CN201751981U - Inner lead-embedded flipped chip inverted T-shaped lockhole heat slug external radiator packaging structure - Google Patents

Inner lead-embedded flipped chip inverted T-shaped lockhole heat slug external radiator packaging structure Download PDF

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Publication number
CN201751981U
CN201751981U CN 201020120218 CN201020120218U CN201751981U CN 201751981 U CN201751981 U CN 201751981U CN 201020120218 CN201020120218 CN 201020120218 CN 201020120218 U CN201020120218 U CN 201020120218U CN 201751981 U CN201751981 U CN 201751981U
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CN
China
Prior art keywords
chip
metal
radiator
heat
lock hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201020120218
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Chinese (zh)
Inventor
王新潮
梁志忠
顾炯炯
高盼盼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to CN 201020120218 priority Critical patent/CN201751981U/en
Application granted granted Critical
Publication of CN201751981U publication Critical patent/CN201751981U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to an inner lead-embedded flipped chip inverted T-shaped lockhole heat slug external radiator packaging structure comprising a chip (3), a metal inner lead (4), a metal bump (10), a conducting or non-conducting heat conduction bonding material I (2) between the chip and the metal inner lead, and a plastic package body (8), wherein the metal inner lead (4) is embedded into the plastic package body (8). The structure is characterized in that a heat slug (7) is arranged above the chip (3) and provided with a lockhole (7.1); the conducting or non-conducting heat conduction bonding material II (6) is embedded between the heat slug (7) and the chip (3); a radiator (11) is arranged above the heat slug (7) and fixedly connected with the heat slug (7) via the lockhole (7.1) through a screw (12); and the heat slug (7) has an inverted T-shaped structure. The packaging structure is strong in radiating capacity so as to enable the heat of the chip to be fast conducted outside the packaging body.

Description

Interior pin is imbedded the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure
(1) technical field
The utility model relates to a kind of interior pin and imbeds the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure and method for packing thereof.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
Referring to Fig. 1 and Fig. 2, Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.Fig. 2 is the vertical view of Fig. 1.By Fig. 1 and Fig. 2 as can be seen, baried type chip-packaging structure in Metal Substrate island was made up of pin 4 and wire 5 in Metal Substrate island 1, conduction or nonconducting heat conduction bonding material I2, chip 3, the metal in the past.The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type
Referring to Fig. 3 and Fig. 4, Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.Fig. 4 is the vertical view of Fig. 3.By Fig. 3 and Fig. 4 as can be seen, exposed type chip-packaging structure in Metal Substrate island was made up of pin 4 and wire 5 in Metal Substrate island 1, conduction or nonconducting heat conduction bonding material I2, chip 3, the metal in the past.Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of strong interior pin of heat dissipation capability that can provide to imbed the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure and method for packing thereof.
The purpose of this utility model be achieved in that a kind of in pin imbed the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure, include chip, pin in the metal that is carried of chip below, the metal coupling that chip is used to the signal interconnection of the interior pin of metal, conduction or nonconducting heat conduction bonding material I and plastic-sealed body in chip and the metal between the pin, pin is imbedded plastic-sealed body in the described metal, it is characterized in that above described chip, being provided with radiating block, this radiating block has lock hole, is equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; Be provided with radiator above described radiating block, described radiator is fixedlyed connected with radiating block by described lock hole with screw, and described radiating block is inverted T-shape structure.
The beneficial effects of the utility model are:
The utility model passes through addition radiating block above chip, and sets up radiator outside plastic-sealed body, serves as the function of the heat radiation of high heat, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 imbeds the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure schematic diagram for pin in the utility model.
Reference numeral among the figure:
Pin 4, wire 5, conduction or nonconducting heat conduction bonding material II 6, radiating block 7, lock hole 7.1, plastic-sealed body 8, metal coupling 10, radiator 11, screw 12 in Metal Substrate island 1, conduction or nonconducting heat conduction bonding material I 2, chip 3, the metal.
(5) embodiment
Referring to Fig. 5, Fig. 5 imbeds the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure schematic diagram for pin in the utility model.As seen from Figure 5, pin is imbedded the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure in the utility model, include chip 3, pin 4 in the metal that is carried of chip below, the metal coupling 10 that chip is used to the signal interconnection of the interior pin of metal, conduction or nonconducting heat conduction bonding material I2 and plastic-sealed body 8 in chip and the metal between the pin, pin 4 is imbedded plastic-sealed body 8 in the described metal, above described chip 3, be provided with radiating block 7, this radiating block 7 has lock hole 7.1, is equipped with conduction or nonconducting heat conduction bonding material II 6 between this radiating block 7 and the described chip 3; Be provided with radiator 11 above described radiating block 7, described radiator 11 usefulness screws 12 are fixedlyed connected with radiating block 7 by described lock hole 7.1, and described radiating block 7 is inverted T-shape structure.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described metal coupling 10 can be tin, gold or alloy etc.
The material of described radiator 11 can be copper, aluminium, pottery or alloy etc.

Claims (4)

1. pin is imbedded the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure in one kind, include chip (3), pin (4) in the metal that is carried of chip below, the metal coupling (10) that chip is used to the signal interconnection of the interior pin of metal, conduction or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8) in chip and the metal between the pin, pin (4) is imbedded plastic-sealed body (8) in the described metal, it is characterized in that being provided with radiating block (7) in described chip (3) top, this radiating block (7) has lock hole (7.1), is equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3); Be provided with radiator (11) in described radiating block (7) top, described radiator (11) is fixedlyed connected with radiating block (7) by described lock hole (7.1) with screw (12), and described radiating block (7) is inverted T-shape structure.
2. a kind of interior pin according to claim 1 is imbedded the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure, and the material that it is characterized in that described radiating block (7) is copper, aluminium or pottery.
3. a kind of interior pin according to claim 1 is imbedded the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure, and the material that it is characterized in that described metal coupling (10) is tin or gold.
4. a kind of interior pin according to claim 1 is imbedded the flip-chip lock hole of falling T heat dissipation block externally connected with radiator encapsulating structure, and the material that it is characterized in that described radiator (11) is copper, aluminium or pottery.
CN 201020120218 2010-01-30 2010-01-30 Inner lead-embedded flipped chip inverted T-shaped lockhole heat slug external radiator packaging structure Expired - Fee Related CN201751981U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201020120218 CN201751981U (en) 2010-01-30 2010-01-30 Inner lead-embedded flipped chip inverted T-shaped lockhole heat slug external radiator packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201020120218 CN201751981U (en) 2010-01-30 2010-01-30 Inner lead-embedded flipped chip inverted T-shaped lockhole heat slug external radiator packaging structure

Publications (1)

Publication Number Publication Date
CN201751981U true CN201751981U (en) 2011-02-23

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CN (1) CN201751981U (en)

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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110223

Termination date: 20140130