CN201749866U - 大功率发光二极管 - Google Patents
大功率发光二极管 Download PDFInfo
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- CN201749866U CN201749866U CN2010201364534U CN201020136453U CN201749866U CN 201749866 U CN201749866 U CN 201749866U CN 2010201364534 U CN2010201364534 U CN 2010201364534U CN 201020136453 U CN201020136453 U CN 201020136453U CN 201749866 U CN201749866 U CN 201749866U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
本实用新型提供一种大功率发光二极管,它包括透镜、基座和引脚,基座的底部为安装在铜柱上的芯片,其改进之处在于:基座安放透镜的一侧设有凹槽,凹槽末端开设有用于固定透镜的安装沿,透镜为玻璃透镜;芯片与玻璃透镜底面不接触。它不仅可以耐高温适用于量产时回流焊的使用,而且加长的凹槽使用得芯片与玻璃透镜底面不接触有利用工作发热的释放,产品的稳定性得到大大提高。
Description
【技术领域】
本实用新型涉及一种发光器件,特别是一种新型大功率发光二极管。
【背景技术】
LED(Light Emitting Diode),发光二极管,是一种固态的半导体器件,它可以直接把电转化为光。目前LED技术发展迅速,与传统照明技术相比,其具有发光效率高、寿命长和大幅度节能环保等优点,确立了其作为下一代照明的最佳选择。然而现有的大功率LED多为仿LUXEON K2结构,即塑胶支架加PC透镜结构。由于PC的耐热性差,以致不适合回流焊工艺,不能实现自动化上量生产,制约大功率LED在照明及其相关领域的广泛应用。
【实用新型内容】
本实用新型的目的在于克服了上述缺陷,提供一种有效克服上述缺陷,适用于回流焊工艺的新型大功率发光二极管。
本实用新型的目的是这样实现的:它包括透镜、基座和引脚,基座的底部为安装在铜柱上的芯片,其改进之处在于:基座安放透镜的一侧设有凹槽,凹槽末端开设有用于固定透镜的安装沿,透镜为玻璃透镜;
上述结构中,凹槽底部直径6.45mm,顶部6.60mm,中间6.40mm;
上述结构中,凹槽内腔深度为2.40mm,芯片与玻璃透镜底面不接触。
本实用新型采用加长的凹槽结合玻璃透镜设计,不仅可以耐高温适用于量产时回流焊的使用,而且加长的凹槽使用得芯片与玻璃透镜底面不接触有利用工作发热的释放,产品的稳定性得到大大提高。
【附图说明】
下面结合附图详述本实用新型的具体结构
图1为本实用新型正面示意图
图2为本实用新型后面示意图
图3为本实用新型侧面剖视图
【具体实施方式】
如图所示,本实用新型包括透镜1、基座3和引脚4,基座3的底部为安装在铜柱5上的芯片6,本实用新型改进之处在于基座3安放透镜1的一侧设有凹槽2,凹槽2末端开设有用于固定透镜的安装沿7,透镜1采用可耐高温的玻璃透镜;
上述结构中,凹槽2底部直径6.45mm,顶部6.60mm,中间6.40mm,以用利于玻璃透镜的放置、固定的生产要求;
上述结构中,凹槽2内腔深度为2.40mm,芯片6与玻璃透镜1底面不接触,以利于工作时产生热量的释放。
需要指出的是,本实用新型不限于上述实施方式,任何熟悉本专业的技术人员在基于本实用新型技术方案内对上述实施例所作的任何简单修改、等同变化与修饰,均属于本实用新型的保护范围内。
Claims (3)
1.一种大功率发光二极管,它包括透镜、基座和引脚,基座的底部为安装在铜柱上的芯片,其特征在于:基座安放透镜的一侧设有凹槽,凹槽末端开设有用于固定透镜的安装沿,透镜为玻璃透镜。
2.如权利要求1所述的大功率发光二极管,其特征在于:凹槽底部直径6.45mm,顶部6.60mm,中间6.40mm。
3.如权利要求1或2所述的大功率发光二极管,其特征在于:凹槽内腔深度为2.40mm,芯片与玻璃透镜底面不接触。
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CN2010201364534U CN201749866U (zh) | 2010-03-09 | 2010-03-09 | 大功率发光二极管 |
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CN2010201364534U CN201749866U (zh) | 2010-03-09 | 2010-03-09 | 大功率发光二极管 |
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CN201749866U true CN201749866U (zh) | 2011-02-16 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106159065A (zh) * | 2016-09-07 | 2016-11-23 | 深圳市蓝谱里克科技有限公司 | 一种用于大功率led芯片的dbc集成封装模块 |
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2010
- 2010-03-09 CN CN2010201364534U patent/CN201749866U/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106159065A (zh) * | 2016-09-07 | 2016-11-23 | 深圳市蓝谱里克科技有限公司 | 一种用于大功率led芯片的dbc集成封装模块 |
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C14 | Grant of patent or utility model | ||
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Granted publication date: 20110216 Termination date: 20160309 |
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CF01 | Termination of patent right due to non-payment of annual fee |