CN201741715U - Through-hole semiconductor epitaxial film patch type encapsulation - Google Patents
Through-hole semiconductor epitaxial film patch type encapsulation Download PDFInfo
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- CN201741715U CN201741715U CN2010200026282U CN201020002628U CN201741715U CN 201741715 U CN201741715 U CN 201741715U CN 2010200026282 U CN2010200026282 U CN 2010200026282U CN 201020002628 U CN201020002628 U CN 201020002628U CN 201741715 U CN201741715 U CN 201741715U
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Abstract
The utility model discloses through-hole semiconductor epitaxial film patch type encapsulation, which structurally comprises an encapsulation tube shell including a first electrode, a second electrode and an insulating material bracket, a semiconductor epitaxial film laminated on the top-surface first electrode, a passivation layer covered on the encapsulation tube shell and the semiconductor epitaxial film, and a transparent electrode. The first electrode and the second electrode are electrically connected with two electrodes of an external power supply respectively, and are fixed in preset positions by the insulating material bracket. Windows are formed on the passivation layer above the semiconductor epitaxial film and the top-surface second electrode. The transparent electrode is laminated on the semiconductor epitaxial film through an opening on the passivation layer above the surface of the semiconductor epitaxial film, extends towards the top-surface second electrode, and is laminated on the top-surface second electrode through a window on the top-surface second electrode, so as to enable the semiconductor epitaxial film to be connected with the top-surface second electrode through the transparent electrode.
Description
Technical field
The present invention discloses a kind of SMD encapsulation of through hole epitaxial semiconductor film that does not need to beat gold thread, comprises gallium nitrate based, the gallium phosphide base of vertical stratification, gallium nitrogen phosphorus base and the SMD encapsulation of Zinc oxide-base light-emitting diode (LED) epitaxial film.Belong to the photoelectron technology field.
Background technology
Semiconductor lighting enters general illumination just fast, and present major obstacle is expensive.The structure of main flow led chip is the vertical structure semiconductor chip, and its basic structure is as follows: epitaxial film is bonded in conduction by reflection/ohm layer/bonded layer and supports to peel off the support substrate on the substrate, forms the vertical structure semiconductor chip.The vertical structure semiconductor chip need be beaten at least one gold thread, thereby is connected with extraneous power supply.Its weak point is, be difficult for importing big electric current by gold thread to chip, yet importing big electric current to chip is the important method that reduces chip cost fast.(application number: the 200920219188.3) solution of the SMD encapsulation of a kind of three-dimensional vertical structure epitaxial semiconductor film of proposition, this scheme adopts the QFN substrate to Chinese patent application.
The present invention discloses a kind of SMD encapsulation of through hole epitaxial semiconductor film that does not need to beat gold thread, adopts the substrate of through hole insulating material.
Summary of the invention
The structure of a specific embodiment of the SMD encapsulation of through hole epitaxial semiconductor film comprises:
(1) encapsulation shell.The encapsulation shell comprises insulating support, the a plurality of through holes of the inner formation of insulating support, filled conductive material in each through hole, form at least one top first electrode and at least one top second electrode on the top of insulating support, form on the bottom of insulating support respectively and top first electrode and top second electrode corresponding bottom first electrode and bottom second electrode.Top first electrode, at least one through hole and bottom first electrode form and are electrically connected, and form an electrode, are referred to as first electrode below.Top second electrode, at least one through hole and bottom second electrode form and are electrically connected, and form an electrode, are referred to as second electrode below.First electrode and the mutual electric insulation of second electrode.Bottom first electrode and bottom second electrode are electrically connected with extraneous power supply respectively.The also unnecessary shape with top second electrode of the shape of bottom second electrode is identical; The also unnecessary shape with top first electrode of the shape of bottom first electrode is identical.
(2) at least one epitaxial semiconductor film.The structure of epitaxial semiconductor film comprises, first kind limiting layer, active layer, the second class limitations layer.Active layer is formed between the first kind limiting layer and the second class limitations layer.Epitaxial semiconductor film is bonded at least one top first electrode.Bonding promptly can be the bonding at wafer level (wafer level), also can be the bonding in chip (chip level) level.
(3) passivation layer.Passivation layer covers the top and the epitaxial semiconductor film of encapsulation shell.The etch passivation layer, above the first kind limiting layer of epitaxial semiconductor film and top second electrode above preposition on form window (opening).A specific embodiment: the window 208 above the first kind limiting layer of epitaxial semiconductor film has identical shape and slightly a little bit smaller size with epitaxial semiconductor film, for example, epitaxial semiconductor film is 1 * 1 millimeter a square, and the window on it is 0.95 * 0.95 millimeter a square.Attention: epitaxial semiconductor film can have other sizes, and the window on it is corresponding with it.
(4) transparency electrode.Transparency electrode covers on the part or all of encapsulation shell; By the window 208 of passivation layer in the surface of the first kind limiting layer of epitaxial semiconductor film, transparency electrode is layered on the first kind limiting layer of epitaxial semiconductor film, and this part of transparency electrode is noted as 209 in Fig. 2; By the window 207 of passivation layer second electrode at the top, transparency electrode is layered on second electrode of top, and this part of transparency electrode is noted as 210 in Fig. 2; The first kind limiting layer of epitaxial semiconductor film 203 electrically connects by transparency electrode and top second electrode.Therefore, do not need the first kind limiting layer of epitaxial semiconductor film and top second electrode to be electrically connected by the gold thread of beating in the packaging technology.Transparency electrode has the single or multiple lift structure, and the material of each of transparency electrode layer is to select from one group of conductive oxide material and one group of metal material, and conductive oxide material comprises: ITO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, In2O3:Zn, NiO, MnO, CuO, SnO, GaO; Transparent metal film comprises: Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au.
A specific embodiment: transparency electrode has double-layer structure, and the bottom that is layered in the transparency electrode on the epitaxial semiconductor film is a tin indium oxide, and the top layer of transparency electrode is layered on the bottom of transparency electrode, and its material is transparent single or multiple lift metal level.
Another specific embodiment: transparency electrode has double-layer structure, and the bottom that is layered in the transparency electrode on the epitaxial semiconductor film is transparent single or multiple lift metal level, and the top layer of transparency electrode is layered on the bottom of transparency electrode, and its material is a tin indium oxide.
Another specific embodiment: transparency electrode has mixed structure: the transparency electrode that is layered on the epitaxial semiconductor film has single layer structure, and its material is a tin indium oxide; The transparency electrode that is layered on the other parts has double-decker, and its material is tin indium oxide and transparent metal layer.
Another specific embodiment: the surface of transparency electrode has alligatoring structure 211.
Another specific embodiment: the protective layer 215 of stacked insulation on the surface of transparency electrode.
Another specific embodiment: the surface of the protective layer of the lip-deep insulation of transparency electrode has alligatoring structure 216.
Purpose of the present invention and every effect that can reach are as follows:
(1) the invention provides the SMD encapsulation of a kind of through hole epitaxial semiconductor film (comprises, gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base, the SMD encapsulation of Zinc oxide-base LED epitaxial film), solved the above-mentioned problem that is difficult for importing big electric current, made LED can enter general lighting soon to chip.
(2) the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention, because do not need any luminescent layer material of etching, so, absolutely utilize the luminescent layer material, simplified manufacturing process from chip to encapsulation, improved yields.
(3) the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention because need not to form patterned metal electrode on epitaxial semiconductor film, has been simplified manufacturing process, reduces cost.
(4) the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention: volume is little, in light weight, thin thickness, is specially adapted to backlight (backlight) and illumination.
(5) the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention: because the surface of epitaxial semiconductor film by alligatoring, therefore, has higher light and takes out efficient.
(6) embodiment of the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention: because the surface of transparency electrode by alligatoring, therefore, has higher light and takes out efficient.
(7) embodiment of the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention: because the surface of the lip-deep protective layer of transparency electrode by alligatoring, therefore, has higher light and takes out efficient.
(8) the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention does not have electric current congested (currentcrowding), can pass through big electric current.
The present invention and its feature and benefit will better be showed in the following detailed description.
Description of drawings
Fig. 1 a shows the top view of an embodiment of encapsulation shell.
Fig. 1 b shows the top view of an embodiment of encapsulation shell.
Fig. 1 c shows the top view of an embodiment of encapsulation shell.
Fig. 1 d shows the top view of an embodiment of encapsulation shell.
Fig. 1 e shows the top view of an embodiment of encapsulation shell.
Fig. 1 f shows the top view of an embodiment of encapsulation shell.
Fig. 1 g shows the sectional view of an embodiment of encapsulation shell.
Fig. 2 a shows the first step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
Fig. 2 b shows second step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
Fig. 2 c shows the third step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
Fig. 2 d shows the 4th step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
Fig. 2 e shows the 5th step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
Fig. 2 f shows the 6th step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
Fig. 2 g shows the 7th step of an embodiment of the technology of making the SMD encapsulation of through hole epitaxial semiconductor film.
The 8th step of an embodiment of the technology of the SMD encapsulation of Fig. 2 h displaying manufacturing through hole epitaxial semiconductor film and an embodiment of the SMD encapsulation of through hole epitaxial semiconductor film.
Specific embodiment
Though specific embodiments of the invention will be described below, following description just illustrates principle of the present invention, rather than limits the invention to the description of following specific embodiment.
Attention: followingly be applicable to all specific embodiments of the present invention:
(1) ratio of each several part is not represented the ratio of actual products among the figure.
(2) a plurality of through holes of the inner formation of insulating support, filled conductive material in each through hole, form at least one top first electrode and at least one top second electrode on the top of insulating support, form on the bottom of insulating support respectively and top first electrode and top second electrode corresponding bottom first electrode and bottom second electrode.Top first electrode, at least one through hole and bottom first electrode form and are electrically connected, and form an electrode, are referred to as first electrode below.Top second electrode, at least one through hole and bottom second electrode form and are electrically connected, and form an electrode, are referred to as second electrode below.First electrode and the mutual electric insulation of second electrode.Bottom first electrode and bottom second electrode are electrically connected with extraneous power supply respectively.The also unnecessary shape with top second electrode of the shape of bottom second electrode is identical; The also unnecessary shape with top first electrode of the shape of bottom first electrode is identical.
(3) material of the epitaxial film of the SMD encapsulation of through hole epitaxial semiconductor film provided by the invention is to select from one group of material, and this group material comprises, gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base material.Wherein, gallium nitride-based material comprises: the binary system of gallium, aluminium, indium, nitrogen, ternary system, quaternary material.The binary system of gallium, aluminium, indium, nitrogen, ternary system, quaternary material comprise, GaN, GaInN, AlGaInN, AlGaInN, etc.The gallium phosphide sill comprises: the binary system of gallium, aluminium, indium, phosphorus, ternary system, quaternary material.The binary system of gallium, aluminium, indium, phosphorus, ternary system, quaternary material comprise, GaP, GaInP, AlGaInP, InP, etc.Gallium nitrogen phosphorus sill comprises: the binary system of gallium, aluminium, indium, nitrogen, phosphorus, ternary system, quaternary system and five yuan of based materials.The binary system of gallium, aluminium, indium, nitrogen, phosphorus, ternary system, quaternary system and five yuan of based materials comprise, GaNP, AlGaNP, GaInNP, AlGaInNP, etc.The Zinc oxide-base material comprises, ZnO, etc.Gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base epitaxial film comprise: gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base LED epitaxial film.The crystrallographic plane of gallium nitride-based epitaxial layer is to select from one group of crystrallographic plane, and this group crystrallographic plane comprises: c-plane, a-plane, m-plane.
(4) last one processing step of the production technology of the SMD encapsulation of manufacturing through hole epitaxial semiconductor film provided by the invention is that the encapsulation shell array that has epitaxial semiconductor film is divided into the SMD encapsulation of single vertical structure semiconductor epitaxial film.So, in order to simplify picture, in the schematic diagram of the specific embodiment that Fig. 1 and 2 shows, only show an encapsulation shell and on epitaxial semiconductor film.
(5) material of insulating support is to select from one group of material, and this group material comprises, insulating ceramics, and silicon, etc.The main component of insulating ceramics comprises aluminium nitride, or aluminium oxide, etc.
(6) material of Jue Yuan protective layer is to select from one group of material; this group material comprises; silica gel (silicone), resin (epoxy), silica (SiO2), silicon nitride, silicon-on-glass (SOG), polyimides (polyimide), glass, polymethyl methacrylate (polymethylmethacrylate), acrylic acid (acrylic), etc.
(7) transparency electrode has the single or multiple lift structure, the material of each of transparency electrode layer is to select from one group of conductive oxide material and one group of metal material, and conductive oxide material comprises: ITO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, In2O3:Zn, NiO, MnO, CuO, SnO, GaO; Transparent metal film comprises: Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au.
(8) on the surface of the epitaxial semiconductor film in the SMD encapsulation of through hole epitaxial semiconductor film, form alligatoring structure or photon crystal structure.Draw for simplifying, only in Fig. 2 b, alligatoring or photon crystal structure 205 draw.
(9) on the surface of the transparency electrode in the SMD encapsulation of through hole epitaxial semiconductor film, form alligatoring structure 211.
(10) form the protective layer that insulate on the transparency electrode surface in the SMD encapsulation of through hole epitaxial semiconductor film, on the surface of protective layer, form alligatoring structure 216.
(11) passivation layer is all having window above the epitaxial semiconductor film and on the preposition above second electrode of top.
(12) first electrodes comprise at least one electrode.Comprise that for first electrode situation of a plurality of electrodes, the mutual electric insulation of each electrode, each electrode comprise bottom first electrode, top first electrode and the through hole filler of conduction that their are electrically connected, below, be referred to as first electrode.
(13) second electrodes comprise at least one electrode.Comprise that for second electrode situation of a plurality of electrodes, the mutual electric insulation of each electrode, each electrode comprise bottom second electrode, top second electrode and the through hole filler of conduction that their are electrically connected, below, be referred to as second electrode.
(14) in the SMD encapsulation of through hole epitaxial semiconductor film, can have single or multiple epitaxial semiconductor films, draw for simplifying, a plurality of epitaxial semiconductor films do not draw.A plurality of epitaxial semiconductor films promptly can be bonded on top first electrode of first electrode, can also be bonded in respectively on a plurality of tops first electrode of first electrode.
(15) method that epitaxial semiconductor film is bonded on first electrode of top comprises, conduct electricity gluing (for example, conductive silver glue, etc.), and the metal eutectic bonding, electrically conductive paste, etc.For adopting metal eutectic bonding mode, need stacked in advance conduction reflection/ohm/bonded layer on epitaxial semiconductor film (not showing among the figure), epitaxial semiconductor film is bonded on first electrode of top.Conduction reflection/ohm/bonded layer has sandwich construction, and its function is reverberation, maintenance ohmic contact, and other metal level bondings.For adopting nonmetal eutectic bonding mode, only need stacked in advance conduction reflection/ohm layer on epitaxial semiconductor film (not showing among the figure).
(16) the epitaxial semiconductor film bonding method comprises: wafer level (wafer level) bonding, the horizontal bonding of chip (chip level).
(17) Fig. 1 shows 6 specific embodiments that encapsulate shell.Encapsulation shell array comprises a plurality of encapsulation shells, draws for simplifying, and only draws among each figure one and encapsulates shell.Each encapsulation shell comprises: insulating support 100, at least one top first electrode 101t, at least one top second electrode 102t.Can stacked at least one epitaxial semiconductor film on each top first electrode.Top first electrode 101t and the mutual electric insulation of the top second electrode 102t.Top first electrode 101t and the top second electrode 102t are fixed on preposition by insulating support 100.The a plurality of through holes of the inner formation of insulating support, filled conductive material in each through hole, form at least one top first electrode and at least one top second electrode on the top of insulating support, form on the bottom of insulating support respectively and top first electrode and top second electrode corresponding bottom first electrode and bottom second electrode.Top first electrode, at least one through hole and bottom first electrode form and are electrically connected, and form one first electrode.Top second electrode, at least one through hole and bottom second electrode form and are electrically connected, and form one second electrode.First electrode and the mutual electric insulation of second electrode.Bottom first electrode and bottom second electrode are electrically connected with extraneous power supply respectively.
Fig. 1 a shows the top view of an embodiment of encapsulation shell.The encapsulation shell comprises, insulating support 100, top first an electrode 101t and top second an electrode 102t.
Fig. 1 b shows the top view of an embodiment of encapsulation shell.The encapsulation shell comprises, insulating support 100, two the top first electrode 101t and two top second electrode 102t.
Fig. 1 c shows the top view of an embodiment of encapsulation shell.The encapsulation shell comprises, insulating support 100, the top first electrode 101t and three top second electrode 102t.
Fig. 1 d shows the top view of an embodiment of encapsulation shell.The encapsulation shell comprises, insulating support 100, the top first electrode 101t and four top second electrode 102t.
Fig. 1 e shows the top view of an embodiment of encapsulation shell.The encapsulation shell comprises, insulating support 100, top first an electrode 101t and top second an electrode 102t.Wherein, the top second electrode 102t becomes the U font, surrounds from 3 the top first electrode 101t.
Notice that bottom second electrode also unnecessaryly has an identical shape with the top second electrode 102t.
Fig. 1 f shows the top view of an embodiment of encapsulation shell.The encapsulation shell comprises, insulating support 100, top first an electrode 101t and top second an electrode 102t.Wherein, the top second electrode 102t becomes square shape, in the middle of the top first electrode 101t is trapped among.
Notice that bottom second electrode also unnecessaryly has an identical shape with the top second electrode 102t.
Fig. 1 g exploded view 1d shows the A-A sectional view of the specific embodiment of encapsulation shell.The encapsulation shell comprises that insulating support 100 wherein, forms the top first electrode 101t, the top second electrode 102t and the bottom first electrode 101b, the bottom second electrode 102b respectively on the top of insulating support 100 and the bottom.The inside of insulating support 100 forms at least one through hole filler 101m and at least one through hole filler 102m.Through hole filler 101m is electrically connected top first electrode 101t and the bottom first electrode 101b.Through hole filler 101m, the top first electrode 101t and the bottom first electrode 101b form first electrode.Through hole filler 102m is electrically connected top second electrode 102t and the bottom second electrode 102b.Through hole filler 102m, the top second electrode 102t and the bottom second electrode 102b form second electrode.First electrode and the mutual electric insulation of second electrode.
Fig. 2 shows the embodiment of the SMD encapsulation of epitaxial semiconductor film and an embodiment of manufacturing process thereof.
Fig. 2 a adopts the package tube shell structure of Fig. 1 g.Epitaxial semiconductor film 203 is grown on the growth substrates 204.Epitaxial semiconductor film 203 includes, but are not limited to: first kind limiting layer, active layer, the second class limitations layer.Epitaxial semiconductor film 203 is bonded on the first electrode 201t of top.
Notice that bonding technology promptly can be the bonding at wafer level (wafer level), also can be the bonding in chip (chip level) level.
Fig. 2 b: peel off growth substrates 204.For the epitaxial semiconductor film of different materials, the method difference of peeling off.
The embodiment of an optimization is: after peeling off growth substrates 204, continue to adopt dry method or wet etching N class limitations layer, expose up to N+/N++ class limitations layer.Wherein, the N+/N++ class limitations is stacked between active layer and the N class limitations layer layer by layer.
The embodiment of an optimization is: form alligatoring structure or photonic crystal 205 on the surface of the exposure of epitaxial semiconductor film 203.In order to simplify picture, in the figure of back, no longer draw alligatoring structure or photonic crystal 205.
Fig. 2 c: on epitaxial semiconductor film 203 and encapsulation shell, cover passivation layer 206.
Fig. 2 d: etch passivation layer 206 forms window 208 and window 207 respectively on the precalculated position above epitaxial semiconductor film 203 and the top second electrode 202t, makes the surface in the precalculated position of epitaxial semiconductor film 203 and the top second electrode 202t expose.
Fig. 2 e: covering transparent electrode on the encapsulation shell.Transparency electrode comprises that (1) is called transparency electrode 209 below by passivation layer 206 window of opening 208 and the part 209 that epitaxial semiconductor film 203 electrically contacts above epitaxial semiconductor film 203.(2) by passivation layer 206 window of above the second electrode 202t of top, opening 207 and the part 210 that the top second electrode 202t electrically contacts, be called transparency electrode 210 below.(3) cover part 221 above the passivation layer (this part is electrically connected transparency electrode 209 and transparency electrode 210), be called transparency electrode 221 below.Transparency electrode 209,210,221 is an integral body and is electrically connected mutually.
Fig. 2 f: a surface bond of epitaxial semiconductor film 203 on the first electrode 201t of top, thereby be electrically connected with the bottom first electrode 201b.Another surface of epitaxial semiconductor film 203 is electrically connected with transparency electrode 209, therefore, is electrically connected with the top second electrode 202t by transparency electrode 209,221,210, thereby is electrically connected with the bottom second electrode 202b.
The embodiment of an optimization is: form alligatoring structure 211 on the surface of transparency electrode 209,210,221.
The embodiment of an optimization is: the outward flange along the encapsulation shell, remove transparency electrode, and expose up to passivation layer, form step 212, so that reduce electric leakage.
Fig. 2 g: the embodiment of an optimization: the protective layer 215 of stacked insulation on the surface of transparency electrode 209,210,221.Wherein, the surface of transparency electrode 209,210,221 can be level and smooth surface, also can be the surface of alligatoring.
Fig. 2 h: the embodiment of an optimization: in the embodiment of the optimization of Fig. 2 g, the surface of the protective layer 215 of insulation has alligatoring structure 216.
Top concrete description does not limit the scope of the invention, and only provides some specific illustrations of the present invention.Therefore covering scope of the present invention should be determined by claim and their legal equivalents, rather than by above-mentioned specific detailed description and embodiment decision.
Claims (7)
1. the SMD encapsulation of through hole epitaxial semiconductor film is characterized in that, the SMD encapsulation of described through hole epitaxial semiconductor film comprises:
-encapsulation shell; Wherein, described encapsulation shell comprises: insulating support; Inner a plurality of through holes, the filled conductive material in the described through hole of forming of described insulating support; Form at least one top first electrode and at least one top second electrode on the top of described insulating support; Form on the bottom of described insulating support respectively and described top first electrode and described top second electrode corresponding bottom first electrode and bottom second electrode; Described top first electrode, at least one through hole and described bottom first electrode form and are electrically connected, and form first electrode; Described top second electrode, at least one through hole and described bottom second electrode form and are electrically connected, and form second electrode; Described first electrode and the mutual electric insulation of described second electrode; Described bottom first electrode and described bottom second electrode are electrically connected with extraneous power supply respectively;
-at least one epitaxial semiconductor film; Described epitaxial semiconductor film comprises: first kind limiting layer, the active layer and the second class limitations layer; Described active layer is layered between described first kind limiting layer and the described second class limitations layer; Described epitaxial semiconductor film is bonded on first electrode of described top;
-passivation layer; Described passivation layer is layered on described encapsulation shell and the described epitaxial semiconductor film; Described passivation layer above the described epitaxial semiconductor film and described top second electrode above preposition on have window;
-transparency electrode; Wherein, described transparency electrode is layered on the described epitaxial semiconductor film by the window of described passivation layer above described epitaxial semiconductor film; By the window of described passivation layer above second electrode of described top, be layered on second electrode of described top, make the surface of described epitaxial semiconductor film electrically connect by described transparency electrode and described top second electrode.
2.
AsThe SMD encapsulation of the described through hole epitaxial semiconductor film of claim 1 is characterized in that, the surface of described epitaxial semiconductor film is by alligatoring or form photon crystal structure.
3.
AsThe SMD encapsulation of the described through hole epitaxial semiconductor film of claim 1 is characterized in that described transparency electrode has the single or multiple lift structure.
4.
AsThe SMD encapsulation of the described through hole epitaxial semiconductor film of claim 3 is characterized in that, the material of each of described transparency electrode layer is to select from one group of material, and this group material comprises, conductive oxide material and metal material.
5.
AsThe SMD encapsulation of the described through hole epitaxial semiconductor film of claim 1 is characterized in that the surface of described transparency electrode is by alligatoring.
6.
AsThe SMD encapsulation of the described through hole epitaxial semiconductor film of claim 1 is characterized in that, the surface of described transparency electrode forms the protective layer of insulation.
7.
AsThe SMD encapsulation of the described through hole epitaxial semiconductor film of claim 5 is characterized in that the surface of the protective layer of described insulation is by alligatoring.
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| CN2010200026282U CN201741715U (en) | 2010-01-07 | 2010-01-07 | Through-hole semiconductor epitaxial film patch type encapsulation |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187508A (en) * | 2011-12-31 | 2013-07-03 | 刘胜 | Size encapsulation structure and encapsulation technology of light-emitting diode (LED) wafer level chip |
| CN109698264A (en) * | 2017-10-20 | 2019-04-30 | 展晶科技(深圳)有限公司 | Light emitting diode and its manufacturing method |
-
2010
- 2010-01-07 CN CN2010200026282U patent/CN201741715U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103187508A (en) * | 2011-12-31 | 2013-07-03 | 刘胜 | Size encapsulation structure and encapsulation technology of light-emitting diode (LED) wafer level chip |
| CN103187508B (en) * | 2011-12-31 | 2015-11-18 | 刘胜 | LED Wafer-level Chip Scale Package structure and packaging technology |
| CN109698264A (en) * | 2017-10-20 | 2019-04-30 | 展晶科技(深圳)有限公司 | Light emitting diode and its manufacturing method |
| CN109698264B (en) * | 2017-10-20 | 2020-08-18 | 展晶科技(深圳)有限公司 | Light emitting diode and method for manufacturing the same |
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