longitudinal velocity
Figure 320593DEST_PATH_IMAGE002
From a speed of 0 when entering the first deflection unit 31 to a speed of 0 when entering the second deflection unit 32
Figure 506724DEST_PATH_IMAGE004
The velocity when output by the second deflecting unit 32 is 0.
Wherein the content of the first and second substances,
Figure 636747DEST_PATH_IMAGE036
，
Figure 393482DEST_PATH_IMAGE037
。
example 4
Figure 795382DEST_PATH_IMAGE006
The ion beam deflection control process is as follows:
Figure 117910DEST_PATH_IMAGE006
ion beam source generating charge
Figure 418835DEST_PATH_IMAGE006
The ion beam, which may be referred to herein in connection with figure 3,
Figure 662865DEST_PATH_IMAGE006
ion beam passing acceleration voltage
Figure 25713DEST_PATH_IMAGE008
（
Figure 170125DEST_PATH_IMAGE008
=50KV，
Figure 874907DEST_PATH_IMAGE009
= 1M), wherein the first deflection unit 31: (i) is configured to input two deflection voltages in sequence for deflection and then output them horizontally after acceleration, and
Figure 435594DEST_PATH_IMAGE010
=20KV，
Figure 336554DEST_PATH_IMAGE012
=1M，
Figure 836937DEST_PATH_IMAGE011
= 1M) and a second deflection unit 32: (
Figure 742314DEST_PATH_IMAGE013
=20KV，
Figure 413467DEST_PATH_IMAGE015
=1M，
Figure 931167DEST_PATH_IMAGE014
= 1M), the field strengths of the first deflection unit 31 and the second deflection unit 32 are opposite, of course the field strengths of the two sets of first deflection units 31 are identical and the field strengths of the two sets of second deflection units 32 are identical. In the whole input-output process of controlling deflection by two deflection voltages,
Figure 295242DEST_PATH_IMAGE006
transverse velocity of the ion beam is
Figure 138564DEST_PATH_IMAGE001
Is 1.54X 10 6 m/s, transverse unstressed, longitudinal velocity
Figure 77439DEST_PATH_IMAGE002
From a speed of 0 when entering the first deflection unit 31 to a speed of 0 when entering the second deflection unit 32
Figure 867671DEST_PATH_IMAGE004
And the velocity when output by the second deflecting unit 32 is 0.
Wherein the content of the first and second substances,
Figure 795176DEST_PATH_IMAGE038
，
Figure 779706DEST_PATH_IMAGE039
，
Figure 972921DEST_PATH_IMAGE040
。
example 5
Figure 127697DEST_PATH_IMAGE031
The ion beam deflection control process is as follows:
Figure 191599DEST_PATH_IMAGE031
ion beam source generating charge
Figure 94833DEST_PATH_IMAGE031
The ion beam, which may be referred to herein in connection with figure 4,
Figure 11229DEST_PATH_IMAGE031
ion beam passing acceleration voltage
Figure 674423DEST_PATH_IMAGE008
（
Figure 310941DEST_PATH_IMAGE008
=10KV，
Figure 899923DEST_PATH_IMAGE009
(1M) are sequentially inputted to the first deflecting unit 31 =
Figure 598888DEST_PATH_IMAGE041
=10KV，
Figure 832817DEST_PATH_IMAGE012
=1M，
Figure 871311DEST_PATH_IMAGE011
= 1M) and a second deflection unit 32: (
Figure 365615DEST_PATH_IMAGE013
=10KV，
Figure 207670DEST_PATH_IMAGE015
=1M,
Figure 212666DEST_PATH_IMAGE014
= 1M), the field strength of the first deflection unit 31 and the second deflection unit 32 are opposite. Throughout the input-output process of controlling deflection by the first deflection unit 31 and the second deflection unit 32,
Figure 810394DEST_PATH_IMAGE031
transverse velocity of the ion beam is
Figure 304960DEST_PATH_IMAGE001
Is 5.9X 10 6 m/s, transverse unstressed, longitudinal velocity
Figure 414736DEST_PATH_IMAGE042
From a speed of 0 when entering the first deflection unit 31 to a speed of 0 when entering the second deflection unit 32
Figure 941533DEST_PATH_IMAGE002
The velocity when output by the second deflecting unit 32 is 0.
Wherein the content of the first and second substances,
Figure 220198DEST_PATH_IMAGE043
，
Figure 324814DEST_PATH_IMAGE044
。
to further illustrate the process of controlling the deflection of a charged particle beam, some embodiments of the present application further provide a method of controlling the deflection of a charged particle beam, the method comprising the steps of:
first, a charged particle beam 11 generated by a particle source 1 is controlled to be accelerated by an acceleration voltage 2, and a horizontal particle beam is emitted through an emission port 21 on a voltage plate in the acceleration voltage 2.
Then, the horizontal particle beam is incident on the first deflection unit 31 of the deflection voltage 3 and deflected, thereby obtaining a first deflected particle beam.
Finally, the second deflection unit 31 for controlling the first deflected particle beam to be incident on the deflection voltage 3 is deflected, and the second deflected particle beam is obtained. The field intensity directions of the second deflection unit and the first deflection unit are opposite, so that the transverse velocity of the charged particle beam is unchanged in the deflection voltage, the longitudinal velocity is increased to the maximum value from an initial value of the charged particle beam entering the first deflection unit, and the charged particle beam is attenuated to the initial value when exiting the second deflection unit.
In some embodiments, the method further comprises: the ratio of the voltage multiplied by the length of the plate length in the first deflection unit 31 to the distance between the plates is controlled to be equal to the ratio of the voltage multiplied by the length of the plate length in the second deflection unit 32 to the distance between the plates. The formula is expressed as follows:
Figure 610302DEST_PATH_IMAGE028
in some embodiments, when the offset control device includes a plurality of sets of the deflection voltages, the method further includes: the sum of the lengths of the plate lengths of the plurality of first deflection units 31 in the plurality of sets of deflection voltages is calculated to obtain a first lateral displacement. The sum of the lengths of the plate lengths of the plurality of second deflection units 32 within the plurality of sets of deflection voltages is calculated to obtain a second lateral displacement. And summing the first transverse displacement and the second transverse displacement to obtain the transverse total displacement of the charged particle beam. The calculation formula of the transverse total displacement X is as follows:
Figure 488259DEST_PATH_IMAGE045
wherein n is the number of sets of the deflection voltages in the offset control device.
In some embodiments, when the offset control device comprises a plurality of sets of the deflection voltages, the method further comprises: and obtaining a plurality of first longitudinal displacements according to the voltages, the plate length, the plate-to-plate distance and the acceleration voltage of the plurality of first deflection units in the plurality of groups of deflection voltages. And obtaining a plurality of second longitudinal displacements according to the voltages, the plate length, the plate-to-plate distance and the acceleration voltage of the plurality of second deflection units in the plurality of groups of deflection voltages. Summing the plurality of first longitudinal displacements and the plurality of second longitudinal displacements to obtain a total longitudinal displacement of the charged particle beam. The calculation formula of the longitudinal total displacement Y is as follows:
Figure 385546DEST_PATH_IMAGE046
in the offset control method, the deflection of the charged particle beam in the deflection unit is counteracted by the deflection unit with opposite field intensity directions. Therefore, if the ion beam is horizontally injected into the wafer during ion beam injection, the included angle between the ion beam injected into the wafer and the surface of the wafer is 90 degrees for the whole surface of the wafer, thereby improving the uniformity of the depth of ion injection in the wafer. That is, the ion beam is focused in a specific depth range of the wafer during ion beam implantation by controlling the consistent angle of the ion beam injected into the surface of the wafer, which is beneficial to the process of later stripping and the like.
Since the above embodiments are all described by referring to and combining with other embodiments, the same portions are provided between different embodiments, and the same and similar portions between the various embodiments in this specification may be referred to each other. And will not be described in detail herein.
It is noted that, in this specification, relational terms such as "first" and "second," and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a circuit structure, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such circuit structure, article, or apparatus. Without further limitation, the presence of an element identified by the phrase "comprising an … …" does not exclude the presence of other like elements in a circuit structure, article or device comprising the element.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
The above-described embodiments of the present application do not limit the scope of the present application.

Claims (10)

1. A device for controlling deflection of a charged particle beam, said device comprising: a particle source (1), an acceleration voltage (2) and a deflection voltage (3), wherein:
emitting ports (21) are respectively arranged on the positive and negative voltage plates of the accelerating voltage (2), and the charged particle beam (11) emitted by the particle source (1) passes through the accelerating voltage (2) through the emitting ports (21);
the deflection voltage (3) comprises a first deflection unit (31) and a second deflection unit (32), the field intensity directions of the first deflection unit (31) and the second deflection unit (32) are both vertical to the field intensity direction of the acceleration voltage (2), the charged particle beam (11) passes through the acceleration voltage (2) and then horizontally enters the first deflection unit (31) and the second deflection unit (32), and the field intensity directions of the first deflection unit (31) and the second deflection unit (32) are opposite.
2. Charged particle beam deflection control device according to claim 1, characterized in that the deflection control device comprises at least one set of the deflection voltages (3).
3. The device for controlling the deflection of a charged particle beam according to claim 1, wherein the deflection voltage (3) comprises at least N first deflection units (31) and N second deflection units (32), wherein N ≧ 1.
4. The device for controlling the deflection of a charged particle beam according to claim 1, wherein the voltage level of the first deflection unit (31) is equal to the voltage level of the second deflection unit (32), the distance between the plates of the first deflection unit (31) is equal to the distance between the plates of the second deflection unit (32), and the length of the plate length of the first deflection unit (31) is equal to the length of the plate length of the second deflection unit (32).
5. The device for controlling the deflection of a charged particle beam according to claim 1, wherein the charged particle beam (11) comprises ions or electrons, wherein the ions comprise one or more of helium ions, hydrogen ions, nitrogen ions, oxygen ions or argon ions.
6. The device for charged particle beam deflection control according to claim 1, wherein the acceleration voltage (2) is in the range of 10KV-2000 KV.
7. A method for controlling the deflection of a charged particle beam, using the device for controlling the deflection of a charged particle beam according to any one of claims 1 to 6, the method comprising:
controlling a charged particle beam generated by a particle source to be accelerated through an acceleration voltage, and emitting a horizontal particle beam through an emission port on a voltage plate in the acceleration voltage;
controlling a horizontal particle beam to be irradiated into a first deflection unit of a deflection voltage to deflect to obtain a first deflected particle beam;
and a second deflection unit for controlling the first deflected particle beam to enter a deflection voltage to deflect to obtain a second deflected particle beam, wherein the field intensity directions of the second deflection unit and the first deflection unit are opposite, the transverse velocity of the charged particle beam is unchanged in the deflection voltage, the longitudinal velocity is increased to a maximum value from an initial value entering the first deflection unit, and the longitudinal velocity is attenuated to the initial value when exiting the second deflection unit.
8. The method of controlling the deflection of a charged particle beam according to claim 7, further comprising:
and controlling the ratio of the voltage in the first deflection unit multiplied by the length of the plate length to the distance between the plates to be equal to the ratio of the voltage in the second deflection unit multiplied by the length of the plate length to the distance between the plates.
9. The method of claim 7, wherein when said deflection control means comprises a plurality of sets of said deflection voltages, said method further comprises:
calculating the sum of the plate length of a plurality of first deflection units in a plurality of groups of deflection voltages to obtain a first transverse displacement;
calculating the sum of the plate length of a plurality of second deflection units in the plurality of groups of deflection voltages to obtain a second transverse displacement;
and summing the first transverse displacement and the second transverse displacement to obtain the transverse total displacement of the charged particle beam.
10. The method of claim 7, wherein when said deflection control means comprises a plurality of sets of said deflection voltages, said method further comprises:
obtaining a plurality of first longitudinal displacements according to the voltages, the plate length, the inter-plate distance and the acceleration voltage of a plurality of first deflection units in the plurality of groups of deflection voltages;
obtaining a plurality of second longitudinal displacements according to the voltages of a plurality of second deflection units in the plurality of groups of deflection voltages, the length of the plates, the distance between the plates and the magnitude of the acceleration voltage;
summing the plurality of first longitudinal displacements and the plurality of second longitudinal displacements to obtain a total longitudinal displacement of the charged particle beam.
CN202210971053.2A 2022-08-15 2022-08-15 Device and method for controlling deflection of charged particle beam Pending CN115036201A (en)

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Application publication date: 20220909