CN201797307U - Protection control circuit - Google Patents
Protection control circuit Download PDFInfo
- Publication number
- CN201797307U CN201797307U CN2009202913095U CN200920291309U CN201797307U CN 201797307 U CN201797307 U CN 201797307U CN 2009202913095 U CN2009202913095 U CN 2009202913095U CN 200920291309 U CN200920291309 U CN 200920291309U CN 201797307 U CN201797307 U CN 201797307U
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- circuit
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- protection
- terminal
- control circuit
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Abstract
The utility model relates to a protection control circuit, in particular to a protection control circuit, which is used for connecting power semiconductors, and belongs to the field of power semiconductors. The utility model further relates to a circuit provided with power semiconductors connected by the protection control circuit. The protection control circuit for connecting a first master semiconductor is provided according to an embodiment. The first master semiconductor is provided with a first master collector terminal, a first gate terminal and a first master emitter terminal. The protection control circuit is provided with a first static protection circuit. The first static protection circuit is provided with a first auxiliary semiconductor provided with a first auxiliary collector terminal, a first auxiliary gate terminal and a first auxiliary emitter terminal. The first auxiliary collector terminal can be connected with the first master collector terminal.
Description
Technical field
The utility model relates to the power semiconductor field.The utility model relates in particular to a kind of protection control circuit that is used to connect power semiconductor.The utility model also relates to a kind of circuit, has the power semiconductor that connects by the protection control circuit.
Background technology
The relatively more novel application in power semiconductor technologies field shows: use series circuit that the higher voltage value is provided, the series circuit that especially uses a plurality of power semiconductors, for example IGBT (IGBT=insulated-gate bipolartransistor insulated gate bipolar transistor) to form.The known circuit that all uses resistance and electric capacity to constitute in these power semiconductor series circuits comes balanced asymmetric dividing potential drop.But the electrical loss of these measures is than higher.
The utility model content
The purpose of this utility model is to provide a kind of circuit that is used for connecting one or more power semiconductors, so that improve the switching characteristic of power semiconductor and improve the partial pressure properties of the series circuit that a plurality of power semiconductors form.
According to a kind of form of implementation of the present utility model, a kind of protection control circuit that is used for connecting first main semiconductor is provided, described main semiconductor comprises the first main collector terminal, the first main grid gate terminal and the first main emitter terminal; Described protection control circuit has the first static protection circuit.Here; the described first static protection circuit has first semiconductor-assisted; the latter comprises the first supplementary set electrode terminal, the first auxiliary grid terminal and the first auxiliary emitter electrode terminal, and the described first supplementary set electrode terminal can link to each other with the first main collector terminal.
Provide protective circuit to power semiconductor, described power semiconductor can utilize its three terminals to be connected on the protective circuit.Improved the switching characteristic of power semiconductor by this connection.Can prevent that also power semiconductor from suffering overvoltage.
According to a kind of form of implementation of the present utility model, semiconductor-assisted is a kind of IGBT.
Insulated gate bipolar transistor (insulated-gate bipolar transistor abbreviates IGBT as) is a kind of semiconductor device that electric and electronic technical field is widely used, and can use it for execution switching manipulation especially rapidly.Also power semiconductor or main semiconductor can be designed to the IGBT form.
According to a kind of form of implementation of the present utility model, the first static protection circuit has to be arranged in from the first auxiliary emitter electrode terminal and points to first diode among the conducting direction of the first supplementary set electrode terminal.
According to a kind of form of implementation of the present utility model, the first static protection circuit has first auxiliary resistance that is arranged between the first auxiliary grid terminal and the first auxiliary emitter electrode terminal.
According to a kind of form of implementation of the present utility model, the protection control circuit has the dynamic protection circuit that links to each other with the first static protection circuit, and described dynamic protection circuit has first electric capacity.
According to a kind of form of implementation of the present utility model, the protection control circuit has the static protection circuit of a plurality of mutual series connection.
According to a kind of form of implementation of the present utility model, that resistance is in parallel with first electric capacity.
The Ohmic resistance in parallel with electric capacity can influence the charging and the discharge of electric capacity, thereby can influence the dynamic characteristic of protection control circuit.
According to a kind of form of implementation of the present utility model, the protection control circuit has the gate protection switching circuit.
The gate protection switching circuit can be connected on the grid of first main semiconductor,, and prevent that main semiconductor from suffering overvoltage so that improve the control of main semiconductor.
According to a kind of form of implementation of the present utility model, the gate protection switching circuit can be arranged between the first main grid gate terminal and the first main emitter terminal.
Can influence the grid-emitter voltage of main semiconductor by this way.
According to a kind of form of implementation of the present utility model, the gate protection switching circuit links to each other with dynamic protection circuit.
According to the utility model, dynamic protection circuit and gate switch circuit are coordinated mutually, thereby improve the switching characteristic of main semiconductor.
According to a kind of form of implementation of the present utility model, the gate protection switching circuit has MOSFET.
MOSFET is a kind of positive means, can the MOSFET-gate terminal be linked to each other with the emitter of main semiconductor by Ohmic resistance.
According to a kind of form of implementation of the present utility model, the gate protection switching circuit has the network that is made of diode and resistance.
According to a kind of form of implementation of the present utility model, the gate protection switching circuit has blocking circuit.
This blocking circuit can have two back ofs the body and connect to prevent superpotential Zener diode.
According to a kind of form of implementation of the present utility model; first main semiconductor is provided in circuit; this first main semiconductor has the first main collector terminal, the first main grid gate terminal and the first main emitter terminal, arranges the first protection control circuit between the first main collector terminal and the first main emitter terminal.
According to a kind of form of implementation of the present utility model; second main semiconductor is provided in circuit; this second main semiconductor has the second main collector terminal, the second main grid gate terminal and the second main emitter terminal; between the second main collector terminal and the second main emitter terminal, arrange the second protection control circuit, and the first main emitter terminal links to each other with the second main collector terminal.
Here can stipulate that the described first protection control circuit is identical with the structure of the second protection control circuit.
Description of drawings
Hereinafter with reference to accompanying drawing embodiment of the present utility model is described in detail.
Accompanying drawing 1 is depicted as the series circuit of two power semiconductors, and these two power semiconductors are separately corresponding to an active clamping circuir and static state and dynamic circuit.
Accompanying drawing 2 is depicted as a kind of embodiment of the present utility model, has a kind of circuit that is used to connect a power semiconductor.
Accompanying drawing 3 is depicted as a kind of embodiment of the present utility model, has a kind of circuit that is used to connect two series connection power semiconductors.
Employed Reference numeral and implication thereof all are summarised among the list of numerals in the accompanying drawing.Every identical or similar part all identifies with identical Reference numeral in principle.
Embodiment
Accompanying drawing 1 is depicted as the series circuit of two power semiconductors 15,25, and these two power semiconductors are separately corresponding to 11,21 and static state of an active clamping circuir and dynamic circuit 12,22. Power semiconductor 15,25 is IGBT.The leakage current of IGBT depends on semi-conductive temperature, also requires parallel impedance to be used for carrying out the dividing potential drop of symmetry on the semiconductor of two series connection.Resistance 13,23 can be used for static equilibrium, and the circuit of also resistance 14,24 and electric capacity 19,29 being formed is used for dynamic equalization for this reason.Also can provide an active clamping circuir 11,21 to prevent that IGBT 15,25 from suffering overvoltage.
IGBT shown in the accompanying drawing 1 has 17,27 and emitter terminals 18,28 of 16,26, gate terminals of a collector terminal separately.When collector emitter voltage surpassed certain voltage threshold, the circuit 11,21 in parallel with collector electrode-grid of IGBT will activate.When these circuit 11,21 beginning conductings, this will cause IGBT 15,25 conductings.Can guarantee that like this collector emitter voltage is lower than a certain pre-set threshold (SOA=safe operating area safety operation area) all the time.
Accompanying drawing 2 is depicted as a kind of embodiment of the present utility model, has a kind of circuit 100 that is used to connect a power semiconductor 105.First of the utility model recommendation protects control circuit 110 can provide static and dynamic dividing potential drop on the one hand when reducing loss, and the grid voltage protection of power semiconductor 105 can be provided on the other hand.
For this reason, circuit 100 shown in the accompanying drawing 2 has the first protection control circuit 110, this protection control circuit be connected have a collector terminal 106, on the power semiconductor or first main semiconductor 105 of a gate terminal 107 and an emitter terminal 108.Protection control circuit 110 has the first static protection circuit 120, the second static protection circuit 130 and the 3rd static protection circuit 140, and these protective circuits interconnect, and form a series circuit.First protective circuit 110 shown in the accompanying drawing 2 also has one first dynamic protection circuit 150.First dynamic protection circuit 150 links to each other with a gate protection switching circuit 160.
The first static protection circuit 120 has one first semiconductor-assisted 121, and this semiconductor-assisted has one first supplementary set electrode terminal 122, the first auxiliary grid terminal 123 and one first an auxiliary emitter electrode terminal 124.In circuit 100, the first supplementary set electrode terminal 122 links to each other with the first main collector terminal 106 of first main semiconductor 105.The first auxiliary grid terminal 123 also links to each other with the first auxiliary emitter electrode terminal 124 of first semiconductor-assisted 121 by one first Ohmic resistance 125.All other semiconductor-assisteds of first semiconductor-assisted 121 and circuit 130,140 are IGBT.
The first static protection circuit 120, the second static protection circuit 130 and the 3rd static protection circuit 140 are same configuration.Also can be according to the embodiment shown in the accompanying drawing 2, with more other static protection circuit with shown in the static protection circuit be in series.Well imagine, also can in the circuit shown in the accompanying drawing 2 100, only use one or two this static protection circuit.
The principle of work and power of circuit is as follows shown in the accompanying drawing 2: the avalanche effect by auxiliary IGBT 121 reaches the Static Breakdown Voltage between supplementary set electrode 122 and the auxiliary emitter electrode 124.So the static dividing potential drop that realizes is compared with simple resistance circuit and can be reduced loss, because compared to the linear characteristic of pure Ohmic resistance circuit, one punctures element or semiconductor-assisted 121 then has nonlinear characteristic with the circuit that resistance 155 is combined into.According to the utility model, can be with being not grid-emitter voltage that suddenly mode (" soft ") influences main semiconductor 105.Also can be by the grid-emitter voltage of protection control circuit 110 protection main semiconductors 105.
Generally speaking, the protection control circuit 110 that the utility model is recommended has three different parts, i.e. a static part, a dynamic part and a grid unit 170 that is used to protect main semiconductor 105 grids 107.
Static part 120,130,140 comprises the auxiliary IGBT 121,131,141 with controlled avalanche breakdown characteristic.Auxiliary IGBT 121,131,141 utilizes an auxiliary grid resistance 125,135,145 to be in off state, and this resistance can remain on off state with IGBT, especially when switch when precipitous.Respectively that an outside idle running diode 126,136,146 is in parallel with semiconductor-assisted 121,131,141, so that in main IGBT 105 turn on process, the dynamic capacity 151 of dynamic protection circuit 150 is discharged.The compressive resistance of idle running diode 126,136,146 all is higher than the compressive resistance of auxiliary IGBT 121,131,141, thereby makes it be lower than the maximum blocking voltage that reaches rapidly when main IGBT 105 turn-offs.The static part 120,130,140 of circuit 110 can have the auxiliary IGBT 121,131,141 of some series connection.Three auxiliary IGBT as shown in Figure 2 for example can connect.When auxiliary IGBT 121,131,141 is in avalanche condition, will be by series resistance 155 restriction quiescent currents.The Static Breakdown Voltage of auxiliary IGBT 121,131,141 on the one hand should be high as far as possible, so that loss is remained on minimum degree, should make Static Breakdown Voltage be lower than the quiescent operation voltage of main IGBT 105 on the other hand, so that guarantee static dividing potential drop.Effective size of utilizing resistance 155 to regulate symmetrical current then.The suitable leakage current that is equal to or greater than main IGBT 105 of this electric current is so that advantageously carry out dividing potential drop.
The dynamic part 150 of circuit 110 has electric capacity 151.When main IGBT 105 is turned off and when forming voltage on the main IGBT 105, did not have electric current to flow through auxiliary IGBT121,131,141 before reaching quiescent voltage.When surpassing quiescent voltage (puncture voltages of=all auxiliary IGBT), just can use electric capacity 155 to suppress voltage and raise rapidly as additional collector electrode-grid capacitance of main IGBT 105.This attenuation makes that the switching characteristic of the main IGBT 105,205 of series connection is slack-off as shown in Figure 3.If one of them voltage climbing speed slightly faster than another voltage climbing speed, may overvoltage occur on a main semiconductor 105,205 therein.Dynamic part 150,250 with switching circuit 110,210 of electric capacity 151,252 can prevent this overvoltage because two main IGBT 105,205 medium velocities faster one can reach Static Breakdown Voltage in advance, the result is suppressed.
Gate protection circuit or gate protection switching circuit 160 have bypass functionality, this means the electric current that can limit among the gate driver circuit 170 that flows into main semiconductor 105.This restriction can stop by the circuit 110 autonomous main IGBT 105 of connection.Though this circuit should influence switching characteristic, should not connect IGBT automatically.This can be called " soft active-clamp " (Soft-Active-Clamping).The usefulness of soft active-clamp is: only a grid unit 170 can switch main IGBT; " active-clamp " is (Active-Clamp) then opposite, may be independently or uncontrollably change on off state.
By the voltage drop on a MOSFET 161 restriction series resistances 162.At this moment MOSFET 161 enters the breakdown conditions that is higher than a certain magnitude of voltage.Can suitably adjust the height of this voltage, make driving voltage can influence grid-emitter voltage of main IGBT 105, but not play a major role.First parallel diode 163 of gate protection switching circuit 160 can guarantee that the discharge by electric capacity 151 provides the idle running path in main IGBT 105 turn on process, wherein 164 intrinsic body diodes 165 that stop electric current to flow through MOSFET 161 of second diode of the series connection of gate protection switching circuit 160.The electric current that Zener diode 166,167 also suppresses from grid unit 170.The blocking voltage of these Zener diodes 166,167 is higher than grid-emitter voltage of main IGBT 105.
The utility model helps to reduce loss, realize compact design, the switching characteristic of IGBT is improved and can realize symmetrical dividing potential drop in the series circuit of power IGBT.
Accompanying drawing 3 is depicted as another kind of embodiment of the present utility model, has the circuit 100 that is used for connecting two series connection power semiconductors 105,205.Circuit 100 has structure identical first protective circuit 110 and second protective circuit 210.Protective circuit 110,210 is connected respectively to collector terminal, gate terminal and the emitter terminal of main semiconductor 105,205.Two main semiconductors 105,205 (being IGBT here) series connection forms an IGBT module 200.The principle of work and power at accompanying drawing 2 described circuit 100 also is applicable to accompanying drawing 3.First grid unit 170 shown in the accompanying drawing 3 links to each other with a gate protection switching circuit 160,260 respectively with second grid unit 270.Grid unit 170,270 has some Ohmic resistances and an amplifier.The break-make of the main IGBT 105 of grid unit 170 controls.The break-make of the main IGBT 205 of grid unit 270 controls.Here, circuit 110 can influence the driving voltage of grid unit 170,270, and the result also can influence the switching characteristic of main IGBT 105,205.
Need to replenish and to point out: " comprising " do not get rid of other element or step, and " one " do not get rid of exist a plurality of.It is further noted that: also can be used in combination with feature or the step of above-mentioned other embodiment with reference to described feature of above-mentioned some embodiment or step.The effect of being not limited to them of Reference numeral in the claim.
List of numerals
10 circuit
11 holding circuits
12 the dynamic and stalic state circuit
13 resistance
14 resistance
15 semiconductors
16 collector terminals
17 gate terminals
18 emitter terminals
19 electric capacity
21 protective circuits
22 dynamic and static circuits
23 resistance
24 resistance
25 semiconductors
26 collector terminals
27 gate terminals
28 emitter terminals
29 electric capacity
100 circuit
105 first main semiconductors
106 first main collector terminals
107 first main grid gate terminal
108 first main emitter terminals
110 first protection control circuits
120 first static protection circuit
121 first auxiliary IGBT
122 first supplementary set electrode terminals
123 first auxiliary grid terminals
124 first auxiliary emitter electrode terminals
125 first auxiliary grid resistance
126 first idle running diodes
130 second static protection circuit
131 second auxiliary IGBT
132 second supplementary set electrode terminals
133 second auxiliary grid terminals
134 second auxiliary emitter electrode terminals
135 second auxiliary grid resistance
136 second idle running diodes
140 the 3rd static protection circuit
141 the 3rd auxiliary IGBT
142 the 3rd supplementary set electrode terminals
143 the 3rd auxiliary grid terminals
144 the 3rd auxiliary emitter electrode terminals
145 the 3rd auxiliary grid resistance
146 the 3rd idle running diodes
150 dynamic protection circuits
151 electric capacity
155 resistance
160 gate protection switching circuits
161 MOSFET
162 series resistances
163 diodes
164 diodes
165 body diodes
166 Zener diodes
167 Zener diodes
168 resistances
170 first grid unit
205 second main semiconductors
206 second main collector terminals
207 second main grid gate terminal
208 second main emitter terminals
210 second protection control circuits
220 the 4th static protection circuit
230 the 5th static protection circuit
240 the 6th static protection circuit
250 second dynamic protection circuits
251 resistance
252 electric capacity
260 second grid protection switch circuit
270 second grid unit
Claims (15)
1. be used to connect the protection control circuit (110) of first main semiconductor (105); described first main semiconductor has the first main collector terminal (106); the first main grid gate terminal (107) and the first main emitter terminal (108); described protection control circuit has the first static protection circuit (120); the described first static protection circuit (120) has first semiconductor-assisted (121); this semiconductor-assisted has the first supplementary set electrode terminal (122); the first auxiliary grid terminal (123) and the first auxiliary emitter electrode terminal (124), the described first supplementary set electrode terminal (122) can link to each other with the first main collector terminal (106).
2. protection control circuit according to claim 1, wherein said semiconductor-assisted (121) is IGBT.
3. protection control circuit according to claim 1, the wherein said first static protection circuit (120) have to be arranged in from the first auxiliary emitter electrode terminal (124) and point to first diode (126) among the conducting direction of the first supplementary set electrode terminal (122).
4. according to each described protection control circuit in the claim 1～3, the wherein said first static protection circuit (120) has first auxiliary resistance (125) that is arranged between the first auxiliary grid terminal (123) and the first auxiliary emitter electrode terminal (124).
5. according to each described protection control circuit in the claim 1～3; wherein said protection control circuit (110) has the dynamic protection circuit (150) that links to each other with the first static protection circuit (120), and described dynamic protection circuit (150) has first electric capacity (151).
6. protection control circuit according to claim 5, wherein that a resistance (155) is in parallel with first electric capacity (151).
7. according to each described protection control circuit in the claim 1～3, wherein said protection control circuit (110) has the static protection circuit (120,130,140) of a plurality of mutual series connection.
8. according to each described protection control circuit in the claim 1～3, wherein said protection control circuit (110) has gate protection switching circuit (160).
9. protection control circuit according to claim 8, wherein said gate protection switching circuit (160) can be arranged between the first main grid gate terminal (107) and the first main emitter terminal (108).
10. protection control circuit according to claim 8, wherein said gate protection switching circuit (160) links to each other with dynamic protection circuit (150).
11. protection control circuit according to claim 8, wherein said gate protection switching circuit (160) has MOSFET (161).
12. protection control circuit according to claim 8, wherein said gate protection switching circuit (160) have the network that is made of diode and resistance (162,163,164,166,167,168).
13. protection control circuit according to claim 8, wherein said gate protection switching circuit (160) has blocking circuit (166).
14. have the circuit (100) of first main semiconductor (105); described first main semiconductor has the first main collector terminal (106), the first main grid gate terminal (107) and the first main emitter terminal (108), and wherein each described first protection control circuit (110) is arranged between the first main collector terminal (106) and the first main emitter terminal (108) in the claim 1～13.
15. circuit according to claim 14 (100); wherein said circuit (100) has second main semiconductor (205); described second main semiconductor has the second main collector terminal (206), the second main grid gate terminal (207) and the second main emitter terminal (208); wherein between the second main collector terminal (206) and the second main emitter terminal (208), be furnished with the second protection control circuit (210), and the first main emitter terminal (108) links to each other with the second main collector terminal (206).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09171101A EP2302798A1 (en) | 2009-09-23 | 2009-09-23 | Control for a semiconductor device |
| EP091711002 | 2009-09-23 | ||
| EP091711010 | 2009-09-23 | ||
| EP09171100A EP2302797A1 (en) | 2009-09-23 | 2009-09-23 | Control for a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201797307U true CN201797307U (en) | 2011-04-13 |
Family
ID=43027148
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202913095U Expired - Lifetime CN201797307U (en) | 2009-09-23 | 2009-10-16 | Protection control circuit |
| CN2009201780274U Expired - Lifetime CN201623694U (en) | 2009-09-23 | 2009-10-16 | Assembly controlling semiconductor element and large power circuit and device with assembly |
| CN2009201780310U Expired - Lifetime CN201663433U (en) | 2009-09-23 | 2009-10-16 | Protecting device for preventing short circuit caused in current transformer |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201780274U Expired - Lifetime CN201623694U (en) | 2009-09-23 | 2009-10-16 | Assembly controlling semiconductor element and large power circuit and device with assembly |
| CN2009201780310U Expired - Lifetime CN201663433U (en) | 2009-09-23 | 2009-10-16 | Protecting device for preventing short circuit caused in current transformer |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN201797307U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105305816A (en) * | 2015-11-09 | 2016-02-03 | 飞毛腿(福建)电子有限公司 | Method for realizing circuit control by adopting series connection of field-effect tubes |
-
2009
- 2009-10-16 CN CN2009202913095U patent/CN201797307U/en not_active Expired - Lifetime
- 2009-10-16 CN CN2009201780274U patent/CN201623694U/en not_active Expired - Lifetime
- 2009-10-16 CN CN2009201780310U patent/CN201663433U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105305816A (en) * | 2015-11-09 | 2016-02-03 | 飞毛腿(福建)电子有限公司 | Method for realizing circuit control by adopting series connection of field-effect tubes |
Also Published As
| Publication number | Publication date |
|---|---|
| CN201623694U (en) | 2010-11-03 |
| CN201663433U (en) | 2010-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110413 |