CN202092090U - Controllable selenium steam or sulfur steam generation device for selenylation or sulfuration processing - Google Patents
Controllable selenium steam or sulfur steam generation device for selenylation or sulfuration processing Download PDFInfo
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- CN202092090U CN202092090U CN2011200939115U CN201120093911U CN202092090U CN 202092090 U CN202092090 U CN 202092090U CN 2011200939115 U CN2011200939115 U CN 2011200939115U CN 201120093911 U CN201120093911 U CN 201120093911U CN 202092090 U CN202092090 U CN 202092090U
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Abstract
The utility model relates to a controllable selenium steam or sulfur steam generation device for selenylation or sulfuration processing, comprising a material-storing chamber having a material inlet and a material outlet, a continuous material feeding means having a material inlet and a material outlet, and a high-temperature vaporizing chamber having a material inlet and a material outlet. The material outlet of the material-storing chamber is connected to the material inlet of the material feeding means, and the material outlet of the material feeding means is connected to the material inlet of the vaporizing chamber. The storage function and the heating function of the Se steam generation device are separated, and quite a large solid Se source material-storing chamber is capable of being filled with adequate amount required by continuous production. A small high-temperature vaporizing chamber ensures the rapid vaporization of the solid Se and the activity of Se, and energy consumption of heating is reduced. The continuous material feeding means sends the solid Se in the material-storing chamber to the high-temperature vaporizing chamber, generating selenium steam. The on-off of Se steam and the concentration of Se are controlled by controlling the material-feeding speed.
Description
Technical field
The utility model relates to a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, the preparation facilities of the controlled selenium steam of high activity when particularly preparing the CIGS solar battery obsorbing layer.
Background technology
This kind of hull cell in solar cell and since in the manufacturing employed raw material amount seldom, the probability that the shortage of raw material supply causes the phenomenon of big bulge in price to take place is lower, so hull cell is expected to realize at a low price target efficiently very much.Wherein, CIGS (CuIn1-xGaxSe2 or CIGS) film be counted as be hopeful most in all thin film solar cell technology to realize at a low price, the photovoltaic material of efficient, stable performance.Reason mainly contain following some: 1) band gap of CIGS can be regulated and control, and reaches the numerical value that is complementary with solar spectrum; 2) performance of CIGS thin film solar cell is highly stable, has very strong capability of resistance to radiation, is suitable as very much the generating parts of Aerospace Satellite; 3) the CIGS film is a kind of direct band gap compound semiconductor materials, and is very high to the absorption coefficient of sunshine; 4) the more important thing is that in the hull cell and membrane photovoltaic component of various materials, the CIGS thin film solar cell has all been obtained the highest conversion efficiency.
The key component of CIGS solar cell is the absorbed layer CIGS thin-film, and the preparation method of absorbed layer is called the technology path of CIGS solar cell.At present the main preparation methods of CIGS solar cell has selenizing method behind evaporation, the metal preformed layer.Evaporation requires high to instrument, and the technical difficulty height, is unfavorable for large-scale industrial production.The selenizing method is Cu, In, the Ga metal preformed layer that certain stoichiometric proportion is arranged by sputtering method, evaporation, electro-deposition, print process preparation behind the metal preformed layer, heat treatment in H2Se atmosphere or Se atmosphere then (selenizing processing), the absorbed layer of formation CIGS solar cell.The production line that adopts at present both at home and abroad selenizing legal system behind the metal preformed layer to be equipped with the CIGS solar cell all is the H that adopts
2Se.Reason is H
2Se is a gas, can come adjustments of gas concentration by the mode of control air pressure in producing again, and its Se element activity height that provides, the battery quality height of preparation.But H
2Se is a kind of hypertoxic gas, equipment and operation are required very strictness, and it is inconvenient to store transportation.Solid-state Se source method is that solid-state Se is added thermosetting Se steam, and the tail gas in the production can be realized the recovery of Se by the mode that cooling is condensed, and solid-state Se source safety non-toxic, convenient transportation.Solid-state Se source method requires simple to equipment, be the good new technology of development prospect.
The batch-type sealing selenizing stove that used selenizing stove all is based on glass substrate is handled in existing selenizing, for this kind selenizing stove, adopt HSe gas can be easy to realize the control of the break-make and the gas concentration of gas, can be harmonious with the heat treatment process of battery sheet.Adopt solid-state Se source, the mode of the acquisition Se steam described in the non-patent literature mainly contains two kinds, the one, people such as " Growth of CuInSe2 thin films by high vapour Se treatment of co-sputtered Cu-In alloy in agraphite container; Thin Solid Films 338 (1999) 13-19 " middle F.O.Adurodijaa a certain amount of solid-state Se and sample are together put into heating furnace, the concentration of the wayward Se steam of this method solid-state Se premature evaporation can occur in the heat treatment later stage and fall to cause Se to press not enough problem.Another kind of mode is people such as " selenium steam selenizing legal system is equipped with the factor of influence (I) of CIGS film; solar energy journal 30 (2009) 426-428 " Sino-Korean eastern unicorns the heating of solid-state Se source to be added thermal release with sample substrate, to form Se steam by argon gas in the heating furnace of Se source and be loaded into the high temperature substrates thermal treatment zone and react, the concentration of Se steam is controlled by temperature and the carrier gas flux of regulating Se source heating furnace.In the disposable Se of being added to of the solid-state Se powder source heating furnace that this method will need, utilize the mode of temperature control to regulate and control the evaporation capacity of Se steam, in the selenizing process, can not coordinate with the heat treatment process of substrate.Se source heating furnace in this article be the reservoir vessel of solid-state Se be again heating container, a large amount of Se is in airtight Se source heating furnace, the difficult control of the evaporation capacity of Se under higher temperature is easily because of excessive the appearances danger of pressure.
A kind of method and apparatus for preparing the high activity selenium source is provided among the Chinese patent CN200810053051.This method is to place the heating of vapor tight tank bottom to produce the H of Se steam and feeding in solid-state Se source
2Gas generates H2Se gas or high activity Se steam under the effect of plasma glow discharge.The problem of this method is that a large amount of solid-state Se place heating furnace simultaneously equally, and the evaporation capacity of Se steam is difficult to control, and the excessive easy appearance of pressure is dangerous in the container.In the absorbed layer preparation process, this device can not be in time to H
2Se or Se steam are realized break-make control flexibly and air pressure control.
The utility model content
For the heater that solves existing solid-state Se source and method to the control of Se quantity of steam difficulty and will a large amount of Se once be loaded in the heating furnace and cause crossing the problem that conference produces danger because of pressure, the utility model provides a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for.
The purpose of this utility model is achieved through the following technical solutions, a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, comprise storage compartment, the friction feeding device that is provided with pay-off charging aperture and pay-off discharging opening that is provided with storage compartment's charging aperture and storage compartment's discharging opening, the high-temperature gasification chamber that is provided with vaporizer charging aperture and gas vent, described storage compartment discharging opening links to each other with the pay-off charging aperture, and the pay-off discharging opening links to each other with the vaporizer charging aperture.
The described a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, described storage compartment charging aperture can be opened with airtight.
The described a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for is provided with storage compartment's inert gas air inlet on the top of storage compartment.
The described a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, the feeding style of described friction feeding device is push rod feeding or screw rod feeding, the electric transmission machanism that feeding rod and is used to drive feeding rod is connected.
The described a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, the junction of pay-off and high-temperature gasification chamber is provided with water cooling plant.
The described a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, described high-temperature gasification outside is coated with heating and temperature controlling device.
The described a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for, top, described high-temperature gasification chamber is provided with vaporizer inert gas air inlet.
Technique effect of the present utility model is, 1, the storage of Se source and the heating and gasifying function of solid-state Se source heating furnace are separated, bigger good less heating and gasifying chamber, storage compartment, solid-state Se source, not only can store the required a large amount of solid-state Se source of satisfied production continuously but also can all solid-state Se heating not reduced energy consumption, increase the security of producing.2, the friction feeding device is delivered to vaporizer continuously with solid-state Se and is produced Se steam, is loaded in the selenylation reaction stove by inert gas then, has realized controllability to Se steam by the adjusting to rate of feed, promptly to the control of Se concentration and Se steam break-make.3, the high temperature of vaporizer has guaranteed that the solid-state Se that feeds can very fast gasification, and high temperature improves the activity of Se simultaneously.The utility model is not only applicable to CIGS solar cell vacuum selenizing technology, more is applicable to serialization selenizing production.
The utility model is described in further detail below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the structural representation of the utility model device;
Wherein 1 is solid-state selenium source or sulphur source, 2 is the storage compartment, and 3 is the friction feeding device, and 4 is the feeding channel chamber, 5 is feeding rod, 6 is electric transmission machanism, and 7 is vaporizer, and 8 is heater, 9 is vaporizer inert gas air inlet, 10 is storage compartment's inert gas air inlet, and 11 is water cooling plant, and 12 is gas vent.
The specific embodiment
As shown in Figure 1, solid-state selenium source or sulphur source 1 are added in the storage compartment 2 by opening with airtight storage compartment's charging aperture, solid-state selenium source or sulphur source 1 are powdery or graininess, storage compartment's discharging opening of 2 lower ends, storage compartment links to each other with the pay-off charging aperture in the feeding channel chamber 4 of friction feeding device 3, in the feeding channel chamber 4 is feeding rod 5, feeding style can be push rod feeding or screw rod feeding, preferred screw rod feeding style, and can realize the speed of feeding by the rotating speed of controlling the electric transmission machanism 6 that links to each other with feeding rod 5, realize control then selenium steam.The pay-off discharging opening links to each other with the vaporizer charging aperture of vaporizer 7, and pay-off is with continuous being sent in the vaporizer 7 of the solid-state selenium in the storage compartment, and the heater 8 of controllable temperature is arranged at the vaporizer bottom.Storage compartment's inert gas air inlet 10 is arranged on top, storage compartment, is furnished with water cooling plant 11 in the pay-off outside with the vaporizer connecting place, water cooling plant guarantees that pay-off can be because of the heat transmission heat up, otherwise solid-state sulphur or selenium can melt in the feeding channel chamber and stop up.There is vaporizer inert gas air inlet 9 top of vaporizer.The gas vent 12 of vaporizer communicates with selenizing stove reaction chamber.
The method for preparing selenium steam,
At open continuous selenizing stove
1, inert gas entrance 10 is opened, fed inert gas, make the air emptying that is communicated with in the cavity.
2, gas access 9 is opened, simultaneously water cooling plant 11 is opened.
3, open temperature control heating device 8, make the vaporizer temperature be raised to 800～1000 ℃.
4, start pay-off, solid-state selenium is delivered to vaporizer continuously by the storage compartment.
5, solid-state selenium at high temperature produces selenium steam, is loaded into the selenylation reaction chamber by inert gas by gas outlet 12.
By regulating the control of rate of feed realization to selenium steam supply.
At sealing batch-type selenizing stove
1, the vavuum pump by the selenizing stove vacuumizes, to reach the emptying purpose.
2, the device for cooling 11 of fetching boiling water.
3, open temperature control heating device 8, make vaporizer 7 be raised to 800～1000 ℃.
4, open gas access 10, feed inert gas.
5, start pay-off, solid-state selenium source is sent to vaporizer by the storage compartment.
Send into the amount of the solid-state selenium source of vaporizer by control, regulate the selenium in selenylation reaction chamber and press.
Embodiment 3:
At the continuous vulcanization stove:
1, storage compartment's inert gas entrance 10 is opened, fed inert gas, make the air emptying that is communicated with in the cavity.
2, vaporizer gas access 9 is opened, simultaneously water cooling plant 11 is opened.
3, open temperature control heating device 8, make the vaporizer temperature be raised to 800～1000 ℃.
4, start pay-off, solid-state sulphur is delivered to vaporizer continuously by the storage compartment.
5, solid-state sulphur at high temperature produces sulphur steam, is loaded into the vulcanization reaction chamber by inert gas by gas vent 12.
By regulating the control of rate of feed realization to sulphur steam supply.
Claims (7)
1. one kind is used for the controlled selenium steam of selenizing or vulcanizing treatment or the generation device of sulphur steam, it is characterized in that, comprise storage compartment, the friction feeding device that is provided with pay-off charging aperture and pay-off discharging opening that is provided with storage compartment's charging aperture and storage compartment's discharging opening, the high-temperature gasification chamber that is provided with vaporizer charging aperture and gas vent, described storage compartment discharging opening links to each other with the pay-off charging aperture, and the pay-off discharging opening links to each other with the vaporizer charging aperture.
2. a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for according to claim 1 is characterized in that described storage compartment charging aperture can be opened with airtight.
3. a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for according to claim 1 is characterized in that, is provided with storage compartment's inert gas air inlet on the top of storage compartment.
4. a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for according to claim 1, it is characterized in that, the feeding style of described friction feeding device is push rod feeding or screw rod feeding, and the electric transmission machanism that feeding rod and is used to drive feeding rod is connected.
5. a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for according to claim 1 is characterized in that the junction of pay-off and high-temperature gasification chamber is provided with water cooling plant.
6. a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for according to claim 1 is characterized in that described high-temperature gasification outside is coated with heating and temperature controlling device.
7. a kind of controlled selenium steam of selenizing or vulcanizing treatment or generation device of sulphur steam of being used for according to claim 1 is characterized in that top, described high-temperature gasification chamber is provided with vaporizer inert gas air inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200939115U CN202092090U (en) | 2011-04-01 | 2011-04-01 | Controllable selenium steam or sulfur steam generation device for selenylation or sulfuration processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200939115U CN202092090U (en) | 2011-04-01 | 2011-04-01 | Controllable selenium steam or sulfur steam generation device for selenylation or sulfuration processing |
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| CN202092090U true CN202092090U (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011200939115U Expired - Fee Related CN202092090U (en) | 2011-04-01 | 2011-04-01 | Controllable selenium steam or sulfur steam generation device for selenylation or sulfuration processing |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102252307A (en) * | 2011-04-01 | 2011-11-23 | 湘潭大学 | Controllable selenium steam or sulfur steam generation device and method for selenylation or vulcanization treatment |
| CN103754838A (en) * | 2014-02-08 | 2014-04-30 | 张家港绿能新材料科技有限公司 | Method and equipment for quickly preparing cadmium telluride powder |
-
2011
- 2011-04-01 CN CN2011200939115U patent/CN202092090U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102252307A (en) * | 2011-04-01 | 2011-11-23 | 湘潭大学 | Controllable selenium steam or sulfur steam generation device and method for selenylation or vulcanization treatment |
| CN102252307B (en) * | 2011-04-01 | 2013-08-14 | 湘潭大学 | Controllable selenium steam or sulfur steam generation device and method for selenylation or vulcanization treatment |
| CN103754838A (en) * | 2014-02-08 | 2014-04-30 | 张家港绿能新材料科技有限公司 | Method and equipment for quickly preparing cadmium telluride powder |
| CN103754838B (en) * | 2014-02-08 | 2015-10-28 | 张家港绿能新材料科技有限公司 | A kind of method and apparatus preparing cadmium antimonide powder fast |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111228 Termination date: 20140401 |