CN201623115U - Normal chip packaging structure with exposed substrate and heat sink having locking hole and connected with external heat-dissipating cap - Google Patents
Normal chip packaging structure with exposed substrate and heat sink having locking hole and connected with external heat-dissipating cap Download PDFInfo
- Publication number
- CN201623115U CN201623115U CN 201020122721 CN201020122721U CN201623115U CN 201623115 U CN201623115 U CN 201623115U CN 201020122721 CN201020122721 CN 201020122721 CN 201020122721 U CN201020122721 U CN 201020122721U CN 201623115 U CN201623115 U CN 201623115U
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- Prior art keywords
- chip
- heat
- radiating
- metal substrate
- cap
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a normal chip packaging structure with an exposed substrate and a heat sink having a locking hole and connected with an external heat-dissipating cap. The normal chip packaging structure comprises a chip (3), a metal substrate (1), inner metal pins (4), metal wires (5) for signal interconnection between the chip and the inner metal pins, a conductive or non-conductive heat-transfer adhesive material I (2) between the chip and the metal substrate, and a plastic package (8), wherein the metal substrate (1) is exposed from the plastic package (8), the heat sink (7) with the locking hole (7.1) is disposed above the chip (3), a conductive or non-conductive heat-transfer adhesive material II (6) is embedded between the heat sink (7) and the chip (3), the heat-dissipating cap (11) is disposed above the heat sink (7) and fixedly connected with the heat sink (7) through the locking hole (7.1) with a screw (12), and the heat-dissipating cap (11) is sleeved on the plastic package (8). The normal chip packaging structure can provide powerful heat dissipation capacity so as to quickly conduct heat of the chip to the outside of the package, thereby avoiding quick aging of the chip, and even burn or burnout.
Description
(1) technical field
The utility model relates to the heat dissipation block externally connected radiating cap encapsulating structure of a kind of base island exposed chip formal dress lock hole.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and providing a kind of can provide heat dissipation capability the strong heat dissipation block externally connected radiating cap encapsulating structure of base island exposed chip formal dress lock hole.
The purpose of this utility model is achieved in that the heat dissipation block externally connected radiating cap encapsulating structure of a kind of base island exposed chip formal dress lock hole, include chip, the Metal Substrate island of being carried of chip below, pin in the metal, chip is to the wire of the signal interconnection of the interior pin of metal, conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I and plastic-sealed body, the base island exposed plastic packaging material of described metal, it is characterized in that above described chip, being provided with radiating block, this radiating block has lock hole, is equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; Be provided with radiating cap above described radiating block, described radiating cap is fixedlyed connected with radiating block by described lock hole with screw, and described radiating cap is sleeved on the plastic-sealed body.
The beneficial effects of the utility model are:
The utility model passes through addition radiating block above chip, and sets up radiating cap outside plastic-sealed body, serves as the function of the heat radiation of high heat, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the heat dissipation block externally connected radiating cap encapsulating structure of a utility model base island exposed chip formal dress lock hole schematic diagram.
Reference numeral among the figure:
(5) embodiment
Referring to Fig. 5, Fig. 5 is the heat dissipation block externally connected radiating cap encapsulating structure of a utility model base island exposed chip formal dress lock hole schematic diagram.As seen from Figure 5, the heat dissipation block externally connected radiating cap encapsulating structure of the utility model base island exposed chip formal dress lock hole, include chip 3, the Metal Substrate island 1 of being carried of chip below, pin 4 in the metal, chip is to the wire 5 of the signal interconnection of the interior pin of metal, conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I 2 and plastic-sealed body 8, plastic packaging material 8 is exposed on described Metal Substrate island 1, above described chip 3, be provided with radiating block 7, this radiating block 7 has lock hole 7.1, is equipped with conduction or nonconducting heat conduction bonding material II 6 between this radiating block 7 and the described chip 3; Be provided with radiating cap 11 above described radiating block 7, described radiating cap 11 usefulness screws 12 are fixedlyed connected with radiating block 7 by described lock hole 7.1, and described radiating cap 11 is sleeved on the plastic-sealed body 8.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described radiating cap 11 can be copper, aluminium, pottery or alloy etc.
Claims (3)
1. heat dissipation block externally connected radiating cap encapsulating structure of base island exposed chip formal dress lock hole, include chip (3), the Metal Substrate island (1) of being carried of chip below, pin (4) in the metal, chip is to the wire (5) of the signal interconnection of the interior pin of metal, conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8), plastic packaging material (8) is exposed on described Metal Substrate island (1), it is characterized in that being provided with radiating block (7) in described chip (3) top, this radiating block (7) has lock hole (7.1), is equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3); Be provided with radiating cap (11) in described radiating block (7) top, described radiating cap (11) is fixedlyed connected with radiating block (7) by described lock hole (7.1) with screw (12), and described radiating cap (11) is sleeved on the plastic-sealed body (8).
2. the heat dissipation block externally connected radiating cap encapsulating structure of a kind of base island exposed chip formal dress lock hole according to claim 1, the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
3. the heat dissipation block externally connected radiating cap encapsulating structure of a kind of base island exposed chip formal dress lock hole according to claim 1, the material that it is characterized in that described radiating cap (11) is copper, aluminium, pottery or alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020122721 CN201623115U (en) | 2010-01-29 | 2010-01-29 | Normal chip packaging structure with exposed substrate and heat sink having locking hole and connected with external heat-dissipating cap |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020122721 CN201623115U (en) | 2010-01-29 | 2010-01-29 | Normal chip packaging structure with exposed substrate and heat sink having locking hole and connected with external heat-dissipating cap |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201623115U true CN201623115U (en) | 2010-11-03 |
Family
ID=43026572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020122721 Expired - Fee Related CN201623115U (en) | 2010-01-29 | 2010-01-29 | Normal chip packaging structure with exposed substrate and heat sink having locking hole and connected with external heat-dissipating cap |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201623115U (en) |
-
2010
- 2010-01-29 CN CN 201020122721 patent/CN201623115U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101103 Termination date: 20140129 |