CN201853743U - Surface-mounted power light emitting diode (LED) support structure - Google Patents
Surface-mounted power light emitting diode (LED) support structure Download PDFInfo
- Publication number
- CN201853743U CN201853743U CN2010202157194U CN201020215719U CN201853743U CN 201853743 U CN201853743 U CN 201853743U CN 2010202157194 U CN2010202157194 U CN 2010202157194U CN 201020215719 U CN201020215719 U CN 201020215719U CN 201853743 U CN201853743 U CN 201853743U
- Authority
- CN
- China
- Prior art keywords
- hole
- positive
- negative electrode
- layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to a surface-mounted power light emitting diode (LED) support structure which is characterized in that a common insulating plate is used as a base plate, a metal layer I covers the upper surface of the insulating plate and a metal layer II covers the lower surface of the insulating plate; a circuit board is provided with at least one hole; a metal layer is arranged on the inner wall of the hole; a thick metal layer is formed by the metal layer II and a metal layer III which is integrated with the metal layer II, and the thickness of the metal layer at the bottom of the hole can bear an LED chip; the upper surface of the circuit board is provided with a circuit layer I, the lower surface of the circuit board is provided with a circuit layer II, and the circuit layer I, the circuit layer II and the hole form the power LED support structure; and by cutting the power LED support structure, independent power LED support units can be obtained. The surface-mounted power LED support structure has the advantages that the structural design is unique, the reliability is high, the light emitting performance is good, the heat dissipation effect is good, the application scope is wide, the universality is high, the structure is suitable for industrial mass production and very remarkable technical effects are achieved.
Description
Technical field
The utility model relates to a kind of structure of led support of the LED of being applied to device, is specifically related to a kind of surface attaching type power LED device supporting structure.
Background technology
Semiconductor lighting be described as the 4th generation lighting source, popularization and application is to the general illumination field gradually.Wherein, power led (power LED) is received by the market with high brightness, high power.The support that conventional power LED is used has two kinds: PLCC type (plastic leaded chip carrier, plastic packaging band lead-in wire chip carrier) and ceramic substrate.
Be the PLCC type supporting structure schematic diagram of prior art as shown in Figure 1.PLCC type support is the plastic casing 01 coated metal lead frame 02 with reflection cavity structure, and this metal lead wire frame 02 has the pin 05 that the chip mount portion 03 of carrying led chip 04 and electrode are used; This chip mount portion 03 is into a single integrated structure with one of positive and negative electrode.Because PLCC type support has reflection cavity and compact conformation, is particularly suitable for being applied to the light distribution requirements height, mounts the high field of density.Produce the problem of high heat energy when there is work in great power LED, need to adopt technological means that the heat energy that is produced is well distributed, otherwise can influence its life-span and go out light effect.Therefore the typical package structure of the PLCC type support used of great power LED is: the plastic casing with reflection cavity structure is except the coated metal lead frame, also parcel places led chip bottom and is exposed to heat sink outside the support, the material that this is heat sink is generally selected radiating effect good metal material for use, for example copper is beneficial to distribute the high heat energy that produces when LED works.Because radiating effect is good, PLCC type great power LED is one of at present the most frequently used high-power LED encapsulation structure.
The support that another kind of conventional power LED is used is a ceramic substrate, its typical package structure as shown in Figure 2: the substrate 06 of carrying led chip with place the reflection cavity 07 on this substrate 06 all to adopt ceramic material; For great power LED device situation, the chip mount place of substrate 06 also has the through hole 08 of at least one, fills Heat Conduction Material in the through hole 08, strengthens radiating effect, satisfies the heat radiation requirement of great power LED device.Because ceramic substrate has good insulation performance and thermal diffusivity, so such substrate is widely used in the great power LED field, occupies whole great power LED market in the lump with PLCC type support.
However, all there are some shortcomings in PLCC type support and ceramic substrate.With regard to PLCC type support, its manufacturing process complexity, the required precision height has had a lot of relevant patent applications, and its core key technology is still grasped abroad in enterprise's hand, and technology is ripe relatively, and room for improvement is limited.Particularly the PLCC type support used of power LED also needs in conjunction with heat sink heat radiation of assembling, owing to added heat sinkly, needs preparation counterbore and assembling heat sink, so its structure is complicated more, causes the support packaging technology more loaded down with trivial details.Simultaneously, the great power LED volume of PLCC type is big, and its encapsulating structure can not be applied to solder reflow process, is not suitable for the test and the Tape Technology of automatic lotization, the mass welded and installed that yet is unfavorable for downstream product especially is not suitable for the surface mount process that follow-up LED product is made.As seen the complex structure of existing P LCC type support, make its manufacturing process relative complex, the processing cost of product is also higher relatively, and the subsequent machining technology of product is limited, increased follow-up LED production cost of products and reduced production efficiency, and respective limits the range of application of PLCC type support power LED.
Though ceramic substrate can overcome the major defect of PLCC type support, a common problem of ceramic substrate is that the manufacturing process difficulty is big, and cost is high and material is crisp.This also is to limit the key factor that ceramic substrate can not replace PLCC type support fully at present.
In sum, need to seek that a kind of manufacturing process is simple, product bright dipping and radiating effect is good, processing cost is lower led support structure, compare with PLCC type support with aforementioned ceramic substrate, can overcome the technical disadvantages of above-mentioned existing PLCC type support and ceramic substrate.In the existing technological improvement, those skilled in the art are attempting aspect manufactured materials, the manufacture craft, but all well do not solve and overcome above-mentioned technological deficiency.
Before the utility model is made, the applicant had once proposed the technical scheme that application number is 201020182596.9, name is called " a kind of surface attaching type power LED supporting structure " utility model, a kind of surface attaching type power LED supporting structure that adopts single face copper coating board and sheet metal to make is proposed, have that manufacture method is simple, cost is low, the advantage of radiating effect, can overcome the PLCC type support that power LED often has and the shortcoming of ceramic substrate, have the potentiality of capturing power LED support market.Yet, further also finding in the research, because between single face copper coating board and the sheet metal only is to be connected by bonding film, the space may appear between the via bottoms edge of single face copper coating board and sheet metal, so can cause and be difficult for causing the reliability of this power LED support to have certain problem by as reliability tests such as " red ink ".And because via bottoms is not fine and close the connection with sheet metal, it is discontinuous level and smooth to form bottom, chip mount place, reduces so can cause the reflecting rate of led chip.
The utility model is at above-mentioned technological deficiency, proposition can solve the problems of the technologies described above technology new departure.The utility model provides a kind of technology prejudice that can overcome the encapsulating material that common insulation board that those skilled in the art generally believe such as pcb board be not suitable as power LED, solve simultaneously and use the single face copper coating board, propose the power LED supporting structure that a kind of technology is simple, with low cost, have high reliability, applied range, high-cooling property and high reflecting rate as the problem that may occur the space under the situation of substrate at via bottoms edge and sheet metal.
The utility model content
Compare with PLCC type support with the ceramic substrate of prior art, common insulation board, as pcb board, its have cheap, for the ripe relatively advantage of the processing technology of plate, promptly have the advantage that cost is low, be easy to process.Yet radiating effect is poor, the shortcoming of poor heat resistance because common insulation board exists, and those skilled in the art generally believe that it is not suitable for the requirement of the high-cooling property of power-type LED device on the one hand, can only be used for low power LED device, so versatility is relatively poor; On the other hand, because problems such as layering and distortion also appear in its poor heat resistance easily in LED packaging and die bonding technology, rate of finished products is lower, and those skilled in the art generally believe that common insulation board is not suitable as the encapsulating material of power LED.
The utility model overcomes above-mentioned technology prejudice, the common insulation board plate that adopts two-sided metal-clad is as the substrate of making the power LED support, what made is on the basis of technical scheme of stent substrate and bonded metal sheet with the single face copper coating board, further technological innovation and the improvement carried out at the technological deficiency that also exists, the utility model uses common insulation board to be substrate, constitute two-sided metal-clad wiring board at its two-sided metal level that is covered with, as the substrate of making surface attaching type power LED support, by innovation particular design, provide a kind of surface attaching type power LED supporting structure purpose for supporting structure.
Technical scheme according to surface attaching type power LED support of the present utility model, its structure comprises: described support is as the support wiring board with two-sided metal-clad wiring board, the structure of described wiring board is to be substrate with common insulation board, and surface coverage has metal level one, is coated with metal level two at its lower surface thereon; On described wiring board, has at least one hole; Described hole inwall is provided with metal level; Have into a single integrated structure with it metal level three on described metal level two, constitute thick metal layers, the metal layer thickness of bottom, described hole can be carried led chip; Described wiring board upper surface has line layer one, and described wiring board lower surface has line layer two, and the power LED supporting structure is formed in described line layer one, described line layer two and described hole; Cut described power LED supporting structure, separablely go out independently power LED carrier unit.
The stent substrate that two-sided metal-clad wiring board of the present utility model is made structurally has the characteristics that are different from prior art, has hole and support line layer on the described stent substrate, forms described power LED support; Described stent substrate is by metal level one, metal level two and place the common insulated substrate between described two metal levels to form; Described line layer is included in the line layer one of upper surface of base plate and at the line layer two of base lower surface; Described line layer one by around the corresponding aperture, be used for the lead-in wire connecting portion of welded wire and the positive and negative electrode layer one of both sides, corresponding described hole is formed, described lead-in wire connecting portion electrically connects positive and negative electrode layer one respectively; Have thick metal layers in described stent substrate bottom, described line layer two is made up of as chip mount portion and corresponding described chip mount portion and the positive and negative electrode layer two that is electrically insulated with it thick metal layers of bottom, the described hole of correspondence; Described positive and negative electrode layer one, positive and negative electrode layer two electrically connect forms stent electrode; Described hole inwall is provided with metal level.
The technical solution of the utility model supporting structure with respect to prior art on product structure is innovated.On the one hand, the utility model overcomes the prejudice of prior art, employing on common insulation board two-sided metal-clad as the two-sided metal-clad wiring board of making support, by the innovative design of technical solutions of the utility model structure, the common process that adopts common insulation board processing technology and other led supports to make uses two-sided metal-clad wiring board to produce surface attaching type power LED support, technology is simple on the one hand, the production efficiency height, product reliability is good, greatly reduces production cost; On the other hand, by the innovative design of the utility model for supporting structure, the feasible high heat-resisting requirement that can satisfy power LED with the led support of common insulation board manufacturing, since supporting structure of the present utility model with led chip directly and heat conduction good, constitute the integrative-structure thick metal layers contact of chip mount portion, the heat that discharges when allowing led chip work can directly be released into the external world by thick metal layers, so this led support has better heat radiating effect and high reliability, and has the good light effect that goes out, by evidence, the led support of the common insulation board manufacturing of this two-sided metal-clad has good heat resistance, problems such as layering and cracking can not occur in the solid crystalline substance of silver slurry of LED encapsulation.
In sum, method of the present utility model has overcome those skilled in the art and has generally believed that common insulation board can not be used to make the technology prejudice of power LED support, dexterously common insulation board is applied to the manufacturing of led support, simplified the manufacturing process of existing power LED support greatly, improved production efficiency, reduced production cost, the low cost product that method of the present utility model is made, good reliability, heat radiation and bright dipping are effective, can be applied to solder reflow process, the test and the Tape Technology that are fit to automatic lotization, the mass welded and installed that helps downstream product, be particularly useful for the surface mount process that follow-up LED product is made, have more wide applications.As seen, the utility model is the innovation and creation that overcome technology prejudice, and product of the present utility model has obvious improvement with respect to prior art, has obtained very outstanding, positive technique effect.
Description of drawings
Accompanying drawing 1 is depicted as the power LED PLCC type supporting structure schematic diagram of prior art;
Accompanying drawing 2 is depicted as the power LED ceramic substrate supporting structure schematic diagram of prior art;
Accompanying drawing 3 is the structure intention of first embodiment of the present utility model shown in (being made up of accompanying drawing 3A, 3B, 3C, 3D, 3E);
It shown in the accompanying drawing 5 first embodiment product structure schematic diagram of power LED support of the present utility model;
It shown in the accompanying drawing 6 second embodiment product structure of power LED support of the present utility model schematic diagram;
Shown in the accompanying drawing 7 the 3rd embodiment product structure schematic diagram of power LED support of the present utility model
Shown in the accompanying drawing 8 the 4th embodiment product structure schematic diagram of power LED support of the present utility model.
Reference numeral
01 plastic casing, 02 metal lead wire frame, 03 chip mount portion, 04 led chip, 05 electrode pin
06 substrate, 07 reflection cavity
13 blind holes, 131 metallic reflectors, 141 electrode small blind holes, 142 electrodes conduct layers, 14 metal forming
15 thick metal layers, 16 line layers, one 161 lead-in wire connecting portions, 162 positive and negative electrode layers, one 17 line layer two
171 chip mount portions, 172 positive and negative electrode layers two
24 metal formings, 25 bonding films, 26 road layers, one 261 lead-in wire connecting portion, 262 positive and negative electrode layers one
27 line layers, 2 271 chip mount portions, 272 positive and negative electrode layers, 2 281 electrode small through hole, 282 electrodes conduct layers
3 stent substrates, 31 through holes, 311 hole wall metal levels, 32 positive and negative electrodes, 321 electrode small through hole, 322 electrodes conduct layers
33 metal levels, one 34 metal levels, 2 341 hole bottom metal layers, 342 electrode small through hole bottom metal layers, 35 metal formings
351 chip mount portion 371 glasss of holes of 37 glasss of cover plates of 352 positive and negative electrode layers, 2 36 bonding film
4 stent substrates, 41 blind holes, 411 hole wall metal levels, 42 positive and negative electrodes, 421 electrode small blind holes, 43 metal levels one
431 lead-in wire connecting portions, 432 positive and negative electrode layers, one 44 metal level, 2 441 chip mount portions, 442 positive and negative electrode layers two
451 glasss of hole 46 bonding films of 45 glasss of cover plate of 422 electrodes conduct layers
Embodiment
Shown in Figure 1 is the PLCC type support of a prior art, has the plastic casing 01 coated metal lead frame 02 of reflection cavity structure, and this metal lead wire frame 02 has the pin 05 that the chip mount portion 03 of carrying led chip 04 and electrode are used.
Shown in Figure 2 is the ceramic substrate of a prior art, carries the substrate 06 of led chip and places the reflection cavity 07 on this substrate 06 all to adopt ceramic material.
Embodiment one
According to shown in Figure 3, the embodiment one of a kind of power LED supporting structure that provides for the utility model.
As Fig. 3 provided present embodiment structural representation, the concrete structure of present embodiment is described as follows.
The circuit base plate 1 of one two-sided metal-clad as shown in Figure 3A, comprises common insulated substrate 10, and described upper surface of base plate is coated with metal level 1, and described substrate 10 lower surfaces are coated with metal level 12.The material of substrate 10 does not have specific (special) requirements, be common insulation board, as pcb board, preferably, can adopt low-cost glass fabric substrate, CEM-3 (3 grades of composite epoxy materials, English Composit Epoxy Material Grade-3) substrate, CEM-1 (1 grade of composite epoxy material, English Composit Epoxy Material Grade-1) substrate also can preferably adopt bimaleimide resin (BT) substrate and similar base material; Institute's metal-clad is the copper layer preferably.
Has at least one blind hole 13 on the described two-sided metal-clad wiring board; Described blind hole 13 bottoms are metal level two (shown in Fig. 3 B), preferably, the blind hole that has can be M capable * the blind hole array of N row, promptly be have M capable * the stent substrate structure (not shown among Fig. 3) of blind hole 13 arrays of N row.Another preferred version is respectively to have at least one electrode small blind hole 141 in the both sides of the described blind hole of correspondence, to constitute the part (as shown in Figure 3) of electrode.
Described blind hole 13 inwalls are provided with metallic reflector 131.Preferably, described metallic reflector is copper layer or silver layer, can increase the light effect that of LED device.In preferred version with electrode small blind hole 141, described electrode small blind hole 141 inwalls are provided with electrodes conduct layer 142 (shown in Fig. 3 C), to constitute the part of positive and negative electrode, preferably described electrodes conduct layer can be copper layer or silver layer, to improve the electric conductivity of electrode.
Increasing on the metal level 2 12 of the circuit base plate 1 of two-sided metal-clad has into a single integrated structure with it metal level three, constitutes thick metal layers 15 (shown in Fig. 3 D).Preferably described metal level three is copper layers.One of preferred scheme is, has the layer of metal three that adopts electroplating technology or depositing operation and grow at metal level 2 12, described metal three constitutes thick metal layers 15 with metal level 2 12, and the thickness of described thick metal layers 15 is able to carry the thickness of led chip.Another preferred scheme is, on the metal level 2 12 of the lower surface of two-sided metal-clad wiring board 1, also have the metal forming 14 that lamination is pasted, the metal level 22 of described wiring board bottom is that densification is connected with described metal forming 14, into a single integrated structure, constitute thick metal layers 15.In this scheme, preferably bonding film is placed between described metal forming 14 and the wiring board bottom, heat to described bonding film is dissolved into the state with adhibit quality then, the described metal forming 14 of pressing is pasted together itself and described wiring board bottom physics, adopt hot melting process, electroplating technology or depositing operation to make the metal level 12 and the described metal forming 14 of described wiring board bottom integrated then, constitute fine and close the connection, constitute the thick metal layers 15 of integrative-structure.
Have line layer 1 on the metal level one, on thick metal layers 15, having line layer 2 17; Described line layer 1 comprises lead-in wire connecting portion 161 and positive and negative electrode layer 1, and wherein, described lead-in wire connecting portion 161 electrically connects respectively with described positive and negative electrode layer 1; The positive and negative electrode layer 2 172 that described line layer 2 17 comprises chip mount portion 171 and is electrically insulated mutually with it, wherein chip mount portion 171 is bottoms of described blind hole 13, in order to the carrying led chip.In the preferred version with electrode small blind hole 141, the conductive metal layer 142 that also has described small blind hole 141 inwalls electrically connects the structure (shown in Fig. 3 E) that constitutes positive and negative electrode with positive and negative electrode layer 1, positive and negative electrode layer 2 172.Described line layer one, line layer two constitute the power LED supporting structure with described blind hole.
Cut above-mentioned power LED supporting structure, separablely go out independently power LED carrier unit.
In addition, also can on the metal level of the metal forming upper surface of the described line layer 1 of above-mentioned supporting structure, line layer 2 17, blind hole 13 bottoms, blind hole sidewall, re-plating constitute the layer of metal layer, as similar metal levels such as silver layer, gold layer, tin layers, to increase the brightness and the solderability of support.
The supporting structure that has glass cover plate on above-mentioned power LED supporting structure in the formation that glass cover plate also can be installed, the structure of cup cover plate is: common insulation board is the substrate of cup cover plate, as pcb board, preferably, can adopt low-cost glass fabric substrate, CEM-3 (3 grades of composite epoxy materials, English Composit Epoxy Material Grade-3), CEM-1 (1 grade of composite epoxy material, English Composit Epoxy Material Grade-1), FR-1 (1 grade of fire retardant papers substrate, English flameresistant laminates Grade-1), FR-2 (2 grades of fire retardant papers substrates, English flame resistant laminates Grade-2), also can preferably adopt the bimaleimide resin base plate, and similarly substrate is the substrate of cup cover plate, the position that has blind hole on the circuit base plate 1 of described two-sided metal-clad on the described substrate, the cup hole of quantity correspondence, constitute described cup cover plate, preferably, described glass of hole is reflection cup-shaped or cylindric; Described cup cover plate sticks on the upper surface of the circuit base plate 1 of two-sided metal-clad, and wherein said cup bore covers the whole line layer one except that the lead-in wire connecting portion greater than the bore of blind hole.Preferred scheme is to be coated with black material at described cup cover plate upper surface, can increase the contrast of device.
Above-mentioned mounting cup cover plate is for being selectable structure.
What above-mentioned power LED supporting structure adopted is common insulation board, and technology is simple, and the rate of finished products height is largely enhanced productivity with respect to prior art, has reduced processing cost.And above-mentioned power LED carrier unit belongs to the surface attaching type support, the PLCC type support and the ceramic substrate support that can replace existing great power LED to use; Be coated with the power LED carrier unit that black material constitutes for the mounting cup cover plate and at described cup cover plate upper surface, can replace existing conventional top light extracting LED support, be particularly suitable for being applied to the top light extracting LED device that display screen is used.
In the present embodiment, the technology that adopts is very simple, on two-sided metal-clad wiring board 1, has blind hole metal conducting layer 131, and form fine and close the connection after forming metal level three on the metal level two of direct-on-line road plate or pasting metal forming and constitute the thick metal layers of integrative-structure, solved may occur between hole bottom margin and the sheet metal problem in space and caused thus be difficult for by as the problem of reliability tests such as " red ink ", improved the reliability of power LED support; Simultaneously,, make blind hole bottom light slip, improved the light emission rate of LED product because the blind hole of present embodiment bottom constitutes the thick metal layers of integrative-structure.
Embodiment two
According to shown in Figure 4, the embodiment two of a kind of power LED supporting structure that provides for the utility model.
As Fig. 4 provided present embodiment structure intention, the concrete structure of present embodiment is described as follows.
The circuit base plate 2 of one two-sided metal-clad comprises common insulated substrate 20, is coated with metal level 1 at described upper surface of base plate, is coated with metal level 2 22 at described base lower surface; The material of substrate 20 does not have specific (special) requirements, be common insulation board, as pcb board, preferably, can adopt low-cost glass fabric substrate (FR-4), CEM-3 (3 grades of composite epoxy materials, English Composit Epoxy Material Grade-3), CEM-1 (1 grade of composite epoxy material, English Composit EpoxyMaterial Grade-1), preferably the base material of bimaleimide resin (BT) and similar material is a substrate; Preferably, metal level is the copper layer.(shown in Fig. 4 A)
Has at least one through hole 23 (shown in Fig. 4 B) on the described two-sided metal-clad wiring board 2; A preferred scheme is, the described through hole that has be M capable * via-hole array of N row, with constitute M capable * stent substrate (Fig. 4 does not illustrate) of through hole 23 arrays of N row; Another preferred scheme is that the both sides of corresponding described through hole respectively have at least one electrode small through hole 281, constitute the part of electrode.
Be provided with metal level 231 at described through hole 23 inwalls, play reflex; In having electrode small through hole 281 preferred versions, be provided with metal level at described electrode small through hole inwall and constitute electrodes conduct layer 282 (shown in Fig. 4 C), constitute the part of positive and negative electrode.
Remove the most of metal level 2 22 that is covered with metal level wiring board lower surface through etch process, at least around described through hole 23 bottom margins have a metal level 221, constitute the basis of chip mount portion.In the preferred version that is provided with the electrode small through hole, in keeping metal level 2 22, also has metal level 222, as the basis that constitutes positive and negative electrode layer two, to constitute the part of support positive and negative electrode layer around small through hole 281 bottom margins.(shown in Fig. 4 D)
Increasing on described metal level two has into a single integrated structure with it metal level three to constitute thick metal layers, makes the metal level of bottom, hole be able to carry the thickness of led chip.
A preferred scheme that realizes this structure is: on the lower surface metal layer 2 22 of two-sided metal-clad wiring board 2, superimposed and lamination has a metal forming 24, the metal level 2 22 of described two-sided metal-clad wiring board 2 is fine and close connections with described metal forming 24, into a single integrated structure, constitute thick metal layers together.Preferably, described metal forming 24 pressings stick on described wiring board bottom, form false the connection, and described false the connection is the connection shown in the accompanying drawing 4F; Be connected with the integrated formation of described metal forming is fine and close by metal level two, constitute the thick metal layers of integrative-structure described wiring board bottom.In this scheme, preferably bonding film is placed between described metal forming 24 and the wiring board bottom, heat to described bonding film is dissolved into the state with adhibit quality then, the described metal forming 24 of pressing is pasted together itself and described wiring board bottom physics, forming the vacation shown in Fig. 4 F connects, adopt hot melting process, electroplating technology or depositing operation to make two layer 22 on the metal and the described metal forming 24 of described wiring board bottom integrated then, constitute fine and close the connection, constitute the thick metal layers of integrative-structure.In preferred version, also be connected with the vacation that metal forming 24 constitutes shown in accompanying drawing 4F at the electrode of described wiring board metal level 222 with small through hole 281 bottoms with electrode small through hole.Metal forming 24 can adopt hot melting process, electroplating technology or depositing operation to realize with the integrated step of two-sided metal-clad wiring board, make described two-sided metal-clad wiring board bottom 2 through holes metal level 221 and 24 fine and close connections of metal forming on every side, form integrative-structure, realize that metal forming and two layer 22 on two-sided metal-clad wiring board metal are integrated.Preferably, under situation, also comprise making the electrode of described wiring board connect with metal forming 24 densifications, form the thick metal layers (shown in accompanying drawing 4E, 4F, 4G) of integrative-structure with the metal level 222 of small through hole 281 bottoms with electrode small through hole.
Because when metal forming 24 is pasted together with two-sided metal-clad wiring board 2 physics, the metal level 221 of described through hole 23 bottoms does not have the structure that fully really do not link into an integrated entity with metal forming 24, have the space therebetween, this will cause led support as occurring underproof problem in the reliability tests such as " red ink ", influence the reliability and stability of led support.Integrated by metal forming and two-sided metal-clad wiring board, described two-sided metal-clad wiring board 2 bottoms and metal forming 24 densifications connect, realized that metal forming and two-sided metal-clad wiring board are integrated, overcome owing to the serious underproof defective of above-mentioned reliability test, strengthened the reliability of this power LED support.In addition, this structure has constituted level and smooth via bottoms, can increase the reflecting rate of LED device.
In addition, can also etch metal layers 1 constitute line layer 1, the described thick metal layers of etching constitutes line layer 2 27, and the structure of described line layer 1 comprises lead-in wire connecting portion 261 and positive and negative electrode layer 1, wherein, lead-in wire connecting portion 261 electrically connects positive and negative electrode layer 1 respectively; The structure of described line layer 2 27 comprises chip mount portion 271 and positive and negative electrode layer 2 272, the two is electrically insulated mutually, wherein chip mount portion 271 is metal forming 24 parts that place through hole 23 bottoms and sealing through hole 23 bottoms, in order to carrying led chip (shown in Fig. 4 H).In the preferred version with positive and negative electrode small through hole, also etching constitutes described positive and negative electrode layer 2 272, and described positive and negative electrode layer 2 272 is the metal level parts that are positioned at electrode small through hole 281 bottoms and enclosed electrode small through hole 281 bottoms.The metal level 282 of electrode small through hole 281 inwalls electrically connects positive and negative electrode layer 1 and positive and negative electrode layer 2 272 respectively, forms the positive and negative electrode 18 (shown in Fig. 4 H) of power LED support jointly.
Described identical with embodiment one, can also constitute electrodeposition of metals at metal forming 24 upper surfaces of described line layer 1, line layer 2 27, through hole 23 bottoms, the metal level 231 of through hole 23 sidewalls by electroplating technology, as similar metal levels such as silver layer, gold layer, tin layers, with brightness and the solderability that increases described support.This structure is optional structure.
Described identical with embodiment one, a glass cover plate can also be installed on described support, the structure of described cup cover plate is identical with embodiment one described related content, does not repeat them here.This structure is optional structure.
The power LED support of cutting said structure is isolated independently power LED carrier unit.
Above-mentioned power LED support is processing of common insulation board, and technology is simple, and the rate of finished products height is largely enhanced productivity with respect to prior art, has reduced processing cost.
Because the via metal conductive layer 231 that on two-sided metal-clad wiring board 1, constitutes, and metal level 2 22 constitutes the thick metal layers of integrative-structure with 24 fine and close connections of back formation of metal forming of pasting, this structure has solved between the edge of bottom, hole and the metal level space and caused thus being difficult for by the problem as reliability tests such as " red ink " may occur, improved the reliability of power LED support, simultaneously, because present embodiment technology, the metal level that is provided with at through-hole wall and the thick metal layers formation integrative-structure of via bottoms, make hole bottom light slip, improved the light emission rate of LED product.
Embodiment three
According to shown in Figure 5, a kind of power LED support that provides for the utility model, its structure comprises: a two-sided metal-clad wiring board is a stent substrate 3, at least one is arranged on the through hole 31 of described stent substrate 3, and is positioned at the positive and negative electrode 32 of through hole 31 both sides and the chip mount portion 351 of through hole 31 bottoms.Wherein, described stent substrate 3 is by metal level 1, metal level 2 34 with place the insulated substrate between described two metal levels to form; Preferably, described plus or minus electrode 32 comprises respectively that also at least one runs through the electrode small through hole 321 of stent substrate 3, is provided with conductive layer 322 or inserts electric conducting material (not indicating) at described electrode small through hole 321 inwalls; Described metal level 1 constitutes line layers one, comprise the positive and negative electrode layer 1 that is positioned at around the through hole 31, is used for the lead-in wire connecting portion 331 of welded wire and is positioned at described through hole both sides, and lead-in wire connecting portion 331 electrically connects positive and negative electrode layer 1 respectively; Described metal level 2 34 constitutes line layer two, comprises metal level 341 that centers on through hole 31 bottoms and the metal level 342 that centers on electrode small through hole 321 bottoms; Described through hole 31 inwalls are coated with 311 reflexs of metal level; Comprise that also one places the metal forming 35 of described stent substrate 3 bottoms, metal forming 35 parts that wherein seal described through hole 31 bottoms are called chip mount portion 351; Described metal forming 35 sticks on the bottom of stent substrate 3 by bonding film 36, and metal forming 35 is into a single integrated structure with the metal level 341 of through hole 31 bottoms; Described metal forming 35 also comprises the positive and negative electrode layer 2 352 that is electrically insulated with chip mount portion 351.Described electrodes conduct layer 322 or described electric conducting material (not indicating) electrically connect with described plus or minus electrode layer 1, plus or minus electrode layer 2 352.
Embodiment four
According to shown in Figure 6, the utility model provides the improvement of a kind of last embodiment of power LED support, and the difference of its structure and last embodiment is: comprise that also one is arranged at the cup cover plate 37 of stent substrate 3 upper surfaces.Wherein, this glass cover plate 37 is to be connected with stent substrate 3 upper surfaces by bonding film 36; This glass cover plate 37 also comprises the i.e. cup hole 371 of the poroid cup corresponding with through hole 31 positions; The aperture in this glass hole 371 is greater than the aperture of through hole 31, and lead-in wire connecting portion 331 is exposed in glass hole 371; This glass cover plate 37 covers positive and negative electrode 32.Preferably, 37 glasss of holes 371 of this glass cover plate can be reflection cup-shapeds or cylindric, are not limited to present embodiment; Preferably, this glass cover plate 37 upper surfaces can apply black material, increase contrast, are particularly suitable for being applied in the indoor outer LED display.
Embodiment five
According to shown in Figure 7, a kind of power LED support specific embodiment that provides for the utility model, its structure comprises: a two-sided metal-clad wiring board is a stent substrate 4, and at least one is arranged on the blind hole 41 of described stent substrate 4, and the positive and negative electrode 42 that is positioned at blind hole 41 both sides.Wherein, described stent substrate 4 is by metal level 1, metal level 2 44 with place the insulated substrate between described two metal levels to form; Described metal level 1 constitutes line layers one, comprise the positive and negative electrode layer 1 that is positioned at around the blind hole 41, is used for the lead-in wire connecting portion 431 of welded wire and is positioned at described blind hole both sides, and lead-in wire connecting portion 431 electrically connects positive and negative electrode layer 1 respectively; Described metal level 2 44 constitutes line layer two, comprises metal level (being called chip mount portion 441) and positive and negative electrode layer 2 442 as blind hole 41 bottoms; Described blind hole 41 inwalls are coated with 411 reflexs of metal level; Described chip mount portion 441 and positive and negative electrode layer 2 442 are electrically insulated.Preferably, described plus or minus electrode 42 comprises that also at least one runs through the electrode small blind hole 421 of backbone metal layer 1, substrate 4, be provided with electrodes conduct layer 422 or insert electric conducting material (not mark) at described electrode small blind hole 421 inwalls, described electrodes conduct layer 422 or described electric conducting material and described plus or minus electrode layer 1, plus or minus electrode layer 2 442 electrically connect.
Embodiment six
According to shown in Figure 8, the improvement of the last embodiment of a kind of power LED support that provides for the utility model, the difference of its structure and last embodiment is: comprise that also one is arranged at the cup cover plate 45 of stent substrate 4 upper surfaces.Wherein, this glass cover plate 45 is to be connected with stent substrate 4 upper surfaces by bonding film 46; This glass cover plate 45 also comprises the i.e. cup hole 451 of the poroid cup corresponding with blind hole 41 positions; The aperture in this glass hole 451 is greater than the aperture of blind hole 41, and lead-in wire connecting portion 431 is exposed in glass hole 451; This glass cover plate 45 covers positive and negative electrode 42.This glass cover plate 45 can be a reflection cup-shaped or cylindric, is not limited to present embodiment; In other embodiments, this glass cover plate 45 upper surfaces can apply black material, increase contrast, are particularly suitable for being applied in the indoor outer LED display.
In sum, the utility model has overcome prior art prejudice, adopt common insulation board as the substrate of making the power LED support, process is simple, rate of finished products is high, the product structure design uniqueness, product cost is low, popularization is strong, and its radiating effect is good, applied range, be suitable for industrialized mass production, obtained very outstanding technique effect.
Claims (17)
1. surface mount power-type LED supporting structure is characterized in that:
Described support be with two-sided metal-clad wiring board as the support wiring board, the structure of described wiring board is to be substrate with common insulation board, surface coverage has metal level one, is coated with metal level two at its lower surface thereon; On described wiring board, has at least one hole; Described hole inwall is provided with metal level; Have into a single integrated structure with it metal level three on described metal level two, constitute thick metal layers, the metal layer thickness of bottom, described hole can be carried led chip; Described wiring board upper surface has line layer one, and described wiring board lower surface has line layer two, and the power LED supporting structure is formed in described line layer one, described line layer two and described hole; Cut described power LED supporting structure, separablely go out independently power LED carrier unit.
2. supporting structure as claimed in claim 1 is characterized in that:
Described wiring board is to be insulated substrate with the pcb board, the hole that has on the described wiring board be M capable * the hole array of N row.
3. supporting structure as claimed in claim 1 is characterized in that:
The most of metal level two of the lower surface of wiring board is removed, and has the metal level two that centers on bottom, described hole at least, constitutes the basis of line layer two; Described line layer two is made of the metal level two of wiring board lower surface reservation and the metal level three after the etching.
4. supporting structure as claimed in claim 1 is characterized in that:
The structure of described line layer one is by forming around the lead-in wire connecting portion in described hole with the positive and negative electrode layer one that described lead-in wire connecting portion electrically connects respectively, the structure of described line layer two is to be positioned at the chip mount portion of bottom, described hole and positive and negative electrode layer two composition that are electrically insulated with described chip mount portion, described chip mount portion is in order to the carrying led chip, described positive and negative electrode layer one and described positive and negative electrode layer two electrically connect, and constitute the positive and negative electrode of support.
5. structure as claimed in claim 4 is characterized in that:
Respectively have at least one electrode aperture in the both sides in the described hole of correspondence, described electrode aperture inwall be provided with porose in metal conducting layer, constitute the part of electrode; Be removed at the most of metal level two of the lower surface of wiring board, have at least around bottom, described hole and the metal level that centers on described electrode aperture bottom at least; Described positive and negative electrode layer one, positive and negative electrode layer two electrically connect by described electrode aperture inwall metal conducting layer, and described positive and negative electrode layer one, positive and negative electrode layer two, electrode aperture metal conducting layer are formed the positive and negative electrode of support.
6. structure as claimed in claim 5 is characterized in that:
Described insulation board is glass fabric substrate, CEM-3 substrate, CEM-1 substrate or bimaleimide resin (BT) substrate; Institute's metal-clad one, metal level two are copper layers; The hole of described formation be M capable * the hole array of N row; Described hole wall metal level is copper layer or silver layer; Described metal level three is the copper layer.
7. structure as claimed in claim 1 is characterized in that: the inwall in described line layer one, described line layer two and the described hole of described supporting structure is coated with the layer of metal layer.
8. structure as claimed in claim 1 is characterized in that: at described supporting structure a glass cover plate is installed, described cup cover plate is a substrate with common insulation board; Have on the described substrate with the support wiring board on the corresponding cup in described hole, described cup bore is greater than the bore in hole, constitutes described cup cover plate; Described cup cover plate is installed and is sticked on described wiring board upper surface, exposes described hole, covers the whole line layer one except that the lead-in wire connecting portion.
9. structure as claimed in claim 8 is characterized in that:
Described insulated substrate is glass fabric substrate, CEM-3 substrate, CEM-1 substrate, FR-1 substrate, FR-2 substrate or bimaleimide resin base plate; The cup hole of described cup cover plate is a reflection cup-shaped or cylindric; Described cup cover plate upper surface is coated with black material, to increase the contrast of device; Described cup cover plate is pasted by bonding film and is connected described wiring board upper surface.
10. structure as claimed in claim 1 is characterized in that:
Described hole is a blind hole, and the bottom of described blind hole is a metal level two; Fusion has metal level three on the described metal level two, or deposit or electroplate to generate metal level three is arranged, and constitutes the thick metal layers of integrative-structure, and the thickness of described blind hole bottom metal layers can carry led chip; Described line layer one is by constituting around the lead-in wire connecting portion of described blind hole with positive and negative electrode layer one that described lead-in wire connecting portion electrically connects respectively, described line layer two is to be positioned at the chip mount portion of described blind hole bottom and the positive and negative electrode layer two that is electrically insulated with described chip mount portion, the thick metal layers of described chip mount portion bottom blind hole partly formed, in order to the carrying led chip, described positive and negative electrode layer one and described positive and negative electrode layer two electrically connect, and constitute the positive and negative electrode of support.
11. structure as claimed in claim 10 is characterized in that:
Respectively have at least one electrode small blind hole in the both sides of the described blind hole of correspondence, the bottom of described electrode small blind hole is a metal level two, to constitute the part of electrode; Described electrode small blind hole inwall is provided with conductive metal layer; Described positive and negative electrode layer one is to be made of the electrode small blind hole metal level one on every side that is positioned at after the etching; Described positive and negative electrode layer two is to be made of the thick metal layers that is positioned at electrode small blind hole bottom after the etching; Described positive and negative electrode layer one, positive and negative electrode layer two electrically connect with the little blind inwall metal level of described electrode, form the support positive and negative electrode.
12. structure as claimed in claim 1 is characterized in that:
Described hole is a through hole; The metal level three that increases on the metal level two of described wiring board bottom is metal formings, described metal forming pressing sticks on described wiring board bottom, form false the connection, the metal level of described wiring board bottom is connected with the integrated formation of described metal forming is fine and close, form thick metal layers; Described line layer one is by constituting around the lead-in wire connecting portion of described through hole with positive and negative electrode layer one that described lead-in wire connecting portion electrically connects; Described line layer two is to constitute by the chip mount portion of described via bottoms with positive and negative electrode layer two that described chip mount portion is electrically insulated, described chip mount portion is the thick metal layers part of the via bottoms after the etching, in order to carrying LED chip, described positive and negative electrode layer one and described positive and negative electrode layer two electrically connect, and constitute the positive and negative electrode of support.
13. structure as claimed in claim 12 is characterized in that:
Most of metal level two at the wiring board lower surface is removed, have after the etching at least around the metal level two of described via bottoms, as the basis of line layer two; Described metal forming is pasted by pressing of bonding film high temperature and described wiring board bottom physics, forms false the connection with described metal level two around described via bottoms; Make metal forming change into fine and close the connection by fusion, plating or deposit, form integrative-structure, constitute thick metal layers with metal level two one of described wiring board bottom.
14. structure as claimed in claim 13 is characterized in that:
Respectively have at least one electrode small through hole in the both sides of the described through hole of correspondence, be provided with conductive layer, constitute the part of electrode at described electrode small through hole inwall; Also has the metal level two after the etching, as the basis of electrode layer two around electrode small through hole bottom; Described metal forming pressing sticks on described wiring board bottom, also forms false the connection with the metal level two around electrode small through hole bottom of described wiring board bottom; Described positive and negative electrode layer one electrically connects with described electrode aperture inwall metal conducting layer, described positive and negative electrode layer two is the thick metal layers parts after the small through hole bottom etching, electrically connect with described electrode aperture inwall metal conducting layer, described positive and negative electrode layer one, positive and negative electrode layer two, electrode small through hole are formed the positive and negative electrode of support.
15. as claim 11 or 14 described power LED supports, it is characterized in that: the positive and negative electrode of both sides, described hole is respectively arranged with three electrode apertures; Described electrode aperture inwall is provided with metal conducting layer or is filled with the inner conductive material, and electrically connects with described positive and negative electrode layer one, positive and negative electrode layer two, constitutes positive and negative electrode.
16. as claim 10 or 12 described power LED supports, it is characterized in that: described support comprises that also one is arranged on the cup cover plate of stent substrate upper surface, described cup cover plate be with the bonding connection of stent substrate upper surface together; Described cup cover plate comprises the cup hole corresponding with described hole site; The aperture in described cup hole is greater than the aperture in described hole, and described lead-in wire connecting portion is exposed in the described cup hole; Described cup cover plate covers positive and negative electrode layer one.
17. power LED support as claimed in claim 16 is characterized in that:
Described cup cover plate is glass fabric substrate, CEM-3 substrate, CEM-1 substrate, FR-1 substrate, FR-2 substrate or bimaleimide resin base plate; The cup hole of described cup cover plate is a reflection cup-shaped or cylindric; Described cup cover plate upper surface is coated with black material.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202157194U CN201853743U (en) | 2010-06-04 | 2010-06-04 | Surface-mounted power light emitting diode (LED) support structure |
| KR1020127022674A KR101495409B1 (en) | 2010-06-04 | 2010-08-25 | A manufacture method for a surface mounted power led support and its product |
| JP2012554194A JP2013520807A (en) | 2010-06-04 | 2010-08-25 | Manufacturing method and product of surface mount power LED support |
| PCT/CN2010/076325 WO2011150597A1 (en) | 2010-06-04 | 2010-08-25 | A manufacture method for a surface mounted power led support and its product |
| EP10852393.7A EP2515352B1 (en) | 2010-06-04 | 2010-08-25 | A manufacture method for a surface mounted power led support |
| US13/579,110 US9157610B2 (en) | 2010-06-04 | 2010-08-25 | Manufacture method for a surface mounted power LED support and its product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202157194U CN201853743U (en) | 2010-06-04 | 2010-06-04 | Surface-mounted power light emitting diode (LED) support structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201853743U true CN201853743U (en) | 2011-06-01 |
Family
ID=44096127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202157194U Expired - Fee Related CN201853743U (en) | 2010-06-04 | 2010-06-04 | Surface-mounted power light emitting diode (LED) support structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201853743U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270734A (en) * | 2010-06-04 | 2011-12-07 | 佛山市国星光电股份有限公司 | Method for manufacturing surface mounting type power LED (light emitting diode) support and product thereof |
| CN103140036A (en) * | 2011-11-24 | 2013-06-05 | 先丰通讯股份有限公司 | Production method of cooling printed circuit board (PCB) |
| CN103681726A (en) * | 2012-09-10 | 2014-03-26 | 隆达电子股份有限公司 | Light emitting diode substrate array |
| US9157610B2 (en) | 2010-06-04 | 2015-10-13 | Foshan Nationstar Optoelectronics Co., Ltd. | Manufacture method for a surface mounted power LED support and its product |
-
2010
- 2010-06-04 CN CN2010202157194U patent/CN201853743U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270734A (en) * | 2010-06-04 | 2011-12-07 | 佛山市国星光电股份有限公司 | Method for manufacturing surface mounting type power LED (light emitting diode) support and product thereof |
| CN102270734B (en) * | 2010-06-04 | 2013-08-21 | 佛山市国星光电股份有限公司 | Method for manufacturing surface mounting type power LED (light emitting diode) support and product thereof |
| US9157610B2 (en) | 2010-06-04 | 2015-10-13 | Foshan Nationstar Optoelectronics Co., Ltd. | Manufacture method for a surface mounted power LED support and its product |
| CN103140036A (en) * | 2011-11-24 | 2013-06-05 | 先丰通讯股份有限公司 | Production method of cooling printed circuit board (PCB) |
| CN103681726A (en) * | 2012-09-10 | 2014-03-26 | 隆达电子股份有限公司 | Light emitting diode substrate array |
| CN103681726B (en) * | 2012-09-10 | 2016-12-21 | 隆达电子股份有限公司 | Light emitting diode substrate array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102709439B (en) | LED (Light emitting diode) ceramic support and manufacturing method thereof | |
| KR101495409B1 (en) | A manufacture method for a surface mounted power led support and its product | |
| CN102270734B (en) | Method for manufacturing surface mounting type power LED (light emitting diode) support and product thereof | |
| CN201853743U (en) | Surface-mounted power light emitting diode (LED) support structure | |
| CN102064247A (en) | Packaging method and packaging structure for embedded light emitting diode | |
| CN102881806B (en) | Surface mounted device light emitting diode (SMD LED) unit and packaging method thereof | |
| CN102795841A (en) | Alumina-based ceramic, ceramic radiating substrate and preparation method for ceramic radiating substrate | |
| CN102437267B (en) | Light-emitting chip packaging structure of metal substrate | |
| CN203503708U (en) | Sapphire base LED encapsulation structure | |
| CN102237481B (en) | Surface mounted type power light-emitting diode (LED) bracket manufacturing method and product manufactured thereby | |
| CN102064267A (en) | Light emitting diode (LED) support unit for display screen, LED support and method for manufacturing LED support unit | |
| CN102447044B (en) | Insulating base light-emitting chip packaging structure | |
| CN103545436B (en) | Process for sapphire-based LED encapsulation structure and method for packing thereof | |
| CN201853742U (en) | Surface pasting type power light emitting diode (LED) support frame structure | |
| CN103296188B (en) | LED encapsulation structure and preparation method thereof | |
| KR100865835B1 (en) | Led reflector molding process, construction, and loader thereof | |
| CN202018960U (en) | Luminous chip packaging structure of insulating bottom plate | |
| CN206947335U (en) | A kind of upside-down mounting RGB LED encapsulation modules and its display screen | |
| CN101852345A (en) | Light-emitting diode (LED) light source module | |
| CN102364684B (en) | LED (Light-Emitting Diode) module and manufacturing process thereof | |
| CN202616297U (en) | High-power LED heat radiation ceramic substrate | |
| CN201243024Y (en) | Non-throwing encapsulation structure of LED | |
| CN208655696U (en) | A kind of LED flip chip packaging structure | |
| TW201218462A (en) | comprises the steps of preparing a circuit board, forming holes, disposing hole-wall metal layers, increasing the thickness of the metal layers, etching the metal layers, and separating a power LED stand unit | |
| CN210429803U (en) | Flip-chip COB light source with reflector structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20130218 Granted publication date: 20110601 |
|
| RINS | Preservation of patent right or utility model and its discharge | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20130819 Granted publication date: 20110601 |
|
| RINS | Preservation of patent right or utility model and its discharge | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110601 Termination date: 20130604 |