CN201962349U - Normal temperature deposition equipment for high boundary strength diamond film material - Google Patents
Normal temperature deposition equipment for high boundary strength diamond film material Download PDFInfo
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- CN201962349U CN201962349U CN2010206733272U CN201020673327U CN201962349U CN 201962349 U CN201962349 U CN 201962349U CN 2010206733272 U CN2010206733272 U CN 2010206733272U CN 201020673327 U CN201020673327 U CN 201020673327U CN 201962349 U CN201962349 U CN 201962349U
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Abstract
The utility model relates to normal temperature deposition equipment for a high boundary strength diamond film material. A combined anode composed of a flat plate electrode and a tungsten coil electrode is adopted, and an acute angled triangular notch is machined on a tungsten coil anode to form a tip discharge point; in the DC (direct current) plasma discharge, a micropore structure with certain density is formed on the surface of a DLC (diamond-like carbon) film to ensure the DLC film to be a non-continuous film, and the micropore structure is used for reducing the residual stress in the film. By the lifting adjustment of the combined anode, the micropore density formed on the surface of the DLC film can be controlled. A DC-RF (direct current/radio frequency) double power supply system is used as a power supply, and a DC plasma generating source ensures a coating and the film to have good bonding strength and simultaneously ensures the coating and a metal substrate to have good bonding strength; a dense DLC film structure is formed by a RF (radio frequency) method to improve the wear resistant property of the film; and in the meanwhile, the tungsten coil electrode is converted into a hot filament to form a hot filament assisted CVD (chemical vapor deposition) process and improve the deposition rate of the film. The normal temperature deposition equipment has a long service life and is very beneficial to promoting and implementing.
Description
Technical field
The utility model relates to a kind of deposition method and equipment of DLC diamond like carbon film material, particularly relates to the normal temperature depositing device and the normal temperature deposition method thereof of the discontinuous surperficial diamond like carbon film material of a kind of high interfacial bonding strength porous.
Background technology
Diamond like carbon film (Diamond-like Carbon Films is called for short the DLC film) is that characteristics such as a class hardness, optics, electricity, chemistry and tribology all are similar to adamantine amorphous carbon-film.For example, it has characteristics such as high rigidity, friction resistant, unreactiveness, low-k, wide optical band gap, excellent biological compatibility.It can be applied to fields such as machinery, electronics, chemistry, military affairs, aerospace, has broad application prospects.
At present, the method for preparing the DLC film mainly comprises physical vapor deposition and chemical vapour deposition, for example ion beam depositing, cathode arc deposition, sputtering sedimentation and plasma enhanced chemical vapor deposition etc.Though most methods wherein can deposit quality diamond like carbon film preferably, but the complicacy of gas phase compound experiment device and the high temperature of substrate have all caused these methods to have certain limitation, have limited the practical application of DLC diamond like carbon film to a certain extent.
Quasi-diamond (DLC) thin-film material is a most representative class material in low friction solid lubrication high-abrasive material, has realized industrialization the nineties abroad.But in order to widen its range of application, need further to improve its boundary strength, how can further improve its boundary strength is the technology emphasis of various countries' research.Now developed multiple middle transition dielectric material technology, be configured with: Si+DLC, soaked carbon+Cr+DLC, Cr/W+DLC and atom injects nitriding treatment+DLC etc. as handling the DLC diamond like carbon film for the compound surface of mechanical component.Along with continuous technological development and research, its manufacture method also constantly increases, for example: the improvement of PVD physical vaporous deposition technology, can produce no hydrogen DLC diamond like carbon film, and be successfully used to the manufacturing of motor car engine piston ring and connecting bar and crankshaft.Domestic present DLC diamond like carbon film material also is in conceptual phase, do not have the industrialization production technology, but have many units also energetically research and development in, inspire confidence in company, Jilin University, the world, Beijing Diamant Boart Inc. etc. as University of Science ﹠ Technology, Beijing, Shanghai Communications University, Guangdong non-ferrous metal research institute, Shengli Oil Field Dongying enlightening.
At present, the key issue that exists for DLC diamond like carbon film material manufacturing technology aspect is the boundary strength problem that do not solve well, can't practical application thereby cause.It is reported that recently University of Science ﹠ Technology, Beijing gives processing and solved the boundary strength problem by being coated with boron.Boride, silicon, metallic carbide, metal nitride etc. can both solve the interface problem of DLC diamond like carbon film as intermediate layer in fact, but apply and expensive and producing apparatus complicated that sedimentary two procedures will cause the DLC diamond like carbon film, the process that is easy to generate is simultaneously polluted, and the processing of complex construction component (concaveconvex structure) is also had sizable difficulty.
Patent documentation report about DLC diamond like carbon film material preparation aspect also has many, for example: 1, application number is that 200910066757.X, utility model name are called the utility model patent of " a kind of method of diamond like carbon film of low temperature depositing changeable refractive index ", and this utility model patent adopts existing vacuum chamber and Process configuration; At room temperature, regulate substrate to the distance that has between the grid Kaufman ion source; The vacuum tightness of regulating vacuum chamber reaches 2 * 10
-3The Pa magnitude; Select CH
4And H
2As precursor gases, in 4: 1 ratio, be transported in the grid Kaufman ion source, before the deposition beginning, in substrate, apply earlier-negative bias of 20V; After the deposition beginning, the vacuum tightness of vacuum chamber remains on 1 * 10
-2The Pa magnitude, it is 120mA that control has the ionogenic discharging current of grid Kaufman.Ion beam energy can be a diamond like carbon film between the 1.7-2.3 obtaining specific refractory power in the substrate when 100eV-600eV.2, application number is that CN200810103011.7, utility model name are called the utility model patent of " a kind of method of preparing diamond-like film by low voltage liquid phase electrodeposit ", this utility model patent is negative electrode with the indium tin oxide-coated glass, platinized platinum is an anode, methane amide is an electrolytic solution, under normal temperature condition, by between negative and positive two electrodes, applying the volts DS of 3～30V, can on the indium tin oxide-coated glass negative electrode, deposit diamond like carbon film.This method has that equipment is simple, energy consumption is low, sedimentation rate reaches advantages such as the film forming homogeneity is good soon, is easy to realize suitability for industrialized production.3, application number is 200810110529.3, the utility model name is called the utility model patent of " a kind of deposition methods of TiC/DLC multilayer film ", and this utility model patent adopts magnetic to filter titanium arc source depositing Ti layer; Adopt pulse graphite arc source deposition DLC layer; Adopt magnetic to filter titanium arc source and pulse graphite arc source common deposited TiC layer, control Ti content in the TiC layer by the pulse-repetition in regulating impulse graphite arc source.Adopt the internal stress of the sedimentary TiC/DLC multilayer film of arc ion plating (aip) internal stress less than the quasi-diamond single thin film, the performance characteristics that has kept diamond like carbon film high rigidity and low-friction coefficient simultaneously, sedimentary TiC/DLC multilayer film total thickness can reach 2 μ m, and has excellent abrasion resistance properties.
The utility model content
The technical problems to be solved in the utility model is: normal temperature depositing device and normal temperature deposition method thereof that the discontinuous surperficial diamond like carbon film material of a kind of high interfacial bonding strength porous is provided.The crucial difficult problem that can solve the existence of DLC diamond like carbon film material manufacturing technology aspect by technical solutions of the utility model is the boundary strength problem.Utilize technical solutions of the utility model to prepare DLC diamond like carbon film material, can solve the film inner high voltage residual stress problems that contracts well, thereby prepare the discontinuous surperficial diamond like carbon film material of the porous with high interfacial bonding strength.
In order to address the above problem, the technical solution adopted in the utility model is:
The utility model provides a kind of normal temperature depositing device of high interfacial strength diamond like carbon film material, contain the sediment chamber, be communicated with unstripped gas intake ducting and vacuum extractor with the sediment chamber, be provided with the negative electrode Stage microscope that is connected with the plasma generating source negative pole at sediment chamber's inner bottom part, be provided with and the anodal anode that is connected of plasma generating source at the deposition chamber interior upside, wherein anode is electrically connected with the sediment chamber, the sediment chamber is connected with ground wire, and heat filament device, described anode is a composite anode, this composite anode comprises a dull and stereotyped anode and a refractory metal wire coil anode, its middle plateform anode is positioned at refractory metal wire coil anode upside, and dull and stereotyped anode all is connected with the plasma generating source anode with refractory metal wire coil anode; Described plasma generating source is that source and an alternation plasma generating source take place a DC direct current plasma, and the positive pole of two plasma generating sources is connected with sediment chamber's shell, and the negative electrode of two plasma generating sources is connected with negative electrode by isolator respectively.The fusing point of refractory metal wire coil described herein is not less than 1800 ℃.
On described refractory metal silk surface, certain distance offers the triangular notch of band acute angle at interval, and the point of this acute angle is not less than the par, constitutes the point discharge point.
Described refractory metal wire coil anode is the tungsten filament coil anode, perhaps is molybdenum filament coil anode, perhaps is tantalum wire coil anode, and perhaps other fusing points are not less than 1800 ℃ wire coils anode.
Described heat filament device comprises refractory metal wire coil, the direct supply that is used to heat and grounding switch, the two ends of this refractory metal wire coil are connected with the positive and negative electrode of the direct supply that is used to heat respectively, and the supply lead of this refractory metal wire coil keeps break-make by a grounding switch and sediment chamber's shell, and the partition switch is installed on the output terminal of the direct supply that is used to heat simultaneously.
Described alternation plasma generating source is that the source takes place the RF radio frequency plasma, perhaps for the DC pulse plasma source takes place or for high frequency plasma generation source or be microwave plasma generation source, perhaps other alternation plasma generating sources.
Insulate by vitrified pipe between described dull and stereotyped anode and the refractory metal wire coil anode, directly conducting, thus dull and stereotyped anode and refractory metal wire coil anode are fixed as one; Upside in the sediment chamber also is equipped with a riser that is used for distance between composite anode and the negative electrode, thereby makes composite anode move up and down the distance of adjusting between composite anode and the negative electrode by adjusting riser.
About composite anode, the change aspect electrode geometry stands good, for example combined electrode of being constituted of cylindrical anode and cylindrical tungsten filament coil electrode etc.
Vacuum extractor adopts the two-stage vacuum system, and main vacuum pump adopts molecular pump or diffusion pump, and secondary pump adopts rotary-vane vaccum pump.
The utility model is by to the detailed analysis of boundary strength influence factor, utility model a kind of method that can solve the diamond like carbon film boundary strength.The principal element that influences boundary strength has two aspects: the 1) adhesion strength of thin-film material and base material.This is that character by pairing material is determined, such as the interfacial diffusion of the formation of interfacial chemistry key, atom, interface crystal epitaxy etc.; 2) because the caused unrelieved stress of difference of material coefficient of thermal expansion coefficient.Common DLC diamond like carbon film material coefficient of thermal expansion coefficient (2.7 * 10
-6/ (500K)) compare much smallerly with metal base, DLC diamond like carbon film material internal will produce bigger compressive residual stress.In the former research, known at normal temperatures, the bonding strength of DLC diamond like carbon film material and metallic substance is very poor, even it is non-cohesive fully, but the utility model can solve the bonding strength problem of diamond like carbon film and metal base preferably after adding a-Si:H:C transition intermediate layer of material; The main reason of finding to influence DLC diamond like carbon film boundary strength in the utility model research is a compressive residual stress.The utility model is based on the normal temperature deposit, when reducing compressive residual stress, adds the a-Si:H:C transition material that better adhesion strength is arranged with metal base; But in the depositing of thin film process, because deposition and atomic and γ
-Thermionic bombardment still can produce local surfaces high temperature, particularly for the continuous DLC film of big area, still can produce bigger compressive residual stress.Thereby one of solution that the utility model adopts is that divided thin film is slit into small unit, and the stress under compression that the contraction of base material produces each small cellar area is very little.When gordian technique of the present utility model is to deposit the a-Si:H:C intermediate layer, the high-energy that utilizes point discharge to produce, make the a-Si:H:C intermediate layer produce non-sedimentary province at regional area, form discrete intermediate layer, and then produce discrete DLC diamond like carbon film layer, can discharge compressive residual stress effectively, thereby improve the bonding strength at interface.
Positive beneficial effect of the present utility model:
1, in the technical solutions of the utility model, the compound DLC thin-film material of the sedimentary high interfacial bonding strength porous surface of normal temperature structure, solved the difficult problem of compressive residual stress in the film well, special construction by the composite anode 4 in the utility model normal temperature depositing device system, under the condition of DC direct-current plasma discharge, form discontinuous porous a-Si:H:C thin film layer at substrate surface, further form porous surface DLC film on this basis, can discharge effectively thus owing to the inconsistent caused compressive residual stress of thermal expansivity, thereby improve boundary strength.
2, in the deposition process of high interfacial strength diamond like carbon film of the present utility model, realized the target of normal temperature deposit high interfacial strength DLC thin-film material; Normal temperature deposition can keep the accurate to dimension and the form accuracy of origianl component, for the production of Precision Machinery Elements provides condition; The normal temperature deposition can be widened the use restriction of base material simultaneously, can be used in the DLC thin film deposition on low temperature-resistant material surface, has also widened the Application Areas of DLC thin-film material.
3, in the composite anode 4 of the utility model normal temperature depositing device system, by the acute triangle notch of on tungsten filament coil anode 4-2, processing, the point discharge effect takes place with this, the purpose of point discharge effect is in order to form vesicular structure at the DLC film surface, and the adjustable distance structure of composite anode 4 can be adjusted the pore density of DLC film surface effectively, makes under different situations, form appropriate porosity, and reach the releasing effect of the unrelieved stress of the best.
4, source 8 takes place the DC direct current plasma that is adopted in the utility model normal temperature depositing device system and the array mode in source 9 takes place the RF radio frequency plasma, can either form the microvoid structure of certain density in metallic substrate surface, simultaneously also help forming the DLC thin film layer of compact structure, thereby improved the wear resisting property of film greatly.When forming vesicular structure, use the DC direct current plasma that source 8 takes place, produce stable point discharge effect; In order to adjust the DLC membrane structure and to form fine and close thin film layer, adopt the RF radio frequency plasma that source 9 takes place, and tungsten filament coil electrode 4-2 is converted to hot filament, form heated filament assisted CVD chemical vapor deposition processes, improve depositing of thin film speed.
5, the utility model is in the normal temperature deposition method of DLC diamond like carbon film, with Si(CH
3)
4Be unstripped gas, both adhesion strength was preferably arranged in the deposition process with the DLC diamond like carbon film, with metal base the a-Si:H:C thin film layer of adhesion strength is preferably arranged again, thereby solved the problem that DLC diamond like carbon film material does not adhere to metal base at normal temperatures; The point discharge that utilizes the DC direct current plasma that the source takes place simultaneously and produce forms the porous surface structure, for the compound DLC diamond like carbon film that forms the discontinuous surface of porous is laid a good foundation, alleviate compressive residual stress in the film effectively, improved the bonding strength at interface thus.
6, the utility model is in the normal temperature deposition method of DLC diamond like carbon film, at first utilize the DC direct current plasma that the source takes place, refractory metal wire coil anode (as the tungsten filament coil anode) as main anode, the plane plate electrode is as secondary anode, at the a-Si:H:C film surface, form the transition DLC diamond like carbon film bottom of thinner thickness, its objective is: the vesicular structure that 1) forms DLC diamond like carbon film surface continuously, 2) for forming the DLC diamond like carbon film, (as the RF radio frequency method) in the alternating electric field of next step alternation plasma generating source lay the first stone, to form the DLC diamond like carbon film of same structure composition.In addition, utilize traditional RF radio frequency plasma deposition method can obtain the characteristics of the DLC diamond like carbon film structure of compact structure, on the basis that porous surface DLC diamond like carbon film bottom forms, can invade by atomic diffusion and atom effectively established transition DLC diamond like carbon film bottom is carried out structural adjustment, and continue to form the porous surface DLC diamond like carbon film of compact structure on this basis, increase the wear resistance of film.
7, the normal temperature deposition method of the discontinuous surperficial diamond like carbon film material of the utility model high interfacial bonding strength porous is that condition has been created in the industrialization of DLC diamond like carbon film material, because the boundary strength problem can not practical application provide a kind of solution, this method has all obtained good effect on substrate surfaces such as Ti and Ti-6Al-4V, S45C, SUJ2, SKH51 tool steel for for a long time.
Description of drawings
Fig. 1 the utility model DC-RF composite anode CVD chemical vapor depsotition equipment structural representation;
Fig. 2 tungsten filament coil anode 4-2 structure diagram;
Fig. 3 is the I portion structure for amplifying synoptic diagram of Fig. 2;
Number in the figure 1 is the bellows-type riser, 2 is grounding switch, 3 is the sediment chamber, and 4 is composite anode, and 4-1 is the dull and stereotyped anode (dull and stereotyped anode) in plane, 4-2 is the tungsten filament coil anode, 5 is base material, and 6 is the negative electrode Stage microscope, and 7 for cutting off switch, 8 are DC direct current plasma generation source, 9 for the source takes place in the RF radio frequency plasma, and 10 is RF radio frequency source impedance matching box, and 11 is direct supply, 12 is insulation covering, 13 is the unstripped gas origin system, and 14 is lead, and 15 is vacuum extractor, 16 is insulation covering (vitrified pipe), and 17 is triangle tapered point groove.
Embodiment
Following examples only in order to further specify the utility model, do not limit content of the present utility model.
Embodiment one:
Referring to Fig. 1-Fig. 3, the utility model normal temperature depositing device contains sediment chamber 3, is communicated with unstripped gas intake ducting 13 and vacuum extractor 15 with sediment chamber 3.3 inner bottom parts are provided with negative electrode Stage microscope 6 in the sediment chamber, and base material 5 is positioned on the negative electrode Stage microscope 6, and negative electrode Stage microscope 6 is connected with the negative pole of plasma generating source.In the present embodiment, plasma generating source comprises two portions, and a part is that source 8 takes place the DC direct current plasma, and another part is an alternation plasma generating source 9, for example adopts the RF radio frequency plasma that the source takes place.The positive pole of two plasma generating sources is connected with sediment chamber's 3 shells, and the negative electrode that the source takes place two ions is connected with negative electrode 6 by isolator 7 respectively.The source can also take place or for high frequency plasma the source takes place or is microwave plasma generation source for the DC pulse plasma in described alternation plasma generating source, and other alternation plasma generating sources.
3 upper inside are provided with composite anode 4 in the sediment chamber, this composite anode 4 comprises the tungsten filament coil anode 4-2 of a dull and stereotyped anode 4-1 and a most advanced and sophisticated groove 17 of band triangle acute angle, so that formation highfield, its middle plateform anode 4-1 is positioned at tungsten filament coil anode 4-2 upside, and dull and stereotyped anode 4-1 all is connected with the plasma generating source anode with tungsten filament coil anode 4-2.In fact, composite anode 4 is electrically connected with sediment chamber's 3 shells, and sediment chamber's 3 shells are connected with ground wire.Upside in sediment chamber 3 also is equipped with a riser 1 that is used to adjust distance between composite anode 4 and the negative electrode 6, this riser adopts bellows-type riser 1, thereby makes composite anode 4 move up and down the distance of adjusting between composite anode 4 and the negative electrode 6 by adjusting riser 1; Insulate by vitrified pipe 16 between described dull and stereotyped anode 4-1 and the refractory metal wire coil anode 4-2, directly conducting.
When alternating electric field deposition DLC thin-film material, described tungsten filament coil anode 4-2 provides the thermal ionization field as hot filament, and does not have substrate 5 heating systems for 6 times at the negative electrode Stage microscope.As seen tungsten filament coil anode 4-2 plays two effects in this equipment, and the one, be used for heating, utilize the high temperature (1800-2400 ℃) on hot tungsten filament surface, produce highdensity plasma body, increase depositing of thin film speed.Be the highfield that utilizes triangle acute angle tip on the tungsten filament coil electrode in addition, form the high-density current of local point discharge, form the hole of certain density on bottom DLC diamond like carbon film surface, hole density and diameter can be adjusted by adjusting interelectrode distance and power supply power input.Concrete structure is that the two ends of tungsten filament coil anode 4-2 are connected with the two ends of a direct supply that is used to heat 11 respectively, are fixed together by insulation covering 12 between the two ends lead 14 of tungsten filament coil anode 4-2 and the sediment chamber 3.And the supply lead of this tungsten filament coil anode 4-2 is equipped with on the output terminal of the described direct supply that is used to heat 11 and cuts off switch 7 by a grounding switch 2 and sediment chamber's shell 3 break-makes.This grounding switch 2 is used for selecting tungsten filament coil anode 4-2 is communicated with direct supply 11 two ends, perhaps is communicated with the positive pole (being sediment chamber's shell) of plasma generating source.
About composite anode 4, the change aspect electrode geometry stands good, for example combined electrode of being constituted of cylindrical anode and cylindrical tungsten filament coil electrode etc.
Claims (8)
1. the normal temperature depositing device of a high interfacial strength diamond like carbon film material, contain the sediment chamber, be communicated with unstripped gas intake ducting and vacuum extractor with the sediment chamber, be provided with the negative electrode Stage microscope that is connected with the plasma generating source negative pole at sediment chamber's inner bottom part, be provided with and the anodal anode that is connected of plasma generating source at the deposition chamber interior upside, wherein anode is electrically connected with the sediment chamber, the sediment chamber is connected with ground wire, and heat filament device, it is characterized in that: described anode is a composite anode, this composite anode comprises a dull and stereotyped anode and a refractory metal wire coil anode, its middle plateform anode is positioned at refractory metal wire coil anode upside, and dull and stereotyped anode all is connected with the plasma generating source anode with refractory metal wire coil anode; Described plasma generating source is that source and an alternation plasma generating source take place a DC direct current plasma, and the anode of two plasma generating sources is connected with sediment chamber's shell, and the negative electrode of two plasma generating sources is connected with negative electrode by cutting off switch respectively.
2. normal temperature depositing device according to claim 1 is characterized in that: on described refractory metal silk surface, certain distance offers the triangular notch of band acute angle at interval, and the point of this acute angle is not less than the par, constitutes the point discharge point.
3. normal temperature depositing device according to claim 1 and 2 is characterized in that: described refractory metal wire coil anode is the tungsten filament coil anode, perhaps is molybdenum filament coil anode, perhaps is tantalum wire coil anode.
4. normal temperature depositing device according to claim 1, it is characterized in that: described heat filament device comprises refractory metal wire coil, the direct supply that is used to heat and ground connection switch on and off, the two ends of this refractory metal wire coil are connected with the positive and negative electrode of the direct supply that is used to heat respectively, and the supply lead of this refractory metal wire coil is communicated with sediment chamber's shell by a grounding switch, and the partition switch is installed on the output terminal of the direct supply that is used to heat simultaneously.
5. normal temperature depositing device according to claim 1 is characterized in that: described alternation plasma generating source is that the source takes place the RF radio frequency plasma, perhaps for the DC pulse plasma source takes place or for high frequency plasma generation source or be microwave plasma generation source.
6. normal temperature depositing device according to claim 1 is characterized in that: insulated by vitrified pipe between described dull and stereotyped anode and the refractory metal wire coil anode, directly conducting; Upside in the sediment chamber also is equipped with a riser that is used to adjust distance between composite anode and the negative electrode, thereby makes composite anode move up and down the distance of adjusting between composite anode and the negative electrode by adjusting riser.
7. normal temperature depositing device according to claim 1 is characterized in that: described composite anode, its dull and stereotyped anode and refractory metal wire coil anodic electrode surface shape are complementary, and are circle or polygonized structure.
8. normal temperature depositing device according to claim 1 is characterized in that: vacuum extractor adopts the two-stage vacuum system, and main vacuum pump adopts molecular pump or diffusion pump, and secondary pump adopts rotary-vane vaccum pump.
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| CN2010206733272U CN201962349U (en) | 2010-12-22 | 2010-12-22 | Normal temperature deposition equipment for high boundary strength diamond film material |
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| CN2010206733272U CN201962349U (en) | 2010-12-22 | 2010-12-22 | Normal temperature deposition equipment for high boundary strength diamond film material |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011102A (en) * | 2010-12-22 | 2011-04-13 | 郑锦华 | Normal-temperature deposition equipment for high-interfacial strength diamond film materials and method thereof |
| CN103695865A (en) * | 2013-12-13 | 2014-04-02 | 北京科技大学 | TM021 modal high-power microwave plasma diamond film deposition device |
| CN105611711A (en) * | 2015-12-24 | 2016-05-25 | 河南理工大学 | Gas-liquid two-phase plasma generating device for polymer surface modification |
| CN105671516A (en) * | 2016-03-31 | 2016-06-15 | 成都西沃克真空科技有限公司 | Dual-channel diamond-like carbon film deposition device |
| CN109750291A (en) * | 2017-11-07 | 2019-05-14 | 深圳先进技术研究院 | A kind of boron-doped diamond electrode and preparation method thereof |
| CN109898069A (en) * | 2019-04-22 | 2019-06-18 | 西安工业大学 | A kind of device and method of the depositing diamond-like film in metal micro-holes |
| CN110396674A (en) * | 2019-07-22 | 2019-11-01 | 上海妙壳新材料科技有限公司 | A kind of heat wire method cvd diamond transition zone sputtering equipment and its application method |
| CN114735625A (en) * | 2022-04-13 | 2022-07-12 | 浙江大学杭州国际科创中心 | Inert substance implantation equipment for processing amorphous carbon film |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011102A (en) * | 2010-12-22 | 2011-04-13 | 郑锦华 | Normal-temperature deposition equipment for high-interfacial strength diamond film materials and method thereof |
| CN103695865A (en) * | 2013-12-13 | 2014-04-02 | 北京科技大学 | TM021 modal high-power microwave plasma diamond film deposition device |
| CN103695865B (en) * | 2013-12-13 | 2016-06-08 | 河北普莱斯曼金刚石科技有限公司 | TM021The high power microwave plasma diamond film deposition device of pattern |
| CN105611711A (en) * | 2015-12-24 | 2016-05-25 | 河南理工大学 | Gas-liquid two-phase plasma generating device for polymer surface modification |
| CN105611711B (en) * | 2015-12-24 | 2017-10-20 | 河南理工大学 | A kind of polymer surface modification gas-liquid two-phase plasma generating device |
| CN105671516A (en) * | 2016-03-31 | 2016-06-15 | 成都西沃克真空科技有限公司 | Dual-channel diamond-like carbon film deposition device |
| CN109750291A (en) * | 2017-11-07 | 2019-05-14 | 深圳先进技术研究院 | A kind of boron-doped diamond electrode and preparation method thereof |
| CN109898069A (en) * | 2019-04-22 | 2019-06-18 | 西安工业大学 | A kind of device and method of the depositing diamond-like film in metal micro-holes |
| CN110396674A (en) * | 2019-07-22 | 2019-11-01 | 上海妙壳新材料科技有限公司 | A kind of heat wire method cvd diamond transition zone sputtering equipment and its application method |
| CN114735625A (en) * | 2022-04-13 | 2022-07-12 | 浙江大学杭州国际科创中心 | Inert substance implantation equipment for processing amorphous carbon film |
| CN114735625B (en) * | 2022-04-13 | 2024-04-05 | 浙江大学杭州国际科创中心 | Inert substance implantation equipment for amorphous carbon film processing |
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