CN201820234U - Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology - Google Patents

Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology Download PDF

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Publication number
CN201820234U
CN201820234U CN2010205221648U CN201020522164U CN201820234U CN 201820234 U CN201820234 U CN 201820234U CN 2010205221648 U CN2010205221648 U CN 2010205221648U CN 201020522164 U CN201020522164 U CN 201020522164U CN 201820234 U CN201820234 U CN 201820234U
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China
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resistance
capacitor
mcu
circuit
pin
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CN2010205221648U
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Inventor
陈永辅
徐一心
张坚
李光普
褚庭才
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YANGZHOU HENGXIN INSTRUMENT CO Ltd
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YANGZHOU HENGXIN INSTRUMENT CO Ltd
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    • Y02B60/50

Abstract

A radio-frequency card reading-writing circuit controlled by and comprising an MCU (microprogrammed control unit) supporting nanoWatt technology is capable of reducing operation power consumption substantially. The radio-frequency card reading-writing circuit comprises the MCU with pins 1 to 8, a resonant circuit, a detection circuit, a reference voltage providing circuit, a comparison interface and a power management interface, wherein the MCU supports the nanoWatt technology, the resonant circuit, the detection circuit, the reference voltage providing circuit, the comparison interface and the power management interface are in communication with a radio-frequency card, the resonant circuit includes an inductor L1 and a capacitor C1 which are connected with each other in series, the detection circuit includes a diode D1, a capacitor C2, a capacitor C3, a capacitor C4 and a resistor R5, the reference voltage providing circuit includes a resistor R6, a resistor R7, a resistor R8, a capacitor C5 and a reference voltage source, the comparison interface includes the pin 2 and the pin 3 of the MCU, and the power management interface includes the pin 1 and the pin 8 of the MCU. Besides, the pin 2 is connected with a contact A, the pin 3 is connected with a contact B, and the pin 4 of the MCU is connected with a resistor R14. The radio-frequency card reading-writing circuit employs the MCU supporting the nanoWatt technology as a core, is checked before reading and writing, is closed when the reading-writing circuit is found inconsistent with an initial state, gives out alarm prompt, and prolongs the service life of a battery.

Description

By supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming
Technical field
The utility model relates to a kind of radio-frequency card read/write circuit, relates in particular to a kind of radio-frequency card read/write circuit that utilizes the MCU that supports the nanowatt technology to realize the low-power consumption duty.
Background technology
Non-contact IC card claims radio-frequency card again, is made up of IC chip, induction antenna, is encapsulated in the PVC card of a standard, and chip and antenna do not have any exposed parts.Be a new technology that grows up recent years in the world, its success REID and IC-card technology are combined, be through with passive (non-transformer in the card) contacts this difficult problem with exempting from, and is a quantum jump of field of electronic devices.Card near the read write line surface, is finished data write operation by the transmission of radiowave in certain distance scope (being generally 5-10mm).
Finish read-write operation by radiowave between untouchable IC-card and the card reader.Communication between the two is 125Kz frequently.Untouchable IC-card itself is a passive card, when read write line to sticking into capable read-write operation is, the signal that read write line sends is made up of two parts stack: a part is a power supply signal, after this signal is received by clamping, supplies with chip operation with the transient energy of L/C generation of itself.Another part then is instruction and data-signal, and commander's chip is finished the reading of data, storage etc., and return signal gives read write line, finishes read-write operation one time.Read write line is then generally by single-chip microcomputer, and special intelligent module and antenna are formed, and is furnished with the communication interface with PC, LPT, and I/O mouths etc. are so that be applied to different fields.
Compare with Contact Type Ic Card, contactless card has the following advantages:
1, do not have machinery between the high non-contact IC card of reliability and the read write line and contact, avoided owing to contact and read and write the various faults that produce.For example: because rough plug-in card, non-card foreign object inserts, the fault that dust or greasy dirt cause loose contact to cause.In addition, the no exposed die in contactless card surface need not be worried problems such as chip comes off, electrostatic breakdown, crooked damage, both has been convenient to card print, has improved the dependability of card again.
2, easy to operate.Because the noncontact communication, read write line just can be operated card in the 10CM scope, thus needn't the plug card, very convenient user's use.Contactless card does not have directivity when using, and card can skim over the read write line surface in any direction, but both complete operations, and this has improved the speed of each use greatly.
3, can be suitable for multiple application.The sequence number of contactless card is unique, and manufacturing firm solidifies this sequence number before product export, can not change again.Adopt bi-directional verification mechanism between contactless card and the read write line, i.e. the legitimacy of read write line checking IC-card, IC-card is also verified the legitimacy of read write line simultaneously.
4, encryption performance is good.Non-contact IC card is by the IC chip, and induction antenna is formed, and is sealed in the standard PVC card no exposed parts fully.The read-write process of non-contact IC card is usually by finishing read-write operation by radiowave between non-contact IC card and the read write line.
Non-contact IC card itself is passive body, when read write line when sticking into capable read-write operation, the signal that read write line sends is made up of two parts stack: a part is a power supply signal, this signal by the clamping receipts after, produce resonance with the L/C of itself, produce a transient energy and supply with chip operation.Another part then is a combined data signal, and commander's chip is finished data, modification, storage etc., and returns to read write line.By the formed read-write system of non-contact IC card, no matter be hardware configuration, or operating process has all obtained very big simplification, simultaneously by means of advanced management software, the mode of operation of off line all makes the reading and writing data process more simple.
At present, radio-frequency card is widely used in water meter, calorimeter, gas meter, flow meter, public transport automatic ticketing, parking, and multiple occasions such as meal, work attendance and gate inhibition are sold in charge, dining room automatically, and to radio frequency stick into the circuit application of row read-write maximum be to constitute in conjunction with its peripheral components by integrated device U2270B, as shown in Figure 2.Because U2270B can only be in the voltage range work of 4.5V~5.5V, if the user uses U2270B to design the read system, then need to be operated in 5V or high voltage more, system works under this voltage, power consumption uprises, the effective operating voltage of supplying cell interval also seems narrow, and will consider owing to battery discharge inhomogeneous caused problems such as serviceable life of battery is short.U2270B adopts built-in RC oscillatory circuit that the reference clock of radio frequency is provided, and the frequency characteristic of RC oscillatory circuit is relatively poor aspect stability and temperature coefficient, so need on the RF pin, add a frequency calibration resistance in the read/write circuit of U2270B, when being necessary this resistance is adjusted just and can be reached desirable output frequency, in the process of producing, just need before product export, test and adjust like this, increase the complicacy of production procedure widely the frequency of radio frequency.The sky line drive circuit of U2270B adopts direct-coupled mode, a direct result of doing like this is exactly when there is error in the internal clocking frequency of the natural frequency of the resonant tank of outside serial connection and U2270B, actual transmission frequency on the antenna also can change, and influences the read-write of card.
In addition, adopt logical device gate circuit 4060 in addition, operational amplifier TL062, LM358, ST393 etc., the read-write card circuit of composition since device many, circuit structure relative complex, its intrinsic shortcoming be failure rate than higher, be unfavorable for reduced volume.
Above-mentioned circuit all is directly to be in running status after the energising, and the running status of himself particularly device fault, self the power consumption of circuit is uncontrollable, is difficult to the low power operation of accomplishing that battery power supply system is long-term.
The utility model content
The utility model provides a kind of and can reduce a kind of by supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming of operation power consumption significantly at above problem.
The technical solution of the utility model is: comprise the MCU with 1-8 pin that supports the nanowatt technology, it comprises that also resonant circuit, detecting circuit, reference voltage with the radio-frequency card communication provide circuit, comparison interface and power-management interface;
Described resonant circuit comprises the inductance L 1 and the capacitor C 1 of mutual serial connection;
Described detecting circuit comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end links to each other respectively at the positive terminal of described inductance L 1 and diode D1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 links to each other respectively at the negative pole end of diode D1 and an end of resistance R 5; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, the B contact is arranged;
Described reference voltage provides circuit to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in the A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact respectively;
Described relatively interface comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface comprises 1,8 pin of described MCU;
4 pin of described MCU connect described R14.
It also comprises the amplifying circuit between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit comprises the triode Q1 of NPN type, triode Q2, resistance R 1, resistance R 2, resistance R 14 and the reference voltage source of positive-negative-positive, one end of resistance R 14 links to each other with 4 pin of described MCU, the other end of resistance R 14 is respectively with the B utmost point of triode Q1, triode Q2 and connect, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of the E utmost point of triode Q1 and triode Q2, between resistance R 1 and the resistance R 2 the C contact is arranged, described C contact connects described inductance L 1.
It also comprises the external unit connector, and described external unit connector is 6,7 pin of described MCU.
Circuit of the present utility model, adopting by the MCU that supports the nanowatt technology is the control core of circuit, read/write circuit contains signal and energy emission, signal receiving module, signal processing module; Data and energy emission, receiver module contain coil L1, C1, and the 125Kz that MCU produces, the data that the manchester mode is modulated are exported through the complementary power of Q1, Q2 by its 4pin (pin).L1, C1 resonance are in 125Kz, and L1 is emittance and the modulating data that sends data, read according to the variation reception of its load on the other hand on the one hand; D1, electric capacity (C2, C3, C4) and resistance (R4, R5) are the AM detection, C2, C3, C4, R4, R5 form filtering circuit, link MCU 3Pin through C3, and R7, R8, R6 are the reference cell of MCU internal comparator, give MCU 2, the benchmark that provides of 3Pin, the MCU benchmark demodulates data.3pin also carries out the ad conversion in the gap of data-signal, differentiate and disturb and data, and interfering data is carried out filtering, improves the anti-interference of data transmission.MCU 2,3,4pin is placed in numeral mouthful state during non-read-write, carried out channel check before read-write, when finding not close read/write circuit when being inconsistent with original state, provides alarm, prolonged the serviceable life of battery supply set as much as possible.After testing, operating voltage of the present utility model is 2.7-5v, and working current 4.5mA, quiescent current are 10nA, is example to be applied to intellectual water meter, and copy January one, and power consumption can be guaranteed the battery that intellectual water meter is same in nanowatt level level, works the longer time.In addition, can also expand and be applied to intelligent gas meter, ammeter, mass transit card etc.
Description of drawings
Fig. 1 is a circuit diagram of the present utility model
Fig. 2 is the circuit diagram of another embodiment of the utility model
1 is resonant circuit among the figure, the 2nd, and detecting circuit, the 3rd, reference voltage provides circuit, and the 4th, comparison interface, the 5th, external unit connector, the 6th, amplifying circuit, the 7th, power-management interface, the 8th, MCU, the 9th, radio-frequency card.
Fig. 3 is the circuit diagram of the utility model background technology
Embodiment
Circuit of the present utility model comprises the MCU8 with 1-8 pin that supports the nanowatt technology as shown in Figure 1, and it comprises that also resonant circuit 1, detecting circuit 2, reference voltage with the radio-frequency card communication provides circuit 3, relatively interface 4 and power-management interface 7;
Described resonant circuit 1 comprises the inductance L 1 and the capacitor C 1 of mutual serial connection; Inductance L 1 is carried out communication with radio-frequency card 9.
Described detecting circuit 2 comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end links to each other respectively at the positive terminal of described inductance L 1 and diode D1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 links to each other respectively at the negative pole end of diode D1 and an end of resistance R 5; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, the B contact is arranged;
Described reference voltage provides circuit 3 to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in the A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact respectively;
Described relatively interface 4 comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface 7 comprises 1,8 pin of described MCU;
4 pin of described MCU8 connect described inductance L 1.
Another embodiment of the present utility model as shown in Figure 2, it also comprises the amplifying circuit between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 links to each other with 4 pin of described MCU, the other end of resistance R 14 respectively with triode Q1, the B utmost point of triode Q2 also connects, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of the E utmost point of triode Q1 and triode Q2, between resistance R 1 and the resistance R 2 the C contact is arranged, described C contact connects described inductance L 1.
It also comprises external unit connector 5, and described external unit connector 5 is 6,7 pin of described MCU.
Each modularity circuit of built-up circuit is formed and function:
Resonant circuit 1:L1, C1 form the 125KZ resonant circuit, L1 is emittance, transmission modulating data on the one hand, on the other hand, in card is in radiation area, and after correctly receiving order data, return data in the card is by the load as L1, C1 resonant tank of the coil of inside, load the modulated data message in inside that directly reflects of variation.The data modulated signal that L1, the output of C1 tie point receive.
Detecting circuit 2:D1, R4, R5, C2, C3, C4 are the detecting circuit of data modulated signal.
It is that the reference voltage of the inner comparator circuit of MCU provides circuit that reference voltage provides circuit 3:R7, R8, and C5 provides the filtering of circuit for reference voltage.R6 is the biasing isolation resistance of inner comparator circuit cmpin-, the some position of ordering a little less than a in the some position that b is ordered, and the some position that b was ordered when detecting circuit had data output changes thereupon, and comparer changes according to it, demodulating data.
Relatively interface 4:MCU2,3 pin are when Data Receiving, connect internal comparator, waiting for that 3 pin that receive with reception eve mcu are numeral mouthful input state, whether the level that detection b is ordered is data level, greater than generally being considered as disturbing with width less than data level, MCU also can also switch to the I/O mouth with 2 pin when needed, does the inspection of device integrity.
6,7 pin of external unit connector 5:MCU are the external unit connector.
Amplifying circuit 6:MCU4 pin output 125KH and modulated data-signal, Q1, Q2 are complementary power output tube, and R1, R2 are the parts of output matching circuit, and R14 is Q1, Q2 base drive current-limiting resistance.
Under the direct-connected situation of C, D point (being situation shown in the utility model figure), directly use the io mouth MCU4 pin that contains CMOS complementary push-pull circuit of MCU, output 125KH and modulated data power signal are directly delivered to L1, C1 resonance radiating circuit, to form amplification.
The vdd of power-management interface 7:MCU, vss can connect the battery of 2.7-3.6v, and MCU endorses to be operated in 1.8v.MCU contains power management module in inside, be responsible for the duty of the peripheral components and parts of monitoring and the duty of battery, be subjected to the control of inner strategy mechanism during non-Card Reader, a kind of is to be in holding state, standby current is 60nA, (the nano Watt XLP technology of microchip).The overwhelming majority times are in sleep state during another kind of state, and at this moment self power consumption of mcu is lower.
The utility model and background technology contrast table:
Index The utility model Background technology
Voltage 2.7v-5v 5v
Quiescent current nA uA-mA
The read-write card electric current Less than 4.5mA 10-100mA
ELIMINATION OF ITS INTERFERENCE Have Do not have
The device fault protection Have Do not have
Relevant data of the present utility model:
Standard: ISO 11784/11785
Read-write Card Type: EM4001, EM4100, EM4469, EM4205, HITAGS, T5557
Temperature range :-20~85 degree
Humidity: 95+-2%
Voltage: 2.7-5v
Working current: 4.5mA
Quiescent current: 60nA

Claims (3)

1. by supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming, comprise the MCU with 1-8 pin (8) that supports the nanowatt technology, it is characterized in that it comprises that also resonant circuit (1), detecting circuit (2), reference voltage with the radio-frequency card communication provides circuit (3), relatively interface (4) and power-management interface (7);
Described resonant circuit (1) comprises the inductance L 1 and the capacitor C 1 of mutual serial connection;
Described detecting circuit (2) comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end links to each other respectively at the positive terminal of described inductance L 1 and diode D1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 links to each other respectively at the negative pole end of diode D1 and an end of resistance R 5; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, the B contact is arranged;
Described reference voltage provides circuit (3) to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in the A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact respectively;
Described relatively interface (4) comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface (7) comprises 1,8 pin of described MCU;
4 pin of described MCU (8) connect described inductance L 1.
2. according to claim 1 by supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming, it is characterized in that, it also comprises the amplifying circuit (6) between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit (6) comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 links to each other with 4 pin of described MCU, the other end of resistance R 14 respectively with triode Q1, the B utmost point of triode Q2 also connects, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of the E utmost point of triode Q1 and triode Q2, between resistance R 1 and the resistance R 2 the C contact is arranged, described C contact connects described inductance L 1.
3. the radio-frequency card read/write circuit of being controlled and being formed by support nanowatt technology MCU according to claim 1 is characterized in that it also comprises external unit connector (5), and described external unit connector (5) is 6,7 pin of described MCU.
CN2010205221648U 2010-09-09 2010-09-09 Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology Expired - Lifetime CN201820234U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101957926A (en) * 2010-09-09 2011-01-26 扬州恒信仪表有限公司 Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101957926A (en) * 2010-09-09 2011-01-26 扬州恒信仪表有限公司 Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology
CN101957926B (en) * 2010-09-09 2014-04-09 扬州恒信仪表有限公司 Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology

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