CN202030697U - 光增强光致发光片材和光增强发光二极管 - Google Patents
光增强光致发光片材和光增强发光二极管 Download PDFInfo
- Publication number
- CN202030697U CN202030697U CN2011200307929U CN201120030792U CN202030697U CN 202030697 U CN202030697 U CN 202030697U CN 2011200307929 U CN2011200307929 U CN 2011200307929U CN 201120030792 U CN201120030792 U CN 201120030792U CN 202030697 U CN202030697 U CN 202030697U
- Authority
- CN
- China
- Prior art keywords
- strengthens
- sheet material
- photoluminescence
- light
- light according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005424 photoluminescence Methods 0.000 title claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000000843 powder Substances 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000002708 enhancing effect Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 150000003016 phosphoric acids Chemical class 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 27
- 238000005566 electron beam evaporation Methods 0.000 description 16
- 239000012528 membrane Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 12
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 12
- 238000000151 deposition Methods 0.000 description 8
- 230000003014 reinforcing effect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 239000013528 metallic particle Substances 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000007669 thermal treatment Methods 0.000 description 5
- 241000218202 Coptis Species 0.000 description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000002223 garnet Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002866 fluorescence resonance energy transfer Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010023126 Jaundice Diseases 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 TAG) Chemical compound 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005576 amination reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000010415 colloidal nanoparticle Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Luminescent Compositions (AREA)
Abstract
本实用新型涉及一种光增强光致发光材料及其应用。光增强光致发光材料,该发光材料包括光致发光材料和能产生表面等离子体光增强效应的金属层,金属层设置在光致发光材料的表面。本实用新型可以显著提高光致发光材料的发光效率。采用上述光增强光致发光材料的LED器件、泡灯、管灯和平面灯,与采用普通粉末荧光体光致发光材料的相比,具有光效高,亮度高,发光均匀,使用寿命长,制造工艺简单,成本低等特点。对于具有中空结构,即LED芯片与光增强光致发光材料分开安装的LED灯,还可设计成能方便拆卸和维修,还能从更换报废的光增强光致发光材料中回收稀有金属材料。
Description
技术领域
本实用新型涉及光增强光致发光片材和光增强发光二极管。
背景技术
近年来发光二极管(LED)照明发展很快,其发发光效率已远远超过白炽灯,但是,目前照明用LED 以光通量流明为单位计的制造成本还远高于荧光灯;而且,从节能的角度考虑,发光效率越高越好。因此为了大规模推广使用LED照明,必须继续努力提高LED的发光亮度和发光效率,降低每流明光通量的LED制造成本。
作为照明应用,主要是白光照明产品,目前主流的白光LED照明产品是用LED发射的蓝光中的一部分激发黄色光荧光材料产生的黄光与另一部分蓝光混合而获得的。因此白光LED主要由两部分组成:其一是利用半导体PN结的电致发光LED芯片,目前多用发蓝光的GaN系LED芯片,也在研究采用的紫外光InGaN系LED芯片;另一部分是光致发光材料,目前多用发黄光的粉末状钇铝石榴石(YAG)荧光体。从提高照明性能的角度考虑,开发高效电致发光LED芯片与开发高效光致发光材料具有同样重要的意义。
为了提高光致发光材料的性能我们提出了将其制成晶片,并申请了专利(申请号:201010616828.1,申请日:2010-12-31),该专利申请公开了光致发光晶片,所述的光致发光晶片为具有通式为A3B5O12的石榴石结构不掺加任何树脂和其它粘结剂的片状晶体,光致发光晶片的厚度≥20μm,晶粒的尺寸≥10μm;并且,所述的光致发光晶片的元素成分中包括:第一元素A为稀土元素Y、Lu、La、Gd或Sm中的至少一种;第二元素B为元素Al、Ga或In中的至少一种;激活元素为稀土元素Ce,Pr,Tb或Dy中至少一种。该发明所述的光致发光晶片具有以下特点:发光效率高,发光均匀性好;不会由于粘结剂的光吸收而减小发光层的透光性;光致发光晶片表面容易实施各种光学处理。
与此同时,近年来,对表面等离子体激元(SPPs)的研究进展很快。SPPs是光和金属表面的自由电子相互作用所引起的一种电磁波模式,或者说是在局域金属表面的一种自由电子和光子相互作用形成的混合激发态。在这种相互作用中,自由电子在与其共振频率相同的光波照射下发生集体振荡。它局限于金属与介质界面附近,沿表面传播,并能在特定微纳结构条件下形成光场增强。目前, SPPs已经被成功地应用于制造高性能传感器和光电子器件,促进了生物、化学等多个领域的发展。
现在,将SPPs应用于提高半导体PN结的电致发光芯片已进行了较多研究,而且取得了显著的进展。如中国发明专利(申请号:200410080671.X 申请日:2004-09-29)公开了半导体发光元件,该半导体发光元件具有形成于发光层上的半导体层、形成于半导体层上的第1电极层、形成于第1电极层上的具有周期性结构的第2电极层。第1电极层与半导体层的电阻接触优于第2电极层,第2电极层含有等离子体频率高于第1电极层的金属。不仅能达成良好的电阻接触,还能达成表面等离子体激元效应的半导体发光元件。
中国发明专利(申请号:200880126069.1 申请日:2008-01-30)公开了等离子体激元增强的发光二极管,发光二极管包括夹在第一本征半导体层和第二半导体层之间的至少一个量子阱。n型异质结构设置在第一本征半导体层的表面上,且p型异质结构设置在第二本征半导体层的与n型半导体异质结构相对的表面上。二极管还包含设置在发光二极管的表面上的金属结构。沿着金属结构和发光二极管表面之间的界面形成的表面等离子体激元偏振扩展到该至少一个量子阱,这增加了从该至少一个量子阱发射的电磁辐射的横向磁场分量的自发发射率。在某些实施方式中,可以以约10Gb/s或更快的速率调制该电磁辐射。
但是,现在将SPPs应用于LED光致发光材料的研究却非常之少;实际上,如上所述,为了改进LED照明产品的性能,将SPPs应用于提高LED荧光材料的亮度和发光效率与应用于LED芯片相比具有同等重要的意义。
基于上述情况,我们提出将SPPs的光场增强效应应用于白光LED照明器件中发光晶片,在成本有效的前提下,获得具有高亮度高发光效率的LED器件与LED灯,并期望能显著降低LED每流明光通量的制造成本。
发明内容
为了提高荧光材料的亮度和发光效率,本实用新型的第一个目的是提供一种光增强光致发光材料,该光增强光致发光材料显著提高了荧光材料的亮度和发光效率。本实用新型的第二个目的是提供采用上述光增强光致发光材料的半导体发光二极管。
为了实现上述的第一个目的,本实用新型采用了以下的技术方案:
光增强光致发光材料,该发光材料包括光致发光材料和能产生表面等离子体光增强效应的金属层,金属层设置在光致发光材料的表面。
作为优选,所述的金属层的厚度为20~350nm;作为优选,所述的金属层的形貌为金属阵列膜、金属岛状薄膜、金属渝渗岛状薄膜或者表面粗糙的金属薄膜。
作为优选,所述的金属层为纳米颗粒层。
作为优选,所述的金属层选用金、铜、铂和铝中的一种或多种的合金;作为再优选,所述的金属层选用银或金。
作为优选,所述的光致发光材料与金属层之间设有透明介质隔离膜;作为再优选,所述的透明介质隔离膜选自SiNx或SiO2;作为再优选,所述的透明介质隔离膜的厚度为5-20nm。透明介质隔离膜是为了消除因金属膜与光致发光荧光材料的直接接触而导致的由非辐射能量传递产生的荧光碎灭效应。
作为优选,所述的金属层的外侧设有透明保护膜;作为再优选,所述的透明保护膜选自SiO2、Zn0或SiNx-;作为再优选,所述的透明保护膜的厚度为10~30nm。保护膜用于保护纳米金属颗粒不被氧化和损伤。
作为优选,所述的光致发光材料为片状材料,片状材料的正面、背面或两面同时具有凹凸织构的粗糙表面。
作为优选,所述的光致发光材料为单晶光致发光片、多晶光致发光片或用粘合剂粘结的荧光粉材料,所述的单晶光致发光片和多晶光致发光片为不掺加任何树脂和其它粘结剂的片状晶体;作为再优选,所述的单晶光致发光片或多晶光致发光片的厚度≥20μm,晶粒的尺寸≥10μm。
作为优选,所述的光致发光材料选自铝酸盐(如钇铝石榴石YAG、TAG)、硅酸盐、磷酸盐、钼酸盐、钒酸盐、钨酸盐、氮化物、氧化物和硫化物中的一种或多种组合。
作为优选,所述的单晶光致发光片的厚度为30~200μm,多晶光致发光片的厚度为50~200μm。
为了实现上述的第二个目的,本实用新型采用了以下的技术方案:
光增强发光二极管,该发光二极管包括LED芯片, LED芯片发光面的一侧设有上述任一一个技术方案所述的光增强光致发光材料。
作为优选,所述的光致发光材料为片状材料,选自单晶光致发光片、多晶光致发光片或用粘合剂粘结的荧光粉光致发光片中的一种,光增强光致发光材料通过镶嵌或粘贴的方式设置在LED芯片的发光面的上方;作为优选,光增强光致发光材料与LED芯片之间设有间隙。
作为优选,光致发光材料为涂布于LED芯片上的用粘合剂粘结的荧光粉材料,荧光粉材料表面设有透明介质隔离膜,所述的金属层设置在透明介质隔离膜的表面,金属层的表面设有透明保护膜。
要提升光致发光荧光材料发光效率,必须首先提高其量子转换效率。分析表明:当金属层与晶态荧光材料适当耦合,除了由SP能量传递产生共振吸收外,还能通过SP激发态到荧光体激发态之间的电荷传递增加处于晶态荧光颗粒激发态上的电荷数,从而提高内量子效率;同时,还能改变晶态荧光材料的吸收与发射的自发跃迁模式,造成激发态粒子数和辐射跃迁速率倍增现象,提高金属层和荧光材料复合体系的外量子效率,进而显著增强荧光材料的发光效率。
研究表明:由发光体所发的光可以直接激发金属层的表面等离子体,引起近场增强。金属层的表面等离子体荧光增强通常是通过表面等离子体激元共振改变局域电磁场分布来实现的。因此表面等离子体的荧光增强效应与金属层的成分、形貌、尺寸以及周围的介电环境有着密切的关系。金属层的形貌可以是由电子束刻蚀的金属阵列膜,由电子束蒸发或者磁控溅射等制备的金属岛状薄膜,由金属胶体金属颗粒的自组装得到的表面粗糙的薄膜。不同形貌的薄膜都是利用其金属层的局域表面等离子体的激发以及他们的相互作用,获得近场增强特性。当金属层是具有粗糙表面的连续薄膜时,表面等离子体波会在纳米级的凹凸处产生衍射效应而被散射,引起近场增强。由电子束刻蚀得到的金属阵列的表面等离子体共振荧光增强倍数高、重复性好,但工艺复杂、制备成本高。由电子束蒸发或磁控溅射得到的金属岛状薄膜或由金属胶体颗粒通过静电组装方式形成的金属层的荧光增强效应也很明显。调节金属薄膜生长过程的各种参数可实现调控金属颗粒的形状和大小,如通过成膜速率,退火温度、退火时间以及退火的环境气氛等可调控薄膜金属层的形貌和粒径的大小,以获得尽可能高荧光增强效果。
在金属层的表面等离子体与发光体相互作用的过程中,同时存在着荧光湮灭和荧光增强两个作用相反的因素。 因此,除了金属层的形貌之外,金属层和发光体之间的间隔距离对表面等离子体激元的荧光增强也起着重要作用。在金属层与发光体之间可设置一层隔离层阻止荧光共振能量转移,减弱或消除荧光湮灭。与在发光体上直接沉积金属层相比,其间设置一层具有合适厚度的隔离层,可显著增大荧光强度的增强倍数。
本实用新型由于采用了上述的技术方案,可以显著提高光致发光材料的发光效率。当本实用新型与申请号为201010616828.1所述的片状发光晶片相结合时,其光致发光材料的亮度和发光效率的提高更为显著。这不仅是由于申请号为201010616828.1所述的片状光致发光晶片,晶体的晶格完整,表面损伤小,表面复合低,发光效率高;而且由于片状光致发光片表面容易实施各种光学处理,除了便于在晶片正面和背面制作成凹凸织构的陷光表面、蒸镀抗反射层和对晶片进行表面粗化处理增加光出射外,尤其适合于在其表面上制备透明介质隔离膜、各种形貌和颗粒大小的金属层和透明保护膜。
采用本实用新型光增强光致发光材料的LED器件、泡灯、管灯和平面灯,与采用普通粉末荧光体光致发光材料的相比,具有光效高,亮度高,发光均匀,使用寿命长,制造工艺简单,成本低等特点。对于具有中空结构,即LED芯片与光增强光致发光材料分开安装的LED灯,还可设计成能方便拆卸和维修,还能从更换报废的光增强光致发光材料中回收稀有金属材料。
附图说明
图1为本实用新型的实施例1的结构示意图。
图2为本实用新型的实施例2~5的结构示意图。
图3为本实用新型的实施例6的结构示意图。
图4为本实用新型的实施例7的结构示意图。
图5为本实用新型的实施例8的结构示意图。
图6为本实用新型的实施例9的结构示意图。
图7为本实用新型的实施例10的结构示意图。
图8为本实用新型的实施例11的结构示意图。
图9为本实用新型的实施例12的结构示意图。
图10为本实用新型的实施例13的结构示意图。
具体实施方式
下面结合附图对本实用新型的具体实施方式做一个详细的说明。
实施例1
如图1所示,钇铝石榴石单晶光致发光片1的一个表面上,在真空度为1.0×10-3Pa的真空室内,发光片温度50℃,用电阻加热蒸发方法沉积一层厚度为60nm的Ag膜,蒸发源为纯度为99.98%的银丝;然后在20%氢气加80%氮气的高纯混合气氛中,200℃温度下热处理20min,形成具有龟裂状分散颗粒的Ag膜2;其上再用电子束蒸发方法沉积一层厚10nm的SiO2保护膜3。电子束蒸发工艺为:真空室的真空度1.0×10-3Pa,发光片温度100℃,蒸发源为纯度为99.98%的块状SiO2,电子束加热时SiO2置于内衬石墨层的紫铜坩埚内。蒸镀SiO2保护膜3后即制得能获得表面等离子体激元增强效应的光致发光晶片。它与同样方法制备的不含表面等离子体激元金属层的钇铝石榴石单晶光致发光片相比,其荧光增强1.2~1.3倍。
实施例2
如图2所示,在钇铝石榴石多晶光致发光片1的一个表面上,采用等离子体增强化学气相沉积(PECVD)方法,沉积厚10nm的SiNx隔离膜4,沉积的工艺条件为:反应室预真空<2.0×10-3Pa,以硅烷(SiH4)与氨(NH3)作等离子体气源,沉积时气压60~80 Pa,衬底温度250℃, 射频电源频率13.56MHz, 输出功率0.20W/cm2。然后在高纯氩气氛中用S抢磁控溅射方法沉积一层厚为50nm的Ag膜,再在高纯氮气氛中,300℃温度下热处理15min,形成岛状的纳米颗粒层2,然后再在真空度<1.0×10-3Pa的真空室中用电子束蒸发方法沉积一层厚20nm的SiO2保护膜3,形成表面等离子体激元增强的光致发光晶片。它与同样方法制备的不含表面等离子体激元金属层的发光晶片相比,可获得1.5~1.8倍的发光增强效应。
实施例3
如图2所示,在钇铝石榴石多晶光致发光片1的一个表面上用电子束蒸发沉积12nm 厚的SiO2隔离膜4,然后用化学液相法金属胶体颗粒自组装制作获得80~120nm的Ag膜,其工艺为:先在质量含量为0.01% 的AgNO3的水溶液中加入2%体积的质量含量为1%的柠檬酸三纳水溶液,然后微波加热到沸腾,沸腾3~4min分钟,制取银胶体纳米颗粒溶液。再将多晶光致发光片浸泡在3-氨基丙基三甲氧基硅烷的甲醇溶液中,使发光片表面氨基化,然后将其浸泡在上述银胶体纳米颗粒溶液中,实现银胶体纳米颗粒在发光片上的自组装。最后将这种由柠檬酸三纳还原法制备银胶体纳米颗粒在氮气氛中退火处理,在230℃温度下热处理10min制备出具有蠕虫形岛状的Ag纳米颗粒层2;其上再用PECVD方法制备一层厚度为10nm的 SiNx保护膜3,形成能产生表面等离子体激元增强效应的光致发光晶片,其荧光增强为1.2~1.5倍。
实施例4
如图2所示,将钇铝石榴石多晶光致发光片1置于真空度约为1×10-3Pa的真空室内,在其表面上用电子束蒸发方法沉积厚度为10nm 的SiO2隔离膜4,然后在真空室内,将发光片加热到200℃,再用电阻加热蒸发方法沉积一层厚约为50nm的Ag膜,用电子束刻蚀方法制得Ag纳米金属阵列薄层2。该金属阵列为圆饼形阵列,呈三角形分布,Ag圆饼颗粒的直径为100nm,颗粒之间的距离为200 nm周期为300nm。其上再用PECVD方法沉积一层厚度为20nm的SiNx保护膜3,形成具有表面等离子体激元增强效应的光致发光晶片,实现荧光增强2.0~2.5倍。
实施例5
如图2所示,将钇铝石榴石多晶光致发光片1置于真空度约为1×10-3Pa的真空室内,在其表面上用电子束蒸发方法沉积厚度为20nm 的SiO2隔离膜4,然后在真空室内,将发光片加热到200℃,再用溅射沉积方法沉积一层厚约为320nm的Ag膜,在氩气气氛下350℃退火40分钟,制得Ag金属岛状金属颗粒层2。其上再用电子束蒸发方法沉积一层厚度为30nm的SiO2保护膜3,形成具有表面等离子体激元增强效应的光致发光晶片,实现荧光增强1.8~2.0倍。
实施例6
如图3所示,在钇铝石榴石多晶光致发光片1的正面和背面上,采用PECVD方法沉积厚8~10nm的SiNx隔离膜4,然后再在正面和背面的SiNx隔离膜4上用磁控溅射方法沉积厚为50~60nm的Ag膜,再在氢气氛下300~320℃温度退火处理20min,在光致发光片1的正面和背面的SiNx隔离膜4表面上形成具有岛状Ag纳米颗粒层2,然后再在正面和背面的Ag纳米颗粒层2上用电子束蒸发沉积一层厚15~20nm的SiO2保护膜3,最终形成双面表面等离子体激元增强发光晶片,其荧光增强1.5~1.8倍。
实施例7
如图4所示,采用钇铝石榴石多晶光致发光片1,该发光片的正面和背面都具有凹凸织构的粗糙表面5,在其正面和背面上溅射沉积厚12nm的SiNx隔离膜4,然后再在正面和背面的SiNx隔离膜4上,在高纯氩气氛中用磁控溅射方法沉积一层厚为60~70nm的Ag金属膜,在高纯氮气氛中320~350℃温度下退火处理25min,在光致发光片1的正面和背面的SiNx隔离膜4表面上形成呈渝渗岛状的Ag纳米膜层2,再分别在正面和背面的Ag纳米颗粒层2上用真空中电子束加热蒸发方法沉积厚15nm的SiO2保护膜3,最终形成具有双重表面等离子体激元增强效应的发光晶片,其荧光增强2.0~2.5倍。
实施例8
如图5所示,在钇铝石榴石荧光体加硅胶粘结剂粘合成的光致发光片6正面和背面用PECVD方法沉积厚10nm的SiNx隔离膜4,然后再在正面和背面的SiNx隔离膜4上用真空蒸发方法沉积一层厚为35~40nm的Ag膜,在180~200℃温度下处理20min,在光致发光片6的正面和背面的SiNx隔离膜4上形成表面粗糙的Ag纳米颗粒层2,在正面和背面的Ag纳米颗粒层2上再用电子束蒸发沉积一层厚15nm的SiO2保护膜3,最终形成具有双面表面等离子体激元增强效应的光致发光晶片,其荧光增强为1.3~1.5倍。
实施例9
如图6所示,将具有倒装结构的波长为420nm~470nm的蓝光LED芯片7通过共晶焊粘结到陶瓷基板12上,LED芯片7位置在LED器件壳体13的反光杯中央10; LED芯片7的电极通过导电金线焊接到器件的外电极;向反光杯10注入透明绝缘封装胶11直至LED芯片7高度的1/3左右,引出金线嵌入透明绝缘封装胶11中;在LED芯片7的发光面上涂覆钇铝石榴石荧光粉层8,再在荧光粉层8的表面上用电子束蒸发沉积厚度为10nm的SiO2隔离膜4,然后用真空中电阻加热方法沉积一层厚为35nm的Ag膜,再在氮气氛中,200℃温度下热处理15min,形成具有粗糙表面的Ag纳米颗粒层2,其上再用电子束蒸发方法沉积一层厚10nm的SiO2保护膜3。然后再注入透明绝缘封装胶11直至光致发光晶片高度的2/3,完成器件封装,形成白光LED器件,与同样方法制备的不含表面等离子体激元金属颗粒层的发光晶片相比,其发光效率提高5%-10%,可达到128lm/W。
实施例10
如图7所示,在LED芯片7的发光面上涂覆钇铝石榴石荧光粉层8,再在荧光粉层8的表面上用电子束蒸发沉积厚度为10nm的SiO2隔离膜4,然后用用电子束蒸发方法沉积一层厚为45nm的Au膜,再在氮气氛中,250℃温度下热处理25min,形成具有粗糙表面的Au纳米颗粒层2,其上再用电子束蒸发方法沉积一层厚10nm的SiO2保护膜3,安装上透镜,完成器件封装,形成具有表面等离子体激元增强的白光LED器件。与同样方法制备的不含表面等离子体激元金颗粒层的白光LED器件相比,增强了光发射,发光效率可达125lm/W。
实施例11
如图8所示,将多芯片集成的波长为420nm~470nm的蓝光LED芯片7通过共晶焊接粘结到导热金属基板14上,LED芯片7位于反光杯中央10,LED芯片7电极通过导电金线15与器件外电极16相联接,用透明胶17将用实施例2制备的表面等离子体激元光增强晶片1、2、3、4粘结到下部中空上部实心的透镜18上,然后再与壳体19粘合,形成中空的白光LED器件,与同样方法制备的不含表面等离子体激元金属颗粒层的发光晶片相比,其发光效率提高10%~20%,发光效率可达136lm/W。
实施例12
如图9所示,将一个或多个波长为420nm~470nm的蓝光LED芯片7用共晶焊固定在灯杯20中部的基板21上,并用金线将各LED芯片7的电极引出到金属芯印刷电路板22(MCPCB)上,再通过灯杯20中的控制电路23,用导线联接到灯头的外电极24。基板21的LED芯片7的两侧分别设有支架32,将由实施例5制备的表面等离子体激元光增强晶片1、2、3、4粘贴在支架32上,然后安装上灯杯透明面板25,形成具有表面等离子体激元效应的白光LED灯泡,发光效率可达122lm/W。
同样的结构还可用于制造管形LED灯。
实施例13
如图10所示,将波长为420nm~470nm的蓝光LED芯片7安置在金属芯印刷电路板(MCPCB)26上,并通过导线联接到外部电极,在导光板27上粘贴由实施例4制备的表面等离子体激元光增强晶片1、2、3、4,并安装在平面光源的内框架28上,再覆盖上扩散板29和透明面板30,四周装上边框31,形成中空的含表面等离子体激元金属颗粒层的白光LED平面光源,发光效率可达85lm/W。
Claims (21)
1.光增强光致发光片材,其特征在于:该发光片材包括光致发光片材和能产生表面等离子体激元光增强效应的金属层,金属层设置在光致发光片材的表面。
2.根据权利要求1所述的光增强光致发光片材,其特征在于:金属层的厚度为20~350nm。
3.根据权利要求2所述的光增强光致发光片材,其特征在于:金属层的形貌为金属阵列膜、金属岛状薄膜、金属渝渗岛状薄膜或者表面粗糙的金属薄膜。
4.根据权利要求1或2所述的光增强光致发光片材,其特征在于:金属层为纳米颗粒层。
5.根据权利要求1或2所述的光增强光致发光片材,其特征在于:金属层选用银、金、铝、铜和铂中的一种。
6.根据权利要求1或2所述的光增强光致发光片材,其特征在于:所述的金属层选用银或金。
7.根据权利要求 1或2所述的光增强光致发光片材,其特征在于:光致发光片材与金属层之间设有透明介质隔离膜。
8.根据权利要求 7所述的光增强光致发光片材,其特征在于:所述的透明介质隔离膜选自SiNx或SiO2。
9.根据权利要求8所述的光增强光致发光片材,其特征在于:所述的透明介质隔离膜的厚度为5~20nm。
10.根据权利要求 1或2所述的光增强光致发光片材,其特征在于:金属层的外侧设有透明保护膜。
11.根据权利要求10所述的光增强光致发光片材,其特征在于:所述的透明保护膜选自SiO2、SiNx或Zn0。
12.根据权利要求10所述的光增强光致发光片材,其特征在于:所述的透明保护膜的厚度为10~30nm。
13.根据权利要求1或2所述的光增强光致发光片材,其特征在于:光致发光片材为片状材料,片状材料的正面、背面或两面同时具有凹凸织构的粗糙表面。
14.根据权利要求1或2所述的光增强光致发光片材,其特征在于:光致发光片材为单晶光致发光片、多晶光致发光片或用粘合剂粘结的荧光粉材料,单晶光致发光片和多晶光致发光片为不掺加任何树脂和其它粘结剂的片状晶体。
15.根据权利要求14所述的光增强光致发光片材,其特征在于:所述的单晶光致发光片或多晶光致发光片,厚度≥20μm,晶粒的尺寸≥10μm。
16.根据权利要求14所述的光增强光致发光片材,其特征在于:所述的单晶光致发光片、多晶光致发光片选自铝酸盐;所述的荧光粉材料选自铝酸盐、硅酸盐、磷酸盐、钼酸盐、钒酸盐、钨酸盐、氮化物、氧化物和硫化物中的一种。
17.根据权利要求14所述的光增强光致发光片材,其特征在于:单晶光致发光片的厚度为30~200μm,多晶光致发光片的厚度为50~200μm。
18.光增强发光二极管,该发光二极管包括LED芯片,其特征在于:LED芯片发光面的一侧设有权利要求1或2所述的光增强光致发光片材。
19.根据权利要求18所述的光增强发光二极管,其特征在于:光致发光片材为片状材料,选自单晶光致发光片、多晶光致发光片或用粘合剂粘结的荧光粉光致发光片中的一种,光增强光致发光片材通过镶嵌或粘贴的方式设置在LED芯片的发光面的上方。
20.根据权利要求18所述的光增强发光二极管,其特征在于:光增强光致发光片材与LED芯片之间设有间隙。
21.根据权利要求18所述的光增强发光二极管,其特征在于:光致发光片材为涂布于LED芯片上的用粘合剂粘结的荧光粉材料,荧光粉材料表面设有透明介质隔离膜,所述的金属层设置在透明介质隔离膜的表面,金属层的表面设置有透明保护膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011200307929U CN202030697U (zh) | 2011-01-29 | 2011-01-29 | 光增强光致发光片材和光增强发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011200307929U CN202030697U (zh) | 2011-01-29 | 2011-01-29 | 光增强光致发光片材和光增强发光二极管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202030697U true CN202030697U (zh) | 2011-11-09 |
Family
ID=44893003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011200307929U Expired - Fee Related CN202030697U (zh) | 2011-01-29 | 2011-01-29 | 光增强光致发光片材和光增强发光二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202030697U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102903790A (zh) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | 半导体太阳电池表面的多层金属纳米颗粒结构及制备方法 |
TWI462344B (zh) * | 2011-12-08 | 2014-11-21 | Univ Nat Pingtung Sci & Tech | 一種高效率白光led封裝結構 |
CN111355115A (zh) * | 2020-03-02 | 2020-06-30 | 陕西科技大学 | 基于金银核壳纳米棒-金属薄膜的有机固体激光器及制备方法 |
-
2011
- 2011-01-29 CN CN2011200307929U patent/CN202030697U/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI462344B (zh) * | 2011-12-08 | 2014-11-21 | Univ Nat Pingtung Sci & Tech | 一種高效率白光led封裝結構 |
CN102903790A (zh) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | 半导体太阳电池表面的多层金属纳米颗粒结构及制备方法 |
CN111355115A (zh) * | 2020-03-02 | 2020-06-30 | 陕西科技大学 | 基于金银核壳纳米棒-金属薄膜的有机固体激光器及制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102154010B (zh) | 光增强光致发光材料及其制备方法和应用 | |
McKittrick et al. | Down conversion materials for solid‐state lighting | |
JP5313173B2 (ja) | pcLEDのためのドープしたガーネット製の発光団 | |
KR101440232B1 (ko) | 이방성 금속 나노입자를 이용한 발광효율이 증대된 광변환 발광소자 | |
TW467874B (en) | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device | |
TW201015742A (en) | Light emitting diode device and manufacturing method thereof | |
JP6369774B2 (ja) | 発光装置 | |
CN105762249A (zh) | 使用非极性或半极性的含镓材料和磷光体的白光器件 | |
CN106654028A (zh) | 一种主动增亮膜及其制备方法 | |
CN103489998A (zh) | 发光组件及其制造方法以及具有该发光组件的led照明装置 | |
CN202030697U (zh) | 光增强光致发光片材和光增强发光二极管 | |
CN103840056A (zh) | 表面等离子体荧光增强的led光源 | |
Tian et al. | Emission-enhanced high-performance Al2O3–Ce:(Y, Tb) AG composite ceramic phosphors for high-brightness white LED/LD illumination | |
WO2011022881A1 (zh) | 含氮化物发光元件、其制造方法及其发光方法 | |
Kwon et al. | Plasmonic-enhanced luminescence characteristics of microscale phosphor layers on a ZnO nanorod-arrayed glass substrate | |
CN106711294A (zh) | 一种发光二极管的外延片及制备方法 | |
CN101140963A (zh) | 一种提高倒装焊芯片亮度的方法 | |
Islam et al. | White light-emitting diodes: Past, present, and future | |
Wu et al. | Enhanced photoluminescence quantum yield of red‐emitting CdTe: Gd3+ QDs for WLEDs applications | |
KR101127480B1 (ko) | 박막형광체 제조방법과 박막형광체 및 이를 이용한 제품 | |
CN102244175A (zh) | 发光二极管及其制造方法 | |
CN202564439U (zh) | 半导体发光器件 | |
CN109461804A (zh) | 新型白光发光元器件及其制备方法 | |
CN110164910A (zh) | 颜色转换层及其制备方法、显示装置 | |
CN102005511B (zh) | 发光元件及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180104 Address after: Yuhang Xianlin District of Hangzhou City, Zhejiang province 311122 Xian Xing Lu 31, No. 33 Patentee after: Hangzhou Hangzhou Ke optoelectronic group Limited by Share Ltd Address before: 310012 9-2-301 village, Wen two road, Hangzhou, Zhejiang, China Patentee before: Chen Zhegen |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20190129 |
|
CF01 | Termination of patent right due to non-payment of annual fee |