CN201904350U

CN201904350U - High-efficiency solar cell

Info

Publication number: CN201904350U
Application number: CN 201020630844
Authority: CN
Inventors: 张一熙; 刘吉人
Original assignee: Jifu New Energy Technology Shanghai Co Ltd
Current assignee: Jifu New Energy Technology Shanghai Co Ltd
Priority date: 2010-11-24
Filing date: 2010-11-24
Publication date: 2011-07-20
Anticipated expiration: 2020-11-24

Abstract

The utility model provides a high-efficiency solar cell which comprises a transparent substrate, an amorphous silicon layer and at least one III-V compound polycrystalline semiconductor layer, wherein the amorphous silicon layer is formed on the transparent substrate by an electric pulp auxiliary chemical vapor deposition method; and the III-V compound polycrystalline semiconductor layer is sequentially formed on the amorphous silicon layer by an metallic organic chemical vapor deposition method. In the high-efficiency solar cell, the transparent substrate is used for replacing a traditional III-V compound substrate, therefore, the cost can be reduced greatly, the area of the solar cell can be enlarged, the light absorbing area can be further enlarged, and the conversion efficiency can be improved.

Description

High efficiency solar cell

Technical field

The relevant a kind of solar battery structure of the utility model is meant a kind of high efficiency solar cell that uses three or five family's poly semiconductors especially.

Background technology

Because earth available resources are limited, for exempting from resource exhaustion, solar energy industry is arisen at the historic moment, and solar energy is a kind of continuous forever energy of environmental protection, and the exploitation solar cell utilizes so that luminous energy is stored.Solar cell sees through light quantity or the photon that absorbs in the semiconductor, thereby excitation electron makes it be enough to drive circuit.At present the various solar cell material that uses comprises the material of the element link of semiconductor species such as monocrystalline silicon, polysilicon, amorphous silicon or three or five families, two or six families.

Three or five family's solar cells are called the concentrating solar battery again, have the conversion efficiency far above the silicon wafer solar cell, and the pliability of hull cell is also arranged simultaneously.Three or five family's solar cells are with on three or five family's substrates, with chemical vapour deposition technique growth gallium arsenide film, made film solar battery structure, be applied in very early on the solar panel of artificial satellite, but it is extremely wide to have absorption spectrum ranges, conversion efficiency can exceed 30% by height, and the life-span is long than other kind solar cells, the advantage of stable in properties.Although three or five family's solar cells do not need to use silicon wafer, the wafer cost is still high relatively, is the problem that need overcome at present.

Therefore, the utility model promptly proposes a kind of high efficiency solar cell, and to overcome above-mentioned these a plurality of problems, concrete framework and execution mode thereof will be specified in down.

Summary of the invention

Main purpose of the present utility model is to provide a kind of high efficiency solar cell, and it uses transparency carrier to replace three or five family's substrates of prior art, can significantly reduce cost.

Another purpose of the present utility model is to provide a kind of high efficiency solar cell, and it uses inexpensive transparency carrier, therefore the area of solar cell can be increased, and then increases the extinction area, promotes conversion efficiency.

In order to achieve the above object, the utility model provides a kind of high efficiency solar cell, comprises a transparency carrier; One amorphous silicon layer utilizes the plasma enhanced chemical vapor deposition method to be formed on the transparency carrier; And at least one three or five family's polycrystal semiconductor layers, utilize Metalorganic Chemical Vapor Deposition to be formed on the amorphous silicon layer.

The utility model provides a kind of high efficiency solar cell, comprising:

One transparency carrier;

One amorphous silicon layer is formed on this transparency carrier; And

At least one three or five family's polycrystal semiconductor layers are formed on this amorphous silicon layer.

During enforcement, the material of this transparency carrier is glass, quartz, perspex or signle crystal alumina.

During enforcement, this amorphous silicon layer utilizes the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.

During enforcement, this three or five family polycrystal semiconductor layer utilizes Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.

During enforcement, the material of this three or five family polycrystal semiconductor layer is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.

During enforcement, when this three or five family polycrystal semiconductor layer is two-layer, comprise one first type semiconductor layer and one second type semiconductor layer.

During enforcement, when this first type semiconductor layer was P type poly semiconductor, this second type semiconductor layer was a N+ type poly semiconductor; Or this first type semiconductor layer is when being N+ type poly semiconductor, and this second type semiconductor layer is a P type poly semiconductor.

During enforcement, when this three or five family polycrystal semiconductor layer is three layers, comprise one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.

Compared with prior art, high efficiency solar cell described in the utility model, it uses transparency carrier to replace three or five family's substrates of prior art, can significantly reduce cost.

Under illustrate in detail by specific embodiment, when the effect that is easier to understand the purpose of this utility model, technology contents, characteristics and is reached.

Description of drawings

Fig. 1 is the cutaway view of an embodiment of the utility model high efficiency solar cell;

Fig. 2 is the cutaway view of another embodiment of the utility model high efficiency solar cell.

Description of reference numerals: 100,100 '-solar battery structure; The 10-transparency carrier; The 12-amorphous silicon layer; 14,14 '-3 5 family's semiconductor layer; 142-first type semiconductor layer; 144-second type semiconductor layer; 146-essence type semiconductor layer.

Embodiment

The utility model provides a kind of high efficiency solar cell, and this solar cell can be applicable to wall board for building, roof etc. and locates, and exposes to sunlight with absorption solar energy, and converts thereof into daily available electric energy.

Please refer to first figure, it is the schematic diagram of solar battery structure 100 of the present utility model, comprise a transparency carrier 10, an amorphous silicon layer 12 and at least one three or five family's polycrystal semiconductor layers 14, wherein amorphous silicon layer 12 utilizes plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor Deposition, PECVD) be formed on the transparency carrier 10, (Metal-organic Chemical Vapor Deposition MOCVD) is formed on the amorphous silicon layer 12 in regular turn and three or five family's polycrystal semiconductor layers 14 utilize Metalorganic Chemical Vapor Deposition.

The material of transparency carrier 10 is glass, quartz, perspex or signle crystal alumina; The material of three or five family's polycrystal semiconductor layers 14 is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.

When three or five family's polycrystal semiconductor layers 14 comprise shown in first figure when two-layer, it comprises one first type semiconductor layer 142 and one second type semiconductor layer 144, when wherein first type semiconductor layer 142 was P type poly semiconductor, second type semiconductor layer 144 was a N+ type poly semiconductor; Or first type semiconductor layer 142 when being N+ type poly semiconductor, second type semiconductor layer 144 is a P type poly semiconductor.With the InGaN is example, and when being P type polycrystalline InGaN semiconductor layer as if first type semiconductor layer 142, second type semiconductor layer 144 is a N+ type polycrystalline InGaN semiconductor layer.

Second figure is depicted as another embodiment of the utility model solar battery structure 100 ', when three or five family's polycrystal semiconductor layers 14 ' comprise three layers, it comprises one first type semiconductor layer 142, one second type semiconductor layer 144 and an essential type semiconductor layer 146, when wherein first type semiconductor layer 142 is P type poly semiconductor, second type semiconductor layer 144 is a N+ type poly semiconductor, and essential type semiconductor layer 146 is an I type poly semiconductor; Or first type semiconductor layer 142 when being N+ type poly semiconductor, second type semiconductor layer 144 is a P type poly semiconductor, essential type semiconductor layer 146 is an I type poly semiconductor.With the InGaN is example, and when being P type polycrystalline InGaN semiconductor layer as if first type semiconductor layer 142, second type semiconductor layer 144 is a N+ type polycrystalline InGaN semiconductor layer, and essential type semiconductor layer 146 is an I type polycrystalline InGaN semiconductor layer.

In fact, itself can't be formed at the semiconductor of three or five families on the transparency carrier, but because the bond of the semiconductor of three or five families and amorphous silicon is close, and lattice is close, constitutes the semi-conductive solar cell of three or five families so can see through amorphous silicon layer with transparency carrier.Three or five family's polycrystal semiconductor layers are for to form first type semiconductor layer and second type semiconductor layer in regular turn on amorphous silicon layer, or form first type semiconductor layer, essential type semiconductor layer and second type semiconductor layer on amorphous silicon layer in regular turn.

In sum, high efficiency solar cell provided by the utility model uses on the transparency carrier to replace three or five traditional family's substrates, by the characteristic of the lattice of amorphous silicon layer own, the polycrystal semiconductor layer of three or five families can be deposited on the amorphous silicon layer, finish solar battery structure, therefore the utility model need not adopt three or five expensive family's substrates, can significantly reduce cost, and, can make large-area solar cell because of the transparency carrier cost is low, and then increase the extinction area, promote conversion efficiency.

The above is preferred embodiment of the present utility model only, is not to be used for limiting the scope that the utility model is implemented.So be that all equalizations of doing according to described feature of the utility model application range and spirit change or modification, all should be included in the claim of the present utility model.

Claims

1. a high efficiency solar cell is characterized in that, comprising:

One transparency carrier;

One amorphous silicon layer is formed on this transparency carrier; And

2. high efficiency solar cell as claimed in claim 1 is characterized in that, the material of this transparency carrier is glass, quartz, perspex or signle crystal alumina.

3. high efficiency solar cell as claimed in claim 1 is characterized in that, this amorphous silicon layer utilizes the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.

4. high efficiency solar cell as claimed in claim 1 is characterized in that, this three or five family polycrystal semiconductor layer utilizes Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.

5. high efficiency solar cell as claimed in claim 1 is characterized in that, the material of this three or five family polycrystal semiconductor layer is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.

6. high efficiency solar cell as claimed in claim 1 is characterized in that, when this three or five family polycrystal semiconductor layer is two-layer, comprises one first type semiconductor layer and one second type semiconductor layer.

7. high efficiency solar cell as claimed in claim 6 is characterized in that, when this first type semiconductor layer was P type poly semiconductor, this second type semiconductor layer was a N+ type poly semiconductor; Or this first type semiconductor layer is when being N+ type poly semiconductor, and this second type semiconductor layer is a P type poly semiconductor.

8. high efficiency solar cell as claimed in claim 1 is characterized in that, when this three or five family polycrystal semiconductor layer is three layers, comprises one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.

9. high efficiency solar cell as claimed in claim 8 is characterized in that, when this first type semiconductor layer was P type poly semiconductor, this second type semiconductor layer was a N+ type poly semiconductor; Or this first type semiconductor layer is when being N+ type poly semiconductor, and this second type semiconductor layer is a P type poly semiconductor.