CN101957926A - Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology - Google Patents
Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology Download PDFInfo
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- CN101957926A CN101957926A CN201010276130XA CN201010276130A CN101957926A CN 101957926 A CN101957926 A CN 101957926A CN 201010276130X A CN201010276130X A CN 201010276130XA CN 201010276130 A CN201010276130 A CN 201010276130A CN 101957926 A CN101957926 A CN 101957926A
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Abstract
The invention provides a radio-frequency card reading and writing circuit controlled and formed by an MCU supporting a nanoWatt technology, which relates to a radio-frequency card reading and writing circuit capable of greatly reducing the power consumption in operation. The radio-frequency card reading and writing circuit comprises an MCU which supports the nanoWatt technology and has 1-8 pins, and also comprises a resonant circuit, a detection circuit, a reference voltage supplying circuit, a comparison interface and a power management interface which are communicated with a radio-frequency card, wherein the resonant circuit comprises an inductor L1 and a capacitor C1 which are mutually connected in series; the detection circuit comprises a diode D1, a capacitor C2, a capacitor C3, a capacitor C4 and a resistor R5; the reference voltage supplying circuit comprises a resistor R6, a resistor R7, a resistor R8, a capacitor C5 and a reference voltage source; the comparison interface comprises a pin 2 and a pin 3 of the MCU, wherein the pin 2 is connected with an A connection point, and the pin 3 is connected with a B connection point; the power management interface comprises a pin 1 and a pin 8 of the MCU; and a pin 4 of the MCU is connected with the R14. In the invention, the MCU supporting the nanoWatt technology is taken as a kernel for inspecting the circuit before reading and writing; and when the inspection result does not accord with the initial state, the reading and writing circuit is switched off, and a warning prompt is given, thereby prolonging the battery life.
Description
Technical field
The present invention relates to a kind of radio-frequency card read/write circuit, relate in particular to a kind of radio-frequency card read/write circuit that utilizes the MCU that supports the nanowatt technology to realize the low-power consumption duty.
Background technology
Non-contact IC card claims radio-frequency card again, is made up of IC chip, induction antenna, is encapsulated in the PVC card of a standard, and chip and antenna do not have any exposed parts.Be a new technology that grows up recent years in the world, its success REID and IC-card technology are combined, be through with passive (non-transformer in the card) contacts this difficult problem with exempting from, and is a quantum jump of field of electronic devices.Card near the read write line surface, is finished data write operation by the transmission of radiowave in certain distance scope (being generally 5-10mm).
Finish read-write operation by radiowave between untouchable IC-card and the card reader.Communication between the two is 125Kz frequently.Untouchable IC-card itself is a passive card, when read write line to sticking into capable read-write operation is, the signal that read write line sends is made up of two parts stack: a part is a power supply signal, after this signal is received by clamping, supplies with chip operation with the transient energy of L/C generation of itself.Another part then is instruction and data-signal, and commander's chip is finished the reading of data, storage etc., and return signal gives read write line, finishes read-write operation one time.Read write line is then generally by single-chip microcomputer, and special intelligent module and antenna are formed, and is furnished with the communication interface with PC, LPT, and I/O mouths etc. are so that be applied to different fields.
Compare with Contact Type Ic Card, contactless card has the following advantages:
1, do not have machinery between the high non-contact IC card of reliability and the read write line and contact, avoided owing to contact and read and write the various faults that produce.For example: because rough plug-in card, non-card foreign object inserts, the fault that dust or greasy dirt cause loose contact to cause.In addition, the no exposed die in contactless card surface need not be worried problems such as chip comes off, electrostatic breakdown, crooked damage, both has been convenient to card print, has improved the dependability of card again.
2, easy to operate.Because the noncontact communication, read write line just can be operated card in the 10CM scope, thus needn't the plug card, very convenient user's use.Contactless card does not have directivity when using, and card can skim over the read write line surface in any direction, but both complete operations, and this has improved the speed of each use greatly.
3, can be suitable for multiple application.The sequence number of contactless card is unique, and manufacturing firm solidifies this sequence number before product export, can not change again.Adopt bi-directional verification mechanism between contactless card and the read write line, i.e. the legitimacy of read write line checking IC-card, IC-card is also verified the legitimacy of read write line simultaneously.
4, encryption performance is good.Non-contact IC card is by the IC chip, and induction antenna is formed, and is sealed in the standard PVC card no exposed parts fully.The read-write process of non-contact IC card is usually by finishing read-write operation by radiowave between non-contact IC card and the read write line.
Non-contact IC card itself is passive body, when read write line when sticking into capable read-write operation, the signal that read write line sends is made up of two parts stack: a part is a power supply signal, this signal by the clamping receipts after, produce resonance with the L/C of itself, produce a transient energy and supply with chip operation.Another part then is a combined data signal, and commander's chip is finished data, modification, storage etc., and returns to read write line.By the formed read-write system of non-contact IC card, no matter be hardware configuration, or operating process has all obtained very big simplification, simultaneously by means of advanced management software, the mode of operation of off line all makes the reading and writing data process more simple.
At present, radio-frequency card is widely used in water meter, calorimeter, gas meter, flow meter, public transport automatic ticketing, parking, and multiple occasions such as meal, work attendance and gate inhibition are sold in charge, dining room automatically, and to radio frequency stick into the circuit application of row read-write maximum be to constitute in conjunction with its peripheral components by integrated device U2270B, as shown in Figure 2.Because U2270B can only be in the voltage range work of 4.5V～5.5V, if the user uses U2270B to design the read system, then need to be operated in 5V or high voltage more, system works under this voltage, power consumption uprises, the effective operating voltage of supplying cell interval also seems narrow, and will consider owing to battery discharge inhomogeneous caused problems such as serviceable life of battery is short.U2270B adopts built-in RC oscillatory circuit that the reference clock of radio frequency is provided, and the frequency characteristic of RC oscillatory circuit is relatively poor aspect stability and temperature coefficient, so need on the RF pin, add a frequency calibration resistance in the read/write circuit of U2270B, when being necessary this resistance is adjusted just and can be reached desirable output frequency, in the process of producing, just need before product export, test and adjust like this, increase the complicacy of production procedure widely the frequency of radio frequency.The sky line drive circuit of U2270B adopts direct-coupled mode, a direct result of doing like this is exactly when there is error in the internal clocking frequency of the natural frequency of the resonant tank of outside serial connection and U2270B, actual transmission frequency on the antenna also can change, and influences the read-write of card.
In addition, adopt logical device gate circuit 4060 in addition, operational amplifier TL062, LM358, ST393 etc., the read-write card circuit of composition since device many, circuit structure relative complex, its intrinsic shortcoming be failure rate than higher, be unfavorable for reduced volume.
Above-mentioned circuit all is directly to be in running status after the energising, and the running status of himself particularly device fault, self the power consumption of circuit is uncontrollable, is difficult to the low power operation of accomplishing that battery power supply system is long-term.
Summary of the invention
The present invention is directed to above problem, provide a kind of and can reduce a kind of of operation power consumption significantly by supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming.
Technical scheme of the present invention is: comprise the MCU with 1-8 pin that supports the nanowatt technology, it comprises that also resonant circuit, detecting circuit, reference voltage with the radio-frequency card communication provide circuit, comparison interface and power-management interface;
Described resonant circuit comprises the inductance L 1 and the capacitor C 1 of mutual serial connection;
Described detecting circuit comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end links to each other respectively at the positive terminal of described inductance L 1 and diode D1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 links to each other respectively at the negative pole end of diode D1 and an end of resistance R 5; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, the B contact is arranged;
Described reference voltage provides circuit to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in the A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact respectively;
Described relatively interface comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface comprises 1,8 pin of described MCU;
4 pin of described MCU connect described R14.
It also comprises the amplifying circuit between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit comprises the triode Q1 of NPN type, triode Q2, resistance R 1, resistance R 2, resistance R 14 and the reference voltage source of positive-negative-positive, one end of resistance R 14 links to each other with 4 pin of described MCU, the other end of resistance R 14 is respectively with the B utmost point of triode Q1, triode Q2 and connect, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of the E utmost point of triode Q1 and triode Q2, between resistance R 1 and the resistance R 2 the C contact is arranged, described C contact connects described inductance L 1.
It also comprises the external unit connector, and described external unit connector is 6,7 pin of described MCU.
Circuit of the present invention, adopting by the MCU that supports the nanowatt technology is the control core of circuit, read/write circuit contains signal and energy emission, signal receiving module, signal processing module; Data and energy emission, receiver module contain coil L1, C1, and the 125Kz that MCU produces, the data that the manchester mode is modulated are exported through the complementary power of Q1, Q2 by its 4pin (pin).L1, C1 resonance are in 125Kz, and L1 is emittance and the modulating data that sends data, read according to the variation reception of its load on the other hand on the one hand; D1, electric capacity (C2, C3, C4) and resistance (R4, R5) are the AM detection, C2, C3, C4, R4, R5 form filtering circuit, link MCU 3Pin through C3, and R7, R8, R6 are the reference cell of MCU internal comparator, give MCU 2, the benchmark that provides of 3Pin, the MCU benchmark demodulates data.3pin also carries out the ad conversion in the gap of data-signal, differentiate and disturb and data, and interfering data is carried out filtering, improves the anti-interference of data transmission.MCU 2,3,4pin is placed in numeral mouthful state during non-read-write, carried out channel check before read-write, when finding not close read/write circuit when being inconsistent with original state, provides alarm, prolonged the serviceable life of battery supply set as much as possible.After testing, operating voltage of the present invention is 2.7-5v, and working current 4.5mA, quiescent current are 10nA, is example to be applied to intellectual water meter, and copy January one, and power consumption can be guaranteed the battery that intellectual water meter is same in nanowatt level level, works the longer time.In addition, can also expand and be applied to intelligent gas meter, ammeter, mass transit card etc.
Description of drawings
Fig. 1 is a circuit diagram of the present invention
Fig. 2 is the circuit diagram of another embodiment of the present invention
1 is resonant circuit among the figure, the 2nd, and detecting circuit, the 3rd, reference voltage provides circuit, and the 4th, comparison interface, the 5th, external unit connector, the 6th, amplifying circuit, the 7th, power-management interface, the 8th, MCU, the 9th, radio-frequency card.
Fig. 3 is the circuit diagram of background technology of the present invention
Embodiment
Circuit of the present invention comprises the MCU8 with 1-8 pin that supports the nanowatt technology as shown in Figure 1, and it comprises that also resonant circuit 1, detecting circuit 2, reference voltage with the radio-frequency card communication provides circuit 3, relatively interface 4 and power-management interface 7;
Described resonant circuit 1 comprises the inductance L 1 and the capacitor C 1 of mutual serial connection; Inductance L 1 is carried out communication with radio-frequency card 9.
Described detecting circuit 2 comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end links to each other respectively at the positive terminal of described inductance L 1 and diode D1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 links to each other respectively at the negative pole end of diode D1 and an end of resistance R 5; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, the B contact is arranged;
Described reference voltage provides circuit 3 to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in the A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact respectively;
Described relatively interface 4 comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface 7 comprises 1,8 pin of described MCU;
4 pin of described MCU8 connect described inductance L 1.
Another embodiment of the present invention as shown in Figure 2, it also comprises the amplifying circuit between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 links to each other with 4 pin of described MCU, the other end of resistance R 14 respectively with triode Q1, the B utmost point of triode Q2 also connects, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of the E utmost point of triode Q1 and triode Q2, between resistance R 1 and the resistance R 2 the C contact is arranged, described C contact connects described inductance L 1.
It also comprises external unit connector 5, and described external unit connector 5 is 6,7 pin of described MCU.
Each modularity circuit of built-up circuit is formed and function:
Resonant circuit 1:L1, C1 form the 125KZ resonant circuit, L1 is emittance, transmission modulating data on the one hand, on the other hand, in card is in radiation area, and after correctly receiving order data, return data in the card is by the load as L1, C1 resonant tank of the coil of inside, load the modulated data message in inside that directly reflects of variation.The data modulated signal that L1, the output of C1 tie point receive.
Claims (3)
1. one kind by supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming, comprise the MCU with 1-8 pin (8) that supports the nanowatt technology, it is characterized in that it comprises that also resonant circuit (1), detecting circuit (2), reference voltage with the radio-frequency card communication provides circuit (3), relatively interface (4) and power-management interface (7);
Described resonant circuit (1) comprises the inductance L 1 and the capacitor C 1 of mutual serial connection;
Described detecting circuit (2) comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end links to each other respectively at the positive terminal of described inductance L 1 and diode D1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 links to each other respectively at the negative pole end of diode D1 and an end of resistance R 5; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, the B contact is arranged;
Described reference voltage provides circuit (3) to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in the A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact respectively;
Described relatively interface (4) comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface (7) comprises 1,8 pin of described MCU;
4 pin of described MCU (8) connect described inductance L 1.
2. according to claim 1 a kind of by supporting nanowatt technology MCU control and the radio-frequency card read/write circuit of forming, it is characterized in that, it also comprises the amplifying circuit (6) between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit (6) comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 links to each other with 4 pin of described MCU, the other end of resistance R 14 respectively with triode Q1, the B utmost point of triode Q2 also connects, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of the E utmost point of triode Q1 and triode Q2, between resistance R 1 and the resistance R 2 the C contact is arranged, described C contact connects described inductance L 1.
3. a kind of radio-frequency card read/write circuit of being controlled and being formed by support nanowatt technology MCU according to claim 1 is characterized in that it also comprises external unit connector (5), and described external unit connector (5) is 6,7 pin of described MCU.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010276130.XA CN101957926B (en) | 2010-09-09 | 2010-09-09 | Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010276130.XA CN101957926B (en) | 2010-09-09 | 2010-09-09 | Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology |
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| CN101957926A true CN101957926A (en) | 2011-01-26 |
| CN101957926B CN101957926B (en) | 2014-04-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102938084A (en) * | 2012-11-29 | 2013-02-20 | 深圳市华旭科技开发有限公司 | Read-write method and circuit of low-frequency radio frequency card of intelligent water meter |
| CN104299024A (en) * | 2013-07-19 | 2015-01-21 | 上海华虹宏力半导体制造有限公司 | Non-contact IC card demodulation circuit |
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| CN201156257Y (en) * | 2008-02-20 | 2008-11-26 | 福建师范大学 | Data reading circuit for low frequency radio frequency IC card suitable for low voltage and corresponding apparatus |
| CN201387611Y (en) * | 2008-10-23 | 2010-01-20 | 盛惠珍 | Radio-frequency card reader-writer communication circuit |
| CN201820234U (en) * | 2010-09-09 | 2011-05-04 | 扬州恒信仪表有限公司 | Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology |
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| CN101149817A (en) * | 2006-09-18 | 2008-03-26 | 王向乔 | Non-contact infrared IC card |
| CN201017327Y (en) * | 2007-04-05 | 2008-02-06 | 田靖 | Wireless radio frequency recognizing card reading device |
| CN201156257Y (en) * | 2008-02-20 | 2008-11-26 | 福建师范大学 | Data reading circuit for low frequency radio frequency IC card suitable for low voltage and corresponding apparatus |
| CN201387611Y (en) * | 2008-10-23 | 2010-01-20 | 盛惠珍 | Radio-frequency card reader-writer communication circuit |
| CN201820234U (en) * | 2010-09-09 | 2011-05-04 | 扬州恒信仪表有限公司 | Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102938084A (en) * | 2012-11-29 | 2013-02-20 | 深圳市华旭科技开发有限公司 | Read-write method and circuit of low-frequency radio frequency card of intelligent water meter |
| CN102938084B (en) * | 2012-11-29 | 2016-08-24 | 深圳市华旭科技开发有限公司 | The reading/writing method of the low-frequency radio frequency card of intellectual water meter and circuit |
| CN104299024A (en) * | 2013-07-19 | 2015-01-21 | 上海华虹宏力半导体制造有限公司 | Non-contact IC card demodulation circuit |
| CN104299024B (en) * | 2013-07-19 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | The demodulator circuit of contactless IC card |
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| CN101957926B (en) | 2014-04-09 |
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