CN201605348U - Silicon seedholder used for growing single crystal silicon in zone melting method - Google Patents
Silicon seedholder used for growing single crystal silicon in zone melting method Download PDFInfo
- Publication number
- CN201605348U CN201605348U CN2009202778248U CN200920277824U CN201605348U CN 201605348 U CN201605348 U CN 201605348U CN 2009202778248 U CN2009202778248 U CN 2009202778248U CN 200920277824 U CN200920277824 U CN 200920277824U CN 201605348 U CN201605348 U CN 201605348U
- Authority
- CN
- China
- Prior art keywords
- seedholder
- seed crystal
- silicon
- cavity
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 6
- 238000004857 zone melting Methods 0.000 title claims abstract description 6
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 53
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000717 retained effect Effects 0.000 description 6
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009202778248U CN201605348U (en) | 2009-11-26 | 2009-11-26 | Silicon seedholder used for growing single crystal silicon in zone melting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009202778248U CN201605348U (en) | 2009-11-26 | 2009-11-26 | Silicon seedholder used for growing single crystal silicon in zone melting method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201605348U true CN201605348U (en) | 2010-10-13 |
Family
ID=42950055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009202778248U Expired - Lifetime CN201605348U (en) | 2009-11-26 | 2009-11-26 | Silicon seedholder used for growing single crystal silicon in zone melting method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201605348U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102275238A (en) * | 2011-09-05 | 2011-12-14 | 镇江大成新能源有限公司 | Fixture for connecting seed crystals |
-
2009
- 2009-11-26 CN CN2009202778248U patent/CN201605348U/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102275238A (en) * | 2011-09-05 | 2011-12-14 | 镇江大成新能源有限公司 | Fixture for connecting seed crystals |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: BEIJING GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120207 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120207 Address after: 100088, 2, Xinjie street, Beijing Co-patentee after: Guotai Semiconductor Materials Co., Ltd. Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals Co-patentee before: Guotai Semiconductor Materials Co., Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Patentee after: Guotai Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: Guotai Semiconductor Materials Co., Ltd. |
|
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. Patentee before: Guotai Semiconductor Materials Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150708 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150708 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150708 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. Patentee before: You Yan Semi Materials Co., Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20101013 |
|
CX01 | Expiry of patent term |