CN201681968U - 三晶片贴片式发光二极管封装结构 - Google Patents

三晶片贴片式发光二极管封装结构 Download PDF

Info

Publication number
CN201681968U
CN201681968U CN2010201674653U CN201020167465U CN201681968U CN 201681968 U CN201681968 U CN 201681968U CN 2010201674653 U CN2010201674653 U CN 2010201674653U CN 201020167465 U CN201020167465 U CN 201020167465U CN 201681968 U CN201681968 U CN 201681968U
Authority
CN
China
Prior art keywords
wafer
district
welded
region
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010201674653U
Other languages
English (en)
Inventor
柳欢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN SMALITE OPTOELECTRONICS CO Ltd
Original Assignee
SHENZHEN SMALITE OPTOELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHENZHEN SMALITE OPTOELECTRONICS CO Ltd filed Critical SHENZHEN SMALITE OPTOELECTRONICS CO Ltd
Priority to CN2010201674653U priority Critical patent/CN201681968U/zh
Application granted granted Critical
Publication of CN201681968U publication Critical patent/CN201681968U/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

本实用新型涉及一种三晶片贴片式发光二极管封装结构,包括支架、三颗LED晶片和金线,LED晶片借助固晶底胶固定在支架焊盘上,LED晶片上方覆盖有荧光粉与胶水混合层;支架焊盘被一绝缘隔离带分成第一区和第二区;第一区与支架电极的负极引脚电性连接,第二区与支架电极的正极引脚电性连接;三颗LED晶片一并固定在所述第一区内;各LED晶片正极所焊接的三根金线的另一端焊接在第二区内,各LED晶片负极所焊接的三根金线的另一端焊接在第一区内。同现有技术相比较,本实用新型具有测试方便、使作业效率高等优点。

Description

三晶片贴片式发光二极管封装结构
技术领域本实用新型涉及至少有一个电位跃变势垒或表面势垒的适用于光发射的半导体器件,特别是涉及发光二极管,尤其是贴片式发光二极管封装结构。
背景技术近几年随着手机、PDA以及LCD显示器的快速增长,加之贴片式发光二极管(简称SMD LED,Surface Mounted Devices Light Emitting Diode)具有体积小、散射角大、发光均匀性好、可靠性高、低功耗和响应速度快等优点,市场对贴片式发光二极管的需求也越来越大。根据市场的需求和应用场所的不同,贴片式发光二极管也有多种封装方式和结构。现有技术中,三晶片贴片式LED的封装结构如图1和2所示,包括支架10’、三颗LED晶片20’和金线30’,所述支架10’的焊盘区由十字形绝缘隔离带分隔成四个区,其中三个区与支架10’的正极引脚电性连接,三颗LED晶片20’是分别固定在所述三个区内,然后分别借助金线30’焊接至另一个负极焊盘区,所述LED晶片20’上方覆盖有荧光粉与胶水混合层50’。这种贴片式LED封装结构存在下述不足:由于三颗LED晶片各自的焊盘区是分开独立的,因此在作业的测试过程中,需要把图1中的四个电极引脚均接上测试电源,或者分三次分别将三个正极引脚中的一个与负极引脚接上测试电源,才能对三颗LED晶片进行有效的发光测试,测试工序相对繁琐,使作业效率低下,并且,对分光工序也带来很多不便。
实用新型内容本实用新型要解决的技术问题在于避免上述现有技术的不足之处而提出一种测试方便的三晶片贴片式发光二极管封装结构。
本实用新型解决所述技术问题可以通过采用以下技术方案来实现:
设计、制作一种三晶片贴片式发光二极管封装结构,包括支架、三颗LED晶片和金线,所述LED晶片借助固晶底胶固定在所述支架的支架焊盘上,所述LED晶片上方覆盖有荧光粉与胶水混合层;其特征在于:所述支架焊盘被一绝缘隔离带分成大小两个区,即第一区和第二区;所述第一区与支架电极的负极引脚电性连接,所述第二区与支架电极的正极引脚电性连接;所述三颗LED晶片一并固定在所述第一区内;各LED晶片正极所焊接的三根金线的另一端焊接在所述第二区内,各LED晶片负极所焊接的三根金线的另一端焊接在所述第一区内。
作为本实用新型的进一步改进,所述绝缘绝缘隔离带呈直角型。
作为本实用新型的再进一步改进,所述三颗LED晶片上下均匀排列成“1”字型。
同现有技术相比较,本实用新型三晶片贴片式发光二极管封装结构的技术效果在于:1支架的焊盘区分为两个区,三颗LED晶片一并固定在第一区内,使各LED晶片形成共用支架的正极引脚和负极引脚,因此,在测试时,只需将支架的一正极引脚和任一负极引脚接上测试电源时,即可使三颗LED晶片同时得到有效的测试,从而提高了作业效率;分光工序中,同样需要使三颗LED晶片同时发光,显然,本实用新型只需两个电极引脚接电源比现有技术中四个电极引脚接电源要方便得多。
附图说明
图1是现有技术三晶片贴片式LED封装结构的俯视结构示意图;
图2是现有技术三晶片贴片式LED封装结构的主视剖视结构示意图;
图3是本实用新型三晶片贴片式发光二极管封装结构的俯视结构示意图;
图4是本实用新型三晶片贴片式发光二极管封装结构的主视剖视结构示意图。
具体实施方式以下结合附图所示之优选实施例作进一步详述。
一种三晶片贴片式发光二极管封装结构,如图3和图4所示,包括支架10、三颗LED晶片20和金线30,所述LED晶片20借助固晶底胶40固定在所述支架10的支架焊盘11上,所述LED晶片20上方覆盖有荧光粉与胶水混合层50;所述支架焊盘11被一呈直角型的绝缘隔离带12分成大小两个区,即第一区111和第二区112;所述第一区111与支架电极的负极引脚13电性连接,所述负极引脚13有三个,所述第二区112与支架电极的正极引脚14电性连接,所述正极引脚14有一个,所述三颗LED晶片20上下均匀排列成“1”字型一并固定在所述第一区111内;各LED晶片20正极所焊接的三根金线30的另一端焊接在所述第二区112内,各LED晶片20负极所焊接的三根金线30的另一端焊接在所述第一区111内。
测试或者分光需要三颗LED晶片20同时发光时,只需将图3中所示的正极引脚14(即第2引脚),和三个负极引脚13(即第1、3、4引脚)中的任意一个引脚接上电源即可。
以上内容是结合具体的优选技术方案对本实用新型所作的进一步详细说明,不能认定本实用新型的具体实施只局限于这些说明。对于本实用新型所属技术领域的普通技术人员来说,在不脱离本实用新型构思的前提下,还可以做出若干简单推演或替换(诸如将支架的正极引脚设为三个、负极引脚设为一个,等等),都应当视为属于本实用新型的保护范围。

Claims (4)

1.一种三晶片贴片式发光二极管封装结构,包括支架(10)、三颗LED晶片(20)和金线(30),所述LED晶片(20)借助固晶底胶(40)固定在所述支架(10)的支架焊盘(11)上,所述LED晶片(20)上方覆盖有荧光粉与胶水混合层(50);其特征在于:所述支架焊盘(11)被一绝缘隔离带(12)分成大小两个区,即第一区(111)和第二区(112);所述第一区(111)与支架电极的负极引脚(13)电性连接,所述第二区(112)与支架电极的正极引脚(14)电性连接;所述三颗LED晶片(20)一并固定在所述第一区(111)内;各LED晶片(20)正极所焊接的三根金线(30)的另一端焊接在所述第二区(112)内,各LED晶片(20)负极所焊接的三根金线(30)的另一端焊接在所述第一区(111)内。
2.根据权利要求1所述的三晶片贴片式发光二极管封装结构,其特征在于:所述绝缘绝缘隔离带(12)呈直角型。
3.根据权利要求1或2所述的三晶片贴片式发光二极管封装结构,其特征在于:所述三颗LED晶片(20)上下均匀排列成“1”字型。
4.根据权利要求1所述的三晶片贴片式发光二极管封装结构,其特征在于:所述正极引脚(14)有一个,所述负极引脚(13)有三个。
CN2010201674653U 2010-04-16 2010-04-16 三晶片贴片式发光二极管封装结构 Expired - Fee Related CN201681968U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201674653U CN201681968U (zh) 2010-04-16 2010-04-16 三晶片贴片式发光二极管封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201674653U CN201681968U (zh) 2010-04-16 2010-04-16 三晶片贴片式发光二极管封装结构

Publications (1)

Publication Number Publication Date
CN201681968U true CN201681968U (zh) 2010-12-22

Family

ID=43347003

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010201674653U Expired - Fee Related CN201681968U (zh) 2010-04-16 2010-04-16 三晶片贴片式发光二极管封装结构

Country Status (1)

Country Link
CN (1) CN201681968U (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102117880A (zh) * 2011-01-24 2011-07-06 佛山市蓝箭电子有限公司 一种表面贴装式led封装体及其制造方法
CN102136471A (zh) * 2010-12-23 2011-07-27 常州欧密格光电科技有限公司 大型显示屏的led元件

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102136471A (zh) * 2010-12-23 2011-07-27 常州欧密格光电科技有限公司 大型显示屏的led元件
CN102117880A (zh) * 2011-01-24 2011-07-06 佛山市蓝箭电子有限公司 一种表面贴装式led封装体及其制造方法
CN102117880B (zh) * 2011-01-24 2013-06-05 佛山市蓝箭电子股份有限公司 一种表面贴装式led封装体及其制造方法

Similar Documents

Publication Publication Date Title
EP2378571A3 (en) Light emitting device, light emitting device package, and lighting system
CN102723423B (zh) 大功率白光led器件无金线双面出光的封装方法及封装结构
CN107086263A (zh) 显示装置及其四面发光led
CN201681968U (zh) 三晶片贴片式发光二极管封装结构
CN202940270U (zh) 一种双面发光的led芯片和led器件
CN201827759U (zh) 用于植物生长的多晶片串联结构封装的led灯
CN203721758U (zh) 高密封性的led支架
CN205508817U (zh) 一种小光学扩展量的led封装模组
CN105448902A (zh) 一种led发光器件及其制作方法
CN109727880A (zh) 发光二极管晶粒的检测方法
CN204497261U (zh) Led封装结构
CN103219329A (zh) 发光二极管装置及其制造方法
CN201576681U (zh) 一种侧面发光led封装结构
CN203481264U (zh) 一种白光led芯片
CN202585414U (zh) 发光二极管装置
CN202373628U (zh) 一种led封装结构
CN202695442U (zh) 高亮度的发光二极管封装装置
CN202209553U (zh) 一种红绿蓝白四色混光cob面光源模块
CN202384333U (zh) 贴片式大功率led灯珠
CN205177836U (zh) 一种高稳定高压陶瓷cob led
TWI582334B (zh) All week LED bulb lights
CN219778909U (zh) 一种螺旋形倒装cob基板
CN201629347U (zh) 贴片led
CN201681970U (zh) 一种贴片式发光二极管
CN207250509U (zh) 一种多芯背光led

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101222

Termination date: 20170416