CN201561800U - Ambient light detector - Google Patents
Ambient light detector Download PDFInfo
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- CN201561800U CN201561800U CN2009202606468U CN200920260646U CN201561800U CN 201561800 U CN201561800 U CN 201561800U CN 2009202606468 U CN2009202606468 U CN 2009202606468U CN 200920260646 U CN200920260646 U CN 200920260646U CN 201561800 U CN201561800 U CN 201561800U
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Abstract
The utility model provides an ambient light detector, including a photosensitive element for converting the intensity signal of the visible light into a current signal; a temperature characteristic stabilizing circuit for biasing the photosensitive element on the micro-bias voltage; and a current amplifier for amplifying the photocurrent signal output by the photosensitive element, wherein the photosensitive element is connected to the temperature characteristic stabilizing circuit, and the temperature characteristic stabilizing circuit is connected to the current amplifier. The ambient light detector provided by the utility model adopts the temperature characteristic stabilizing circuit to bias the photosensitive element in a minor voltage, so that ambient light detector can work in a wide temperature range, and the ambient light detector can be used more widely.
Description
Technical field
The utility model belongs to the opto-electronic conversion field, relates to a kind of surround lighting detector.
Background technology
Present surround lighting detector roughly is divided into three types, linear analogue output type, non-linear simulation output type and digital output type.
The linear analogue output type is subdivided into current-output type and voltage output type again, current-output type surround lighting detector changes into current signal with the surround lighting light intensity signal, by an external resistance, current signal is changed into voltage signal, use to supply with late-class circuit.Voltage output type surround lighting detector changes into the voltage signal output that is directly proportional with it with the surround lighting light intensity signal, uses to supply with late-class circuit.By contrast, current-output type surround lighting detector can be provided with the size of output voltage by the size of selecting pull-up resistor, uses more flexible.The two all is the linear analogue output type, and it is fast to have response speed, characteristics such as sensitivity height.Can increase a low pass or Hi-pass filter at output terminal as required, make the signal of output desirable more.
Another kind of is the non-linear simulation output type, more commonly imports illuminance and detector output electric signal and is logarithm or evolution relation.This surround lighting detector has enlarged the dynamic range of illuminance, but sensitivity significantly decreases than lienar for.
The 3rd class is digital output type, is about to ambient light intensity and changes into digital signal output.This output can directly link to each other with controller, compares with the output simulating signal, has better noise immunity, is easier to the network work on general purpose I 2C bus, allows a plurality of optical sensors are placed on the same I2C bus.Shortcoming is that circuit scale is relatively large, the power consumption height.Only be applied in the system of a plurality of optical sensors, otherwise be worth little.
Present current-output type surround lighting detector operating temperature range is less, has influenced the popularity of using to a certain extent, needs the bigger current-output type surround lighting detector of a kind of operating temperature range.
The utility model content
The utility model provides a kind of temperature range bigger surround lighting detector for solving the less technical matters of surround lighting detector operating temperature range.
A kind of surround lighting detector comprises: the light activated element that the visible light light intensity signal is converted to current signal; Light activated element is biased in temperature characterisitic stabilizing circuit under little bias-voltage; Photo-signal to light activated element output is carried out the amplified current amplifier; Light activated element is connected with the temperature characterisitic stabilizing circuit, and the temperature characterisitic stabilizing circuit is connected with current amplifier.
Above-mentioned light activated element is first a silicon photoelectric diode to the visible light sensitivity, and the first silicon photoelectric diode is made up of silicon photoelectric diode and infrared filter.
Above-mentioned light activated element is by to all responsive second silicon photoelectric diode of visible light and infrared light with only infrared light activated the 3rd silicon photoelectric diode is formed.
Said temperature stability of characteristics circuit comprises operational amplifier and metal-oxide-semiconductor; Operational amplifier has positive input, reverse input end, output terminal, light activated element is connected between the positive input and reverse input end of operational amplifier, metal-oxide-semiconductor is connected between the output terminal and reverse input end of operational amplifier, and metal-oxide-semiconductor also is connected with the rear end current amplifier.
Above-mentioned current amplifier is the common-source common-gate current mirror amplifier.
The surround lighting detector that the utility model provides is biased in light activated element under the less voltage by the temperature characterisitic stabilizing circuit, and the surround lighting detector can be operated in the wider temperature range, and the surround lighting detector is used more extensive.
Description of drawings
Fig. 1 is the surround lighting detector theory diagram that the utility model provides;
Fig. 2 is the circuit diagram of the embodiment 1 that provides of the utility model;
Fig. 3 a is illuminance scope current mirror amplifier input current figure among Fig. 2 when 0lux is between 1000lux;
Fig. 3 b is illuminance scope current mirror amplifier output current figure among Fig. 2 when 0lux is between 1000lux;
Fig. 3 c is illuminance scope current mirror amplifier gain error curve map among Fig. 2 when 0lux is between 1000lux;
Fig. 4 a be illuminance when 100lux, temperature range is by current mirror amplifier output current figure among Fig. 2 in-40 ℃ to the 120 ℃ change procedures;
Fig. 4 b be illuminance when 100lux, temperature range is by current mirror amplifier input current figure among Fig. 2 in-40 ℃ to the 120 ℃ change procedures;
Fig. 5 is the spectral response curve figure of human eye and silicon;
Fig. 6 adds the second silicon photoelectric diode structural drawing of P injecting structure for the N trap;
Fig. 7 is the 3rd a silicon photoelectric diode structural drawing of N well structure;
Fig. 8 is the second silicon photoelectric diode structural drawing that has marked junction depth and depletion layer thickness;
Fig. 9 is the 3rd silicon photoelectric diode structural drawing that has marked junction depth;
Figure 10 is the spectral response curve figure of second silicon photoelectric diode and the 3rd silicon photoelectric diode;
Figure 11 is the transfer rate curve map of silicon dioxide (SiO2), silicon nitride (Si3N4);
Figure 12 is the transfer rate curve map of wavelength ARC layer (ARC:anti-reflect coating, anti-reflection layer) in 420nm arrives the 840nm scope;
Figure 13 is the circuit diagram of embodiment 2;
Figure 14 is the internal circuit diagram of IRCurrentAMP6 among Figure 13;
Figure 15 is the internal circuit diagram of GCurrentAMP6 among Figure 13.
Embodiment
Clearer for technical matters, technical scheme and beneficial effect that the utility model is solved, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
The utility model has proposed the surround lighting detector of a kind of low-power consumption, high reliability, strong noise inhibition ability, high power supply inhibition ability and big operating temperature range based on simple current mirror amplifier.This surround lighting detector can detect the brightness situation of surrounding environment light accurately, the environmental light brightness signal transition is become current signal, feed back to control system, thereby realize the switch of the brightness regulation or the keyboard light of equipment display screen effectively, can be widely used in the Energy Saving Control of mobile phone, PDA, notebook computer, Portable DVD player, MP3 player, field camera and digital camera.
The ultimate principle of this surround lighting detector is that the ambient light intensity signal is changed into current signal, and system comes control display screen brightness by the size of current signal.In dark situation, relative less current of this surround lighting detector output, control system recognizes the brightness that this electric current will reduce display screen accordingly, can not allow display screen operate under the high-brightness environment all the time, thereby played energy-conservation, the effect that prolongs the display screen life-span.
As shown in Figure 1, this surround lighting detector is made up of light activated element 11, temperature characterisitic stabilizing circuit 12 and current amplifier 13, and light activated element 11 is connected with temperature characterisitic stabilizing circuit 12, and temperature characterisitic stabilizing circuit 12 is connected with current amplifier 13.Light activated element 11 converts the visible light light intensity signal to current signal; Temperature characterisitic stabilizing circuit 12 is biased in light activated element under little bias-voltage, reduces the influence of temperature to current signal; 13 pairs of current signals of current amplifier amplify, and use to supply with late-class circuit.
As shown in Figure 2, circuit diagram for the utility model embodiment 1, comprise: to the first silicon photoelectric diode D1 of visible light sensitivity, the first silicon photoelectric diode D1 constitutes by all responsive silicon photoelectric diode of visible light and infrared light is sticked the infrared filtering film, the influence of filtering infrared light obtains the current signal that the visual intensity conversion of signals becomes; Operational amplifier OP1 and NMOS pipe N constitute the temperature characterisitic stabilizing circuit, the anode of the first silicon photoelectric diode D1 meets the positive input Vin+ of operational amplifier OP1, the negative electrode of the first silicon photoelectric diode D1 meets the reverse input end Vin-of operational amplifier OP1, the grid of NMOS pipe N is connected with the output terminal of operational amplifier OP1, source electrode is connected with the reverse input end Vin-of operational amplifier OP1, drain electrode is connected with current amplifier, operational amplifier OP1 is biased in the first silicon photoelectric diode D1 under little bias-voltage, reduces the influence of temperature to output current; The reverse input end Vin-of operational amplifier OP1 does not have electric current to flow into, and the electric current that then flows through NMOS pipe N equals photocurrent, and this electric current is as the input signal of current mirror amplifier; 8 metal-oxide-semiconductors of rear end constitute the two-stage current mirror amplifier, PMOS pipe P1, P2, P3, P4 constitute first order amplifier, NMOS pipe N1, N2, N3, N4 constitute second level amplifier, it is right that PMOS pipe P1, P2 constitute metal-oxide-semiconductor, enlargement factor is 10 times, it is right that PMOS pipe P3, P4 constitute metal-oxide-semiconductor, enlargement factor is 10 times, it is right that NMOS pipe N1, N2 constitute metal-oxide-semiconductor, enlargement factor is 100 times, it is right that NMOS pipe N3, N4 constitute metal-oxide-semiconductor, and enlargement factor is 100 times, and the enlargement factor of whole current mirror amplifier is 1000 times.This two-stage amplifier all adopts cascode structure, compares with the simple current mirror amplifier, and it has strengthened the accuracy of current gain, has improved the inhibition ability to power supply noise, has increased output resistance.
Ultimate principle according to current mirror, current mirror amplifier can carry out linear amplification to input current, enlargement factor is the breadth length ratio of the breadth length ratio of previous stage metal-oxide-semiconductor than last back one-level metal-oxide-semiconductor, suppose that previous stage metal-oxide-semiconductor breadth length ratio is k1, back one-level metal-oxide-semiconductor breadth length ratio is k2, total current amplification factor is k, k=k2/k1 then, and the enlargement factor of diode pair just adopts this principle design to form in the above-mentioned current mirror amplifier.Adopt cascode structure can better suppress power supply noise, improve the Power Supply Rejection Ratio PSRR (Power Supply Reiection Ratio) of circuit, effectively suppress the channel length modulation effect, the enlargement factor that makes current mirror is more near theoretical value.Compare with simple current mirror, common-source common-gate current mirror has improved (g to the inhibition ability of electric source disturbance
m+ g
Mb) r
oDoubly, the mismatch of electric current has reduced (g
m+ g
Mb) r
oDoubly, g wherein
mBe metal-oxide-semiconductor mutual conductance, g
MbBe the mutual conductance of metal-oxide-semiconductor substrate, r
oBe the metal-oxide-semiconductor equivalent resistance.
Operational amplifier OP1 and NMOS pipe N constitute a negative feedback loop, and feedback configuration is the voltage-to-current negative feedback, and they have constituted the temperature characterisitic stabilizing circuit jointly.If regard operational amplifier OP1 as an ideal operational amplificr, ultimate principle according to feedback, then the inverting input Vin-voltage of operational amplifier OP1 equals in-phase input end Vin+ voltage, at this moment the photocurrent temperature influence minimum of the first silicon photoelectric diode D1.But, operational amplifier in the reality is difficult to accomplish ideal situation, so need do some particular processing to the indoor design of operational amplifier, make the inverting input Vin-voltage of amplifier slightly greater than in-phase input end Vin+ voltage, then the first silicon photoelectric diode D1 is in small anti-state partially, so not only better controlled photodiode photoelectric effect but also effectively suppressed temperature to exporting the influence of photocurrent.
As follows to operational amplifier OP1 special processing: positive input Vin+ and the reverse input end Vin-at operational amplifier OP1 adds one-level input buffering level respectively, the size design of input pipe is less relatively, in conjunction with the size of regulating tail current, operational amplifier OP1 is in whole working range, under the situation of the NMOS pipe N normal conduction photocurrent in guaranteeing feedback control loop, the pressure reduction that guarantees input end makes the first silicon photoelectric diode D1 be in that small (bias value is less than 1mV, generally at hundreds of uV) anti-state partially, thereby improved the performance of circuit to a great extent, especially temperature stability.
Shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, be respectively illuminance scope current mirror amplifier input current figure, current mirror amplifier output current figure, current mirror amplifier gain error curve map among Fig. 2 when 0lux is between 1000lux; The current mirror amplifier gain error is (1.008-1.001)/1=7 ‰ in given illuminance scope as can be seen.
Shown in Fig. 4 a, during illuminance stuck-at-00lux, along with variation of temperature, current mirror amplifier output current gain error is (16.023u-16.015u)/16u=0.5 ‰, shown in Fig. 4 b, during illuminance stuck-at-00lux, along with variation of temperature, the current mirror amplifier input current is unaffected.This shows that the surround lighting detector shown in the embodiment 1 can both operate as normal in than large-temperature range.
As shown in Figure 5, though the sensitive wavelength scope of silicon has comprised the sensitive wavelength scope of human eye, silicon but has quite high sensitivity to ultraviolet ray and infrared ray.Make the spectral response curve of the spectral response curve of surround lighting detector near human eye, must filtering silicon response spectrum middle-ultraviolet lamp and ultrared influence.
The utility model is realized the removal of infrared light and ultraviolet light by two photodiodes of design, only obtains the photoresponse curve to the visible light sensitivity.As shown in Figure 6, it is the structural drawing of the second silicon photoelectric diode, have the N trap and add the P injecting structure, calculate the junction depth and the depletion layer thickness of the second silicon photoelectricity secondary light, be designed to one visible light and all responsive silicon photoelectric diode of infrared light according to the depth of penetration of light; As shown in Figure 7, be the structural drawing of the 3rd silicon photoelectric diode, have the N well structure, calculate the junction depth of silicon photoelectricity secondary light according to the depth of penetration of light, be designed to one only to infrared light activated silicon photoelectric diode.
As everyone knows, the optical wavelength range of human eye sensitivity is that 350nm is between the 700nm.Want the ultraviolet influence of filtering, the junction depth of silicon photoelectric diode will be defined in below the ultraviolet depth of penetration, the photocurrent carrier that is produced by ultraviolet ray will fall in surface recombination like this, and photocurrent is not produced contribution.
Calculate by formula (1): at depth of penetration is the place of 0.192um, and wavelength is that the light of 350nm has been absorbed 90%, so less than the ultraviolet ray of λ=350nm depth of penetration 0.192um place is absorbed will be much larger than 90%.Therefore we define 0.192um adds second silicon photoelectric diode of P injecting structure for the N trap junction depth H1.In like manner because the sensitiveest wavelength of human eye is 560nm, so our light that designs 560nm to be absorbed 90% o'clock depth of penetration be the junction depth H3 of the 3rd silicon photoelectric diode of N well structure.
Electronic charge * absorption coefficient of light * luminous flux *
Because what be that 4.6um begins to absorb at depth of penetration mainly is infrared ray, so we are defined as the bottom H2 that the N trap adds the second silicon photoelectric diode depletion layer of P injecting structure with the 4.6um place.
As shown in table 1, shown the depth of penetration of different wave length under different absorbing states:
Table 1
| Wavelength (nm) | Absorb 10% o'clock depth of penetration (um) | Absorb 90% o'clock depth of penetration (um) |
| 350 | 0.008 | 0.192 |
| 560 | 0.2 | 4.6 |
| 700 | 0.52 | 11.5 |
According to top calculating, so we have obtained the silicon photoelectric diode of following two kinds of structures: as Fig. 8 and shown in Figure 9, the junction depth H1 of second silicon photoelectric diode is 0.192um among Fig. 8, and depletion layer low side depth H 2 is 4.6um, and the junction depth H3 of the 3rd silicon photoelectric diode is 4.6um among Fig. 9.
Below we define the concentration of silicon photoelectric diode, it is that 4.6um, junction depth H1 are 0.192um that second silicon photoelectric diode that adds the P injecting structure for the N trap requires the depth H 2 of its N trap, and therefore the PN junction district thickness of second silicon photoelectric diode is about 4.4um (4.6-0.192=4.408um).By the principle of formula (2) and formula (3), the concentration that we calculate the P injection is that the concentration of 1019atoms/cm3, N trap is 5 * 1013atoms/cm3.For the 3rd silicon photoelectric diode of N well structure,,, thereby can obtain bigger photocurrent so we make its depletion layer thickness thick more as far as possible because this structure does not have strict restriction to depletion layer thickness.If the concentration of the P substrate of our usefulness is 1014atoms/cm3, the concentration of N trap can be 1020atoms/cm3, and this moment, the thickness of depletion layer was 3.291um.
In formula (2), (3): V
Bi: built-in electromotive force; Q: electron charge; T: thermodynamic temperature; K: Boltzmann constant; N
A: be subjected to main carrier concentration; N
D: alms giver's carrier concentration; n
i: intrinsic carrier concentration; W: depletion layer thickness; ε
s: specific inductive capacity N
B: light dope carrier concentration V: impressed voltage.
The spectral response curve of the silicon photoelectric diode of these two kinds of structures as shown in figure 10, wherein Shang Mian curve is the spectral response curve that the N trap adds second silicon photoelectric diode of P injecting structure, and following curve is the spectral response curve of the 3rd silicon photoelectric diode of N well structure.
The curve of spectrum among Figure 10 can also be added the silicon photoelectric diode of P injecting structure by an independent N trap to be realized.If the N trap is added the silicon photoelectric diode of P injecting structure P substrate ground connection, give noble potential of N trap, inject the spectral response curve that the electric current that flows out is human eye from P so.Wherein from the N trap draw electricity level measure can get Figure 10 above that curve, from the P substrate draw the measurement of electricity level can get Figure 10 below that curve.But the curve of spectrum degree of accuracy of this silicon photoelectric diode is not high, can not use in the occasion that degree of accuracy is had relatively high expectations.
Second silicon photoelectric diode of above-mentioned design is all responsive to visible light and infrared light, the 3rd silicon photoelectric diode is only to the infrared light sensitivity, the photocurrent that second silicon photoelectric diode is produced deducts the photocurrent that the 3rd silicon photoelectric diode produces, and just can access accurate visible light electric current.
In CMOS technology; semiconductor surface can deposit a lot of dielectric layers to reach the effect of protection and isolating chip; light by these dielectric layers reflect, refraction and interference can arrive remaining little of plane of crystal; the existence of these dielectric layers has had a strong impact on the transfer rate of silicon photoelectric diode.
For addressing this is that, the design of will windowing, the design of windowing be exactly will the N trap of overlayer above injecting of the P of second silicon photoelectric diode, the 3rd silicon photoelectric diode on overlayer etch away, light can directly be mapped to semiconductor surface like this, be exposed to airborne semiconductor, can be because the variation of essence takes place in the influence of external environment (as having dust in the air), as lattice damage.Therefore need cover one deck ARC layer at semiconductor surface, can protect and isolating chip, can make the big effect of silicon photoelectric diode transfer rate again to reach.
The ARC layer needs the effect of protection, isolation and printing opacity, and silicon nitride (Si3N4) and silicon dioxide (SiO2) can be as the materials of ARC layer.As shown in figure 11, the transmittance of silicon nitride (Si3N4) is than silicon dioxide (SiO2) height, so select the material of silicon nitride (Si3N4) as the ARC layer for use.
By the thickness of formula (4) calculating ARC layer, according to the environment at silicon nitride (Si3N4) place, the refractive index of establishing silicon nitride (Si3N4) is 2, and wavelength is selected the most responsive 560nm of human eye, considers the quality of technology, and the odd-multiple multiple is selected 3 times.The thickness that calculates the ARC layer is 2100 dusts.
With thickness is the silicon nitride (Si3N4) of 2100 dusts when doing the ARC layer, and in the transfer rate of visible region as shown in figure 12, visible minimum all more than 60% at the transmittance of visible region, translucidus is better.
In the above-mentioned design; the ultraviolet influence of junction depth filtering by silicon photoelectric diode; reduced the loss of light by the window etching by multilayered medium; reduced reflection of light by the ARC layer; increased the luminous flux that projects semiconductor surface; can also protect and isolating chip, avoid the infringement of external environment chip.
To remove the influence of infrared light by subtraction circuit below to photocurrent, Figure 13 is the circuit diagram of the utility model embodiment 2, D3 only is to infrared light activated the 3rd silicon photoelectric diode among the figure, D2 is to infrared light and the second responsive silicon photoelectric diode of visible light, the negative electrode of the 3rd silicon photoelectric diode D3 connects the V+ input end of IRCurrentAMP6, the anode of the 3rd silicon photoelectric diode D3 connects the V-input end of IRCurrentAMP6, the negative electrode of second silicon photoelectric diode connects the V-input end of GCurrentAMP6, the anode of second silicon photoelectric diode connects the V+ input end of GCurrentAMP6, and IRCurrentAMP6 output terminal IRIout connects the anode of the second silicon photoelectric diode D2.The same temperature characterisitic stabilizing circuit and common-source common-gate current mirror amplifier with embodiment 1 are all contained in IRCurrentAMP6 and GCurrentAMP6 inside, suppose that the photocurrent that the 3rd silicon photoelectric diode D3 produces is I
D3, the photocurrent that the second photoelectric diode D2 produces is I
D2, the enlargement factor of IRCurrentAMP6 is k, the enlargement factor of GCurrentAMP6 is a, then exports photocurrent and satisfies Iout=a (I
D2-kI
D3), the appropriate design coefficient k just can make the effective filtering infrared light of surround lighting detector part, and promptly output current Iout only is directly proportional with visible light illumination.
Coefficient k depends on the responsiveness of two photodiodes to infrared light, its objective is from I
D2In deduct the photocurrent part that infrared light produces.Coefficient k adopts following method to determine, is located under a certain photoenvironment, and D3 is I to the responsive photocurrent that produces of infrared light only
D3, D2 is responsive to visible light and infrared light, and the photocurrent of generation is I
D2, I
D2=I
1+ I
2, I
1The photocurrent that the expression visible light partly produces, I
2The photocurrent that the expression infrared light partly produces, then coefficient
The internal circuit diagram of IRCurrentAMP6 as shown in figure 14 among Figure 13, constitute the temperature characterisitic stabilizing circuit by operational amplifier OP2 and PMOS pipe P23, eight MOS in rear end constitute two-stage common-source common-gate current mirror amplifier, PMOS pipe P21, P22, P23, P24 constitute first order amplifier, and NMOS pipe N21, N22, N23, N24 constitute second level amplifier.It is right that PMOS pipe P21, P22 constitute metal-oxide-semiconductor, and enlargement factor is 1 times, and it is right that PMOS pipe P23, P24 constitute metal-oxide-semiconductor, and enlargement factor is 1 times, and it is right that NMOS pipe N21, N22 constitute metal-oxide-semiconductor, and enlargement factor is k, and it is right that NMOS pipe N23, N24 constitute metal-oxide-semiconductor, and enlargement factor is k.This cascade operational amplifier amplifies k doubly with the output current of the 3rd silicon photoelectric diode D3.The shared same PMOS pipe P23 of the PMOS pipe in the temperature characterisitic stabilizing circuit and the first order amplifier of cascade operational amplifier.Input port V+, V-among Figure 14, VCC, output port IRIout are corresponding with input port V+, V-, VCC, the output port IRIout of IRCurrentAMP6 among Figure 13.
The internal circuit diagram of GCurrentAMP6 as shown in figure 15 among Figure 13, constitute the temperature characterisitic stabilizing circuit by operational amplifier OP3 and NMOS pipe N31, eight MOS in rear end constitute two-stage common-source common-gate current mirror amplifier, NMOS pipe N31, N32, N33, N34 constitute first order amplifier, and PMOS pipe P31, P32, P33, P34 constitute second level amplifier.It is right that NMOS pipe N31, N32 constitute metal-oxide-semiconductor, enlargement factor is 10 times, it is right that NMOS pipe N33, N34 constitute metal-oxide-semiconductor, enlargement factor is 10 times, it is right that PMOS pipe P31, P32 constitute metal-oxide-semiconductor, and enlargement factor is 100 times, and it is right that PMOS pipe P33, P34 constitute metal-oxide-semiconductor, enlargement factor is 100 times, and this cascade operational amplifier amplifies 1000 times with the output current of the second silicon photoelectric diode D2.The shared same NMOS pipe N31 of the NMOS pipe in the temperature characterisitic stabilizing circuit and the first order amplifier of cascade operational amplifier.Input port V-, V+ among Figure 15, VSS, VCC, output port Iout are corresponding with input port V-, V+, VSS, VCC, the output port Iout of GCurrentAMP6 among Figure 13.
The surround lighting detector of embodiment 2 accurately subtracts each other by the photocurrent that two circuit produce, only obtain spectral response curve to the visible light sensitivity, this spectral response curve is near the response of human eye to spectrum, effect by temperature characterisitic stabilizing circuit among IRCurrentAMP6 and the GCurrentAMP6, improved operating temperature range, made surround lighting detector range of application more extensive.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection domain of the present utility model.
Claims (7)
1. a surround lighting detector is characterized in that, comprising:
The visible light light intensity signal is converted to the light activated element of current signal;
Light activated element is biased in temperature characterisitic stabilizing circuit under little bias-voltage;
Photo-signal to light activated element output is carried out the amplified current amplifier;
Light activated element is connected with the temperature characterisitic stabilizing circuit, and the temperature characterisitic stabilizing circuit is connected with current amplifier.
2. surround lighting detector as claimed in claim 1 is characterized in that: described light activated element is first a silicon photoelectric diode to the visible light sensitivity.
3. surround lighting detector as claimed in claim 2 is characterized in that: the described first silicon photoelectric diode is made up of silicon photoelectric diode and infrared filter.
4. surround lighting detector as claimed in claim 1 is characterized in that: described light activated element is by to all responsive second silicon photoelectric diode of visible light and infrared light with only infrared light activated the 3rd silicon photoelectric diode is formed.
5. surround lighting detector as claimed in claim 1 is characterized in that: described temperature characterisitic stabilizing circuit comprises: operational amplifier and metal-oxide-semiconductor;
Operational amplifier has positive input, reverse input end, output terminal, light activated element is connected between the positive input and reverse input end of operational amplifier, metal-oxide-semiconductor is connected between the output terminal and reverse input end of operational amplifier, and metal-oxide-semiconductor also is connected with the rear end current amplifier.
6. surround lighting detector as claimed in claim 1 is characterized in that: described current amplifier is a current mirror amplifier.
7. surround lighting detector as claimed in claim 6 is characterized in that: described current mirror amplifier is the common-source common-gate current mirror amplifier.
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| CN102739304A (en) * | 2011-04-06 | 2012-10-17 | 北京同方微电子有限公司 | Light detection circuit used for chip safety protection |
| CN106052857A (en) * | 2016-08-22 | 2016-10-26 | 成都三零嘉微电子有限公司 | Photoelectric detection circuit with temperature compensation function |
| CN106783852A (en) * | 2017-01-09 | 2017-05-31 | 华润半导体（深圳）有限公司 | A kind of CMOS integrated circuits for suppressing current mirror leakage current |
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| CN102739304A (en) * | 2011-04-06 | 2012-10-17 | 北京同方微电子有限公司 | Light detection circuit used for chip safety protection |
| CN106052857A (en) * | 2016-08-22 | 2016-10-26 | 成都三零嘉微电子有限公司 | Photoelectric detection circuit with temperature compensation function |
| CN106052857B (en) * | 2016-08-22 | 2017-12-01 | 成都三零嘉微电子有限公司 | A kind of photoelectric detective circuit with temperature compensation function |
| CN106783852A (en) * | 2017-01-09 | 2017-05-31 | 华润半导体（深圳）有限公司 | A kind of CMOS integrated circuits for suppressing current mirror leakage current |
| CN106783852B (en) * | 2017-01-09 | 2019-04-26 | 华润半导体（深圳）有限公司 | It is a kind of for inhibiting the CMOS integrated circuit of current mirror leakage current |
| CN110595530B (en) * | 2018-06-13 | 2022-02-01 | 益加义电子有限公司 | Electronic device, optical gas sensor and method for measuring photocurrent and temperature |
| CN110595530A (en) * | 2018-06-13 | 2019-12-20 | 益加义电子有限公司 | Electronic device, optical gas sensor and method for measuring photocurrent and temperature |
| US11262295B2 (en) | 2018-06-13 | 2022-03-01 | E+E Elektronik Ges.M.B.H. | Electronic arrangement, optical gas sensor including such an electronic arrangement, and method for combined photocurrent and temperature measurement using such an electronic arrangement |
| US12039902B2 (en) | 2018-08-29 | 2024-07-16 | Ams International Ag | Temperature sensor arrangement, light sensor arrangement, mobile computing device including the same and methods using the same |
| CN113056658A (en) * | 2018-08-29 | 2021-06-29 | ams国际有限公司 | Temperature sensor apparatus, light sensor apparatus, mobile computing device including the apparatus, and method of using the apparatus |
| CN111380611A (en) * | 2018-12-29 | 2020-07-07 | 比亚迪股份有限公司 | Photoelectric sensing detection method and circuit applied to protective cover |
| CN112398970A (en) * | 2019-07-31 | 2021-02-23 | 北京小米移动软件有限公司 | Optical sensor, mobile terminal and visible light intensity detection method |
| CN113504806B (en) * | 2021-09-06 | 2021-12-21 | 上海艾为微电子技术有限公司 | Current reference circuit, chip and electronic equipment |
| CN113504806A (en) * | 2021-09-06 | 2021-10-15 | 上海艾为微电子技术有限公司 | Current reference circuit, chip and electronic equipment |
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