CN101957926B - Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology - Google Patents
Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology Download PDFInfo
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- CN101957926B CN101957926B CN201010276130.XA CN201010276130A CN101957926B CN 101957926 B CN101957926 B CN 101957926B CN 201010276130 A CN201010276130 A CN 201010276130A CN 101957926 B CN101957926 B CN 101957926B
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Abstract
The invention provides a radio-frequency card reading and writing circuit controlled and formed by an MCU supporting a nanoWatt technology, which relates to a radio-frequency card reading and writing circuit capable of greatly reducing the power consumption in operation. The radio-frequency card reading and writing circuit comprises an MCU which supports the nanoWatt technology and has 1-8 pins, and also comprises a resonant circuit, a detection circuit, a reference voltage supplying circuit, a comparison interface and a power management interface which are communicated with a radio-frequency card, wherein the resonant circuit comprises an inductor L1 and a capacitor C1 which are mutually connected in series; the detection circuit comprises a diode D1, a capacitor C2, a capacitor C3, a capacitor C4 and a resistor R5; the reference voltage supplying circuit comprises a resistor R6, a resistor R7, a resistor R8, a capacitor C5 and a reference voltage source; the comparison interface comprises a pin 2 and a pin 3 of the MCU, wherein the pin 2 is connected with an A connection point, and the pin 3 is connected with a B connection point; the power management interface comprises a pin 1 and a pin 8 of the MCU; and a pin 4 of the MCU is connected with the R14. In the invention, the MCU supporting the nanoWatt technology is taken as a kernel for inspecting the circuit before reading and writing; and when the inspection result does not accord with the initial state, the reading and writing circuit is switched off, and a warning prompt is given, thereby prolonging the battery life.
Description
Technical field
The present invention relates to a kind of RF Signal circuit, relate in particular to a kind of RF Signal circuit of supporting the MCU of nanowatt technology to realize low-power consumption duty that utilizes.
Background technology
Non-contact IC card claims again radio-frequency card, IC chip, induction antenna, consists of, and is encapsulated in the PVC card of a standard, and chip and antenna are without any exposed parts.Be the new technology growing up recent years in the world, it successfully combines REID and IC-card technology, and be through with passive (non-transformer in card) and this difficult problem of contact-free, be a quantum jump of field of electronic devices.Card near read write line surface, completes the read-write operation of data in certain distance scope (being generally 5-10mm) by the transmission of radiowave.
Between non-contact IC card and card reader, by radiowave, complete read-write operation.Communication between the two is 125Kz frequently.Non-contact IC card itself is passive card, when read write line carries out read-write operation to card, be, the signal that read write line sends is comprised of two parts stack: a part is power supply signal, after this signal is received by clamping, supplies with chip operation with the transient energy of L/C generation of itself.Another part is instruction and data-signal, and commander's chip completes the reading of data, storage etc., and return signal is to read write line, completes read-write operation one time.Read write line is generally by single-chip microcomputer, and special intelligent module and antenna form, and is furnished with the communication interface with PC, LPT, and I/O mouths etc., to be applied to different fields.
Compare with Contact Type Ic Card, contactless card has the following advantages:
1, between the high non-contact IC card of reliability and read write line, machinery-free contacts, and has avoided the various faults that produce due to contact read-write.For example: due to rough plug-in card, non-card foreign object inserts, the fault that dust or greasy dirt cause loose contact to cause.In addition, the problems such as chip comes off, electrostatic breakdown, crooked damage, without exposed die, need not be worried in contactless card surface, have both been convenient to card print, have improved again the dependability of card.
2, easy to operate.Due to non-contact communication, read write line just can operate card within the scope of 10CM, thus needn't plug card, and very convenient user uses.When contactless card is used, there is no directivity, card can skim over read write line surface in any direction, both can complete operation, and this has improved the speed of each use greatly.
3, can be suitable for multiple application.The sequence number of contactless card is unique, and manufacturing firm solidifies this sequence number before product export, can not change again.Between contactless card and read write line, adopt bi-directional verification mechanism, i.e. the legitimacy of read write line checking IC-card, IC-card is also verified the legitimacy of read write line simultaneously.
4, encryption performance is good.Non-contact IC card is by IC chip, and induction antenna forms, and is sealed in completely in a standard PVC card, without exposed parts.The read-write process of non-contact IC card, conventionally by completing read-write operation by radiowave between non-contact IC card and read write line.
Non-contact IC card itself is passive body, when read write line carries out read-write operation to card, the signal that read write line sends is comprised of two parts stack: a part is power supply signal, after this signal is received by clamping, produce resonance with the L/C of itself, produce a transient energy and supply with chip operation.Another part is combined data signal, and commander's chip completes data, modification, storage etc., and returns to read write line.By the formed read-write system of non-contact IC card, no matter be hardware configuration, or operating process has all obtained very large simplification, simultaneously by means of advanced management software, the mode of operation of off line, all makes reading and writing data process more simple.
At present, radio-frequency card is widely used in water meter, calorimeter, gas meter, flow meter, public transport automatic ticketing, parking automatic charging, dining room and sells the multiple occasions such as meal, work attendance and gate inhibition, and the circuit application that radio frequency card is read and write maximum be to be formed in conjunction with its peripheral components by integrated device U2270B, as shown in Figure 2.Because U2270B can only be in the voltage range work of 4.5V～5.5V, if user designs read/write base station system with U2270B, need to be operated in 5V or high voltage more, system is worked under this voltage, power consumption uprises, the effective operating voltage of supplying cell interval also seems narrow, and will consider because battery discharge inhomogeneous caused the problems such as serviceable life of battery is short.U2270B adopts built-in RC oscillatory circuit that the reference clock of radio frequency is provided, and the frequency characteristic of RC oscillatory circuit is poor aspect stability and temperature coefficient, so need to add a frequency calibration resistance in the read/write circuit of U2270B on RF pin, when being necessary this resistance is adjusted just and can be reached desirable output frequency, in the process of producing, just need to before product export, the frequency of radio frequency be tested and be adjusted like this, increase widely the complicacy of production procedure.The antenna drive circuit of U2270B adopts direct-coupled mode, a direct result of doing is like this exactly when the natural frequency of resonant tank of outside serial connection and the internal clocking frequency of U2270B exist error, actual transmission frequency on antenna also can change, and affects the read-write of card.
In addition, adopt in addition logical device gate circuit 4060, operational amplifier TL062, LM358, ST393 etc., the read-write card circuit of composition is because device is many, circuit structure relative complex, its intrinsic shortcoming is that failure rate is higher, is unfavorable for reduced volume.
Above-mentioned circuit be all after energising directly in running status, the running status of himself particularly device fault, self the power consumption of circuit is uncontrollable, is difficult to the low power operation of accomplishing that battery power supply system is long-term.
Summary of the invention
The present invention is directed to above problem, a kind of a kind of RF Signal circuit by supporting that nanowatt technology MCU controls and forms that can significantly reduce operation power consumption is provided.
Technical scheme of the present invention is: comprise the MCU with 1-8 pin that supports nanowatt technology, it also comprises with resonant circuit, detecting circuit, the reference voltage of radio-frequency card communication provides circuit, comparison interface and power-management interface;
Described resonant circuit comprises inductance L 1 and the capacitor C 1 of mutual serial connection;
Described detecting circuit comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end is connected with the positive terminal of diode D1 respectively at described inductance L 1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 is connected with one end of resistance R 5 respectively at the negative pole end of diode D1; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, there is B contact;
Described reference voltage provides circuit to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects respectively described B contact;
Described relatively interface comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface comprises 1,8 pin of described MCU;
4 pin of described MCU connect described R14.
It also comprises the amplifying circuit between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 is connected with 4 pin of described MCU, the other end of resistance R 14 is respectively with the B utmost point of triode Q1, triode Q2 and connect, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of triode Q1 and the E utmost point of triode Q2, between resistance R 1 and resistance R 2, have C contact, described C contact connects described inductance L 1.
It also comprises external unit connector, 6,7 pin that described external unit connector is described MCU.
Circuit of the present invention, the control core that to adopt by the MCU that supports nanowatt technology be circuit, read/write circuit contains signal and energy transmitting, signal receiving module, signal processing module; The transmitting of data and energy, receiver module contain coil L1, C1, the 125Kz that MCU produces, the data that manchester mode is modulated by its 4pin (pin) through the complementary power stage of Q1, Q2.L1, C1 resonance are in 125Kz, and L1 is emittance and the modulating data that sends data, read according to the variation reception of its load on the other hand on the one hand; D1, electric capacity (C2, C3, C4) and resistance (R4, R5) are AM detection, C2, C3, C4, R4, R5 form filtering circuit, through C3, link MCU 3Pin, R7, R8, R6 are the reference cell of MCU internal comparator, give MCU 2, the benchmark that provides of 3Pin, MCU benchmark demodulates data.3pin also carries out ad conversion in the gap of data-signal, differentiates and disturbs and data, and interfering data is carried out to filtering, improves the anti-interference of data transmission.MCU 2,3,4pin is placed in numeral mouthful state during non-read-write, before read-write, carries out channel check, when finding to be inconsistent with original state, do not close read/write circuit, provides alarm, extended as much as possible the serviceable life of battery supply set.After testing, operating voltage of the present invention is 2.7-5v, working current 4.5mA, and quiescent current is 10nA, take and is applied to intellectual water meter as example, and copy January one, and power consumption, in nanowatt level level, can be guaranteed the battery that intellectual water meter is same, works the longer time.In addition, can also expand and be applied to Intelligent gasometer, ammeter, mass transit card etc.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present invention
Fig. 2 is the circuit diagram of another embodiment of the present invention
In figure, 1 is resonant circuit, the 2nd, and detecting circuit, the 3rd, reference voltage provides circuit, and the 4th, comparison interface, the 5th, external unit connector, the 6th, amplifying circuit, the 7th, power-management interface, the 8th, MCU, the 9th, radio-frequency card.
Fig. 3 is the circuit diagram of background technology of the present invention
Embodiment
Circuit of the present invention as shown in Figure 1, comprises the MCU8 with 1-8 pin that supports nanowatt technology, and it also comprises with resonant circuit 1, detecting circuit 2, the reference voltage of radio-frequency card communication provides circuit 3, compares interface 4 and power-management interface 7;
Described resonant circuit 1 comprises inductance L 1 and the capacitor C 1 of mutual serial connection; Inductance L 1 is carried out communication with radio-frequency card 9.
Described detecting circuit 2 comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end is connected with the positive terminal of diode D1 respectively at described inductance L 1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 is connected with one end of resistance R 5 respectively at the negative pole end of diode D1; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, there is B contact;
Described reference voltage provides circuit 3 to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects respectively described B contact;
Described relatively interface 4 comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface 7 comprises 1,8 pin of described MCU;
4 pin of described MCU8 connect described inductance L 1.
Another embodiment of the present invention as shown in Figure 2, it also comprises the amplifying circuit between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 is connected with 4 pin of described MCU, the other end of resistance R 14 respectively with triode Q1, the B utmost point of triode Q2 also connects, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of triode Q1 and the E utmost point of triode Q2, between resistance R 1 and resistance R 2, there is C contact, described C contact connects described inductance L 1.
It also comprises external unit connector 5,6,7 pin that described external unit connector 5 is described MCU.
Each modularity the electric circuit constitute and function of built-up circuit:
Resonant circuit 1:L1, C1 form 125KZ resonant circuit, L1 is emittance, transmission modulating data on the one hand, on the other hand, when card is in radiation area, and correctly receive after order data, return data in card is the load as L1, C1 resonant tank by inner coil, load the modulated data message in inside that directly reflects of variation.The data modulated signal that L1, the output of C1 tie point receive.
Claims (3)
1. one kind by the RF Signal circuit of supporting that nanowatt technology MCU controls and forms, comprise the MCU with 1-8 pin (8) that supports nanowatt technology, it is characterized in that, it also comprises with resonant circuit (1), detecting circuit (2), the reference voltage of radio-frequency card communication provides circuit (3), compares interface (4) and power-management interface (7);
Described resonant circuit (1) comprises inductance L 1 and the capacitor C 1 of mutual serial connection;
Described detecting circuit (2) comprises diode D1, capacitor C 2, capacitor C 3, capacitor C 4 and resistance R 5;
One end ground connection of described capacitor C 1, the other end is connected with the positive terminal of diode D1 respectively at described inductance L 1; One end of described capacitor C 2 and resistance R 4 is ground connection respectively, and the other end of capacitor C 2 and resistance R 4 is connected with one end of resistance R 5 respectively at the negative pole end of diode D1; Capacitor C 3 and capacitor C 4 are serially connected in the rear end of resistance R 5, the tail end ground connection of capacitor C 4; Between capacitor C 3 and capacitor C 4, there is B contact;
Described reference voltage provides circuit (3) to comprise resistance R 6, resistance R 7, resistance R 8, capacitor C 5 and reference voltage source; One end of resistance R 6, resistance R 7, resistance R 8 and capacitor C 5 is connected in A contact jointly, the other end ground connection of capacitor C 5, and the other end of resistance R 8 connects described reference voltage source, the other end ground connection of resistance R 7, the other end of resistance R 6 connects described B contact;
Described relatively interface (4) comprises 2,3 pin of described MCU, and described 2 pin connect described A contact, and described 3 pin connect described B contact;
Described power-management interface (7) comprises 1,8 pin of described MCU;
4 pin of described MCU (8) connect described inductance L 1.
2. according to claim 1 a kind of by supporting nanowatt technology MCU control and the RF Signal circuit forming, it is characterized in that, it also comprises the amplifying circuit (6) between 4 pin that are serially connected in inductance L 1 and described MCU, described amplifying circuit (6) comprises the triode Q1 of NPN type, the triode Q2 of positive-negative-positive, resistance R 1, resistance R 2, resistance R 14 and reference voltage source, one end of resistance R 14 is connected with 4 pin of described MCU, the other end of resistance R 14 respectively with triode Q1, the B utmost point of triode Q2 also connects, the C utmost point ground connection of triode Q2, resistance R 1 and resistance R 2 are serially connected between the E utmost point of triode Q1 and the E utmost point of triode Q2, between resistance R 1 and resistance R 2, there is C contact, described C contact connects described inductance L 1.
3. a kind of RF Signal circuit by supporting that nanowatt technology MCU controls and forms according to claim 1, is characterized in that, it also comprises external unit connector (5), 6,7 pin that described external unit connector (5) is described MCU.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010276130.XA CN101957926B (en) | 2010-09-09 | 2010-09-09 | Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010276130.XA CN101957926B (en) | 2010-09-09 | 2010-09-09 | Radio-frequency card reading and writing circuit controlled and formed by MCU supporting nanoWatt technology |
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| CN101957926A CN101957926A (en) | 2011-01-26 |
| CN101957926B true CN101957926B (en) | 2014-04-09 |
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| CN102938084B (en) * | 2012-11-29 | 2016-08-24 | 深圳市华旭科技开发有限公司 | The reading/writing method of the low-frequency radio frequency card of intellectual water meter and circuit |
| CN104299024B (en) * | 2013-07-19 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | The demodulator circuit of contactless IC card |
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| CN201820234U (en) * | 2010-09-09 | 2011-05-04 | 扬州恒信仪表有限公司 | Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology |
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| CN101149817A (en) * | 2006-09-18 | 2008-03-26 | 王向乔 | Non-contact infrared IC card |
| CN201017327Y (en) * | 2007-04-05 | 2008-02-06 | 田靖 | Wireless radio frequency recognizing card reading device |
| CN201156257Y (en) * | 2008-02-20 | 2008-11-26 | 福建师范大学 | Data reading circuit for low frequency radio frequency IC card suitable for low voltage and corresponding apparatus |
| CN201387611Y (en) * | 2008-10-23 | 2010-01-20 | 盛惠珍 | Radio-frequency card reader-writer communication circuit |
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| CN201820234U (en) * | 2010-09-09 | 2011-05-04 | 扬州恒信仪表有限公司 | Radio-frequency card reading-writing circuit controlled by and comprising MCU (microprogrammed control unit) supporting nanoWatt technology |
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