CN103347331A - Protective circuit for driver chip - Google Patents
Protective circuit for driver chip Download PDFInfo
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- CN103347331A CN103347331A CN2013102494548A CN201310249454A CN103347331A CN 103347331 A CN103347331 A CN 103347331A CN 2013102494548 A CN2013102494548 A CN 2013102494548A CN 201310249454 A CN201310249454 A CN 201310249454A CN 103347331 A CN103347331 A CN 103347331A
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- effect transistor
- stabilovolt
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Abstract
The invention relates to a protective circuit for a driver chip. The protective circuit for the driver chip comprises a driver chip U1, a diode D1 and a field-effect transistor Q1, the drive output end of the driver chip U1 is connected with the negative electrode of the diode D1, the grid electrode of the field-effect transistor Q1 is connected with the positive electrode of the diode D1, the positive electrode of the diode D1 is grounded through a stabilovolt tube ZD2 and is connected with the negative electrode of the stabilovolt tube ZD2, the positive electrode of the stabilovolt tube ZD2 is grounded, a quick-break protective tube FU is connected between the positive electrode of the diode D1 and the grid electrode of the field-effect transistor Q1, the negative electrode of the diode D1 is grounded through a stabilovolt tube ZD1 and is connected with the negative electrode of the stabilovolt tube ZD1, and the positive electrode of the stabilovolt tube ZD1 is grounded. When the field-effect transistor Q1 is broken down and damaged, the high voltage of the grid electrode of the field-effect transistor Q1 is transmitted to the negative electrode of the stabilovolt tube ZD2 through the quick-break protective tube FU, and thus the stabilovolt tube ZD2 is broken down. At the same time, a large current is generated, the quick-break protective tube FU is fused rapidly, the high voltage is not transmitted to the drive output end of the driver chip U1, and the driver chip U1 is effectively prevented from being damaged.
Description
Technical field
The present invention relates to a kind of power circuit, specifically, relate to a kind of driving chip protection circuit of the LED of being applicable to lighting lamp power, belong to electronic technology field.
Background technology
At present, as shown in Figure 1, the drive circuit of tradition LED lighting lamp power comprises driving chip U1, field effect transistor Q1 and switch transformer T, drive 7 pin of chip U1, it is drive output meets field effect transistor Q1 through the diode D1 of reversal connection grid, the source electrode of field effect transistor Q1 is through resistance R 2 ground connection, diode D1 is parallel with resistance R 1, the grid of field effect transistor Q1 is through resistance R 4 ground connection, the drain electrode of field effect transistor Q1 connects the positive pole of diode D2, one end of switch transformer T primary coil, the negative pole of diode D2 is through parallel resistor R3, capacitor C 1 connects the other end and the power supply of switch transformer T primary coil.
In realizing process of the present invention, the inventor finds to exist at least in the prior art following problem: because field effect transistor Q1 is consumable accessory, punch through damage takes place easily, when field effect transistor Q1 punctures, the high pressure of field effect transistor Q1 drain electrode directly is added to grid, and is added to the drive output that drives chip U1 through resistance R 1, diode D1, makes to drive chip U1 damage, poor stability has improved use cost.
Summary of the invention
The technical problem to be solved in the present invention is at above deficiency, and a kind of safe, driving chip protection circuit that use cost is low is provided.
For solving above technical problem, the present invention is by the following technical solutions: a kind of driving chip protection circuit, comprise and drive chip U1, diode D1 and field effect transistor Q1, the drive output that drives chip U1 connects the negative pole of diode D1, the grid of field effect transistor Q1 connects the positive pole of diode D1, it is characterized in that: the positive pole of described diode D1 is through voltage-stabiliser tube ZD2 ground connection;
The positive pole of described diode D1 connects the negative electrode of voltage-stabiliser tube ZD2, the plus earth of voltage-stabiliser tube ZD2.
A kind of prioritization scheme is connected with fast disconnected protective tube FU between the grid of the positive pole of described diode D1 and field effect transistor Q1.
Another kind of prioritization scheme, the negative pole of described diode D1 is through voltage-stabiliser tube ZD1 ground connection;
The negative pole of described diode D1 connects the negative electrode of voltage-stabiliser tube ZD1, the plus earth of voltage-stabiliser tube ZD1.
After the present invention adopts above technical scheme, compared with prior art, have the following advantages: when field effect pipe Q1 punch through damage, the high pressure of field effect transistor Q1 grid at first is added to the negative electrode of voltage-stabiliser tube ZD2 through fast disconnected protective tube FU, voltage-stabiliser tube ZD2 is punctured.Produced simultaneously big electric current makes fast disconnected protective tube FU quick-break, makes high pressure be unlikely to be added to the drive output that drives chip U1.Protection drives the unlikely damage of chip U1 effectively, for the sake of assurance, meets a voltage-stabiliser tube ZD1 again in the drive output that drives chip U1, makes protective effect more reliable.
The present invention is described in detail below in conjunction with drawings and Examples.
Description of drawings
Accompanying drawing 2 is the circuit theory diagrams that drive chip protection circuit in the embodiment of the invention.
Embodiment
Embodiment; as shown in Figure 2; a kind of driving chip protection circuit; comprise and drive chip U1; field effect transistor Q1 and switch transformer T; drive 7 pin of chip U1; the drive output that namely drives chip U1 connects the grid of field effect transistor Q1 through the diode D1 of reversal connection; the positive pole of diode D1 connects the grid of field effect transistor Q1; the negative pole of diode D1 connects the drive output that drives chip U1; the source electrode of field effect transistor Q1 is through resistance R 2 ground connection; diode D1 is parallel with resistance R 1; the grid of field effect transistor Q1 is through resistance R 4 ground connection; the drain electrode of field effect transistor Q1 connects the positive pole of diode D2; one end of switch transformer T primary coil; the negative pole of diode D2 is through parallel resistor R3; capacitor C 1 connects the other end and the power supply of switch transformer T primary coil; the positive pole of diode D1 connects the negative electrode of voltage-stabiliser tube ZD2; the plus earth of voltage-stabiliser tube ZD2; the negative pole of diode D2 connects the negative electrode of voltage-stabiliser tube ZD1; the plus earth of voltage-stabiliser tube ZD1; be connected with fast disconnected protective tube FU between the grid of the positive pole of diode D1 and field effect transistor Q1, the model that drives chip U1 is SA7527.
When field effect pipe Q1 punch through damage, the high pressure of field effect transistor Q1 grid at first is added to the negative electrode of voltage-stabiliser tube ZD2 through fast disconnected protective tube FU, voltage-stabiliser tube ZD2 is punctured.Produced simultaneously big electric current makes fast disconnected protective tube FU quick-break, makes high pressure be unlikely to be added to the drive output that drives chip U1.Protection drives the unlikely damage of chip U1 effectively, for the sake of assurance, meets a voltage-stabiliser tube ZD1 again in the drive output that drives chip U1, makes protective effect more reliable.
Those skilled in the art will recognize that; above-mentioned embodiment is exemplary; be in order to make those skilled in the art can better understand content of the present invention; should not be understood as limiting the scope of the invention; so long as the improvement of doing according to technical solution of the present invention all falls into protection scope of the present invention.
Claims (3)
1. one kind drives chip protection circuit, comprise and drive chip U1, diode D1 and field effect transistor Q1, the drive output that drives chip U1 connects the negative pole of diode D1, and the grid of field effect transistor Q1 connects the positive pole of diode D1, it is characterized in that: the positive pole of described diode D1 is through voltage-stabiliser tube ZD2 ground connection;
The positive pole of described diode D1 connects the negative electrode of voltage-stabiliser tube ZD2, the plus earth of voltage-stabiliser tube ZD2.
2. a kind of driving chip protection circuit as claimed in claim 1 is characterized in that: be connected with fast disconnected protective tube FU between the grid of the positive pole of described diode D1 and field effect transistor Q1.
3. a kind of driving chip protection circuit as claimed in claim 1 or 2, it is characterized in that: the negative pole of described diode D1 is through voltage-stabiliser tube ZD1 ground connection;
The negative pole of described diode D1 connects the negative electrode of voltage-stabiliser tube ZD1, the plus earth of voltage-stabiliser tube ZD1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102494548A CN103347331A (en) | 2013-06-22 | 2013-06-22 | Protective circuit for driver chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102494548A CN103347331A (en) | 2013-06-22 | 2013-06-22 | Protective circuit for driver chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103347331A true CN103347331A (en) | 2013-10-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102494548A Pending CN103347331A (en) | 2013-06-22 | 2013-06-22 | Protective circuit for driver chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103347331A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104302058A (en) * | 2014-10-23 | 2015-01-21 | 深圳市众明半导体照明有限公司 | Dimming power supply and Bleeder protection circuit thereof |
| CN113595183A (en) * | 2020-11-06 | 2021-11-02 | 深圳市优瑞特检测技术有限公司 | Lithium battery charging management system and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6172383B1 (en) * | 1997-12-31 | 2001-01-09 | Siliconix Incorporated | Power MOSFET having voltage-clamped gate |
| US6229180B1 (en) * | 1998-01-27 | 2001-05-08 | Fuji Electric Co., Ltd. | MOS type semiconductor apparatus |
| CN101312189A (en) * | 2007-05-21 | 2008-11-26 | 万国半导体股份有限公司 | Optimal layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device |
| CN201821077U (en) * | 2010-09-21 | 2011-05-04 | 上海航天汽车机电股份有限公司 | Overcurrent protection circuit |
-
2013
- 2013-06-22 CN CN2013102494548A patent/CN103347331A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6172383B1 (en) * | 1997-12-31 | 2001-01-09 | Siliconix Incorporated | Power MOSFET having voltage-clamped gate |
| US6229180B1 (en) * | 1998-01-27 | 2001-05-08 | Fuji Electric Co., Ltd. | MOS type semiconductor apparatus |
| CN101312189A (en) * | 2007-05-21 | 2008-11-26 | 万国半导体股份有限公司 | Optimal layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device |
| CN201821077U (en) * | 2010-09-21 | 2011-05-04 | 上海航天汽车机电股份有限公司 | Overcurrent protection circuit |
Non-Patent Citations (1)
| Title |
|---|
| 吕国庆等: "基于SA7527的LED照明驱动电路的设计", 《电子产品世界》, 30 June 2011 (2011-06-30) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104302058A (en) * | 2014-10-23 | 2015-01-21 | 深圳市众明半导体照明有限公司 | Dimming power supply and Bleeder protection circuit thereof |
| CN113595183A (en) * | 2020-11-06 | 2021-11-02 | 深圳市优瑞特检测技术有限公司 | Lithium battery charging management system and method |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131009 |