CN201956332U - Turnover mould device for installing spacing sheet of thyristor anode - Google Patents
Turnover mould device for installing spacing sheet of thyristor anode Download PDFInfo
- Publication number
- CN201956332U CN201956332U CN2011200013342U CN201120001334U CN201956332U CN 201956332 U CN201956332 U CN 201956332U CN 2011200013342 U CN2011200013342 U CN 2011200013342U CN 201120001334 U CN201120001334 U CN 201120001334U CN 201956332 U CN201956332 U CN 201956332U
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- China
- Prior art keywords
- angle block
- mould
- right angle
- height
- patrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a turnover mould device for installing a spacing sheet of a thyristor anode. The turnover mould device comprises an upper mould and a lower mould, two sides of the upper mould and two sides of the lower mould are respectively connected through a twisting mechanism, and each twisting mechanism comprises two right-angle blocks, namely a first right-angle block and a second right-angle block, wherein each first right-angle block is fixed on the side face of the lower mould, each second right-angle block is fixed on the side face of the upper mould and connecting ends of the two corresponding right-angle blocks are articulated; a height positioning and controlling ejector pin is arranged on each position on the upper mould corresponding to each chip and is located in positioning holes in the upper mould. By means of the reformation in the utility model, the device for installing the spacing sheet of the thyristor anode can be used for effectively positioning the height of chips, ensuring height consistence of soldering flux, reducing ohmic contact and improving device reliability, has high positioning precision by utilizing the twisting mechanisms for turnover and positioning, so that the labor efficiency can be improved.
Description
Technical field
The utility model relates to the semi-conductor discrete device sealed in unit, particularly to the sealed in unit of the device of thyratron transistor band spacer.
Background technology
Existing thyratron transistor anode is installed the spacer device, employing be the vertical pressing of upper and lower mould, counterdie can not fixed chip, patrix can not overturn, and takes direct press type, the gallery device of my company can fixed chip, patrix is convertible.
The utility model content
The purpose of this utility model provides a kind of upset die device of thyratron transistor anode installation spacer of overturn structure, and it is low to solve the mold position of vertical compression structure up and down inaccuracy, efficient commonly used, and the nonadjustable problem of the thickness of anode spacer.
The purpose of this utility model is to be achieved through the following technical solutions:
The thyratron transistor anode is installed the upset die device of spacer, comprise upper die and lower die, patrix is connected by a torsional device respectively with the both sides of counterdie, described torsional device comprises two right angle block, be respectively first right angle block and second right angle block, first right angle block is fixed on the side of counterdie, and second right angle block is fixed on the side of patrix, and the link of two right angle block is hinged; There is a height positioning control thimble position of corresponding each chip on patrix, described height positioning control thimble is positioned at the location hole of patrix, and height positioning control thimble is by being threaded in being threaded in the location hole, the top of each height positioning control thimble has the hexagon socket head cap screw hole, can regulate the degree of depth of height positioning control thimble in location hole by the hexagon socket head cap screw hole, and then regulate the location height of chip.
Can make the thyratron transistor anode that the device of spacer is installed by transformation of the present utility model, effectively the positioning chip height makes the bead height unanimity, reduce ohmic contact, device reliability is improved, and utilize torsional device upset location, the positioning accuracy height can be raised labour efficiency.
Description of drawings
With embodiment the utility model is described in further detail with reference to the accompanying drawings below.
Fig. 1 is the front view that the described thyratron transistor anode of the utility model embodiment is installed the upset die device of spacer;
Fig. 2 is the end view that the thyratron transistor anode is installed the upset die device of spacer;
Fig. 3 is the structure chart of patrix;
Fig. 4 is the naked mould view of counterdie;
Fig. 5 is the counterdie view that substrate has been installed;
Fig. 6 is the counterdie view that chip has been installed.
Embodiment
Shown in Fig. 1-6, the thyratron transistor anode is installed the upset die device of spacer, comprise patrix 1 and counterdie 2, patrix 1 is connected by a torsional device 3 respectively with the both sides of counterdie 2, described torsional device 3 comprises two right angle block, is respectively the side that first right angle block 4 and second right angle block, 5, the first right angle block 4 are fixed on counterdie 2, second right angle block 5 is fixed on the side of patrix 1, and the link of two right angle block is hinged; There is a height positioning control thimble 6 position of corresponding each chip on patrix 1, described height positioning control thimble 6 is positioned at the location hole 7 of patrix 1, and height positioning control thimble 6 is by being threaded in being threaded in the location hole 7, the top of each height positioning control thimble 6 has the hexagon socket head cap screw hole, can regulate the degree of depth of height positioning control thimble in location hole 7 by the hexagon socket head cap screw hole, and then regulate the location height of chip.
Can make the thyratron transistor anode that the device of spacer is installed by transformation of the present utility model, effectively the positioning chip height makes the bead height unanimity, reduce ohmic contact, device reliability is improved, and utilize torsional device upset location, the positioning accuracy height can be raised labour efficiency.
Claims (3)
1. the thyratron transistor anode is installed the upset die device of spacer, comprises upper die and lower die, it is characterized in that patrix is connected by a torsional device respectively with the both sides of counterdie.
2. thyratron transistor anode according to claim 1 is installed the upset die device of spacer, it is characterized in that, described torsional device comprises two right angle block, be respectively first right angle block and second right angle block, first right angle block is fixed on the side of counterdie, second right angle block is fixed on the side of patrix, and the link of two right angle block is hinged.
3. thyratron transistor anode according to claim 1 is installed the upset die device of spacer, it is characterized in that, there is a height positioning control thimble position of corresponding each chip on patrix, described height positioning control thimble is positioned at the location hole of patrix, and height positioning control thimble is by being threaded in being threaded in the location hole, and the top of each height positioning control thimble has the hexagon socket head cap screw hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200013342U CN201956332U (en) | 2011-01-05 | 2011-01-05 | Turnover mould device for installing spacing sheet of thyristor anode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200013342U CN201956332U (en) | 2011-01-05 | 2011-01-05 | Turnover mould device for installing spacing sheet of thyristor anode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201956332U true CN201956332U (en) | 2011-08-31 |
Family
ID=44500434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200013342U Expired - Fee Related CN201956332U (en) | 2011-01-05 | 2011-01-05 | Turnover mould device for installing spacing sheet of thyristor anode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201956332U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117754A (en) * | 2011-01-05 | 2011-07-06 | 无锡市玉祁红光电子有限公司 | Overturning mould device for installing insulating spacer on thyristor anode |
-
2011
- 2011-01-05 CN CN2011200013342U patent/CN201956332U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117754A (en) * | 2011-01-05 | 2011-07-06 | 无锡市玉祁红光电子有限公司 | Overturning mould device for installing insulating spacer on thyristor anode |
| CN102117754B (en) * | 2011-01-05 | 2016-05-18 | 无锡市玉祁红光电子有限公司 | The turnover mould device of installing spacing sheet of thyristor anode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110831 Termination date: 20150105 |
|
| EXPY | Termination of patent right or utility model |