CN202025762U - High-speed thyristor with segmented width-changing involute multi-fingered amplifying gate structure - Google Patents

High-speed thyristor with segmented width-changing involute multi-fingered amplifying gate structure Download PDF

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Publication number
CN202025762U
CN202025762U CN2011201704009U CN201120170400U CN202025762U CN 202025762 U CN202025762 U CN 202025762U CN 2011201704009 U CN2011201704009 U CN 2011201704009U CN 201120170400 U CN201120170400 U CN 201120170400U CN 202025762 U CN202025762 U CN 202025762U
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China
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gate pole
width
involute
speed thyristor
thyristor
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Expired - Lifetime
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CN2011201704009U
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Chinese (zh)
Inventor
王勇
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HANGZHOU HANAN SEMICONDUCTOR CO Ltd
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HANGZHOU HANAN SEMICONDUCTOR CO Ltd
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Abstract

The utility model discloses a high-speed thyristor with a segmented width-changing involute multi-fingered amplifying gate structure, which is provided with an amplifying gate electrode G, a cathode K and an anode A, wherein the amplifying gate electrode G is radially distributed in an involute shape; and the width of the part of the amplifying gate electrode G, which is in an involute shape and is positioned in the center, is greater than that of the part of the amplifying gate electrode G, which is positioned outside the amplifying gate electrode G. According to the high-speed thyristor with the segmented width-changing involute multi-fingered amplifying gate structure, by improving an involute-shaped gate structure, the gate control starting time of the high-speed thyristor, di/dt tolerance, the gate electrode control starting uniformity, the starting dynamic thermal symmetry, high-temperature reliability, surge current and other performances are remarkably improved.

Description

The wide change involute of segmentation refers to amplify the gate structure high speed thyristor more
Technical field
The utility model relates to the wide change involute of a kind of segmentation and refers to amplify the gate structure high speed thyristor more.
Background technology
The operating frequency of traditional high speed thyristor generally about 400HZ, improves the operating frequency of high speed thyristor, at first will improve the switching speed of high speed thyristor, just must shorten the turn-off time and the service time of high speed thyristor.But every electrical quantity of thyristor is one and interdepends and mutual restriction, the entity that counteracts each other that the change of a parameter often drives the variation of all multi-parameters.As the shortening of device turn-off time and service time, will cause the deterioration for the vital a series of electrical quantitys of frequency characteristic such as on-state voltage drop, expansion rate, di/dt, switching loss, blocking voltage simultaneously.
In the prior art by improve amplifying gate structure, the amplification gate pole that makes the high speed thyristor surface all radially, this irradiation structure is made of many involutes, as shown in Figure 1.Can improve service behaviour within the specific limits though have the thyristor of the amplification gate pole of involute structure, but because that involute refers to amplify the finger of gate pole more is very long, refer to amplify in the dynamic process of gate pole auxiliary triggering conducting at involute more, the dead resistance of amplification gate pole finger has limited the trigger current intensity in the thyristor zone of finger end, has caused long, shortcomings such as the di/dt tolerance is low, gate pole control unlatching lack of homogeneity, the dynamic thermal symmetry of unlatching is poor, high temperature reliability is poor, surge current is low of gate pole control opening time.
Summary of the invention
The technical problems to be solved in the utility model provides a kind of wide change involute of segmentation that can improve the terminal trigger current intensity of involute structure gate pole and refers to amplify the gate structure high speed thyristor more.
For solving the problems of the technologies described above, the utility model adopts following technical scheme: this high speed thyristor is provided with and amplifies gate pole G, negative electrode K and anode A, described amplification gate pole G is involute shape radiation profiles, described amplification gate pole G is the part of involute shape, and this part is positioned at the width that amplifies gate pole G center and is positioned at the width that amplifies gate pole G outside greater than this part.
By increasing the cross section size of amplifying gate pole G, play the size that reduces dead resistance.Keep strong state at the trigger current of the end that amplifies gate pole thus.
As of the present utility model preferred, the part that described amplification gate pole G is the involute shape comprises one section part and one section part that width is little that width is big, the part that described width is big is positioned at amplifies gate pole G center, and the part that described width is little is and amplifies the gate pole G outside.This reasonable in design, convenient for production.
As of the present utility model preferred, the partial width that described amplification gate pole G is the involute shape reduces gradually along amplifying gate pole G center direction laterally.This structure can guarantee that the trigger current that amplifies each position of gate pole G keeps homogeneous, reaches ideal control effect.
The utility model adopts technique scheme: the wide change involute of this segmentation refers to amplify the gate structure high speed thyristor more, by improving involute shape gate structure, work improve fast should the speed thyristor gate pole control opening time, di/dt tolerance, gate pole control open uniformity, open performances such as dynamic thermal symmetry, high temperature reliability, surge current.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is further described in detail.
Fig. 1 refers to amplify the structural representation of gate structure high speed thyristor more for involute in the prior art;
Fig. 2 refers to amplify the structural representation of first kind of embodiment of gate structure high speed thyristor more for the wide change involute of the utility model segmentation;
Fig. 3 refers to amplify the structural representation of second kind of embodiment of gate structure high speed thyristor more for the wide change involute of the utility model segmentation.
Embodiment
First kind of embodiment of the utility model, as shown in Figure 2, this high speed thyristor is provided with and amplifies gate pole G1, negative electrode K and anode A.Amplify gate pole G1 and be involute shape radiation profiles, amplify gate pole G1 as control end, it plays the effect of the negative electrode K electric current that zooms in or out.Each finger is the center that the end of every involute shape amplification gate pole G1 all is positioned at thyristor, and the other end is positioned at the edge of thyristor.The involute shape amplifies gate pole G1 and is made up of part and one section less part of width of one section wider width.This section that width is big is positioned at the center that the center of amplifying gate pole G1 promptly is positioned at thyristor, and it is the edge of thyristor that this section that width is little is positioned at the outside of amplifying gate pole G1.The width uniformity of this section that width is big, the width uniformity of this section that width is little.Because the dead resistance of this section that width is big is less, makes that the trigger current intensity of this section that width is little is stronger.Can shorten gate pole control opening time length, raising di/dt tolerance, gate pole control unlatching uniformity thus, open effects such as dynamic thermal symmetry, high temperature reliability, surge current.
Second kind of embodiment of the utility model, as shown in Figure 3, with the difference of first kind of embodiment be the involute shape amplification gate pole G1 its on the direction laterally of thyristor center, width dwindles gradually.Compare with first kind of embodiment, the amplification gate pole G1 segmental structure position among this embodiment is obvious, but still is in segmental structure from microcosmic.Because the amplification gate pole G1 section length among this embodiment is very short, make that the amplification gate pole G1 of involute shape forms smooth-going linear structure under the macrostate.The same with the principle of first kind of embodiment, reduce the dead resistance resistance by increasing amplification gate pole G1 width, and then make amplification gate pole G1 end that stronger trigger current be arranged.But among this embodiment, segmentation is many, thereby the whole trigger current that goes out that produces of amplification gate pole G1 will be more even, so just can make the performance of whole thyristor that further raising is arranged.

Claims (3)

1. high speed thyristor, this high speed thyristor is provided with and amplifies gate pole G (1), negative electrode K and anode A, described amplification gate pole G (1) is involute shape radiation profiles, it is characterized in that: described amplification gate pole G (1) is the part of involute shape, and this part is positioned at the width that amplifies gate pole G (1) center and is positioned at the width that amplifies gate pole G (1) outside greater than this part.
2. according to the described high speed thyristor of claim 1, it is characterized in that: the part that described amplification gate pole G (1) is the involute shape comprises one section part and one section part that width is little that width is big, the part that described width is big is positioned at amplifies gate pole G (1) center, and the part that described width is little is and amplifies gate pole G (1) outside.
3. according to the described high speed thyristor of claim 1, it is characterized in that: the partial width that described amplification gate pole G (1) is the involute shape reduces gradually along amplifying gate pole G (1) center direction laterally.
CN2011201704009U 2011-05-24 2011-05-24 High-speed thyristor with segmented width-changing involute multi-fingered amplifying gate structure Expired - Lifetime CN202025762U (en)

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CN2011201704009U CN202025762U (en) 2011-05-24 2011-05-24 High-speed thyristor with segmented width-changing involute multi-fingered amplifying gate structure

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102800698A (en) * 2011-05-24 2012-11-28 杭州汉安半导体有限公司 Fast switching thyristor with subsection width-variable involute multi-finger amplifying gate pole structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102800698A (en) * 2011-05-24 2012-11-28 杭州汉安半导体有限公司 Fast switching thyristor with subsection width-variable involute multi-finger amplifying gate pole structure
CN102800698B (en) * 2011-05-24 2015-06-03 杭州汉安半导体有限公司 Fast switching thyristor with subsection width-variable involute multi-finger amplifying gate pole structure

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Address after: The reclamation of Hangzhou Economic Development Zone Hangzhou city Zhejiang province 310018 Street No. 479 Hangzhou Hanan Semiconductor Co. Ltd.

Patentee after: Hangzhou Hanan Semiconductor Co., Ltd.

Address before: Hangzhou City, Zhejiang province 310018 Hangzhou economic and Technological Development Zone No. 3 Street No. 32 Hangzhou Hanan Semiconductor Co. Ltd.

Patentee before: Hangzhou Hanan Semiconductor Co., Ltd.

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Granted publication date: 20111102

Effective date of abandoning: 20150603

RGAV Abandon patent right to avoid regrant