CN201528028U - Single-pole double-throw radio frequency switch device - Google Patents

Single-pole double-throw radio frequency switch device Download PDF

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Publication number
CN201528028U
CN201528028U CN2009202370313U CN200920237031U CN201528028U CN 201528028 U CN201528028 U CN 201528028U CN 2009202370313 U CN2009202370313 U CN 2009202370313U CN 200920237031 U CN200920237031 U CN 200920237031U CN 201528028 U CN201528028 U CN 201528028U
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impedance transformer
switching tube
direct
short circuit
radio
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王宏伟
蒋祥茂
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Comba Network Systems Co Ltd
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Comba Telecom Systems China Ltd
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Abstract

The utility model discloses a single-pole double-throw radio frequency switch device which comprises a first switch tube, a second switch tube, a first DC short circuit device, a second DC short circuit device, a first radio frequency short circuit device, a second radio frequency short circuit device, a first impedance converter and a second impedance converter, wherein a first end of the first switch tube is respectively connected with a first input/output end and the first DC short circuit device; a second end of the first switch tube is respectively connected with a third input/output end and a first end of the second impedance converter; a second end of the second impedance converter is connected with a second input/output end, and is respectively connected with the second radio frequency short circuit device and the second DC short circuit device by the second switch tube; and a first end of the first radio frequency short circuit device is connected with a control end, and a second end thereof is connected with the second end of the second impedance converter by the first impedance converter. The radio frequency switch device has lower cost, simpler structure, more flexible structure and higher isolation degree.

Description

A kind of single-pole double throw RF switch device
Technical field
The utility model relates to communication technical field, relates in particular to a kind of single-pole double throw RF switch device.
Background technology
In the present communications field, the application of time division duplex is more and more wide, all is to adopt the mode of time division duplex to realize the communication of up-downgoing as TD-SCDMA, Wimax, Wlan, Zigbee, TD-LTE etc.TDM (Time Division Multiplexing, time division multiplexing) be exactly the time that will offer whole channel transmission information to be divided into some time sheet (abbreviation time slot), and use to each information source these time slot allocation, every road signal is monopolized channel and is carried out transfer of data in the time slot of oneself.
In time-multiplexed wireless communication system, all need a kind of up-downgoing channel that can guarantee can be in the radio-frequency (RF) switch of the shared public I/O end of different time points, it is connected between up-downgoing channel and the public I/O end.This radio-frequency (RF) switch require can be quick, synchronous the mutual switching between up-downgoing channel and the public I/O end finished, and maintenance radiofrequency signal favorable linearity.Otherwise it will cause losing of uplink and downlink signals data, and perhaps the linearity of uplink and downlink signals is just poor, cause the error rate of communication to increase, and have a strong impact on communication quality and efficient, so the performance of radio-frequency (RF) switch, directly have influence on the performance of entire wireless communication system.
Single-pole double throw RF switch of the prior art mainly contains following two kinds:
First kind, this radio-frequency (RF) switch is a mmic chip, the up-downgoing channel is by the mutual switching between this mmic chip realization and the public I/O end, this radio-frequency (RF) switch simplicity of design generally is applicable to the application of small-power and smaller power radiofrequency signal, when radiofrequency signal power is big, this mmic chip that can satisfy this requirement just seems very expensive, and the isolation of this mmic chip is generally little, in the time-division power amplification system, causes the damage of up low noise amplifier easily.
Second kind, this radio-frequency (RF) switch is a circulator, circulator can guarantee the synchronism of radiofrequency signal, can not cause the carrier signal loss of data because of the time delay of switch or the delay of control signal, do not need to add control signal wire yet, but the isolation of circulator is little, is mostly to be applied in the high-power signal occasion, and the price of circulator is relatively expensive simultaneously.
Summary of the invention
The utility model provides a kind of single-pole double throw RF switch device, and its cost is low, and isolation is than higher.
The technical solution of the utility model is: a kind of single-pole double throw RF switch device comprises: first switching tube, second switch pipe, the first direct-current short circuit device, the second direct-current short circuit device, the first radio-frequency-short device, the second radio-frequency-short device, first impedance transformer, second impedance transformer;
First end of described first switching tube connects the first I/O end and the described first direct-current short circuit device respectively; Second end of described first switching tube connects first end of the 3rd I/O end and described second impedance transformer respectively; Second end of described second impedance transformer is connected with the second I/O end, and is connected with the described second direct-current short circuit device with the described second radio-frequency-short device respectively by described second switch pipe; First end of the described first radio-frequency-short device is connected with control end, and second end of the described first radio-frequency-short device is connected with second end of described second impedance transformer by first impedance transformer;
When described control end input high level signal, described first switching tube and the conducting of second switch pipe, electric current respectively by the described first direct-current short circuit device and the second direct-current short circuit device to ground; The described first I/O end is communicated with described the 3rd I/O end, forms radio frequency path; Described second impedance transformer and described first impedance transformer are high-impedance state respectively, and described second I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit;
When described control end input low level signal, described first switching tube and second switch pipe are closed, and described first impedance transformer is high-impedance state, and described second impedance transformer is low resistance state, described first I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit; The described second I/O end is communicated with described the 3rd I/O end, forms radio frequency path.
Single-pole double throw RF switch device of the present utility model, described device comprises first switching tube, second switch pipe, the first direct-current short circuit device, the second direct-current short circuit device, the first radio-frequency-short device, the second radio-frequency-short device, first impedance transformer and second impedance transformer, cost is lower, is 1/10th of mmic chip or circulator; By at control end input high-low level signal, can control the break-make of the first I/O end and the 3rd I/O end, and the break-make of the 3rd I/O end and the described second I/O end, relatively simple for structure, design more flexible; Other first impedance transformer and second impedance transformer isolation when being high-impedance state are bigger, have guaranteed the isolation of the utility model single-pole double throw RF switch device.
Description of drawings
Fig. 1 is the utility model single-pole double throw RF switch device structural principle block diagram in one embodiment;
Fig. 2 is the utility model single-pole double throw RF switch device structural principle block diagram in another embodiment;
Fig. 3 is the utility model single-pole double throw RF switch device structural principle block diagram in another embodiment;
Fig. 4 is the utility model single-pole double throw RF switch device structural principle block diagram in another embodiment.
Embodiment
Single-pole double throw RF switch device of the present utility model, described device comprise first switching tube, second switch pipe, the first direct-current short circuit device, the second direct-current short circuit device, the first radio-frequency-short device, the second radio-frequency-short device, first impedance transformer, second impedance transformer; Cost is lower, is 1/10th of mmic chip or circulator; By at control end input high-low level signal, can control the break-make of the first I/O end and the 3rd I/O end, and the break-make of the 3rd I/O end and the described second I/O end, relatively simple for structure, design more flexible; Other first impedance transformer and second impedance transformer isolation when being high-impedance state are bigger, have guaranteed the isolation of the utility model single-pole double throw RF switch device.
Below in conjunction with accompanying drawing specific embodiment of the utility model is done a detailed elaboration.
Single-pole double throw RF switch device of the present utility model is used to realize that the up-downgoing channel is to the mutual switching between the common port, as Fig. 1, comprising: first switching tube, second switch pipe, the first direct-current short circuit device, the second direct-current short circuit device, the first radio-frequency-short device, the second radio-frequency-short device, first impedance transformer, second impedance transformer;
First end of described first switching tube connects the first I/O end and the described first direct-current short circuit device respectively; Second end of described first switching tube connects first end of the 3rd I/O end and described second impedance transformer respectively; Second end of described second impedance transformer is connected with the second I/O end, and is connected with the described second direct-current short circuit device with the described second radio-frequency-short device respectively by described second switch pipe; First end of the described first radio-frequency-short device is connected with control end, and second end of the described first radio-frequency-short device is connected with second end of described second impedance transformer by first impedance transformer; Described first impedance transformer and second impedance transformer are for solving The impedance transformer of wavelength, wherein n gets odd number; Connection between all devices can connect by radio frequency signal transmission line such as microstrip line connection or radio-frequency transmission line or coaxial transmission lines.
The described first I/O end and the second I/O end, the 3rd I/O end are respectively applied for the I/O radiofrequency signal, the radiofrequency signal of this I/O can be the radiofrequency signal of different systems different frequency ranges such as WLAN, ZIGBEE, TD-SCDMA, Wimax, LTE, in this Fig. 1, the 3rd I/O end is the radiofrequency signal common port, and the first I/O end and the second I/O end are the up-downgoing channel; In a preferred embodiment, described first impedance transformer is first The wavelength impedance transformer, described second impedance transformer is second
Figure G2009202370313D00051
The wavelength impedance transformer, wherein n gets odd number; Described first switching tube is first diode, and the second switch pipe is second diode, and first end of described first switching tube is a negative electrode, and second end of described first switching tube is an anode; The negative electrode of described second diode is connected with the described second radio-frequency-short device, and the anode of described second diode is connected with second end of described second impedance transformer.
When described control end input high level signal, the first direct-current short circuit device and the second direct-current short circuit device are shorted to ground with high level signal, described first switching tube and all conductings of second switch pipe, the described first I/O end is communicated with described the 3rd I/O end, forms radio frequency path; Because this moment, the first radio-frequency-short device and the second radio-frequency-short device were shorted to the effect on ground with radiofrequency signal, load impedance is zero, then can be according to formula Z i = Z 0 + j Z c tga Z c + j Z 0 tga Z c Calculate described second impedance transformer and described first impedance transformer is high-impedance state, wherein Z respectively iBe the line impedance of impedance transformer, Z 0Be load impedance, Z cBe the characteristic impedance of impedance transformer, a is that (in this single-pole double throw RF switch, a is approaching for phase constant
Figure G2009202370313D00053
N is an odd number); Described second I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit; Described control end and the described first I/O end, the second I/O end and the 3rd I/O end also form the radio frequency open circuit respectively.
When described control end input low level signal, described first switching tube and second switch pipe are all closed, and described first impedance transformer is high-impedance state, and described second impedance transformer is low resistance state, described first I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit; The described second I/O end is communicated with described the 3rd I/O end, forms radio frequency path.
Wherein the high-low level signal in the control end input can be the square waveform signal.
Can reach the break-make of the 3rd I/O end and the described second I/O end by control the break-make of the first I/O end and the 3rd I/O end at control end input high-low level signal thus, relatively simple for structure, design more flexible.Other first impedance transformer and second impedance transformer isolation when being high-impedance state are bigger, have guaranteed the isolation of the utility model single-pole double throw RF switch device.
In a preferred embodiment, for the high level signal that prevents the control end input has influence on the first I/O end, the second I/O end and the 3rd I/O end, as Fig. 2, single-pole double throw RF switch of the present utility model also comprise be used for the filtering direct current signal first every straight unit, second every straight unit and the 3rd every straight unit;
Described first is connected between the tie point of first end of described first I/O end and described first switching tube and the described first direct-current short circuit device every straight unit; Described second is connected between the tie point of the described second I/O end and described first impedance transformer and described second switch pipe every straight unit, and the described the 3rd is connected between the tie point of described the 3rd I/O end and described first switching tube and described second impedance transformer every straight unit.
For the high level signal that prevents control end input excessive, burn out the device and equipment of back, as Fig. 3, in a preferred embodiment, the utility model also comprises the current limliting unit of the high level signal that is used to limit described control end input, is connected between first end of described control end and the described first radio-frequency-short device.
In addition in order to prevent that transmission line is struck by lightning, the broken ring of static; as Fig. 3; in a preferred embodiment; the utility model also comprises anti-lightening protector; be connected the described the 3rd between straight unit and described the 3rd I/O end, or be connected the described the 3rd between the tie point of straight unit and described first switching tube and described second impedance transformer.
In a preferred embodiment, as Fig. 4, the utility model also comprises first matching network and second matching network, and described first matching network is connected first end and described first of described first switching tube between the tie point of straight unit and the described first direct-current short circuit device; Described second matching network comprises three ends, and first end is connected with second end of described first switching tube, and second end is connected with first end of described second impedance transformer, and the 3rd end is connected every straight unit with the described the 3rd;
This first matching network and second matching network are used to mate the impedance of described first switching tube and the impedance of radio frequency signal transmission line.
In order to improve the isolation of the 3rd I/O end and the second I/O end, in a preferred embodiment, as Fig. 4, the utility model also comprises the 3rd switching tube, the 3rd impedance transformer, the 3rd direct-current short circuit device and the 3rd radio frequency short-circuiting device; Described the 3rd impedance transformer is connected between the tie point of the described second I/O end and described first impedance transformer and described second switch pipe, one end of described the 3rd switching tube is connected between described second I/O end and described the 3rd impedance transformer, and the other end is connected with described the 3rd radio frequency short-circuiting device with described the 3rd direct-current short circuit device respectively.Described the 3rd impedance transformer is approaching
Figure G2009202370313D00071
The impedance transformer of wavelength, wherein n gets odd number.
Need to prove, described the 3rd impedance transformer can also be connected described second between the tie point of straight unit and described first impedance transformer and described second switch pipe, one end of described the 3rd switching tube is connected described second between straight unit and described the 3rd impedance transformer, and the other end is connected with described the 3rd radio frequency short-circuiting device with described the 3rd direct-current short circuit device respectively.
In a preferred embodiment, described the 3rd switching tube is the 3rd diode, and described the 3rd impedance transformer is the 3rd
Figure G2009202370313D00072
The wavelength impedance transformer, wherein n gets odd number; The negative electrode of described the 3rd diode is connected with described the 3rd radio frequency short-circuiting device, and the anode of described the 3rd diode is connected with described the 3rd impedance transformer.
Below in conjunction with Fig. 4, the utility model single-pole double throw RF switch device is done a detailed elaboration in the implementation method of a concrete Application Example.
State (1): select the first I/O end and the 3rd I/O end conducting, when the second I/O end and the 3rd I/O end disconnect:
At high level direct current signal of control end input; On first switching tube and second switch pipe and the 3rd switching tube, produce dividing potential drop respectively, make three switching tube conductings; The high level direct current signal outputs to the first radio-frequency-short device after handling through the current limliting of current limliting unit; Under the effect of the first radio-frequency-short device, first impedance transformer is high-impedance state to radiofrequency signal, and the relative radio frequency path of control end is considered as open circuit; To the flow through direct current signal of first switching tube of the first direct-current short circuit device is shorted to ground, forms the loop between the control end and the first direct-current short circuit device, and the first I/O end is communicated with described the 3rd I/O end, forms radio frequency path; To the flow through direct current signal of second switch pipe of the second direct-current short circuit device is shorted to ground, forms the loop between the control end and the second direct-current short circuit device; To the flow through direct current signal of the 3rd switching tube of the 3rd direct-current short circuit device is shorted to ground, forms the loop between the control end and the second direct-current short circuit device; Under the effect of the second radio-frequency-short device and the 3rd radio frequency short-circuiting device, second impedance transformer and the 3rd impedance transformer are high-impedance state to radiofrequency signal, the second I/O end and the first I/O end, the 3rd I/O end disconnect respectively, form the radio frequency open circuit.
Above-mentioned described three switching tubes can be diodes, because the switching time delay of diode is smaller, can reduce the switching time delay of the utility model RF switch device; The current limliting unit is excessive in order to prevent the high level direct current signal; First matching network and second matching network that connect at the first switching tube two ends are used to realize the impedance matching of first switching tube and radio frequency signal transmission line; Between first matching network and the first I/O end, connect first every straight unit, and be connected between anti-lightening protector and described second matching network the 3rd be used for the filtering direct current signal every straight unit; Anti-lightening protector is the safety in order to ensure system; The radiofrequency signal of the first I/O end, the second I/O end and the input of the 3rd I/O end can be the radiofrequency signal of different systems different frequency ranges such as WLAN, ZIGBEE, TD-SCDMA, Wimax, LTE.
State when having realized that by above step the described selection first I/O end of the utility model and the 3rd I/O end conducting, the second I/O end and the 3rd I/O end disconnect.
State (2): select the second I/O end and the 3rd I/O end conducting, when the first I/O end and the 3rd I/O end disconnect:
At low level direct current signal of control end input; Because low level signal does not reach the conducting voltage of first switching tube and second switch pipe and the 3rd switching tube, makes three switching tubes close; Under the effect of the first radio-frequency-short device, first impedance transformer is high-impedance state to radiofrequency signal, and the relative radio frequency path of control end is considered as open circuit; Because first switching tube is closed, the first I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit; Because second switch pipe and the 3rd switching tube are closed, second impedance transformer and the 3rd impedance transformer are low resistance state, and the second I/O end is communicated with described the 3rd I/O end, form radio frequency path.
So just, realize the second I/O end and the 3rd I/O end conducting, the state that the first I/O end and the 3rd I/O end disconnect by at control end input low level direct current signal.
This shows,, realize the switching between above state (1) and the state (2), thereby realized a kind of single-pole double-throw switch (SPDT) device that the utility model is mentioned by the variation of switching controls end input high-low level.
In the state (1), the 3rd switching tube, the 3rd direct-current short circuit device, the 3rd radio frequency short-circuiting device, and second switch pipe, the second direct-current short circuit device, these two groups of devices of the second radio-frequency-short device can be considered as an isolated location respectively, increase and reduce these isolated locations can directly have influence on single-pole double-throw switch (SPDT) some key indexs.Increase the quantity of this unit, can enlarging state (1) in the first I/O end to the isolation of the second I/O end, but the insertion loss of the second I/O end to the, three I/O ends in simultaneously also can enlarging state (2).In concrete the application, need select suitable progression at different system requirements.When three switching tubes are three diodes, can improve important indicator---the switching time delay of this single-pole double throw RF switch, therefore in actual applications, can select suitable diode as required equally.
The utility model provides device and its implementation of a kind of more powerful single-pole double throw RF switch.Compare with existing radio-frequency (RF) switch chip, overcome defectives such as cost height, isolation are little, control complexity; The mode that replaces radio-frequency (RF) switch with existing circulator is compared, overcome cost an arm and a leg, volume is big, isolation is little, defectives such as inconvenience are installed.
Experiment showed, that single-pole double throw RF switch device of the present utility model can pass through more powerful radiofrequency signal under situation about dropping into cheaply, and the inhibit signal favorable linearity; Be much better than the isolation of radio-frequency (RF) switch chip MMIC and circulator; Circuit design and simple PCB layout because the length and the broadband of the microstrip line of impedance transformer can be provided with as required, then can satisfy the situation of different frequency and different insertion losses, different isolation needs more flexibly; Because the switching time delay of diode is smaller, the time delay of whole single-pole double throw RF switch device also can reach the 10nS order of magnitude; The frequency bandwidth characteristics of single-pole double throw RF switch device can have well been optimized in the use of radio-frequency-short device; Machine system can be effectively protected in the adding of anti-lightening protector.
Therefore, the utility model proposes a kind of more powerful single-pole double throw RF switch device, this single-pole double throw RF switch device need use in the communication equipment of signal switching at all, particularly requiring can have good prospects for application in all kinds of time division communication systems of more high-power, high linearity, low cost, high-isolation.
Above-described the utility model execution mode does not constitute the qualification to the utility model protection range.Any modification of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the claim protection range of the present utility model.

Claims (9)

1. single-pole double throw RF switch device, it is characterized in that, comprising: first switching tube, second switch pipe, the first direct-current short circuit device, the second direct-current short circuit device, the first radio-frequency-short device, the second radio-frequency-short device, first impedance transformer, second impedance transformer;
First end of described first switching tube connects the first I/O end and the described first direct-current short circuit device respectively; Second end of described first switching tube connects first end of the 3rd I/O end and described second impedance transformer respectively; Second end of described second impedance transformer is connected with the second I/O end, and is connected with the described second direct-current short circuit device with the described second radio-frequency-short device respectively by described second switch pipe; First end of the described first radio-frequency-short device is connected with control end, and second end of the described first radio-frequency-short device is connected with second end of described second impedance transformer by first impedance transformer;
When described control end input high level signal, described first switching tube and the conducting of second switch pipe, high level signal respectively by the described first direct-current short circuit device and the second direct-current short circuit device to ground; The described first I/O end is communicated with described the 3rd I/O end, forms radio frequency path; Described second impedance transformer and described first impedance transformer are high-impedance state respectively, and described second I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit;
When described control end input low level signal, described first switching tube and second switch pipe are closed, and described first impedance transformer is high-impedance state, and described second impedance transformer is low resistance state, described first I/O end and described the 3rd I/O end disconnect, and form the radio frequency open circuit; The described second I/O end is communicated with described the 3rd I/O end, forms radio frequency path.
2. single-pole double throw RF switch device according to claim 1 is characterized in that: also comprise be used for the filtering direct current signal first every straight unit, second every straight unit and the 3rd every straight unit;
Described first is connected between the tie point of first end of described first I/O end and described first switching tube and the described first direct-current short circuit device every straight unit; Described second is connected between the tie point of the described second I/O end and described first impedance transformer and described second switch pipe every straight unit, and the described the 3rd is connected between the tie point of described the 3rd I/O end and described first switching tube and described second impedance transformer every straight unit.
3. single-pole double throw RF switch device according to claim 1 and 2 is characterized in that, also comprises: be used to limit the current limliting unit of the high level signal of described control end input, be connected between first end of described control end and the described first radio-frequency-short device.
4. single-pole double throw RF switch device according to claim 2; it is characterized in that: also comprise anti-lightening protector; be connected the described the 3rd between straight unit and described the 3rd I/O end, or be connected the described the 3rd between the tie point of straight unit and described first switching tube and described second impedance transformer.
5. single-pole double throw RF switch device according to claim 2, it is characterized in that: also comprise first matching network and second matching network, described first matching network is connected first end and described first of described first switching tube between the tie point of straight unit and the described first direct-current short circuit device; Described second matching network comprises three ends, and first end is connected with second end of described first switching tube, and second end is connected with first end of described second impedance transformer, and the 3rd end is connected every straight unit with the described the 3rd;
This first matching network and second matching network are used to mate the impedance of described first switching tube and the impedance of radio frequency signal transmission line.
6. single-pole double throw RF switch device according to claim 1 is characterized in that: also comprise the 3rd switching tube, the 3rd impedance transformer, the 3rd direct-current short circuit device and the 3rd radio frequency short-circuiting device;
Described the 3rd impedance transformer is connected between the tie point of the described second I/O end and described first impedance transformer and described second switch pipe, one end of described the 3rd switching tube is connected between described second I/O end and described the 3rd impedance transformer, and the other end is connected with described the 3rd radio frequency short-circuiting device with described the 3rd direct-current short circuit device respectively.
7. single-pole double throw RF switch device according to claim 2 is characterized in that: also comprise the 3rd switching tube, the 3rd impedance transformer, the 3rd direct-current short circuit device and the 3rd radio frequency short-circuiting device;
Described the 3rd impedance transformer is connected described second between the tie point of straight unit and described first impedance transformer and described second switch pipe, one end of described the 3rd switching tube is connected described second between straight unit and described the 3rd impedance transformer, and the other end is connected with described the 3rd radio frequency short-circuiting device with described the 3rd direct-current short circuit device respectively.
8. according to claim 1 or 2 or 4 or 5 described single-pole double throw RF switch devices, it is characterized in that: described first switching tube is first diode, and described second switch pipe is second diode, and described first impedance transformer is first
Figure F2009202370313C00031
The wavelength impedance transformer, described second impedance transformer is second
Figure F2009202370313C00032
The wavelength impedance transformer, wherein n gets odd number;
First end of described first switching tube is a negative electrode, and second end of described first switching tube is an anode; The negative electrode of described second diode is connected with the described second radio-frequency-short device, and the anode of described second diode is connected with second end of described second impedance transformer.
9. according to claim 6 or 7 described single-pole double throw RF switch devices, it is characterized in that: described the 3rd switching tube is the 3rd diode, and described the 3rd impedance transformer is the 3rd
Figure F2009202370313C00033
The wavelength impedance transformer, wherein n gets odd number;
The negative electrode of described the 3rd diode is connected with described the 3rd radio frequency short-circuiting device, and the anode of described the 3rd diode is connected with described the 3rd impedance transformer.
CN2009202370313U 2009-10-12 2009-10-12 Single-pole double-throw radio frequency switch device Expired - Lifetime CN201528028U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102970066A (en) * 2012-09-17 2013-03-13 西安天和防务技术股份有限公司 Converter based on centralized transmission and decentralized transmission of microwave
CN101673861B (en) * 2009-10-12 2013-05-01 京信通信系统(中国)有限公司 single-pole double throw RF switch device and implementation method thereof
CN106533405A (en) * 2016-12-19 2017-03-22 天津光电通信技术有限公司 RFID (Radio Frequency Identification) large power control device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101673861B (en) * 2009-10-12 2013-05-01 京信通信系统(中国)有限公司 single-pole double throw RF switch device and implementation method thereof
CN102970066A (en) * 2012-09-17 2013-03-13 西安天和防务技术股份有限公司 Converter based on centralized transmission and decentralized transmission of microwave
CN102970066B (en) * 2012-09-17 2016-06-08 西安天和防务技术股份有限公司 A kind of based on the transmodulator of microwave concentration of transmissions with dispersion transmission
CN106533405A (en) * 2016-12-19 2017-03-22 天津光电通信技术有限公司 RFID (Radio Frequency Identification) large power control device
CN106533405B (en) * 2016-12-19 2023-08-01 天津光电通信技术有限公司 RFID high-power control device

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