CN201594549U - Surface-mount encapsulation for three-dimensional vertical semiconductor epitaxial film - Google Patents
Surface-mount encapsulation for three-dimensional vertical semiconductor epitaxial film Download PDFInfo
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- CN201594549U CN201594549U CN 200920219188 CN200920219188U CN201594549U CN 201594549 U CN201594549 U CN 201594549U CN 200920219188 CN200920219188 CN 200920219188 CN 200920219188 U CN200920219188 U CN 200920219188U CN 201594549 U CN201594549 U CN 201594549U
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- H01—ELECTRIC ELEMENTS
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Abstract
The invention discloses a surface-mount encapsulation for a vertical semiconductor epitaxial film without the need of gold wire bonding. The structure thereof comprises an encapsulated tube shell comprising a first metal base, a second metal base and an insulation material bracket, a semiconductor epitaxial film laminated on the first metal base, a passivation layer covering the encapsulated tube shell and the semiconductor epitaxial film, and a transparent electrode; and the first and the second metal bases are electrically connected with the two electrodes of an external power source respectively. The insulation material bracket fixes the first and the second metal bases on the predetermined positions to form the encapsulated tube shell. Windows are arranged on the passivation layer above the semiconductor epitaxial film and the second metal base. The transparent electrode is laminated on the semiconductor epitaxial film through the window of the passivation layer above the semiconductor epitaxial film, extends along the direction of the second metal base, and is laminated on the second metal base through the window of the passivation layer above the second metal base, thereby electrically connecting the semiconductor epitaxial film with the second metal base through the transparent electrode.
Description
Technical field
The present invention discloses a kind of SMD encapsulation of epitaxial semiconductor film that does not need to beat the three-dimensional vertical structure of gold thread, comprises gallium nitrate based, the gallium phosphide base of vertical stratification, gallium nitrogen phosphorus base and the SMD encapsulation of Zinc oxide-base light-emitting diode (LED) epitaxial film.Belong to the photoelectron technology field.
Background technology
The basic structure of vertical structure semiconductor chip is as follows: the epitaxial film of vertical structure semiconductor chip is bonded in conduction by reflection/ohm layer/bonded layer and supports to peel off the support substrate on the substrate, forms the vertical structure semiconductor chip.That makes the vertical structure semiconductor chip peels off the support substrate processing, easily cause the epitaxial film damage, so yields is low, the cost height.In addition, the vertical structure semiconductor chip need be beaten at least one gold thread, thereby is connected with extraneous power supply.Its weak point is, is difficult for importing big electric current by gold thread to chip, and gold thread can cause integrity problem, and the shared space of gold thread has increased the thickness of the encapsulation base of vertical structure semiconductor chip, and gold thread can cause the packaging technology complexity, etc.
For solving the problem that above-mentioned gold thread causes, the present invention discloses a kind of SMD encapsulation of epitaxial semiconductor film that does not need to beat the three-dimensional vertical structure of gold thread (comprising gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base LED epitaxial film).
Summary of the invention
The structure of a specific embodiment of the SMD encapsulation of epitaxial semiconductor film of three-dimensional vertical structure comprises:
(1) encapsulation shell.The encapsulation shell comprises insulating support, first metal base, second metal base.First metal base comprises at least one metal base, second metal base comprises at least one metal base, first metal base and the mutual electric insulation of second metal base form the encapsulation shell thereby insulating support is fixed on preposition to first and second metal bases.First first type surface of insulating support has identical direction with first first type surface and second first type surface of first metal base and second metal base respectively with second first type surface.The encapsulation shell comprises first first type surface and second first type surface, and first first type surface and second first type surface of encapsulation shell are made of first first type surface and second first type surface, first first type surface of second metal base and first first type surface and second first type surface of second first type surface and insulating support of first metal base respectively.Fig. 2 shows a specific embodiment: first first type surface of insulating support 200 is equal substantially with first first type surface of first and second metal bases.Fig. 2 shows a specific embodiment of electrode position: second first type surface 221 of first metal base 201 and second first type surface 222 of second metal base 202 will be respectively electrically connect with two electrodes of extraneous power supply; In this specific embodiment, can be called first and second electrodes to second first type surface of first metal base and second metal base.
(2) at least one epitaxial semiconductor film 203.The structure of epitaxial semiconductor film comprises, first kind limiting layer, active layer, the second class limitations layer.Active layer is formed between the first kind limiting layer and the second class limitations layer.Epitaxial semiconductor film 203 is bonded on first first type surface of first metal base 201.
(3) passivation layer 206.Passivation layer covers first first type surface and the epitaxial semiconductor film of encapsulation shell.The etch passivation layer, make its above the first kind limiting layer of epitaxial semiconductor film and first first type surface of second metal base above preposition on form window (opening).A specific embodiment: the window 208 above the first kind limiting layer of epitaxial semiconductor film has identical shape and slightly a little bit smaller size with epitaxial semiconductor film, for example, epitaxial semiconductor film is 1 * 1 millimeter a square, and the window on it is 0.95 * 0.95 millimeter a square.Attention: epitaxial semiconductor film can have other sizes, and the window on it is corresponding with it.
(4) transparency electrode.Transparency electrode covers on the part or all of encapsulation shell; By the window 208 of passivation layer in the surface of the first kind limiting layer of epitaxial semiconductor film, transparency electrode is layered on the first kind limiting layer of epitaxial semiconductor film, and this part of transparency electrode is noted as 209 in Fig. 2; By the window 207 of passivation layer above first first type surface of second metal base, transparency electrode is layered on first first type surface of second metal base, and this part of transparency electrode is noted as 210 in Fig. 2; Make first first type surface of first kind limiting layer by the transparency electrode and second metal base 202 of epitaxial semiconductor film 203 electrically connect.Therefore, do not need first first type surface of the first kind limiting layer of epitaxial semiconductor film and second metal base to be electrically connected by the gold thread of beating in the packaging technology.Transparency electrode has the single or multiple lift structure, and the material of each of transparency electrode layer is to select from one group of material, and this group material includes, but not limited to electric conductive oxidation indium tin (ITO), conductive zinc oxide, is thinned to transparent single or multiple lift metal level.
A specific embodiment: transparency electrode has double-layer structure, the bottom that is layered in the transparency electrode on the epitaxial semiconductor film is tin indium oxide or conductive zinc oxide, the top layer of transparency electrode is layered on the bottom of transparency electrode, and its material is transparent single or multiple lift metal level.
Another specific embodiment: transparency electrode has double-layer structure, the bottom that is layered in the transparency electrode on the epitaxial semiconductor film is transparent single or multiple lift metal level, the top layer of transparency electrode is layered on the bottom of transparency electrode, and its material is tin indium oxide or conductive zinc oxide.
Another specific embodiment: the surface of transparency electrode has alligatoring structure 211.
Another specific embodiment: the protective layer 215 of stacked insulation on the surface of transparency electrode.
Another specific embodiment: the surface of the protective layer of the lip-deep insulation of transparency electrode has alligatoring structure 216.
Purpose of the present invention and every effect that can reach are as follows:
(1) the invention provides the SMD encapsulation of a kind of three-dimensional vertical structure epitaxial semiconductor film (comprises, gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base, the SMD encapsulation of Zinc oxide-base LED epitaxial film), solved and above-mentioned be difficult for importing thickness, the gold thread that big electric current, gold thread can cause integrity problem, the shared space of gold thread to increase the encapsulation base of vertical structure semiconductor chip and can cause the packaging technology complexity, etc. problem to chip.
(2) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention, because do not need any luminescent layer material of etching, so, absolutely utilize the luminescent layer material, simplified manufacturing process from chip to encapsulation, improved yields.
(3) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention because need not to form patterned metal electrode on epitaxial semiconductor film, has been simplified manufacturing process, reduces cost.
(4) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention:, have low thermal resistance because epitaxial semiconductor film is bonded directly on the metal base.Volume provided by the invention is little, in light weight, the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film of thin thickness is specially adapted to backlight (backlight) and illumination.
(5) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention: because the surface of epitaxial semiconductor film by alligatoring, therefore, has higher light and takes out efficient.
(6) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention: because the surface of transparency electrode by alligatoring, therefore, has higher light and takes out efficient.
(7) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention: because the surface of the lip-deep protective layer of transparency electrode by alligatoring, therefore, has higher light and takes out efficient.
(8) the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention, do not have electric current congested (crowding), can be by big electric current, heat conduction efficiency height, antistatic effect height.
The present invention and its feature and benefit will better be showed in the following detailed description.
Description of drawings
Fig. 1 shows the several specific embodiments that encapsulate shell.
Fig. 2 shows several specific embodiments of the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film.
Specific embodiment
Though specific embodiments of the invention will be described below, following description just illustrates principle of the present invention, rather than limits the invention to the description of following specific embodiment.
Attention: followingly be applicable to all specific embodiments of the present invention:
(1) ratio of each several part is not represented the ratio of actual products among the figure.
(2) material of the epitaxial film of the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film provided by the invention is to select from one group of material, and this group material comprises, gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base material.Wherein, gallium nitride-based material comprises: the binary system of gallium, aluminium, indium, nitrogen, ternary system, quaternary material.The binary system of gallium, aluminium, indium, nitrogen, ternary system, quaternary material comprise, GaN, GaInN, AlGaInN, AlGaInN, etc.The gallium phosphide sill comprises: the binary system of gallium, aluminium, indium, phosphorus, ternary system, quaternary material.The binary system of gallium, aluminium, indium, phosphorus, ternary system, quaternary material comprise, GaP, GaInP, AlGaInP, InP, etc.Gallium nitrogen phosphorus sill comprises: the binary system of gallium, aluminium, indium, nitrogen, phosphorus, ternary system, quaternary system and five yuan of based materials.The binary system of gallium, aluminium, indium, nitrogen, phosphorus, ternary system, quaternary system and five yuan of based materials comprise, GaNP, AlGaNP, GaInNP, AlGaInNP, etc.The Zinc oxide-base material comprises, ZnO, etc.Gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base epitaxial film comprise: gallium nitrate based, gallium phosphide base, gallium nitrogen phosphorus base and Zinc oxide-base LED epitaxial film.The crystrallographic plane of gallium nitride-based epitaxial layer is to select from one group of crystrallographic plane, and this group crystrallographic plane comprises: c-plane, a-plane, m-plane.
(3) last one processing step of the production technology of the SMD encapsulation of manufacturing three-dimensional vertical structure epitaxial semiconductor film provided by the invention is that the encapsulation shell array that has epitaxial semiconductor film is divided into the SMD encapsulation of single vertical structure semiconductor epitaxial film.So,, in the schematic diagram of the specific embodiment that Fig. 1 and 2 shows, only show an encapsulation shell in order to simplify picture.Each encapsulation shell comprises: insulating support, first metal base, second metal base.Wherein, insulating support is fixed on preposition to first metal base and second metal base.
The material of (4) first metal bases and second metal base is to select from one group of material, and this group material comprises, metal, and alloy, etc.; Metal comprises, copper, etc.; Alloy comprises, tungsten copper, etc.
(5) material of insulating support is to select from one group of material, and this group material comprises, insulating plastic material (molding compound), and insulating ceramics, etc.Insulating ceramics comprises aluminium nitride, aluminium oxide, etc.
(6) material of Jue Yuan protective layer is to select from one group of material; this group material comprises; silica gel (silicone), resin (epoxy), silica (SiO2), silicon nitride, silicon-on-glass (SOG), polyimides (polyimide), glass, polymethyl methacrylate (polymethylmethacrylate), acrylic acid (acrylic), etc.
(7) transparency electrode has the single or multiple lift structure, and the material of each of transparency electrode layer is to select from one group of material, and this group material includes, but not limited to electric conductive oxidation indium tin (ITO), conductive zinc oxide, is thinned to transparent single or multiple lift metal level.
(8) on the surface of the epitaxial semiconductor film in the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film, can form alligatoring structure or photon crystal structure.Draw for simplifying, only in Fig. 2 b, alligatoring or photon crystal structure 205 draw.
(9) on the surface of the transparency electrode in the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film, can form alligatoring structure 211.
(10) on the surface of the protective layer of the lip-deep insulation of transparency electrode in the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film, can form alligatoring structure 216.
(11) passivation layer is all having window above the epitaxial semiconductor film and on the preposition above first first type surface of second metal base.
(12) in the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film, can have single or multiple epitaxial semiconductor films, draw for simplifying, a plurality of epitaxial semiconductor films do not draw.A plurality of epitaxial semiconductor films promptly can be bonded on the metal base of first metal base, can also be bonded in respectively on a plurality of metal bases of first metal base.
(13) method that epitaxial semiconductor film is bonded on first metal base comprises, conduct electricity gluing (for example, electroconductive resin, etc.), and the metal eutectic bonding, soldering paste, etc.For adopting metal eutectic bonding mode, need stacked in advance conduction reflection/ohm/bonded layer on epitaxial semiconductor film (not showing among the figure), epitaxial semiconductor film is bonded on first first type surface of first metal base.Conduction reflection/ohm/bonded layer has sandwich construction, and its function is reverberation, maintenance ohmic contact, and other metal level bondings.For adopting other combinations, need stacked in advance only conduction reflection/ohm layer (not showing among the figure) on epitaxial semiconductor film.
Fig. 1 shows 6 specific embodiments that encapsulate shell.Encapsulation shell array comprises a plurality of encapsulation shells, draws for simplifying, and only draws among each figure one and encapsulates shell.Each encapsulation shell comprises: insulating support 100, the first metal bases 101, the second metal bases 102.First metal base 101 comprises at least one metal base, and second metal base 102 comprises at least one metal base.Can stacked at least one epitaxial semiconductor film on each metal base of first metal base 101.The mutual electric insulation of each metal base of each metal base of first metal base 101 and second metal base 102.Thereby first metal base 101 and second metal base 102 are fixed on preposition by insulating support 100 and form the encapsulation shell.
Fig. 1 a shows a specific embodiment of encapsulation shell.The encapsulation shell comprises insulating support 100, first metal base 101 and second metal base 102.Wherein, first metal base 101 and second metal base 102 include only a metal base respectively.
Fig. 1 b shows a specific embodiment of encapsulation shell.The encapsulation shell comprises insulating support 100, first metal base 101 and second metal base 102.Wherein, first metal base 101 and second metal base 102 comprise two discrete metal bases respectively.
Fig. 1 c shows a specific embodiment of encapsulation shell.The encapsulation shell comprises insulating support 100, first metal base 101 and second metal base 102.Wherein, first metal base 101 comprises a metal base, and second metal base 102 comprises three discrete metal bases.
Fig. 1 d shows a specific embodiment of encapsulation shell.The encapsulation shell comprises insulating support 100, first metal base 101 and second metal base 102.Wherein, first metal base 101 comprises a metal base, and second metal base 102 comprises four discrete metal bases.
Fig. 1 e shows a specific embodiment of encapsulation shell.The encapsulation shell comprises insulating support 100, first metal base 101 and second metal base 102.Wherein, first metal base 101 comprises a metal base, and second metal base 102 comprises a metal base, and this metal base becomes the U font, surrounds from 3 first metal base 101.
Fig. 1 f shows a specific embodiment of encapsulation shell.The encapsulation shell comprises insulating support 100, first metal base 101 and second metal base 102.Wherein, first metal base 101 comprises a metal base, and second metal base 102 comprises a metal base, and this metal base becomes square shape, in the middle of first metal base 101 is trapped among.
Fig. 2 shows the specific embodiment and the manufacturing process thereof of the SMD encapsulation of epitaxial semiconductor film.
Fig. 2 a shows a specific embodiment of the technology of making the SMD encapsulation of epitaxial semiconductor film.The encapsulation shell adopts the structure of Fig. 1 d.Epitaxial semiconductor film 203 is grown on the growth substrates 204.Epitaxial semiconductor film 203 comprises: first kind limiting layer, active layer, the second class limitations layer.Epitaxial semiconductor film 203 is bonded on first metal base 201.Insulating support 200, first metal base 201, second metal base 202 constitute the encapsulation shell.First metal base 201 and second metal base, 202 mutual electric insulations, first metal base 201 and second metal base 202 comprise first first type surface and second first type surface separately.First first type surface and second first type surface are in the position relative to each other.Thereby insulating support 200 is fixed on preposition to first and second metal bases and forms the encapsulation shell.First first type surface of insulating support has identical direction with first first type surface and second first type surface of first metal base and second metal base respectively with second first type surface.The encapsulation shell comprises first first type surface and second first type surface, and first first type surface and second first type surface of encapsulation shell are made of first first type surface and second first type surface, first first type surface of second metal base and first first type surface and second first type surface of second first type surface and insulating support of first metal base respectively.
Fig. 2 b: peel off growth substrates 204.
The embodiment of an optimization is: after peeling off growth substrates 204, continue to adopt dry method or wet etching N class limitations layer, expose up to N+/N++ class limitations layer.Wherein, the N+/N++ class limitations is stacked between active layer and the N class limitations layer layer by layer.The embodiment of an optimization is: form alligatoring structure or photonic crystal 205 on the surface of the exposure of epitaxial semiconductor film 203.In order to simplify picture, in the figure of back, no longer draw alligatoring structure or photonic crystal 205.For the epitaxial semiconductor film of different materials, the method difference of peeling off.
Fig. 2 c: on epitaxial semiconductor film 203 and encapsulation shell, cover passivation layer 206.
Fig. 2 d: etch passivation layer 206 forms window 208 and window 207 respectively on the precalculated position above the epitaxial semiconductor film 203 and second metal base 202, makes the surface in the precalculated position of the epitaxial semiconductor film 203 and second metal base 202 expose.
Fig. 2 e: the top view of exploded view 2d.The edge of first metal base 201, second metal base 202, epitaxial semiconductor film 203 is passivated layer 206 and covers, and therefore dots.Preposition above 4 metal bases of the epitaxial semiconductor film 203 and second metal base 202, passivation layer 206 window that is opened makes the part surface of 4 metal bases of the part surface of epitaxial semiconductor film 203 and second metal base 202 expose.
Fig. 2 f: covering transparent electrode on the encapsulation shell.Transparency electrode is an integral body, comprises, (1) is called transparency electrode 209 below by passivation layer 206 window of opening 208 and the part 209 that epitaxial semiconductor film 203 electrically contacts above epitaxial semiconductor film 203.(2) part 210 that electrically contacts of 4 metal bases of the window of opening above second metal base 202 by passivation layer 206 207 and second metal base 202 is called transparency electrode 210 below.(3) cover part 221 above the passivation layer, this part is electrically connected transparency electrode 209 and transparency electrode 210, is called transparency electrode 221 below.Transparency electrode 209,210,221 is electrically connected mutually.
Fig. 2 g: the top view of Fig. 2 f of covering transparent electrode on the encapsulation shell: the transparency electrode 209 that window of opening above epitaxial semiconductor film 203 by passivation layer and epitaxial semiconductor film 203 electrically contact, the transparency electrode 210 that the window of opening above second metal base 202 by passivation layer and 4 metal bases of second metal base 202 electrically contact covers the transparency electrode 221 above the passivation layer.
Fig. 2 h: a surface bond of epitaxial semiconductor film 203 on first first type surface of first metal base 201, thereby be electrically connected with second first type surface 214 (i.e. first electrode) of first metal base 201.Another surface of epitaxial semiconductor film 203 is electrically connected with transparency electrode 209, therefore, be electrically connected with second metal base 202 by transparency electrode 209,221,210, thereby be electrically connected with second first type surface 213 (i.e. second electrode) of second metal base 202.
The embodiment of an optimization is: form alligatoring structure 211 on the surface of transparency electrode 209,210,221.
The embodiment of an optimization is: the outward flange along the encapsulation shell, remove transparency electrode, and expose up to passivation layer, form step 212, so that reduce electric leakage.
Fig. 2 j: the embodiment of an optimization: before the surface of transparency electrode 209,210,221 is by alligatoring, the protective layer 215 of stacked insulation on the surface of transparency electrode 209,210,221.
Fig. 2 k: the embodiment of an optimization: in the embodiment of the optimization of Fig. 2 j, the surface of the protective layer 215 of insulation has alligatoring structure 216.
Top concrete description does not limit the scope of the invention, and only provides some specific illustrations of the present invention.Therefore covering scope of the present invention should be determined by claim and their legal equivalents, rather than by above-mentioned specific detailed description and embodiment decision.
Claims (6)
1. the SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film is characterized in that, the SMD encapsulation of described vertical structure semiconductor epitaxial film comprises:
-encapsulation shell; Wherein, described encapsulation shell comprises: first metal base, second metal base and insulating support; Described first metal base comprises at least one metal base; Described second metal base comprises at least one metal base; Described insulating support is fixed on preposition formation encapsulation shell to described first metal base and second metal base; Described first metal base and the mutual electric insulation of second metal base, described first metal base and second metal base will be respectively electrically connect with two electrodes of extraneous power supply;
-at least one epitaxial semiconductor film; Described epitaxial semiconductor film comprises: first kind limiting layer, the active layer and the second class limitations layer; Described active layer is layered between described first kind limiting layer and the described second class limitations layer; Described epitaxial semiconductor film is bonded on described first metal base;
-passivation layer; Described passivation layer is layered on described encapsulation shell and the described epitaxial semiconductor film; Described passivation layer above the described epitaxial semiconductor film and described second metal base above preposition on have window;
-transparency electrode; Wherein, described transparency electrode is by the window of described passivation layer above described epitaxial semiconductor film, be layered on the described epitaxial semiconductor film, by the window of described passivation layer above described second metal base, be layered on described second metal base, make the surface of described epitaxial semiconductor film electrically connect by described transparency electrode and described second metal base.
2.
AsThe SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film of claim 1 is characterized in that, the surface of described epitaxial semiconductor film is by alligatoring or form photon crystal structure.
3.
AsThe SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film of claim 1 is characterized in that described transparency electrode has the single or multiple lift structure.
4.
AsThe SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film of claim 1 is characterized in that the surface of described transparency electrode is by alligatoring.
5.
AsThe SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film of claim 1 is characterized in that the protective layer of the surperficial stacked insulation of described transparency electrode.
6.
AsThe SMD encapsulation of three-dimensional vertical structure epitaxial semiconductor film of claim 5 is characterized in that the surface of the protective layer of described insulation is by alligatoring.
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| CN 200920219188 CN201594549U (en) | 2009-10-12 | 2009-10-12 | Surface-mount encapsulation for three-dimensional vertical semiconductor epitaxial film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097562A (en) * | 2010-12-14 | 2011-06-15 | 金木子 | Alternating current surface mounted type vertical structure semiconductor light-emitting diode |
| CN103594569B (en) * | 2013-11-08 | 2016-02-17 | 溧阳市江大技术转移中心有限公司 | There is the manufacture method of the inverted light-emitting diode (LED) of alligatoring transparency electrode |
| CN109698264A (en) * | 2017-10-20 | 2019-04-30 | 展晶科技(深圳)有限公司 | Light emitting diode and its manufacturing method |
-
2009
- 2009-10-12 CN CN 200920219188 patent/CN201594549U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097562A (en) * | 2010-12-14 | 2011-06-15 | 金木子 | Alternating current surface mounted type vertical structure semiconductor light-emitting diode |
| CN103594569B (en) * | 2013-11-08 | 2016-02-17 | 溧阳市江大技术转移中心有限公司 | There is the manufacture method of the inverted light-emitting diode (LED) of alligatoring transparency electrode |
| CN109698264A (en) * | 2017-10-20 | 2019-04-30 | 展晶科技(深圳)有限公司 | Light emitting diode and its manufacturing method |
| CN109698264B (en) * | 2017-10-20 | 2020-08-18 | 展晶科技(深圳)有限公司 | Light emitting diode and method for manufacturing the same |
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