CN201944605U - LED (light-emitting diode) bulb formed by P-N junction 4 pai light extraction high-voltage LED - Google Patents
LED (light-emitting diode) bulb formed by P-N junction 4 pai light extraction high-voltage LED Download PDFInfo
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- CN201944605U CN201944605U CN2010206852040U CN201020685204U CN201944605U CN 201944605 U CN201944605 U CN 201944605U CN 2010206852040 U CN2010206852040 U CN 2010206852040U CN 201020685204 U CN201020685204 U CN 201020685204U CN 201944605 U CN201944605 U CN 201944605U
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- 238000007639 printing Methods 0.000 claims description 10
- 229910002114 biscuit porcelain Inorganic materials 0.000 claims description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
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- 238000010586 diagram Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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Abstract
The utility model relates to a high-efficient LED (light-emitting diode) bulb, which is formed by a high-voltage LED, wherein the high-voltage LED comprises a transparent substrate, electrical leading out wires are arranged at two ends of the transparent substrate, at least one string of high-voltage LED chips are mounted on the transparent substrate, each high-voltage LED chip comprises at least two LED P-N junctions connected in series, and at least one electrical connecting wire is arranged between the adjacent P-N junctions; at least one metal electrode for welding and wire bonding is arranged at each of two ends of each high-voltage LED chip respectively; at least one connecting wire is arranged between the LED chips and between the high-voltage LED chips and the high-voltage LED electrical leading out wires respectively; the LED bulb comprises a light-transmitting bulb housing, a core column with an exhaust pipe, the electrical leading out wires and a support, at least one high-voltage LED, a driver and an electrical connector, wherein the high-voltage LEDs are fixed on the core column, and the electrodes are connected with the electrical connector which can be connected with an external power supply via the leading out wires of the electrodes of the core column; the core column and the light-transmitting bulb housing are vacuum sealed, and low-viscosity gas with high heat conductivity is filled in a sealed cavity; and the high-efficient LED bulb has the characteristics of high efficiency of the whole bulb, high reliability, low cost, long service life and the like.
Description
Technical field
The utility model relates to a kind of LED and LED bulb thereof, particularly a kind of P-N ties the high-voltage LED and the high efficiency LED bulb thereof of 4 π bright dippings, is used for illumination.
Background technology
In the prior art, the bulb-shaped LED lamp of alternative incandescent lamp and energy-saving fluorescent lamp, mainly contain two kinds: the one, constitute with several power-type LEDs, another kind is made of tens or more a plurality of low-power LED connection in series-parallel.The former is that driving voltage is the low-voltage, high-current device of several-tens V, and cell-shell shape LED lamp in the market belongs to this class mostly; Because its driving voltage is far below the electric main of 110-230V, the efficient of the driver of high pressure commentaries on classics low pressure is low, cost is high, volume is big, the life-span is difficult to and LED itself is complementary.The latter's driving voltage near outer exchange civil power, the efficient height of driver, cost is low, the life-span is long, but a large amount of series-parallel poor reliability of low-power LED, the chip of a large amount of single P-N knots is packaged into single LED lamp pearl earlier, connection in series-parallel becomes LED to put in order lamp then, operation is many, cost is high, volume is big, connecting line is many, poor reliability, each P-N knot all has two sizable opaque metal electrodes of area that are used for the routing welding, and the light emission rate of P-N knot is low.
In order to overcome the deficiency of above-mentioned second kind of lamp, a kind of high-voltage LED of ACLED that is called is in development.It is that a plurality of LED P-N knot is connected into several strings, connects into the LED that is similar to rectification circuit then on a chip; It can directly use alternating current work, and drive circuit is simple.But because each P-N knot works in exchange status, luminous efficiency is low; Simultaneously, the described chip that has high pressure also must be exposed to the close thermally coupled of airborne metal heat sink with needs, and is dangerous.
In order to overcome the low shortcoming of described ACLED luminous efficiency, there is the people that above-mentioned ACLED is made into high pressure DCLED, outer alternating current is through rectifying and wave-filtering rear drive high pressure DCLED, and luminous efficiency obviously improves.But above-mentioned safety issue still exists.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and provides a kind of P-N knot light emission rate height, luminous efficiency height, reliability height, low, the safe P-N of cost to tie the high-voltage LED of 4 π bright dippings and the high efficiency LED bulb made from it.
The purpose of this utility model is finished by following technical solution, it includes a printing opacity cell-shell, a stem stem that has blast pipe, electric lead-out wire and support, at least one LED, a driver, an electric connector, described LED constitutes for the high-voltage LED chip, this high-voltage LED chip is fixed on the stem stem, and its electrode links to each other with the electric connector that can be connected external power with driver through the electrode outlet line of stem stem; In the printing opacity cell-shell that is filled with high thermal conductivity low viscosity gas, the heat that produces when described LED works dissipates by the heat conduction of described gas with to the cell-shell of flowing through described stem stem by vacuum seal.
Described high-voltage LED chip includes a transparency carrier, two ends of transparency carrier have been provided with electric lead-out wire, at least a string high-voltage LED chip is installed on described transparency carrier, each high-voltage LED chip includes the LED P-N knot of at least two series connection, between each P-N knot at least one electric connection line is arranged, described electric connection line is finished in chip manufacturing proces, increase chip cost hardly, the reliability height, and need not the large tracts of land opaque metal electrode that each P-N knot all has routing welding usefulness, improved the light extraction efficiency of P-N knot, add that the substrate that chip is installed is transparent, around the chip nearly all is transparent light-emitting window, and promptly P-N ties 4 π bright dippings, and light extraction efficiency is very high; Two ends of each high-voltage LED chip respectively have at least one to be used to weld the metal electrode of routing; Between each high-voltage LED chip and between high-voltage LED chip and the high-voltage LED electricity lead-out wire at least one connecting line is arranged.
Described transparency carrier is made by simple glass, Bohemian glass, quartz glass, pottery or plastics; For improving the reliability of the electrical connection between each P-N knot, between each P-N knot of described high-voltage LED chip two electric connection lines are arranged; Between described each high-voltage LED chip and between high-voltage LED chip and the high-voltage LED electricity lead-out wire two connecting lines are arranged, to improve the reliability that is electrically connected.
Described electric lead-out wire is fixed on the end of transparency carrier with ceramic glue, low-melting glass, high temperature plastics or silver slurry; Described high-voltage LED chip or high-voltage LED are identical or different illuminant colour; Described high-voltage LED chip is connected to unidirectional DC work or two-way AC work.
Handlebar high-voltage LED chip issued light is transformed into the luminous bisque of other required photochromic light around described high-voltage LED chip and the transparency carrier.Described luminous bisque has transparent dielectric layer outward.
The utility model compared with prior art has LED P-N knot and need not welding and tie 4 π bright dippings, light emission rate height, luminous efficiency height with large tracts of land opaque electrode, P-N; Several LED P-N knots are connected on the chip, do not need single led P-N knot is packaged into single led lamp pearl earlier, then the connection in series-parallel of a large amount of LED lamp pearl is welded on the PCB, make whole lamp again, and sealing wire is few between the chip, reliability is high, and cost is low; Each high-voltage LED is sealed in advantages such as cell-shell is interior, safe and reliable.Be used for illumination.
Description of drawings
Fig. 1 ties the LED bulb structure schematic diagram of the high-voltage LED preparation of 4 π bright dippings with P-N for the utility model.
Fig. 2 ties the high-voltage LED structural representation of 4 π bright dippings for P-N described in the utility model.
Fig. 3 is the A-A cross-sectional schematic among Fig. 2.
Fig. 4 is the another cross-sectional schematic of the A-A among Fig. 2.
Label shown in the figure has: 1, printing opacity cell-shell; 2, blast pipe; 3, electrode outlet line; 4, pillar; 5, stem stem; 6, high-voltage LED; 7, driver; 8, electric connector; 9, LED bulb; 10, the fixing wire of using; 11, lead-in wire; 12, vacuum seal cavity; 13, transparency carrier; 14, high-voltage LED chip; 15, LED P-N knot; 16, the electric connection line between the LED P-N knot; 17, the electrode electrically connected of high-voltage LED chip two ends; 18, between the high-voltage LED chip and and the high-voltage LED lead-out wire between connecting line; 19, the electric lead-out wire of high-voltage LED; The weld of 19a, high-voltage LED electricity lead-out wire; 20, the fixture of the electric lead-out wire of high-voltage LED; 21, transparent adhesive tape; 22, emergent light; 23, luminous bisque; 24, transparent dielectric layer.
The specific embodiment
Below in conjunction with accompanying drawing the utility model is described in detail.Fig. 1 is the structural representation of tying an embodiment of the high efficiency LED bulb that the high-voltage LED of 4 π bright dippings constitutes with P-N of the present utility model.Described high efficiency LED bulb includes the stem stem 5 that 1, one of a printing opacity cell-shell has blast pipe 2, electrode outlet line 3 and support 4, and at least one P-N ties 7, one electric connectors 8 of 6, one drivers of high-voltage LED of 4 π bright dippings; Described printing opacity cell-shell 1, stem stem 5, high-voltage LED 6, driver 7 and electric connector 8 are interconnected to a whole lamp 9.Described high-voltage LED 6 is fixed on the stem stem 5 by the fixing metal line 10 on the electric lead-out wire 3 of stem stem and the pillar, its electrode links to each other with electric connector 8 through electric lead-out wire 3, driver 7, the connecting line 11 of stem stem, to connect external power, connect external power, can light high-voltage LED 6; Printing opacity cell-shell 1 and stem stem 5 vacuum seals constitute a vacuum-packed cavity 12, are filled with high thermal conductivity low viscosity gas in the described cavity 12, and the heat that produces in the time of can working high-voltage LED 6 dissipates through cell-shell 1 through the heat conduction and the convection current of described gas again.
High thermal conductivity low viscosity gas in the described vacuum seal cavity 12 for example is helium, hydrogen or helium hydrogen gaseous mixture.
Described at least one high-voltage LED 6 can connect into two-way AC work or unidirectional DC work.Figure 1 shows that two LED 6, constitute the example that unidirectional DC works.
Described high-voltage LED chip 14 or high-voltage LED 6 are identical or different illuminant colour.
Described printing opacity cell-shell 1 is for transparent or for milky white, frosted, coloured or cell-shell have the cell-shell of one deck diffuse transmission membrane outward, and also can be part has the reflecting layer, or the cell-shell of a series of little prisms, lenslet is partly arranged.
The shape of described printing opacity cell-shell 1 can be a kind of in the cell-shell of A-type, G-type, R-type, PAR-type, T-type, candle type or other existing bulb, Figure 1 shows that the example of candle cell-shell.
A kind of in the electric connector that described electric connector 8 is existing bulbs such as E40, E27, E26, E14, GU is to be adapted to be mounted within on different lamp sockets or the light fixture.Figure 1 shows that the example of E type lamp holder.
Fig. 2 ties the structural representation of an embodiment of the high-voltage LED 6 of 4 π bright dippings for P-N of the present utility model.As shown in Figure 2, described high-voltage LED 6 comprises a transparency carrier 13, and high-voltage LED chip 14 a string at least, series connection is arranged on the transparency carrier 13, Figure 2 shows that the example of a string high-voltage LED chip 14; Each high-voltage LED chip 14 has at least two P-N knots 15, Figure 2 shows that the example of 5 P-N knots.Between each P-N knot at least one electric connection line 16 is arranged, Figure 2 shows that the example of two electric connection lines 16.Two ends of each high-voltage LED chip 14 have an electrode 17 that is used to weld routing at least, Figure 2 shows that the example that two electrodes 17 are respectively arranged.18 be between each high-voltage LED chip 14 and and the electric lead-out wire 19 of transparency carrier 13 2 ends between connecting line.The electric lead-out wire 19 of described transparency carrier 13 2 ends is fixed on transparency carrier 13 ends with high-temp glue, ceramic glue, low-melting glass, silver slurry or high temperature plastics 20 etc., and its end 19a towards high-voltage LED chip 14 is exposed for the spot welding of chip lead-out wire.
Fig. 3 and Fig. 4 are the schematic diagram of two kinds of different structures of the A-A section of Fig. 2.13 is transparency carrier among Fig. 3, and 14 is the high-voltage LED chip, and it is fixed on the transparency carrier 13 with transparent adhesive tape 21, and the 4 π bright dippings of high-voltage LED chip 14 issued lights shown among Fig. 3 22, the light emission rate height, are the luminous efficiency height.When led chip is blue light-emitting or ultraviolet light, and need be converted into light time of white light or other required look with luminescent powder, around described transparency carrier 13 and the high-voltage LED chip 14 luminous bisque 23 is arranged, the used transparent adhesive tape of luminous bisque for example is silica gel, UV glue or epoxy resin etc.
Fig. 4 is the schematic diagram of another structure of the A-A section of Fig. 2.It is characterized in that luminous bisque 23 outer layer of transparent dielectric layers 24 in addition.Described transparent medium for example is silica gel, UV glue or epoxy resin etc.Identical among Fig. 4 among the meaning of other digital representative and Fig. 3.
Each embodiment that the claimed scope of the utility model is not limited to introduce herein, all belongs to the scope that this patent is contained at all various forms of conversion of doing based on the utility model claim and description and replacement.
Claims (6)
1. a P-N ties the LED bulb that the high-voltage LED of 4 π bright dippings constitutes, it includes a printing opacity cell-shell, a stem stem that has blast pipe, electric lead-out wire and support, at least one LED, a driver, an electric connector is characterized in that described LED is high-voltage LED (6), this high-voltage LED (6) is fixed on the stem stem (5), and its electrode links to each other with the electric connector that can be connected external power (8) with driver (7) through the electrode outlet line (3) of stem stem; Described stem stem (5) and printing opacity cell-shell (1) vacuum seal are filled with high thermal conductivity low viscosity gas in the annular seal space.
2. tie the LED bulb of the high-voltage LED formation of 4 π bright dippings according to the described P-N of claim 1, it is characterized in that described high-voltage LED includes a transparency carrier (13), two ends of transparency carrier (13) are provided with electric lead-out wire (19), at least a string high-voltage LED chip (14) is installed on described transparency carrier (13), each high-voltage LED chip (14) includes the LED P-N knot (15) of at least two series connection, between each P-N knot at least one electric connection line (16) is arranged; Two ends of each high-voltage LED chip (14) respectively have at least one metal electrode that is used to weld routing (17); Between each high-voltage LED chip (14) and between high-voltage LED chip (14) and the high-voltage LED electricity lead-out wire (19) at least one connecting line (18) is arranged.
3. P-N according to claim 2 ties the LED bulb that the high-voltage LED of 4 π bright dippings constitutes, and it is characterized in that described transparency carrier (13) made by simple glass, Bohemian glass, quartz glass, pottery or plastics; Between each P-N knot (15) of described high-voltage LED chip (14) two electric connection lines (16) are arranged; Between described each high-voltage LED chip (14) and between high-voltage LED chip (14) and the high-voltage LED electricity lead-out wire (19) two connecting lines (18) are arranged.
4. tie the LED bulb that the high-voltage LED of 4 π bright dippings constitutes according to claim 2 or 3 described P-N, it is characterized in that described electric lead-out wire (19) ceramic glue, low-melting glass, high temperature plastics or silver starches the end that is fixed on transparency carrier (13); Described high-voltage LED chip (14) or high-voltage LED (6) are identical or different illuminant colour; Described high-voltage LED (6) is connected to unidirectional DC work or two-way AC work.
5. P-N according to claim 4 ties the LED bulb that the high-voltage LED of 4 π bright dippings constitutes, it is characterized in that described high-voltage LED chip (14) and transparency carrier (13) all around handlebar high-voltage LED chip issued light be transformed into the luminous bisque (23) of other required photochromic light.
6. P-N according to claim 5 ties the LED bulb of the high-voltage LED formation of 4 π bright dippings, and it is characterized in that has transparent dielectric layer (24) outside the described luminous bisque (23).
Priority Applications (20)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206852040U CN201944605U (en) | 2010-12-29 | 2010-12-29 | LED (light-emitting diode) bulb formed by P-N junction 4 pai light extraction high-voltage LED |
| PCT/CN2011/079234 WO2012031533A1 (en) | 2010-09-08 | 2011-09-01 | Led lamp bulb and led lighting bar capable of emitting light over 4π |
| BR112013005707-6A BR112013005707B1 (en) | 2010-09-08 | 2011-09-01 | LED LAMP |
| EP11823056.4A EP2535640B2 (en) | 2010-09-08 | 2011-09-01 | Led lamp bulb and led lighting bar capable of emitting light over 4 pi |
| KR1020137008659A KR101510462B1 (en) | 2010-09-08 | 2011-09-01 | ＬＥＤ lamp bulb and ＬＥＤ lighting bar capable of emitting light over 4Π |
| DE202011110805.1U DE202011110805U1 (en) | 2010-09-08 | 2011-09-01 | LED BULB |
| MYPI2013700358A MY163977A (en) | 2010-09-08 | 2011-09-01 | LED Light Bulb and LED Light-Emitting Strip Being Capable of Emitting 4π Light |
| ES11823056T ES2531050T5 (en) | 2010-09-08 | 2011-09-01 | LED bulb and LED light bar capable of emitting light above 4 PI |
| RU2013114922/12A RU2546469C2 (en) | 2010-09-08 | 2011-09-01 | Led lamp |
| PT118230564T PT2535640E (en) | 2010-09-08 | 2011-09-01 | Led lamp bulb and led lighting bar capable of emitting light over 4 pi |
| CA2810658A CA2810658C (en) | 2010-09-08 | 2011-09-01 | Led light bulb and led light-emitting strip being capable of emitting 4.pi. light |
| JP2013500328A JP5689524B2 (en) | 2010-09-08 | 2011-09-01 | LED bulb and LED light emitting strip capable of 4π light emission |
| PL11823056T PL2535640T5 (en) | 2010-09-08 | 2011-09-01 | Led lamp bulb and led lighting bar capable of emitting light over 4 pi |
| DK11823056.4T DK2535640T4 (en) | 2010-09-08 | 2011-09-01 | LED bulb and LED lighting strip for emitting light over 4 PI |
| AU2011300999A AU2011300999B2 (en) | 2010-09-08 | 2011-09-01 | LED lamp bulb and LED lighting bar capable of emitting light over 4pi |
| SG2013017678A SG188483A1 (en) | 2010-09-08 | 2011-09-01 | Led light bulb and led light-emitting strip being capable of emitting 4pi light |
| TW100135326A TWI470164B (en) | 2010-11-22 | 2011-09-29 | LED bulbs and can be 4π out of the LED light bar |
| US13/408,936 US9261242B2 (en) | 2010-09-08 | 2012-02-29 | LED light bulb and LED light-emitting strip being capable of emitting 4TT light |
| HK12113243.4A HK1174089A1 (en) | 2010-09-08 | 2012-12-21 | Led lamp bulb and led lighting bar capable of emitting light over 4 pi led 4 led |
| JP2014209442A JP2015053269A (en) | 2010-09-08 | 2014-10-10 | LED BULB AND LED LIGHT-EMITTING STRIP CAPABLE OF EFFECTING 4π LIGHT EMISSION |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206852040U CN201944605U (en) | 2010-12-29 | 2010-12-29 | LED (light-emitting diode) bulb formed by P-N junction 4 pai light extraction high-voltage LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201944605U true CN201944605U (en) | 2011-08-24 |
Family
ID=44471947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206852040U Expired - Lifetime CN201944605U (en) | 2010-09-08 | 2010-12-29 | LED (light-emitting diode) bulb formed by P-N junction 4 pai light extraction high-voltage LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201944605U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102109115A (en) * | 2010-12-29 | 2011-06-29 | 葛世潮 | P-N junction 4pi light emitting high-voltage light emitting diode (LED) and LED lamp bulb |
| WO2012031533A1 (en) * | 2010-09-08 | 2012-03-15 | 浙江锐迪生光电有限公司 | Led lamp bulb and led lighting bar capable of emitting light over 4π |
| CN104633509A (en) * | 2015-01-30 | 2015-05-20 | 木林森股份有限公司 | LED light bar based on glass substrate and production process thereof |
| CN104791639A (en) * | 2014-01-22 | 2015-07-22 | 江苏宏力光电科技有限公司 | 3D light-emitting white light LED lamp strip |
| EP2827046A4 (en) * | 2012-03-12 | 2015-09-30 | Zhejiang Ledison Optoelectronics Co Ltd | Led lighting column and led lamp using same |
| WO2017024434A1 (en) * | 2015-08-07 | 2017-02-16 | 深圳市裕富照明有限公司 | Gas-filled led light bulb |
-
2010
- 2010-12-29 CN CN2010206852040U patent/CN201944605U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012031533A1 (en) * | 2010-09-08 | 2012-03-15 | 浙江锐迪生光电有限公司 | Led lamp bulb and led lighting bar capable of emitting light over 4π |
| US9261242B2 (en) | 2010-09-08 | 2016-02-16 | Zhejiang Ledison Optoelectronics Co., Ltd. | LED light bulb and LED light-emitting strip being capable of emitting 4TT light |
| CN102109115A (en) * | 2010-12-29 | 2011-06-29 | 葛世潮 | P-N junction 4pi light emitting high-voltage light emitting diode (LED) and LED lamp bulb |
| CN102109115B (en) * | 2010-12-29 | 2012-08-15 | 浙江锐迪生光电有限公司 | P-N junction 4pi light emitting high-voltage light emitting diode (LED) and LED lamp bulb |
| EP2827046A4 (en) * | 2012-03-12 | 2015-09-30 | Zhejiang Ledison Optoelectronics Co Ltd | Led lighting column and led lamp using same |
| CN104791639A (en) * | 2014-01-22 | 2015-07-22 | 江苏宏力光电科技有限公司 | 3D light-emitting white light LED lamp strip |
| WO2015109888A1 (en) * | 2014-01-22 | 2015-07-30 | 江苏宏力光电科技有限公司 | Led light bar emitting three-dimensional white light |
| CN104633509A (en) * | 2015-01-30 | 2015-05-20 | 木林森股份有限公司 | LED light bar based on glass substrate and production process thereof |
| CN104633509B (en) * | 2015-01-30 | 2017-07-18 | 木林森股份有限公司 | A kind of LED light bar and its production technology based on glass substrate |
| WO2017024434A1 (en) * | 2015-08-07 | 2017-02-16 | 深圳市裕富照明有限公司 | Gas-filled led light bulb |
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Owner name: ZHEJIANG RUIDISHENG OPTOELECTRONIC CO., LTD. Free format text: FORMER OWNER: GE SHICHAO Effective date: 20110922 |
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