CN201623064U - Package structure for inverted T radiating block externally connected with radiator and inversed on chip with exposed inner lead - Google Patents

Package structure for inverted T radiating block externally connected with radiator and inversed on chip with exposed inner lead Download PDF

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Publication number
CN201623064U
CN201623064U CN2010201187811U CN201020118781U CN201623064U CN 201623064 U CN201623064 U CN 201623064U CN 2010201187811 U CN2010201187811 U CN 2010201187811U CN 201020118781 U CN201020118781 U CN 201020118781U CN 201623064 U CN201623064 U CN 201623064U
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CN
China
Prior art keywords
chip
radiator
radiating block
metal
externally connected
Prior art date
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Expired - Fee Related
Application number
CN2010201187811U
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Chinese (zh)
Inventor
王新潮
梁志忠
林煜斌
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to CN2010201187811U priority Critical patent/CN201623064U/en
Application granted granted Critical
Publication of CN201623064U publication Critical patent/CN201623064U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The utility model relates to a package structure for an inverted T radiating block externally connected with a radiator and inversed on a chip with an exposed inner lead, which comprises a chip (3), a metal inner lead (4), a metal bump (10) for signal interconnection from the chip (3) to the metal inner lead (4), and a plastic body (8), wherein the metal inner lead (4) is exposed out of the plastic body (8); a radiating block (7) is arranged above the chip (3), and conducting or non-conducting heat-conducting binding material II(6) is nested between the radiating block (7) and the chip (3); a radiator (11) is arranged above the radiating block (7), and conducting or non-conducting heat-conducting binding material III(13) is nested between the radiator (11) and the radiating block (7); and the radiating block (7) is in an inverted T structure. The utility model can provide strong radiating ability to enable the heat of the chip to rapidly conduct to the outside of a package body.

Description

The interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure
(1) technical field
The utility model relates to a kind of interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure and method for packing thereof.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and providing a kind of can provide heat dissipation capability the strong interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure and method for packing thereof.
The purpose of this utility model is achieved in that a kind of interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure, include conduction or nonconducting heat conduction bonding material I and plastic-sealed body between pin in the metal that is carried of chip, chip below, the chip interior pin of metal coupling, chip and metal that the signal interconnection of pin is used in the metal, pin exposes plastic-sealed body in the described metal, it is characterized in that above described chip, being provided with radiating block, be equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; Be provided with radiator above described radiating block, be equipped with conduction or nonconducting heat conduction bonding material III between this radiator and the described radiating block, described radiating block is inverted T-shape structure.
The beneficial effects of the utility model are:
The utility model passes through addition radiating block above chip, and sets up radiator outside plastic-sealed body, serves as the function of the heat radiation of high heat, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure schematic diagram in the utility model.
Reference numeral among the figure:
Pin 4, conduction or nonconducting heat conduction bonding material II6, radiating block 7, plastic-sealed body 8, metal coupling 10, radiator 11 in conduction or nonconducting heat conduction bonding material I2, chip 3, the metal.
(5) embodiment
Referring to Fig. 5, Fig. 5 is the pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure schematic diagram in the utility model.As seen from Figure 5, the pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure in the utility model, include conduction or nonconducting heat conduction bonding material I2 and plastic-sealed body 8 between pin 4 in the metal that is carried of chip 3, chip below, the chip interior pin of metal coupling 10, chip and metal that the signal interconnection of pin is used in the metal, pin 4 exposes plastic-sealed body 8 in the described metal, above described chip 3, be provided with radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material II6 between this radiating block 7 and the described chip 3; Be provided with radiator 11 above described radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material III13 between this radiator 11 and the described radiating block 7, described radiating block 7 is inverted T-shape structure.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described metal coupling 10 can be tin, gold or alloy etc.
The material of described radiator 11 can be copper, aluminium, pottery or alloy etc.

Claims (4)

1. the pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure in a kind, include chip (3), pin (4) in the metal that is carried of chip below, the metal coupling (10) that chip is used to the signal interconnection of the interior pin of metal, conduction or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8) in chip and the metal between the pin, pin (4) exposes plastic-sealed body (8) in the described metal, it is characterized in that being provided with radiating block (7), be equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3) in described chip (3) top; Be provided with radiator (11) in described radiating block (7) top, be equipped with conduction or nonconducting heat conduction bonding material III (13) between this radiator (11) and the described radiating block (7), described radiating block (7) is inverted T-shape structure.
2. a kind of interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure according to claim 1, the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
3. a kind of interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure according to claim 1, the material that it is characterized in that described metal coupling (10) is tin, gold or alloy.
4. a kind of interior pin exposed chip upside-down mounting heat dissipation block externally connected with radiator of falling T encapsulating structure according to claim 1, the material that it is characterized in that described radiator (11) is copper, aluminium, pottery or alloy.
CN2010201187811U 2010-01-30 2010-01-30 Package structure for inverted T radiating block externally connected with radiator and inversed on chip with exposed inner lead Expired - Fee Related CN201623064U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201187811U CN201623064U (en) 2010-01-30 2010-01-30 Package structure for inverted T radiating block externally connected with radiator and inversed on chip with exposed inner lead

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201187811U CN201623064U (en) 2010-01-30 2010-01-30 Package structure for inverted T radiating block externally connected with radiator and inversed on chip with exposed inner lead

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CN201623064U true CN201623064U (en) 2010-11-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789154A (en) * 2016-04-20 2016-07-20 广东工业大学 Inverted chip module group

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789154A (en) * 2016-04-20 2016-07-20 广东工业大学 Inverted chip module group

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101103

Termination date: 20140130