CN201971893U - Multi-chamber gas circuit system for plasma enhanced chemical vapor deposition device - Google Patents
Multi-chamber gas circuit system for plasma enhanced chemical vapor deposition device Download PDFInfo
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- CN201971893U CN201971893U CN2010206538871U CN201020653887U CN201971893U CN 201971893 U CN201971893 U CN 201971893U CN 2010206538871 U CN2010206538871 U CN 2010206538871U CN 201020653887 U CN201020653887 U CN 201020653887U CN 201971893 U CN201971893 U CN 201971893U
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- gas circuit
- gas
- deposit cavity
- pneumatic baffle
- circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a multi-chamber gas circuit system for a plasma enhanced chemical vapor deposition device, which comprises eight gas circuits, namely a H2 gas circuit, an Ar gas circuit, a CH4 gas circuit, a PH3 gas circuit, an SiH4 gas circuit, a GeH4 gas circuit, a TMB gas circuit and an NF3 gas circuit. Chambers and the gas circuits can be cleaned by the aid of the argon blowing gas circuit, electrodes can be cleaned by the aid of the NF3 gas circuit, a mechanical pumping system has evacuation and over-pressure gas discharge functions, all the gas circuits can meet requirements of silicon thin film solar battery preparation technique to gases, and the multi-chamber gas circuit system is safe and reliable.
Description
Technical field
The utility model relates to a kind of plasma enhanced chemical vapor deposition (PECVD) equipment that is used to prepare silicon-based film solar cells, specifically is meant the multi-cavity chamber air-channel system in this equipment.
Background technology
The key equipment of preparation silicon-based film solar cells is a plasma enhanced chemical vapor deposition equipment, and ensures that one of key that every technology is carried out smoothly is air-channel system reasonable in design.Silicon-based film solar cells to the requirement of gas circuit is: 1 air-channel system can provide each chamber processes process required all kinds of gases; 2 requirement and the isolating principles of oxidisability reducing gas according to the mixed gas of different process process, each road gas will have independent gas circuit to lead to gas mixing pipe; The design of 3 gas circuits will prevent NF
3, (CH
3)
3B, PH
3Deng poisonous gas and SiH
4, H
2Deng the leakage of flammable explosive gas, must satisfy the high vacuum requirement, prevent SiH
4With airborne O
2Reaction generates silica powder and stops up gas circuit, and the purging cleaning function will be arranged, and residual gas can be discharged after technology finishes.
Present air-channel system is primarily aimed at single chamber PECVD, has multiple unreasonable design.As No. 200710094290.0, Chinese invention patent, this patent can only clean under meter place part gas circuit, the still residual working gas of gas circuit other parts from the gas circuit design; Changing the air of gas cylinder inflow pipeline can only extract out from the chamber vacuum system, make gas circuit element and the irregular ingresss of air of cavity such as under meter, valve; The air path part overvoltage do not have overvoltage protection in the gas circuit design, if can only bring bad influence to accurate sensors such as under meters along gas circuit from the cavity bleed.
Summary of the invention
At the problem of above-mentioned silicon-based film solar cells to the requirement and the existence of air-channel system, the utility model provides a kind of and the supporting multi-cavity chamber air-channel system of plasma enhanced chemical vapor deposition equipment, to satisfy the growth requirement of silicon-based film solar cells.
Multi-cavity of the present utility model chamber air-channel system comprises: eight kinds of sources of the gas are respectively H
2Gas circuit 1, Ar gas circuit 2, CH
4Gas circuit 3, PH
3Gas circuit 4, SiH
4Gas circuit 5, GeH
4Gas circuit 6, TMB gas circuit 7 and NF
3Gas circuit 8.The working direction of gas circuit is provided with prime Pneumatic baffle valve 10 separately.
Said H
2Gas circuit 1 and SiH
4Gas circuit 5 is behind prime Pneumatic baffle valve 10, be split into three tributary gas circuits, this three tributaries gas circuit is connected with P deposit cavity 11, I deposit cavity 12 and N deposit cavity 13 respectively, is disposed with under meter 14 and back level Pneumatic baffle valve 15 on the three tributary gas circuits of P deposit cavity 11, I deposit cavity 12 and N deposit cavity 13 respectively leading to.
Said NF
3Gas circuit 8 is provided with under meter 14 behind prime Pneumatic baffle valve 10, be split into three tributary gas circuits thereafter, this three tributaries gas circuit is connected with P deposit cavity 11, I deposit cavity 12 and N deposit cavity 13 respectively, and the three tributary gas circuits of leading to P deposit cavity 11, I deposit cavity 12 and N deposit cavity 13 are provided with back level Pneumatic baffle valve 15.
Said Ar gas circuit 2 is provided with under meter 14 behind prime Pneumatic baffle valve 10, be split into three tributary gas circuits or four tributary gas circuits thereafter, and three tributary gas circuits are connected with P deposit cavity 11, I deposit cavity 12 and N deposit cavity 13 by back level Pneumatic baffle valve 15 respectively; Four tributary gas circuits are connected with P deposit cavity 11, I deposit cavity 12, N deposit cavity 13 and transfer chamber 18 by back level Pneumatic baffle valve 15 respectively.
Said CH
4Gas circuit 3, PH
3Gas circuit 4, GeH
4Gas circuit 6, TMB gas circuit 7 are disposed with under meter 14 and back level Pneumatic baffle valve 15, then CH behind prime Pneumatic baffle valve 10 separately
4 Gas circuit 3 is connected PH with P deposit cavity 11
3 Gas circuit 4 is connected with N deposit cavity 13, GeH
4Gas circuit 6 is connected with I deposit cavity 12, TMB gas circuit 7 is connected with P deposit cavity 11.
At CH
4Gas circuit 3, PH
3Gas circuit 4, SiH
4Gas circuit 5, GeH
4Gas circuit 6, TMB gas circuit 7 and NF
3Be connected with Pneumatic baffle valve 18 and A check valve 19 in turn by threeway before each prime Pneumatic baffle valve 10 of gas circuit 8, and be parallel between the prime Pneumatic baffle valve 10 and under meter 14 of Ar gas circuit 2.
Be connected with manual flapper valve 9 in ingress by threeway, and the B check valve 16 that passes through in parallel is connected with mechanical pump 17 near eight kinds of sources of the gas.
Distinguishing feature of the present utility model is:
1. can satisfy the requirement to working gas such as preparation amorphous silicon thin-film solar cell, amorphous silicon/microcrystalline silicon tandem thin-film solar cells, amorphous a-SiC film, crystallite μ c-SiC film, amorphous a-SiGe film.
2. the argon purge gas circuit is set can clean chamber and gas circuit, cleans but NF3 gas circuit counter electrode is set.
3. the design of bleeding of the mechanical pump before each prime Pneumatic baffle valve of 8 kinds of source of the gas gas circuits has the effect that vacuumizes with the overvoltage venting.
Description of drawings
Fig. 1 is three chamber air-channel system structure iron;
Fig. 2 is four chamber air-channel system structure iron.
Embodiment
Below in conjunction with drawings and Examples embodiment of the present utility model is elaborated:
See Fig. 1, whole gas circuit comprises 8 kinds of sources of the gas: be respectively SiH
4, H
2, NF
3, Ar, CH
4, TMB, PH
3, GeH
4To P deposit cavity air feed is SiH
4, H
2, NF
3, Ar, TMB, CH
4Six kinds of sources of the gas, SiH
4, H
2, three kinds of gases of TMB are used to prepare boron doped p type a-Si:H layer, if wideer spectrographic P type a-SiC of preparation or μ C-SiC layer then need to feed CH by processing requirement
4To I deposit cavity air feed is SiH
4, H
2, Ar, NF
3, GeH
4Five kinds of sources of the gas, SiH
4And H
2Be used to prepare eigen I layer a-Si:H, in overlapping thin film solar battery, feed GeH by processing requirement
4Preparation a-SiGe intrinsic layer.To N deposit cavity air feed is SiH
4, H
2, NF
3, Ar, PH
3Five kinds of sources of the gas, SiH
4, H
2, PH
3Three kinds of gases are used to prepare the N type a-Si:H layer of phosphorus doping.
Ar gas circuit source is used for providing etching and purging, NF to whole air-channel system
3The gas circuit source is used to clean cavity and PECVD electrode.
The utility model is at SiH
4, NF
3, CH
4, TMB, GeH
4, PH
3Have the Ar air-blowing to sweep on the gas circuit of six kinds of sources of the gas, the source of the gas of purging is positioned at the front of prime pneumavalve, the remaining working gas in the whole gas circuit all can be purged to remove, and it is to prevent that the working gas refluence from entering Ar gas gas circuit that the A check valve is set.After all technologies are finished, close all gas circuit valves, open mechanical pump, regulate manual flapper valve respectively pump take out SiH
4, NF
3, CH
4, TMB, GeH
4, PH
3Six kinds of sources of the gas the prime Pneumatic baffle valve between the source of the gas gas circuit, close manual flapper valve after reaching vacuum tightness, pump cuts out mechanical pump after taking out end respectively, then open the prime Pneumatic baffle valve of Ar gas gas circuit, purge gas circuit and each deposit cavity of six kinds of sources of the gas respectively, take out by the mechanical pump pump with the remaining working gas of each deposit cavity in the gas circuit.
Select for use Ar gas can take into account the requirement of oxidizing gas and reducing gas as sweeping gas, Ar gas also is a kind of working gas simultaneously, can simplify circuit design and take into account requirement in the technology.
Polishing stainless steel pipe in whole pipelines of this gas circuit adopt.
Fig. 2 is used for face battle array solar cell cluster formula air-channel system, is to have increased a transfer chamber at three deposit cavity adjacencies with the difference of Fig. 1, and transfer chamber also has the Ar air-blowing to sweep, and purpose also is a wash chamber.
Claims (1)
1. multi-cavity chamber air-channel system that is used for plasma enhanced chemical vapor deposition equipment, comprising: eight kinds of gas circuits are respectively H
2Gas circuit (1), Ar gas circuit (2), CH
4Gas circuit (3), PH
3Gas circuit (4), SiH
4Gas circuit (5), GeH
4Gas circuit (6), TMB gas circuit (7) and NF
3Gas circuit (8) is characterized in that:
The working direction of gas circuit is provided with prime Pneumatic baffle valve (10) separately;
Said H
2Gas circuit (1) and SiH
4Gas circuit (5) is behind prime Pneumatic baffle valve (10), be split into three tributary gas circuits, this three tributaries gas circuit is connected with P deposit cavity (11), I deposit cavity (12) and N deposit cavity (13) respectively, is disposed with under meter (14) and back level Pneumatic baffle valve (15) on the three tributary gas circuits of leading to P deposit cavity (11), I deposit cavity (12) and N deposit cavity (13) respectively;
Said NF
3Gas circuit (8) is provided with under meter (14) behind prime Pneumatic baffle valve (10), be split into three tributary gas circuits thereafter, this three tributaries gas circuit is connected with P deposit cavity (11), I deposit cavity (12) and N deposit cavity (13) respectively, and the three tributary gas circuits of leading to P deposit cavity (11), I deposit cavity (12) and N deposit cavity (13) are provided with back level Pneumatic baffle valve (15);
Said Ar gas circuit (2) is provided with under meter (14) behind prime Pneumatic baffle valve (10), be split into three tributary gas circuits or four tributary gas circuits thereafter; Three tributary gas circuits are connected with P deposit cavity (11), I deposit cavity (12) and N deposit cavity (13) by back level Pneumatic baffle valve 15 respectively; Four tributary gas circuits are connected with P deposit cavity (11), I deposit cavity (12), N deposit cavity (13) and transfer chamber (18) by back level Pneumatic baffle valve (15) respectively;
Said CH
4Gas circuit (3), PH
3Gas circuit (4), GeH
4Gas circuit (6), TMB gas circuit (7) are disposed with under meter (14) and back level Pneumatic baffle valve (15), then CH behind prime Pneumatic baffle valve (10) separately
4Gas circuit (3) is connected PH with P deposit cavity (11)
3Gas circuit (4) is connected with N deposit cavity (13), GeH
4Gas circuit (6) is connected with I deposit cavity (12), TMB gas circuit (7) is connected with P deposit cavity (11);
At CH
4Gas circuit (3), PH
3Gas circuit (4), SiH
4Gas circuit (5), GeH
4Gas circuit (6), TMB gas circuit (7) and NF
3Each prime Pneumatic baffle valve (10) of gas circuit (8) is preceding to be connected with Pneumatic baffle valve (18) and A check valve (19) in turn by threeway, and is parallel between the prime Pneumatic baffle valve (10) and under meter (14) of Ar gas circuit (2);
Be connected with manual flapper valve (9) in ingress by threeway, and the B check valve (16) that passes through in parallel is connected with mechanical pump (17) near eight kinds of sources of the gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206538871U CN201971893U (en) | 2010-12-10 | 2010-12-10 | Multi-chamber gas circuit system for plasma enhanced chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206538871U CN201971893U (en) | 2010-12-10 | 2010-12-10 | Multi-chamber gas circuit system for plasma enhanced chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201971893U true CN201971893U (en) | 2011-09-14 |
Family
ID=44577000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206538871U Expired - Fee Related CN201971893U (en) | 2010-12-10 | 2010-12-10 | Multi-chamber gas circuit system for plasma enhanced chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201971893U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105316660A (en) * | 2014-07-31 | 2016-02-10 | 纽富来科技股份有限公司 | Vapor phase growth apparatus and vapor phase growth method |
| CN108070844A (en) * | 2016-11-16 | 2018-05-25 | 矽碁科技股份有限公司 | Atomic layer deposition equipment and air pumping rate control method thereof |
-
2010
- 2010-12-10 CN CN2010206538871U patent/CN201971893U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105316660A (en) * | 2014-07-31 | 2016-02-10 | 纽富来科技股份有限公司 | Vapor phase growth apparatus and vapor phase growth method |
| CN108070844A (en) * | 2016-11-16 | 2018-05-25 | 矽碁科技股份有限公司 | Atomic layer deposition equipment and air pumping rate control method thereof |
| CN108070844B (en) * | 2016-11-16 | 2019-10-18 | 矽碁科技股份有限公司 | Atomic layer deposition equipment and air pumping rate control method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110914 Termination date: 20151210 |
|
| EXPY | Termination of patent right or utility model |