CN201821077U - Overcurrent protection circuit - Google Patents
Overcurrent protection circuit Download PDFInfo
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- CN201821077U CN201821077U CN2010205379257U CN201020537925U CN201821077U CN 201821077 U CN201821077 U CN 201821077U CN 2010205379257 U CN2010205379257 U CN 2010205379257U CN 201020537925 U CN201020537925 U CN 201020537925U CN 201821077 U CN201821077 U CN 201821077U
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- diode
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- drive circuit
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Abstract
The utility model relates to an overcurrent protection circuit, which comprises a primary driving circuit, a low-level driving circuit and a diode D3. A cathode of the diode D3 is connected with the low-level driving circuit, an anode of the diode D3 is connected with the primary driving circuit, and the primary driving circuit is connected with the low-level driving circuit. Compared with the prior art, the overcurrent protection circuit has the advantages of simple circuit, low cost, capability of greatly reducing power consumption during overcurrent and the like.
Description
Technical field
The utility model relates to a kind of protective circuit, especially relates to a kind of current foldback circuit.
Background technology
At present; the protection form of vehicle electronics product is more and more; protective circuit also emerges in an endless stream; in the majority with intelligent chip; and obtained extensive application, but, cost an arm and a leg because its core technology is grasped in the hand of integrated chip manufacturer more; had a strong impact on Enterprises'Competitiveness, so the high circuit of some simple and reliable relatively property is more suitable for the development trend of current domestic market.
In addition, the safeguard measure of many intelligent chips all is the detection that utilizes temperature, according to the temperature protection of overcurrent chips; after temperature lowers; restart work, this has just caused chip repeatedly in overcurrent and the work of protection process, the power consumption when having increased overcurrent.
Summary of the invention
The purpose of this utility model is exactly to provide in order to overcome the defective that above-mentioned prior art exists that a kind of circuit structure is simple, with low cost, the current foldback circuit of the power consumption when having reduced overcurrent greatly.
The purpose of this utility model can be achieved through the following technical solutions:
A kind of current foldback circuit; it is characterized in that; comprise a stage drive circuit, low level drive circuit, diode D3; the negative electrode of described diode D3 is connected with the low level drive circuit; the anode of described diode D3 is connected with a stage drive circuit, and a described stage drive circuit is connected with the low level drive circuit.
A described stage drive circuit comprises triode Q1, resistance R 1, resistance R 2, diode D1, voltage-stabiliser tube D2, capacitor C 1;
Described triode Q1 comprises emitter, collector electrode, base stage, described emitter is connected with power supply, described collector electrode is connected with the anode of diode D1, described base stage is connected with the negative electrode of voltage-stabiliser tube D2 by resistance R 1, described base stage is connected with power supply by resistance R 2, and described base stage is connected with the negative electrode of diode D1;
The anode of described voltage-stabiliser tube D2 is connected with the anode of diode D3;
Described capacitor C 1 one terminates between the anode of the anode of voltage-stabiliser tube D2 and diode D3, other end ground connection.
Described low level drive circuit comprises metal-oxide-semiconductor Q2, resistance R 3, resistance R 4, voltage-stabiliser tube D5;
Described metal-oxide-semiconductor Q2 comprises source electrode, drain electrode, grid, described source ground, described drain electrode is connected with the negative electrode of diode D3, described grid is connected with the negative electrode of voltage-stabiliser tube D5, described grid is by resistance R 4 ground connection, and described grid is connected between the anode of the collector electrode of triode Q1 and diode D1 by resistance R 3.
Described triode Q1 is the positive-negative-positive triode.
Described metal-oxide-semiconductor Q2 is the N-channel MOS pipe.
Compared with prior art, the utlity model has following advantage:
1, circuit structure is simple, and is with low cost.
2, this current foldback circuit belongs to self-locking, and after the load overcurrent took place, circuit cut off output automatically, can resume work the power consumption when having reduced overcurrent so greatly after restarting.
3, can change the overcurrent size neatly by adjusting the value of diode.
Description of drawings
Fig. 1 is a circuit diagram of the present utility model.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is elaborated.
Embodiment
As shown in Figure 1; a kind of current foldback circuit; it is characterized in that; comprise a stage drive circuit 1, low level drive circuit 2, diode D3; the negative electrode of described diode D3 is connected with low level drive circuit 2; the anode of described diode D3 is connected with a stage drive circuit 1, and a described stage drive circuit 1 is connected with low level drive circuit 2.
A described stage drive circuit 1 comprises triode Q1, resistance R 1, resistance R 2, diode D1, voltage-stabiliser tube D2, capacitor C 1; Described triode Q1 comprises emitter, collector electrode, base stage, described emitter is connected with power supply, described collector electrode is connected with the anode of diode D1, described base stage is connected with the negative electrode of voltage-stabiliser tube D2 by resistance R 1, described base stage is connected with power supply by resistance R 2, and described base stage is connected with the negative electrode of diode D1; The anode of described voltage-stabiliser tube D2 is connected with the anode of diode D3; Described capacitor C 1 one terminates between the anode of the anode of voltage-stabiliser tube D2 and diode D3, other end ground connection.Described triode Q1 is the positive-negative-positive triode.
Described low level drive circuit 2 comprises metal-oxide-semiconductor Q2, resistance R 3, resistance R 4, diode D5; Described metal-oxide-semiconductor Q2 comprises source electrode, drain electrode, grid, described source ground, described drain electrode is connected with the negative electrode of diode D3, described grid is connected with the negative electrode of diode D5, described grid is by resistance R 4 ground connection, and described grid is connected between the anode of the collector electrode of triode Q1 and diode D1 by resistance R 3.Described metal-oxide-semiconductor Q2 is the N-channel MOS pipe.
Load load is connected between the drain electrode of the negative electrode of diode D3 and metal-oxide-semiconductor Q2.
The utility model circuit working principle:
When load load just often, switch on moment, because capacitor C 1 both end voltage can not be suddenlyd change, so voltage-stabiliser tube D2 starts working, voltage is stabilized in selected value, impel triode Q1 to start working, the output high level drives the N-channel MOS pipe Q2 steady operation of back level, because N-channel MOS pipe (Q2) is drop-down by force, makes diode D3 that voltage-stabiliser tube D2 anode potential is clamped at low level, voltage-stabiliser tube D2 work guarantees this circuit operate as normal.
When load variations; cause that to flow through N-channel MOS pipe Q2 electric current excessive; the inner equivalence of metal-oxide-semiconductor Q2 is a certain value resistance; make N-channel MOS pipe Q2 drain voltage raise; through diode D3 clamp, then voltage-stabiliser tube D2 anode voltage raises in the stage drive circuit, thereby quits work; triode Q1 also just stops the driving to metal-oxide-semiconductor Q2 so, and circuit is in turn-off protection.
Claims (5)
1. current foldback circuit; it is characterized in that; comprise a stage drive circuit, low level drive circuit, diode D3; the negative electrode of described diode D3 is connected with the low level drive circuit; the anode of described diode D3 is connected with a stage drive circuit, and a described stage drive circuit is connected with the low level drive circuit.
2. a kind of current foldback circuit according to claim 1 is characterized in that, a described stage drive circuit comprises triode Q1, resistance R 1, resistance R 2, diode D1, voltage-stabiliser tube D2, capacitor C 1;
Described triode Q1 comprises emitter, collector electrode, base stage, described emitter is connected with power supply, described collector electrode is connected with the anode of diode D1, described base stage is connected with the negative electrode of voltage-stabiliser tube D2 by resistance R 1, described base stage is connected with power supply by resistance R 2, and described base stage is connected with the negative electrode of diode D1;
The anode of described voltage-stabiliser tube D2 is connected with the anode of diode D3;
Described capacitor C 1 one terminates between the anode of the anode of voltage-stabiliser tube D2 and diode D3, other end ground connection.
3. a kind of current foldback circuit according to claim 1 is characterized in that, described low level drive circuit comprises metal-oxide-semiconductor Q2, resistance R 3, resistance R 4, voltage-stabiliser tube D5;
Described metal-oxide-semiconductor Q2 comprises source electrode, drain electrode, grid, described source ground, described drain electrode is connected with the negative electrode of diode D3, described grid is connected with the negative electrode of voltage-stabiliser tube D5, described grid is by resistance R 4 ground connection, and described grid is connected between the anode of the collector electrode of triode Q1 and diode D1 by resistance R 3.
4. a kind of current foldback circuit according to claim 2 is characterized in that, described triode Q1 is the positive-negative-positive triode.
5. a kind of current foldback circuit according to claim 3 is characterized in that, described metal-oxide-semiconductor Q2 is the N-channel MOS pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205379257U CN201821077U (en) | 2010-09-21 | 2010-09-21 | Overcurrent protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205379257U CN201821077U (en) | 2010-09-21 | 2010-09-21 | Overcurrent protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201821077U true CN201821077U (en) | 2011-05-04 |
Family
ID=43919019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205379257U Expired - Fee Related CN201821077U (en) | 2010-09-21 | 2010-09-21 | Overcurrent protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201821077U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102970010A (en) * | 2012-11-05 | 2013-03-13 | 宁波宏大纺织仪器有限公司 | Drive circuit of electronic silk clamping device for weaving machine |
| CN103347331A (en) * | 2013-06-22 | 2013-10-09 | 潍坊晶兰电源技术有限公司 | Protective circuit for driver chip |
| CN103368412A (en) * | 2012-03-30 | 2013-10-23 | Zf操作系统有限公司 | Junction temperature measurement of a power MOSFET |
-
2010
- 2010-09-21 CN CN2010205379257U patent/CN201821077U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368412A (en) * | 2012-03-30 | 2013-10-23 | Zf操作系统有限公司 | Junction temperature measurement of a power MOSFET |
| CN102970010A (en) * | 2012-11-05 | 2013-03-13 | 宁波宏大纺织仪器有限公司 | Drive circuit of electronic silk clamping device for weaving machine |
| CN103347331A (en) * | 2013-06-22 | 2013-10-09 | 潍坊晶兰电源技术有限公司 | Protective circuit for driver chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110504 Termination date: 20150921 |
|
| EXPY | Termination of patent right or utility model |