CN202056593U - Led lamp - Google Patents
Led lamp Download PDFInfo
- Publication number
- CN202056593U CN202056593U CN2011201137450U CN201120113745U CN202056593U CN 202056593 U CN202056593 U CN 202056593U CN 2011201137450 U CN2011201137450 U CN 2011201137450U CN 201120113745 U CN201120113745 U CN 201120113745U CN 202056593 U CN202056593 U CN 202056593U
- Authority
- CN
- China
- Prior art keywords
- led
- led light
- light
- lampshade
- reflecting plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The embodiment of the utility model provides an LED lamp, which includes a lamp casing, a plurality of LED light sources, a first reflecting plate, and a second reflecting plate. The lamp casing is used for diffuse scattering to LED light irradiated into the lamp casing; the LED light sources are equipped inside the lamp casing and are used for providing LED light into the lamp casing; the first reflecting plate is provided with an opening arranged above the plurality of LED light sources and used for reflecting partial LED light to the outlet direction of the lamp casing; and the second reflecting plate is arranged above the opening of the first reflecting plate, shields a part of the opening of the first reflecting plate, and is used for reflecting partial LED light, which enters through the opening of the first reflecting plate, to a side surface direction of the lamp casing. The embodiment of the utility model can enlarge light distribution angle and improve color temperature.
Description
Technical field
The utility model relates to the LED technical field, relates in particular to a kind of LED lamp.
Background technology
Since 20 end of the centurys, the mankind face severe energy problem, and increasing income and decreasing expenditure is the method that must take.And the energy conservation in artificial light field has great potential, and at present about 22% power consumption (be equivalent to total energy consumption 8%) is used for the not high artificial light of efficient according to statistics, produces about 7% carbon emission.(Light Emitting Diode LED) can provide higher luminous efficiency (380lm/W), and have advantages such as all solid state, pollution-free high-power light emitting diode in theory.Therefore adopting the semiconductor lighting technology of led light source is the effective means of lighting energy saving, and the electro-optical efficiency that wherein improves the basic power LED of gallium nitride (GaN) is the key of performance semiconductor lighting energy-saving effect, also is the focus of international in recent years and domestic research.See on the macroscopic view, the decline of the lifting of LED light efficiency and unit device cost, extra large thatch (Haitz) law with the Moore's Law of being similar to: light efficiency is annual to promote 30%, and price is annual to descend 20%.Current, the semiconductor lighting technology is in fast-developing period, promptly significantly improves with the speed of 10～20lm/W every year on average since the luminous efficiency of LED in 2000.Light efficiency rise to the growth in semiconductor lighting market in recent years and the universal solid foundation of having established of product.
The market leader Cree company of LED lighting field adopts SiC to make blue light and white light emitting diode one of specialized company of epitaxial wafer and chip as backing material at present in the world.Cree company is when constantly improving the extension quality and improving internal quantum efficiency, adopted film (Thin-film) chip technology to promote product brightness significantly, the thin film chip technology promptly utilize substrate transfer technology with the luminescent layer upside-down mounting the conduction good heat dissipation substrate on, the thin film chip technology can solve the heat dissipation problem and the raising of chip effectively and get optical efficiency.The power LED chip product EZ series of Cree company adopts the thin film chip technology to reach leading light efficiency level.Report according to the end of the year 2009 shows that the cold white light LED part research and development of Cree level reaches 186lm/W.Cree develops best white light high-power LED chip in the world today of 208lm/W in February, 2010.This test is to carry out under 350mA electric current and standard testing environment, and correlated colour temperature is 4579K, but it just is issued to this level at breadboard environment.Release breakthrough innovation illumination class LED device products-cold white light in April, 2010
XM LED.This novel single-chip LED can realize impayable high-performance in multiple drive current range.The new record of output of LED illumination light and high light efficiency has been created in its release, provides record-breaking 160lm/W high light efficiency under the drive current of 350mA, and has realized the leading technological break-through of 2 ℃/W of thermal resistance.Under the 350mA drive current, warm white (3000K) XM LED light efficiency is up to 117lm/W, and neutral white (4000K) XM LED light efficiency is up to 138lm/W.This kind of LED has very high lumen density, the luminous flux of 750lm is provided under the 2A electric current, this means that this type of LED of not enough 7W can produce the light output of the incandescent lamp generation that is equivalent to 60W, thereby can simplified design and reduce illumination producer uses (comprising that high canopy lamp, parking lot illumination, road lighting, track lighting, shot-light and LED replace lamp etc.) in directional lighting manufacturing cost, and can help producer easily to control light output and light waste and light pollution are minimized.Section is sharp to be the present manufacturer of unique can scale of mass production the high-performance like this warm white and neutral white LEDs in the whole world.
Nichia is as studying success in the world the earliest and produce blue light and the company of white light emitting diode, maintains the leading position at the aspect of performance of AlInGaN base short wavelength visible light emitting diode (VLED) extension, chip and diode always.Owing on the phosphor material powder of InGaNLED technology and production White LED, have multinomial patent, in the chip supply of InGaN White LED, occupy dominant position always, a day inferior patented technology is controlled at its inner use always.Its technological approaches also is different from traditional LED manufacturer, and mainly is to improve luminous power and external quantum efficiency by being lifted out optical efficiency significantly.In September, 2003, Nichia has reported by the LED epitaxial slice of growing on concavo-convex Sapphire Substrate, and the netted transparent conductive film of utilization Rh Metal Substrate micro-structural, makes chip light-emitting efficiency reach 50%.The Nichia 100lm/W product of having gone into operation that in the industry cycle takes the lead in June, 2006.Operation luminous efficiencies in 2007 reach the White LED of 150lm/W.Nichia company in 2008 announces that its positive assembling structure power LED product light efficiency reaches 145lm/W, and the chip specification is 1mm * 1mm.On the technology path of blue chip, Nichia adopts graphic sapphire substrate epitaxial growing technology in conjunction with ITO transparency conducting layer chip technology, and the properties of product performance is superior, particularly small-power chip even reach the performance indications of 245lm/W.
Germany's Ou Silang (Osram) optoelectronic semiconductor company early stage product be with SiC as backing material, ATON and NOTA series of products have released one after another.The product of Osram and R﹠D direction also are based on the thin film chip technology, the ThinGaN TOPLED of its research and development adopts sapphire as backing material, technological approaches such as utilization bonding, laser lift-off, surface micro-structureization and use completely reflecting mirror, chip light-emitting efficiency reaches 136lm/W.March 15 in 2011, the Ri Ousilang optoelectronic semiconductor was successfully brought up to 142lm/W with the luminous efficiency of warm white LED light source, and colour vision is also very approaching with conventional incandescent, has created new laboratory record.Under the correlated colour temperature (CCT) of 2755K, the colour rendering index of LED (CRI) is up to 81.These numerical value all record under standard conditions: under the room temperature, adopt pulse mode, working current density is 350mA/mm
2The lab scenario of warm white LED is issued to peak value 142lm/W at colour temperature 2700K, and peak point just in time drops on the Planckian locus, and the peak value light efficiency of the prioritization scheme of colour temperature 3000K is expected to reach 160lm/W especially.If this technology is applied to 2mm
2On the chip, under the identical condition of operating current, light efficiency can improve 10% to 15% again, that is to say, the efficient of pure warm white LED is expected to reach 180lm/W, realizes good colour rendering simultaneously.
At present the light efficiency level of large power white light LED industrialization is about 120～130lm/W substantially in the world, and domestic level approximately also just between 90～100lm/W, realize that the light efficiency more than 200 lumens also needs to do a lot of effort.Certainly, the LED light efficiency promotes very crucial, significant.Because light efficiency and price are two topmost indexs that decision LED produce market is used, the raising of LED light efficiency helps the raising of LED device cost performance, accelerates the paces that LED moves towards various lighting fields.The cost performance of LED has made it obtain extensive use in fields such as Landscape Lighting, demonstrations at present, and incites somebody to action progressively dominate; But in the general illumination field, the large-scale startup in market also depends on the further raising of product light efficiency and the further decline of price.If the LED light transmittance efficiency rises to 200lm/W from 75lm/W, luminous cost is expected to drop to 2 dollars/kilolumen from 20 dollars/kilolumen.At that time, LED will be expected to replace incandescent lamp and most fluorescent lamp, make the LED illumination really move towards huge numbers of families, reach energy-conservation and target environmental protection.Aspect U.S.'s room lighting, second half 2010, the demand of U.S.'s outdoor lighting descended, U.S. outdoor lighting market in 2011 performance of will promptly rising again in the first half of the year, the phenomenon that the second half year, then good indoor LED lamp was replaced traditional lighting will progressively be appeared in one's mind, expect that whole order situation can heat successively.The integral LED illumination market is still based on outdoor lighting at present, and room lighting is estimated to begin to manifest tangible business opportunity 2011.
Warm white LED is applied to room lighting and possesses numerous advantages.The first, the brightness of LED and photochromic adjustable can be satisfied the requirement of interior decoration illumination to color, on exploitation sight illumination market, possesses the advantage that conventional light source hardly matches.The second, LED dynamically controls easily, can need the occasion of program capability at some according to the default cluster control of user's demand, and rational solution can be provided, for the intelligent management of room lighting provides convenient.The 3rd, the LED volume is small and exquisite, has more decorative features, can organically blend with building by light fixture is default, reaches the effect of " seeing that light loses lamp ".The 4th, the LED life-span is long, not mercurous, meets the policy requirements of country's " power saving reduction of discharging ".The 5th, LED definitely is being the radiation of beam angle interior orientation, when being used for light fixture such as shot-light, Down lamp, helping improving and penetrates down that light is logical to be compared.
Along with the decline of the manifesting of the lifting of LED technology, power saving effect, cost,,, shown good growth momentum even LED has begun to enter commercial lighting department home lighting market no matter in the international market or the domestic market.Still very expensive in the extensive present stage LED of domestic light application prospect price, but because the LED light fixture is equipped with higher light efficiency, but throttling power loss cost, the long life-span is arranged simultaneously, can reduce replacing and safeguard expenditure, therefore, when considering white light LEDs room lighting developing direction, with respect to the traditional lighting mode, the investment repayment of white LED lamp is most important considerations.
By analysis as can be known, with respect to incandescent lamp, the investment payback time of LED lamp is 1.7 years to 3.4 years; With respect to Halogen lamp LED, the investment payback time of LED lamp is 1.7 years to 3.5 years.Therefore, replace incandescent lamp and Halogen lamp LED, the application of white light LEDs possesses very attracting investment recovery rate.With respect to compact fluorescent lamp, in the department application scenario, the investment payback time of LED lamp is 4.5 years to 6.2 years; Compare straight tube fluorescent lamp and metal halide lamp, the LED lamp does not have good investment payback time performance.Key technology needs to break through, and does not use share though white light LEDs does not stop to enlarge at the room lighting category, and White-light LED illumination also faces many challenges.The LED lamp not only needs to deposit the correlated performance of family dependant's chip or package parts, more needs primary study LED illumination to form electronic technology, heat management and the optical technology etc. of a cover.
Because the LED direction of light is strong, light is difficult to back side diffusion, and general luminous intensity distribution angle has only about 120 °.Usually colour temperature and illumination are directly proportional promptly high illumination, high colour temperature.Therefore,, need further to increase the luminous intensity distribution angle, reduce high illumination with directionality in order to satisfy all kinds of demands of room lighting.
The utility model content
The utility model embodiment provides a kind of LED lamp, to increase the luminous intensity distribution angle, improves colour temperature.
In order to solve the problems of the technologies described above, the utility model embodiment provides a kind of LED lamp, and described LED lamp comprises:
One lampshade is used for the LED light that shines this lampshade inside is carried out the diffusion type scattering;
A plurality of led light sources are configured in the described lampshade, are used to provide LED light in described lampshade;
One first reflecting plate has opening, and is positioned at described a plurality of led light sources top, is used for the Way out of reflecting part LED light to described lampshade;
One second reflecting plate is positioned at the opening top of described first reflecting plate, and shelters from the opening of described first reflecting plate of part, is used for LED light that the reflecting part enters through the opening of described first reflecting plate side surface direction to described lampshade.
Optionally, in an embodiment of the present utility model, described led light source has gallium nitride GaN base White-light LED chip.
Optionally, in an embodiment of the present utility model, described lampshade is the hemispherical lampshade.
Optionally, in an embodiment of the present utility model, described lampshade is the resin lampshade.
Optionally, in an embodiment of the present utility model, described a plurality of led light sources are circular configuration in described lampshade.
Technique scheme has following beneficial effect: because adopt a plurality of compact LED light sources of configuration in lampshade, and be provided with the reflecting plate and the two-layer reflecting plate of astomous reflecting plate of opening above it, light through the ground floor baffle reflection to the lamp holder direction, through second layer baffle reflection to side surface direction, the diffusion type scattering takes place in craspedodrome light on lampshade, obtain big luminous intensity distribution angle thus, improved colour temperature.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a kind of LED modulated structure of the utility model embodiment schematic diagram;
Fig. 2 is circular configuration schematic diagram for a plurality of led light sources of the utility model embodiment in described lampshade;
Fig. 3 is the luminous intensity distribution angle spread schematic diagram of a kind of LED lamp of the utility model embodiment.
The specific embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1, be a kind of LED modulated structure of the utility model embodiment schematic diagram, described LED lamp comprises:
One lampshade 11 is used for the LED light that shines this lampshade inside is carried out the diffusion type scattering;
A plurality of led light sources 12 are configured in the described lampshade 11, are used to provide LED light in described lampshade;
One first reflecting plate 13 has opening 131, and is positioned at described a plurality of led light source 12 tops, is used for the Way out of reflecting part LED light to described lampshade 11;
One second reflecting plate 14, be positioned at opening 131 tops of described first reflecting plate 13, and shelter from the opening 131 of described first reflecting plate 13 of part, be used for LED light that the reflecting part enters through the opening 131 of described first reflecting plate 13 side surface direction to described lampshade 11.
Optionally, described lampshade is the hemispherical lampshade, need to prove that the shape of lampshade can also help the shape of LDE light diffusion type scattering for half elliptic etc., and the utility model embodiment is not as limit.Optionally, described lampshade is the resin lampshade, is beneficial to LED light and carries out the diffusion type scattering.
The utility model embodiment is because adopt a plurality of compact LED light sources of configuration in lampshade, and be provided with the reflecting plate and the two-layer reflecting plate of astomous reflecting plate of opening above it, light through the ground floor baffle reflection to the lamp holder direction, through second layer baffle reflection to side surface direction, the diffusion type scattering takes place in craspedodrome light on lampshade, obtain big luminous intensity distribution angle thus, improved colour temperature.
Preferably, above-mentioned a plurality of led light sources can be circular configuration in described lampshade, be beneficial to LED light and disperse evenly.As shown in Figure 2, for a plurality of led light sources of the utility model embodiment are circular configuration schematic diagram in described lampshade, wherein 11 is lampshade, and 12 is led light source.As shown in Figure 3, be the luminous intensity distribution angle spread schematic diagram of a kind of LED lamp of the utility model embodiment, at strong owing to the LED direction of light in the prior art, light is difficult to back side diffusion, and general luminous intensity distribution angle has only about 120 °.Usually colour temperature and illumination are directly proportional promptly high illumination, high colour temperature.Therefore,, need further to increase the luminous intensity distribution angle, reduce high illumination with directionality in order to satisfy all kinds of demands of room lighting.Bright warm white is efficiently used particularly important to residential lighting, in order to increase the luminous intensity distribution angle, improve colour temperature (about 3000K), in the hemispherical lampshade, can be a plurality of compact LED light sources of circular configuration, and be provided with the reflecting plate and the two-layer reflecting plate of astomous reflecting plate of opening above it.As shown in Figure 3, to the lamp holder direction, to side surface direction, craspedodrome light spreads on the resin lampshade light through second layer baffle reflection through the ground floor baffle reflection, obtains big luminous intensity distribution angle thus, can surpass 300 degree.
Preferably, above-mentioned led light source can be for having gallium nitride GaN base White-light LED chip etc.
White light LEDs (1W) leading indicator:
Light extraction efficiency: 〉=130lm/W350mA;
Colour temperature: 2700-5000K;
Colour rendering index:＞80;
Thermal resistance:＜8 ℃/W;
Operating voltage:＜3.5V;
Service life:＞2 ten thousand hours, light output saturation current＞=700mA carried out the accelerated ageing experiment, 100 hours degradation ratio＜10% under 700mA.
China's semiconductor lighting begins to enter the cycle of a fast development, estimates in the following 3-5, and bigger change will take place for China's semiconductor lighting industry size and industrial pattern, also will strengthen greatly with influencing in the status of international semiconductor Lighting Industry system.China LED industry has formed basic integrated industrial chain, and the Delta of the Pearl River, Yangtze River Delta, northern area, Jiangxi and four big zones, area, Fujian have been begun to take shape, each zone has all begun to take shape relatively integrated industrial chain, and the LED enterprise more than 85% is distributed in these areas.The semiconductor lighting engineering industry base of the first batch of approval of country's semiconductor lighting engineering is Shanghai, Xiamen, Dalian and Nanchang, has reflected this industrial pattern substantially.
2010, under and the background that the various places policy support puts more effort tight slightly in the chip market supply of material, China extension chip enterprise production capacity expanded rapidly, and MOCVD equipment order quantity accounts for 1/3 of global equipment order.According to statistics, China surpassed 270 to the GaN MOCVD that factory installs in 2010, about 30 of quaternary system MOCVD, and MOCVD equipment sum reaches 300.The whole nation more than 40 tame extension chip enterprises buy at the equipment in following 3 years and plan above 1000.
2010, China's chip output value reached 5,000,000,000 yuan, than 2,300,000,000 realization multiplications in 2009.Homemade GaN chip production capacity in 2010 increase is the most outstanding, increases by 150% than 2009, reaches the 5600kk/ month, and actual annual production reaches 39,000,000,000, and state's productive rate has also risen to 65%.The performance of homemade chip is highly improved, and has occupied dominant position in market segments such as display screen, Landscape Lighting, signal lamps, in illumination, small-medium size is backlight etc., and application also progressively obtains approval.
2010, China LED encapsulation output value reached 25,000,000,000 yuan, than 20,400,000,000 yuan of growths by 23% in 2008; Output then is increased to 1,335 hundred million by 1,056 hundred million in 2009, and the wherein highlighted LED output value reaches 23,000,000,000 yuan, accounts for more than 90% of LED total sales volume.From the product and the pattern of enterprises, SMD and high-power LED encapsulation increase comparatively obvious, become the direction of mainly expanding production of LED encapsulation, but with regard to total amount, it is still on the low side that the SMD proportion is compared the Taiwan.
2010, the growth that China's semiconductor lighting is used was very outstanding, and the overall size of application reaches 90,000,000,000 yuan, and overall growth rate reaches 50%; Wherein, the growth of application backlight and general illumination application is the most outstanding.Represent powerful explosive force based on LED in large scale field of backlights such as LCD TVs, the rapid growth of LED-backlit industry, the annual growth of China's LED-backlit output value in 2010 reaches 167%, its market penetration rate is constantly soaring, LED-backlit LCD TV permeability from 2009 2.3% rise to 8.9%.Along with Chinese Development of China's Urbanization continue carry out and the active demand of energy-saving and emission-reduction, the market scale of LED illuminating product enlarges rapidly, 2010 annual growths reach 153%; Efficient illuminating product such as LED progressively poor efficiency illuminating product such as replace incandescent has become trend of the times, and general illumination will be the application of following tool potentiality, is expected to into LED illumination development first year in 2011.In addition, LED also continues the growth rate that kept higher in application facet such as display screen, Landscape Lighting, signal, indications.
The market in short-term and mid-term is mainly promoted by the back lighting of TV, and the medium and long term market growth also will rely on illumination to use.The five-year, LED will increase fast in the general illumination field, and this wherein mainly has benefited from the application of alternative lamp.Present many people are to the Life cycle of the LED light fixture energy-conservation suspection that proposed whether.By the Life cycle of contrast incandescent lamp, compact fluorescent lamp (CFL) and LED lamp, LED light fixture efficiency is the highest, and CFL is poor slightly, but the incandescent lamp energy consumption is too high, so national governments have put into effect the policy of a series of superseded incandescent lamps successively.
Color temperature has surpassed 100lm/W up to the product of 5000～9000K, and the bulb look product that is subjected to the lighting use welcome is about 80～85lm/W.In addition, on average drilling colour index (Ra) is that 90 height is drilled the look product about 70lm/W.Though the luminous efficiency of White LED has reached the level that surpasses 100lm/W, is subjected to condition effect such as color temperature, color rendering and input current, does not many times reach 100lm/W in addition.From the research and development level, reached 50% based on the energy conversion efficiency of the blue led chip of the White LED ratio of light energy output (input power with).Use the words of this chip to be expected to realize significantly surpassing the White LED of 100lm/W.But energy conversion efficiency can not surpass 100%.Because there is physics limit.Just as there is the limit in semiconductor memory in the raising of integrated level, the luminous efficiency of energy conversion efficiency and White LED also can not improve down from now on always.Comparatively reasonably view is that the product luminous efficiency can rest between 150～200lm/W.
The above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is the specific embodiment of the present utility model; and be not used in and limit protection domain of the present utility model; all within spirit of the present utility model and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.
Claims (5)
1. a LED lamp is characterized in that, described LED lamp comprises:
One lampshade is used for the LED light that shines this lampshade inside is carried out the diffusion type scattering;
A plurality of led light sources are configured in the described lampshade, are used to provide LED light in described lampshade;
One first reflecting plate has opening, and is positioned at described a plurality of led light sources top, is used for the Way out of reflecting part LED light to described lampshade;
One second reflecting plate is positioned at the opening top of described first reflecting plate, and shelters from the opening of described first reflecting plate of part, is used for LED light that the reflecting part enters through the opening of described first reflecting plate side surface direction to described lampshade.
2. LED lamp according to claim 1 is characterized in that,
Described led light source has gallium nitride GaN base White-light LED chip.
3. LED lamp according to claim 1 is characterized in that,
Described lampshade is the hemispherical lampshade.
4. LED lamp according to claim 1 is characterized in that,
Described lampshade is the resin lampshade.
5. LED lamp according to claim 1 is characterized in that,
Described a plurality of led light source is circular configuration in described lampshade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201137450U CN202056593U (en) | 2011-04-18 | 2011-04-18 | Led lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201137450U CN202056593U (en) | 2011-04-18 | 2011-04-18 | Led lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202056593U true CN202056593U (en) | 2011-11-30 |
Family
ID=45016564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201137450U Expired - Fee Related CN202056593U (en) | 2011-04-18 | 2011-04-18 | Led lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202056593U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102563428A (en) * | 2012-01-18 | 2012-07-11 | 深圳和而泰照明科技有限公司 | Light emitting diode (LED) full light angle bulb |
| CN102748593A (en) * | 2011-04-18 | 2012-10-24 | 北京地调科技发展有限公司 | LED (Light Emitting Diode) lamp |
| TWI498507B (en) * | 2012-08-08 | 2015-09-01 | Wintek Corp | Bulb lamp structure |
| CN107191809A (en) * | 2017-06-21 | 2017-09-22 | 合肥木凡节能环保科技有限公司 | A kind of more excellent LED of colour temperature |
-
2011
- 2011-04-18 CN CN2011201137450U patent/CN202056593U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102748593A (en) * | 2011-04-18 | 2012-10-24 | 北京地调科技发展有限公司 | LED (Light Emitting Diode) lamp |
| CN102563428A (en) * | 2012-01-18 | 2012-07-11 | 深圳和而泰照明科技有限公司 | Light emitting diode (LED) full light angle bulb |
| CN102563428B (en) * | 2012-01-18 | 2014-11-05 | 深圳和而泰照明科技有限公司 | Light emitting diode (LED) full light angle bulb |
| TWI498507B (en) * | 2012-08-08 | 2015-09-01 | Wintek Corp | Bulb lamp structure |
| CN107191809A (en) * | 2017-06-21 | 2017-09-22 | 合肥木凡节能环保科技有限公司 | A kind of more excellent LED of colour temperature |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204704727U (en) | The LED street lamp that a kind of radiating efficiency is high | |
| CN202056593U (en) | Led lamp | |
| CN201050735Y (en) | Lens | |
| CN101858492A (en) | LED illumination device and application thereof in lamp | |
| CN202048418U (en) | Light-emitting diode (LED) fluorescent tube | |
| CN201100556Y (en) | A LED road lamp for mixing white light with red, green and blue LED | |
| CN102410504B (en) | Large-heat-radiation-surface LED lighting device and manufacture method thereof | |
| CN2849445Y (en) | LED lighting lamp with heat radiation function | |
| CN200986136Y (en) | Energy conservation lighting lamp structure | |
| CN102748593B (en) | LED (Light Emitting Diode) lamp | |
| CN201892097U (en) | White-light lamp comprising LED (light-emitting diode) light source | |
| CN202791526U (en) | Light guide post-type lighting lamp | |
| CN204704789U (en) | A kind of heat dissipation LED road lamp | |
| CN203517709U (en) | LED cooling fin and LED streetlamp | |
| CN201110480Y (en) | Energy-saving high-efficiency high-power multifunctional LED street lamp | |
| CN101975349A (en) | LED annular lighting tube with adjustable brightness | |
| CN2791152Y (en) | Luminous floor tile | |
| CN203836678U (en) | High-condensation LED lamp for plant growing | |
| CN202091875U (en) | LED (light-emitting diode) lighting lamp utilizing organic glass for guiding light | |
| CN202598245U (en) | High-power semiconductor light source module | |
| CN205640303U (en) | Novel energy -conserving LED light | |
| CN204879676U (en) | Intelligent control LED plant lamp | |
| CN201297548Y (en) | An LED courtyard ornamental light | |
| CN203784661U (en) | LED meat counter color mixing lamp tube | |
| CN203442545U (en) | AC LED lighting module with changeable light emitting angles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111130 Termination date: 20140418 |