CN201536356U - Power semi-conductor device drive circuit with programmable functions - Google Patents
Power semi-conductor device drive circuit with programmable functions Download PDFInfo
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- CN201536356U CN201536356U CN2009202611733U CN200920261173U CN201536356U CN 201536356 U CN201536356 U CN 201536356U CN 2009202611733 U CN2009202611733 U CN 2009202611733U CN 200920261173 U CN200920261173 U CN 200920261173U CN 201536356 U CN201536356 U CN 201536356U
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- 230000006870 function Effects 0.000 title claims abstract description 24
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- 238000013024 troubleshooting Methods 0.000 claims description 11
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- 238000000034 method Methods 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 5
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- 238000006243 chemical reaction Methods 0.000 claims description 3
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Abstract
The utility model discloses a power semi-conductor device drive circuit with programmable functions. The power semi-conductor device drive circuit comprises a drive module connected with a power semi-conductor device, a signal input and output module connected with external control signals and a power supply module, and is characterized by comprising a programmable device with a software parameter correction interface, the programmable device is respectively connected with the drive module, the signal input and output module and the power supply module, and the software parameter correction interface is used for downloading or correcting internal programs of the programmable device. Only relative programs in the programmable device need changing, then, various different types and specifications of power semi conductor devices can be intelligently, reliably, quickly, conveniently and highly-effectively driven, controlled, monitored and protected in real time without changing parameters of devices of a hardware circuit, and the power semi-conductor device drive circuit not only improves the reliability and control precision and lowers cost, but also has simple use, greatly shortens debugging and developing cycles of users, and further obviously reinforces the detection and protection functions of a drive circuit.
Description
Technical field
The utility model relates to drive circuit, particularly relates to a kind of power semiconductor drive circuit with programmable functions.
Background technology
Existing power semiconductor insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, breviary is IGBT) or metal oxide semiconductor field effect tube (Metal Oxide Semiconductor Field EffectTransistor, breviary is MOSFET) drive circuit, generally comprise integrated circuit, thick film circuit and drive circuit board.Wherein some just directly applies high voltage or the low-voltage basic function of grid to realize opening or turn-offing in the IGBT or the MOSFET of certain power grade after receiving external control signal, can not implement monitoring and protection to power semiconductor; Also some has defencive functions such as overcurrent, overvoltage, need set parameters such as its threshold value, time by the capacitance resistance ware that change connects different value, and adopts simple monitor mode such as voltage comparator, and precision and response time have much room for improvement; When carrying out logical process, need to adopt more separation logic device to constitute treatment circuit, increased the complexity of circuit, influence reliability, and increased the area of circuit board.If at different IGBT or MOSFET, need change hardware relevant parameter, the manufacturer needs to design different drive circuits for this reason, thereby increases design cost, and the user also need debug and corresponding hardware designs at different drive circuits for this reason, relatively wastes time and energy.In addition, modes such as optical fiber, photoelectricity coupling, electric wire are generally adopted in the communication of existing IGBT or MOSFET drive circuit and central control circuit, be merely able to by the simple signal of burst transmissions, the status monitoring function of drive circuit is confined to simple report and is in certain abnormality, can not accurately report the reason that is in abnormality.Above variety of problems has restricted power semiconductor extensive use in high reliability, high-intelligentization equipment.
Summary of the invention
Technical problem to be solved in the utility model is to remedy above-mentioned the deficiencies in the prior art, proposes a kind of power semiconductor drive circuit with programmable functions.
Technical problem of the present utility model is solved by the following technical solutions:
This power semiconductor drive circuit with programmable functions comprises the driver module that is connected with power semiconductor, the signal input/output module that is connected with external control signal, and power module.
This characteristics with power semiconductor drive circuit of programmable functions are:
The programming device that comprises band software parameter modification interface, described programming device respectively with described driver module, signal input/output module, and the power module connection, described software parameter is revised the interface and is used for downloading or revising the corresponding program of described programming device.
Technical problem of the present utility model adopts following further technical scheme to be solved:
Also comprise state monitoring module, the input of described state monitoring module is connected with the port of power semiconductor, output is connected with described programming device, be used to detect dissimilar multiple abnormalities, and pass through the switching sequence outupt coded signal that described programming device cooperates power semiconductor, by the corresponding report signal of described signal input/output module to the dissimilar multiple abnormality of the CPU transmission of outside.
The port of described power semiconductor is a kind of in the temperature output port of drain electrode, power semiconductor of collector electrode, the MOSFET of IGBT.
Described programming device comprises control and troubleshooting logic module, and the integrated or external procedure stores assembly in inside that is connected with the troubleshooting logic module with described control respectively, the monitoring logic module, drive logic module, input and output shaping and encoding and decoding assembly and voltage monitoring assembly, integrated or the external procedure stores assembly in described inside is revised the interface with described software parameter and is connected, described monitoring logic module is connected with described state monitoring module, described driving logic module is connected with described driver module, described input and output shaping is connected with described signal input/output module with the encoding and decoding assembly, and described voltage monitoring assembly is connected with described power module.Described control and troubleshooting logic module are operation, monitoring and the troubleshooting core components of whole drive circuit.
The chip of described programming device is field programmable gate array (the FieldProgrammable Gate Array in the universal programmable chips, breviary is FPGA), CPLD (ComplexProgrammable Logic Device, breviary is CPLD), digital signal processor (Digital Signal Processor, breviary is DSP), single-chip microcomputer, and a kind of in the special applications chip (Application SpecificIntegrated Circuit, breviary are ASIC) that designs voluntarily of user.
It is the parameter modification module that is connected with programming device that described software parameter is revised the interface, described programming device is computer, download a kind of in line and the programmable device, be used for changing the relevant parameter of programming device program, and needn't change the component parameter of hardware circuit.Described program is a kind of in VHDL language, Verilog HDL language and the C language.
Described signal input/output module is included as the secured electrical isolating device that connected external control signal source provides secured electrical to isolate and transmit the control command of being sent by the external control signal source, and described control command comprises that the power semiconductor conversion turns on and off the driving command of state, trouble shooting instruction and hesitation instruction.
Described control command is a kind of during the light signal instruction and the signal of telecommunication instruct.Preferably, described external control signal source is outside central control unit, receives the dissimilar multiple abnormality report signal of described signal input/output module output.
Described power module is the DC/DC module that comprises the secured electrical isolating device, is input as the DC power supply of free voltage, is output as programming device and the needed voltage of other parts, comprise+15V ,-15V ,+5V ,+3.3V ,+common voltage grades such as 1.2V.Described secured electrical isolating device is used to power semiconductor to provide secured electrical to isolate.
Described dissimilar multiple abnormality comprises that the power module output voltage is too high or too low, power semiconductor overcurrent, overvoltage, overheated.
Described supply voltage is too high or too low be power module output DC power supply voltage deviation standard value at least ± 5%, the too high meeting of supply voltage causes failure of chip; Supply voltage is crossed the low power semiconductor turn-on consumption that can cause to be increased, even can't operate as normal.
Described power semiconductor is a kind of in IGBT, MOSFET and the MOS control thyristor (MOS ControlledTransistor, breviary are MCT).
The beneficial effect that the utility model is compared with the prior art is: adopt programming device to be used for the power semiconductor drive controlling.Only need corresponding program in the change programming device; and needn't change the component parameter of hardware circuit, just can intelligence, reliable, rapidly, make things convenient for, drive efficiently and in real time, control, monitor, protect the power semiconductor of multiple different model, specification.Not only improve reliability, control precision, reduce cost, and easy to use, shorten user's debugging, the construction cycle significantly.Programming device cooperates the switching sequence outupt coded signal of power semiconductor to CPU; can transmit more information; make CPU can grasp the operating state of drive circuit and power semiconductor in real time; monitor dissimilar multiple abnormalities such as supply voltage, power device overvoltage, overcurrent in real time; when breaking down situation, can react in real time according to the generation reason of different faults; so that take corresponding counter-measure, significantly strengthened the detection and the defencive function of drive circuit.
Description of drawings
Fig. 1 is that the utility model drive circuit is formed block diagram;
Fig. 2 is the composition block diagram of programming device among Fig. 1;
Fig. 3 is the circuit diagram of the utility model embodiment.
Embodiment
Because the connection of drive circuit on IGBT, MOSFET, MCT almost be on all four, be embodiment with a kind of IGBT drive circuit shown in Fig. 1～3 below and contrast accompanying drawing the utility model is described in further details with programmable functions.
This IGBT drive circuit with programmable functions comprises the driver module 3 that is connected with IGBT, the signal input/output module 5 that is connected with external control signal, and power module 6.
The push-pull amplifier circuit that the driver module 3 that is connected with IGBT comprises analog-digital chip U4, operational amplifier U5, is made up of a pair of triode T1 and T2, and the resistance R5 that is connected with the IGBT grid.The output of the chip U1 of programming device is converted into analog signal by analog-digital chip U4, and analog-digital chip U4 adopts HI5660; Pass through the voltage V of operational amplifier U5 and setting then
T, resistance R 1 and R2 be enlarged into+15V is to the signal the between-15V, operational amplifier U5 adopts LM7171; Push-pull amplifier circuit by being made up of a pair of triode T1 and T2 at last is connected to the grid of IGBT through resistance R5, reaches that driving IGBT opens, the function of shutoff and soft shutoff.
The programming device 1 that comprises band software parameter modification interface 4, its chip U1 is a fpga chip, adopt the XC3S50AN of XilinxSpartan 3AN series, program is used VHDL language, and software parameter is revised interface 4 and is used for downloading or revising programming device 1 corresponding program.
Programming device 1 comprises procedure stores assembly 11, control and troubleshooting logic module 14, and monitors logic module 9, driving logic module 10, input and output shaping and encoding and decoding assembly 12 and voltage monitoring assembly 13.Control and troubleshooting logic module 14 are operation, monitoring and the troubleshooting assembly of whole drive circuit.
Also comprise state monitoring module 2, state monitoring module 2 comprises high-voltage diode D1 and voltage comparator U6, the negative electrode of high-voltage diode D1 is connected with the collector electrode of IGBT, the output of voltage comparator U6 is connected with programming device 1, the collector electrode of IGBT is connected to voltage comparator U6 by high-voltage diode D1, with by the preset threshold voltage ratio, voltage comparator U6 adopts LM211, comparative result is input among the chip U1 of programming device and handles, be used to detect dissimilar multiple abnormalities, and pass through the switching sequence outupt coded signal that programming device 1 cooperates IGBT, by the corresponding report signal of signal input/output module 5 to the dissimilar multiple abnormality of the CPU transmission of outside.If determine that overcurrent appears in IGBT, just trigger the corresponding protection measure.
Signal input/output module 5 comprises the fibre optic isolater of being made up of fiber optic receiver U2 and fiber optic emitter U3, be used to connected external control signal source to provide secured electrical to isolate, the control IGBT conversion that transmission is sent by central control unit turns on and off the light/electric driving command of state, to the dissimilar multiple abnormality report signal of central control unit output.Dissimilar multiple abnormalities comprises that supply voltage departs from standard value ± 10%, IGBT overcurrent, overvoltage.Fiber optic receiver U2 adopts HFBR2521, receives the control signal that central control unit transmits by optical fiber.Fiber optic emitter U3 adopts HFBR1521, sends fault-signal by optical fiber to central control unit.
Power module 6 is the DC/DC modules that comprise secured electrical isolating device 7, be input as the DC power supply of free voltage, be output as programming device 1 and the needed voltage of other parts, comprise+15V ,-15V ,+5V ,+3.3V ,+common voltage grades such as 1.2V, secured electrical isolating device 7 is an isolating transformer, is used to power semiconductor to provide secured electrical to isolate.
Above content be in conjunction with concrete preferred implementation to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, make some being equal under the prerequisite of the utility model design and substitute or obvious modification not breaking away from, and performance or purposes are identical, all should be considered as belonging to protection range of the present utility model.
Claims (9)
1. the power semiconductor drive circuit with programmable functions comprises the driver module that is connected with power semiconductor, and the signal input/output module that is connected with external control signal, and power module is characterized in that:
Comprise that the band software parameter revises the programming device at interface, described programming device respectively with described driver module, signal input/output module, and power module connects.
2. the power semiconductor drive circuit with programmable functions as claimed in claim 1 is characterized in that:
Also comprise state monitoring module, the input of described state monitoring module is connected with the power semiconductor port, and output is connected with described programming device.
3. the power semiconductor drive circuit with programmable functions as claimed in claim 2 is characterized in that:
The port of described power semiconductor is a kind of in the temperature output port of drain electrode, power semiconductor of collector electrode, the MOSFET of IGBT.
4. the power semiconductor drive circuit with programmable functions as claimed in claim 3 is characterized in that:
Described programming device comprises control and troubleshooting logic module, and the integrated or external procedure stores assembly in inside that is connected with the troubleshooting logic module with described control respectively, the monitoring logic module, drive logic module, input and output shaping and encoding and decoding assembly and voltage monitoring assembly, integrated or the external procedure stores assembly in described inside is revised the interface with described software parameter and is connected, described monitoring logic module is connected with described state monitoring module, described driving logic module is connected with described driver module, described input and output shaping is connected with described signal input/output module with the encoding and decoding assembly, and described voltage monitoring assembly is connected with described power module.
5. the power semiconductor drive circuit with programmable functions as claimed in claim 4 is characterized in that:
The chip of described programming device is universal programmable chips FPGA, CPLD, DSP, single-chip microcomputer, and a kind of among the special applications chip ASIC that designs voluntarily of user.
6. the power semiconductor drive circuit with programmable functions as claimed in claim 5 is characterized in that:
It is the parameter modification module that is connected with programming device that described software parameter is revised the interface, and described programming device is a kind of in computer, download line and the programmable device.
7. the power semiconductor drive circuit with programmable functions as claimed in claim 6 is characterized in that:
Described signal input/output module is included as the secured electrical isolating device that connected external control signal source provides secured electrical to isolate and transmit the control command of being sent by the external control signal source, and described control command comprises that the power semiconductor conversion turns on and off the driving command of state, trouble shooting instruction and hesitation instruction.
8. the power semiconductor drive circuit with programmable functions as claimed in claim 7 is characterized in that:
Described power module is the DC/DC module that comprises the secured electrical isolating device.
9. the power semiconductor drive circuit with programmable functions as claimed in claim 8 is characterized in that:
Described power semiconductor is a kind of among IGBT, MOSFET and the MCT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202611733U CN201536356U (en) | 2009-12-04 | 2009-12-04 | Power semi-conductor device drive circuit with programmable functions |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009202611733U CN201536356U (en) | 2009-12-04 | 2009-12-04 | Power semi-conductor device drive circuit with programmable functions |
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| CN201536356U true CN201536356U (en) | 2010-07-28 |
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| CN2009202611733U Expired - Lifetime CN201536356U (en) | 2009-12-04 | 2009-12-04 | Power semi-conductor device drive circuit with programmable functions |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136720A (en) * | 2011-04-26 | 2011-07-27 | 广东明阳龙源电力电子有限公司 | Method for detecting short circuit and open circuit faults of IGBT device and controller in online manner |
| CN102931643A (en) * | 2011-08-11 | 2013-02-13 | 施贻蒙 | Digital control-based IGBT (Insulated Gate Bipolar Transistor) drive protection circuit and protection method thereof |
| CN104022771A (en) * | 2013-03-01 | 2014-09-03 | 德律科技股份有限公司 | Testing device having back-drive protection function |
| CN104423283A (en) * | 2013-08-30 | 2015-03-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and system for configuring analog channel parameters of electric equipment |
| CN105094019A (en) * | 2015-08-31 | 2015-11-25 | 广州供电局有限公司 | High-voltage power electronic control device and control method thereof |
| CN107404216A (en) * | 2017-06-22 | 2017-11-28 | 江苏广义牵引技术研究所有限公司 | Universal high-power IGBT drive control device and control method |
-
2009
- 2009-12-04 CN CN2009202611733U patent/CN201536356U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136720A (en) * | 2011-04-26 | 2011-07-27 | 广东明阳龙源电力电子有限公司 | Method for detecting short circuit and open circuit faults of IGBT device and controller in online manner |
| CN102931643A (en) * | 2011-08-11 | 2013-02-13 | 施贻蒙 | Digital control-based IGBT (Insulated Gate Bipolar Transistor) drive protection circuit and protection method thereof |
| CN102931643B (en) * | 2011-08-11 | 2015-03-04 | 施贻蒙 | Digital control-based IGBT (Insulated Gate Bipolar Transistor) drive protection circuit and protection method thereof |
| CN104022771A (en) * | 2013-03-01 | 2014-09-03 | 德律科技股份有限公司 | Testing device having back-drive protection function |
| CN104423283A (en) * | 2013-08-30 | 2015-03-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and system for configuring analog channel parameters of electric equipment |
| CN105094019A (en) * | 2015-08-31 | 2015-11-25 | 广州供电局有限公司 | High-voltage power electronic control device and control method thereof |
| CN107404216A (en) * | 2017-06-22 | 2017-11-28 | 江苏广义牵引技术研究所有限公司 | Universal high-power IGBT drive control device and control method |
| CN107404216B (en) * | 2017-06-22 | 2019-10-01 | 江苏广义牵引技术研究所有限公司 | Universal high-power IGBT drive control device and control method |
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Denomination of utility model: Power semi-conductor device drive circuit with programmable functions Effective date of registration: 20140617 Granted publication date: 20100728 Pledgee: Shenzhen SME credit financing guarantee Group Co., Ltd. Pledgor: Shenzhen Bronze Technologies Ltd. Registration number: 2014990000475 |
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Address after: 518000 Guangdong city of Shenzhen province Nanshan District Song Ping Road No. 1 South Building 11 floor Liteon Patentee after: SHENZHEN BRONZE TECHNOLOGIES LTD. Address before: 518057 room 2105, Nanshan District overseas student Pioneer Building, Shenzhen, Guangdong Patentee before: Shenzhen Bronze Technologies Ltd. |
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Date of cancellation: 20160418 Granted publication date: 20100728 Pledgee: Shenzhen SME credit financing guarantee Group Co., Ltd. Pledgor: SHENZHEN BRONZE TECHNOLOGIES LTD. Registration number: 2014990000475 |
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Denomination of utility model: Power semi-conductor device drive circuit with programmable functions Effective date of registration: 20160826 Granted publication date: 20100728 Pledgee: Shenzhen SME financing Company limited by guarantee Pledgor: SHENZHEN BRONZE TECHNOLOGIES LTD. Registration number: 2016990000746 |
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Date of cancellation: 20180928 Granted publication date: 20100728 Pledgee: Shenzhen SME financing Company limited by guarantee Pledgor: SHENZHEN BRONZE TECHNOLOGIES LTD. Registration number: 2016990000746 |
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Effective date of registration: 20191015 Address after: 518000 Room 201, building B, shenfubao modern optical factory, No. 14, Jinxiu Middle Road, xiuxin community, Kengzi street, Pingshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen bronze sword Technology Co., Ltd. Address before: 518000 Guangdong city of Shenzhen province Nanshan District Song Ping Road No. 1 South Building 11 floor Liteon Patentee before: SHENZHEN BRONZE TECHNOLOGIES LTD. |
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