CN203387749U - MOS fault protection line - Google Patents

MOS fault protection line Download PDF

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Publication number
CN203387749U
CN203387749U CN201320527187.1U CN201320527187U CN203387749U CN 203387749 U CN203387749 U CN 203387749U CN 201320527187 U CN201320527187 U CN 201320527187U CN 203387749 U CN203387749 U CN 203387749U
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CN
China
Prior art keywords
mos
resistance
diode
fault protection
protection line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201320527187.1U
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Chinese (zh)
Inventor
许国伟
黄鹤鸣
肖灵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN DONGFANGZHIXING POWER SUPPLY Co Ltd
Original Assignee
SHENZHEN DONGFANGZHIXING POWER SUPPLY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHENZHEN DONGFANGZHIXING POWER SUPPLY Co Ltd filed Critical SHENZHEN DONGFANGZHIXING POWER SUPPLY Co Ltd
Priority to CN201320527187.1U priority Critical patent/CN203387749U/en
Application granted granted Critical
Publication of CN203387749U publication Critical patent/CN203387749U/en
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Expired - Fee Related legal-status Critical Current

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40Control techniques providing energy savings, e.g. smart controller or presence detection

Abstract

The utility model discloses an MOS fault protection line and belongs to the technical field of electronic illumination. The MOS fault protection line mainly comprises an alternating-current power supply, a bridge rectifier, a fuse, a transformer, a switch tube, a resistor, and a control IC. The MOS fault protection line also comprises a diode. The anode of the diode is connected with one end of the resistor while the cathode of the diode is connected with the other end, which is grounded, of the resistor, and thus, a forward-direction parallel connection relationship of the resistor and the diode is established. The MOS fault protection line is provided with the protective resistor and the control IC cannot be burnt and smoke. At the same time, the MOS fault protection line is simple so that the production technology is simple, the production efficiency is increased, and the production cost is reduced.

Description

A kind of MOS error protection circuit
Technical field
The utility model relates to the electrical lighting technical field, particularly a kind of MOS error protection circuit.
Background technology
Along with the fast development of LED light fixture technology is increasingly mature with application, the pith that the LED driving power can luminescence display as the LED light fixture, its technical development is swift and violent.But LED driving power technology is compared the traditional switch power supply; want cube little; simple in circuits; thereby cause the route protection deficiency; cause when the practical application of LED light fixture, the switching tube of LED driving power (MOSFET) short circuit of breaking down, now the LED driving power will there will be the naked light of smoldering; cause the LED light fixture to work, can't reach the requirement of Safety Approval simultaneously.
As shown in Figure 1, after switching tube (MOSFET) short trouble, alternating current (AC), through heap (BD1), transformer (TRANSFORMER), the switching tube (MOSFET) of passing a bridge, then directly is added to resistance (RS) upper, last ground connection; The LED driving power is due to the restriction that is subject to volume simultaneously, resistance (RS) adopts several SMD resistance to be formed in parallel usually, cause underpower, short circuit current can combust resistance (RS), when resistance (RS) combust be blown after large electric current can be through controlling IC to ground, to control IC and burn out, the LED driving power is burned, and finally cause the LED light fixture to work; Simultaneously this kind of LED driving power needs larger space, therefore causes the space limited in the LED lamp interior can't miniaturization.
Summary of the invention
In order to solve above-mentioned existing technical deficiency and defect, the purpose of this utility model is to provide a kind of MOS error protection circuit.
The purpose of this utility model is achieved by the following technical solution:
A kind of MOS error protection circuit, mainly comprise alternating current (AC), bridge heap (BD1), fuse (FUSE), transformer (TRANSFORMER), switching tube (MOSFET), resistance (RS) and control IC; Also comprise a diode (D1), the positive pole of described diode (D1) is connected with an end of resistance (RS), and its negative pole is connected with the other end of resistance (RS) ground connection, forms forward relation in parallel of resistance (RS) and diode (D1).
As the optional technical scheme of the utility model, described resistance (RS) can adopt single plug-in unit resistance also can adopt the parallel connection of many SMD resistance.
In sum, MOS error protection circuit provided by the utility model, the beneficial effect had:
1, guarantee resistance (RS) and control IC can not be burned and smolder.
2, thereby the simple formation of circuit production technology is simple, has improved production efficiency, has reduced production cost.
The accompanying drawing explanation
The schematic diagram that Fig. 1 is prior art scheme circuit.
The schematic diagram that Fig. 2 is a kind of embodiment of the utility model MOS error protection circuit.
Description of reference numerals: AC: alternating current; FUSE: fuse; BD1: bridge heap; TRANSFORMER: transformer; MOSFET: switching tube; RS: resistance; D1: diode.
Embodiment
Below by embodiment also by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.Following with reference to accompanying drawing, the explanation to execution mode of the present utility model is intended to present general inventive concept of the present utility model is made an explanation, and not should be understood to a kind of restriction of the present utility model.
Shown in accompanying drawing 2; the utility model provides a kind of MOS error protection circuit, comprises alternating current (AC), fuse (FUSE), bridge heap (BD1), transformer (TRANSFORMER), switching tube (MOSFET), resistance (RS), diode (D1).
As shown in Fig. 2 embodiment, described bridge heap (BD1) four interfaces, first interface is connected with fuse (FUSE) end, the second interface earth terminal, the 3rd interface is connected with an end of alternating current (AC), and the 4th interface is connected with transformer (TRANSFORMER); The other end of described fuse (FUSE) is connected with the other end of alternating current (AC).Described switching tube (MOSFET) has three contacts, the first contact is connected with a wherein contact of controlling IC, the second contact is connected with described transformer (TRANSFORMER), and the 3rd contact is connected with another contact, an end of described resistance (RS) and the positive pole of described diode of described control IC simultaneously; Earth terminal after the other end of described resistance (RS) is connected with the negative pole of described diode, form forward relation in parallel of described resistance (RS) and described diode (D1).
In the utility model, described resistance (RS) can be plug-in unit resistance or the parallel connection of many SMD resistance; In embodiment as shown in Figure 2, described resistance (RS) adopts plug-in unit resistance.
As shown in Figure 2; after switching tube (MOSFET) breaks down short circuit; electric current is through bridge heap (BD1), transformer (TRANSFORMER), switching tube (MOSFET); then directly be added to resistance (RS) diode (D1) to the ground end; now diode (D1) can be by the unit clamper at resistance (RS) two ends in the 1.1V left and right; thereby the loss power of guaranteeing resistance (RS) is very little; protective resistance (RS) can not be burned; large electric current can directly blow fuse (FUSE), and further protection control IC can not be burnt.Therefore, after fuse (FUSE) is blown, can replace easily another intact fuse, thereby reduce the loss of LED driving power, guarantee that the LED light fixture can work in time.
The above embodiment has only expressed preferred implementation of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model the scope of the claims and embodiment.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.

Claims (2)

1. a MOS error protection circuit, mainly comprise alternating current (AC), bridge heap (BD1), fuse (FUSE), transformer (TRANSFORMER), switching tube (MOSFET), resistance (RS) and control IC; It is characterized in that, also comprise a diode (D1), the positive pole of described diode (D1) is connected with an end of resistance (RS), and its negative pole is connected with the other end of resistance (RS) ground connection, forms forward relation in parallel of resistance (RS) and diode (D1).
2. MOS error protection circuit according to claim 1, is characterized in that, described resistance (RS) can adopt single plug-in unit resistance also can adopt the parallel connection of many SMD resistance.
CN201320527187.1U 2013-08-28 2013-08-28 MOS fault protection line Expired - Fee Related CN203387749U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320527187.1U CN203387749U (en) 2013-08-28 2013-08-28 MOS fault protection line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320527187.1U CN203387749U (en) 2013-08-28 2013-08-28 MOS fault protection line

Publications (1)

Publication Number Publication Date
CN203387749U true CN203387749U (en) 2014-01-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320527187.1U Expired - Fee Related CN203387749U (en) 2013-08-28 2013-08-28 MOS fault protection line

Country Status (1)

Country Link
CN (1) CN203387749U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103415123A (en) * 2013-08-28 2013-11-27 深圳市东方之星电源有限公司 MOS fault protection circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103415123A (en) * 2013-08-28 2013-11-27 深圳市东方之星电源有限公司 MOS fault protection circuit

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140108

Termination date: 20160828

CF01 Termination of patent right due to non-payment of annual fee